GB353845A - Improvements relating to the manufacture of solid rectifiers for alternating electric currents - Google Patents
Improvements relating to the manufacture of solid rectifiers for alternating electric currentsInfo
- Publication number
- GB353845A GB353845A GB2235/30A GB223530A GB353845A GB 353845 A GB353845 A GB 353845A GB 2235/30 A GB2235/30 A GB 2235/30A GB 223530 A GB223530 A GB 223530A GB 353845 A GB353845 A GB 353845A
- Authority
- GB
- United Kingdom
- Prior art keywords
- copper
- contact
- minutes
- disc
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 5
- 229910052802 copper Inorganic materials 0.000 abstract 5
- 239000010949 copper Substances 0.000 abstract 5
- 229910000881 Cu alloy Inorganic materials 0.000 abstract 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 abstract 1
- 239000005751 Copper oxide Substances 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910000431 copper oxide Inorganic materials 0.000 abstract 1
- 235000019441 ethanol Nutrition 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
- H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
- H01L21/164—Oxidation and subsequent heat treatment of the foundation plate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thermal Sciences (AREA)
- Heat Treatment Of Articles (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
- Chemical Treatment Of Metals (AREA)
Abstract
In order to produce a rectifier of the copper oxide type which shall be capable of withstanding comparatively high voltages, for example from 10 to 20 volts per disc, a disc of copper or an alloy of copper with zinc or other metal is heated to a temperature just below its melting-point in an oxidizing atmosphere for a predetermined period. For copper, the temperature required is from 1000-1025 DEG C. and the heating may be continued for about 8 minutes. The unit is then cooled to room temperature for about 4 hours at a uniform rate. The oxide may then be removed from a portion of the surface in order to make contact with the copper. Another portion may be reduced to metallic copper by contact with a reducing liquid or gas, such as ethyl alcohol, to provide a contact for the other terminal, or alternatively a contact disc of soft metal such as lead or tin may be pressed into contact with the oxide surface. A rectifier having a lower resistance in the conductive direction may be made by heating a disc of copper or copper alloy to about 1005 DEG C. for about 8 minutes, transferring to an environment at a temperature of 490 DEG C. for about 2 1/2 minutes, and then optionally cooling in air for from two to three minutes. The units are then quenched in water at room temperature.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US338053A US1936792A (en) | 1929-02-06 | 1929-02-06 | Method of making copper oxide rectifiers for high voltage application |
Publications (1)
Publication Number | Publication Date |
---|---|
GB353845A true GB353845A (en) | 1931-07-30 |
Family
ID=23323213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2235/30A Expired GB353845A (en) | 1929-02-06 | 1930-01-22 | Improvements relating to the manufacture of solid rectifiers for alternating electric currents |
Country Status (3)
Country | Link |
---|---|
US (1) | US1936792A (en) |
DE (2) | DE563639C (en) |
GB (1) | GB353845A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB491785A (en) * | 1937-02-08 | 1938-09-08 | Albert Leslie Williams | Improvements relating to the manufacture of alternating electric current rectifiers |
US2459630A (en) * | 1945-10-29 | 1949-01-18 | Westinghouse Electric Corp | Rectifier |
US2793968A (en) * | 1954-05-28 | 1957-05-28 | Gen Electric | Method of making copper oxide rectifier cells |
BE509424A (en) * | 1951-02-23 | |||
TW200520292A (en) * | 2003-08-08 | 2005-06-16 | Rovcal Inc | High capacity alkaline cell |
AR047875A1 (en) | 2004-06-04 | 2006-03-01 | Rovcal Inc | ALKAL CELLS THAT PRESENT HIGH CAPACITY |
-
1929
- 1929-02-06 US US338053A patent/US1936792A/en not_active Expired - Lifetime
-
1930
- 1930-01-22 GB GB2235/30A patent/GB353845A/en not_active Expired
- 1930-02-07 DE DE1930563639D patent/DE563639C/en not_active Expired
- 1930-05-25 DE DE1930579414D patent/DE579414C/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US1936792A (en) | 1933-11-28 |
DE563639C (en) | 1932-11-09 |
DE579414C (en) | 1933-06-26 |
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