GB2587940B - Inline chamber metrology - Google Patents

Inline chamber metrology Download PDF

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Publication number
GB2587940B
GB2587940B GB2017339.9A GB202017339A GB2587940B GB 2587940 B GB2587940 B GB 2587940B GB 202017339 A GB202017339 A GB 202017339A GB 2587940 B GB2587940 B GB 2587940B
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GB
United Kingdom
Prior art keywords
inline chamber
chamber metrology
metrology
inline
chamber
Prior art date
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Active
Application number
GB2017339.9A
Other versions
GB2587940A8 (en
GB202017339D0 (en
GB2587940A (en
Inventor
Ghosh Avishek
Sonthalia Goradia Prerna
Jan Visser Robert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
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Publication of GB202017339D0 publication Critical patent/GB202017339D0/en
Publication of GB2587940A publication Critical patent/GB2587940A/en
Publication of GB2587940A8 publication Critical patent/GB2587940A8/en
Application granted granted Critical
Publication of GB2587940B publication Critical patent/GB2587940B/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8845—Multiple wavelengths of illumination or detection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Robotics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Automation & Control Theory (AREA)
  • Glass Compositions (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Length Measuring Devices By Optical Means (AREA)
GB2017339.9A 2018-04-02 2019-03-29 Inline chamber metrology Active GB2587940B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IN201841012373 2018-04-02
US201962811202P 2019-02-27 2019-02-27
PCT/US2019/024823 WO2019195100A1 (en) 2018-04-02 2019-03-29 Inline chamber metrology

Publications (4)

Publication Number Publication Date
GB202017339D0 GB202017339D0 (en) 2020-12-16
GB2587940A GB2587940A (en) 2021-04-14
GB2587940A8 GB2587940A8 (en) 2023-04-26
GB2587940B true GB2587940B (en) 2023-06-14

Family

ID=68100175

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2017339.9A Active GB2587940B (en) 2018-04-02 2019-03-29 Inline chamber metrology

Country Status (7)

Country Link
JP (2) JP7097458B2 (en)
KR (2) KR20220140045A (en)
CN (1) CN112041977A (en)
DE (1) DE112019001752T5 (en)
GB (1) GB2587940B (en)
TW (2) TWI775689B (en)
WO (1) WO2019195100A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115602565B (en) * 2022-11-03 2023-06-23 江苏中芯沃达半导体科技有限公司 Semiconductor in-situ high-resolution visual on-line monitoring device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294289A (en) * 1990-10-30 1994-03-15 International Business Machines Corporation Detection of interfaces with atomic resolution during material processing by optical second harmonic generation
US5698989A (en) * 1994-10-06 1997-12-16 Applied Materilas, Inc. Film sheet resistance measurement
US5922179A (en) * 1996-12-20 1999-07-13 Gatan, Inc. Apparatus for etching and coating sample specimens for microscopic analysis
JP2004087342A (en) * 2002-08-28 2004-03-18 Jeol Ltd Observation device using charged particle beam
KR20060035071A (en) * 2004-10-21 2006-04-26 삼성전자주식회사 Robot for transferring semiconductor substrate
US20090026068A1 (en) * 2000-04-27 2009-01-29 Akihisa Hongo Revolution member supporting apparatus and semiconductor substrate processing apparatus
US20160024645A1 (en) * 2014-07-28 2016-01-28 Gatan, Inc. Ion Beam Sample Preparation and Coating Apparatus and Methods
US20170271181A1 (en) * 2015-03-19 2017-09-21 Applied Materials, Inc. Method and apparatus for reducing radiation induced change in semiconductor structures

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US4652757A (en) * 1985-08-02 1987-03-24 At&T Technologies, Inc. Method and apparatus for optically determining defects in a semiconductor material
KR970053234A (en) * 1995-12-20 1997-07-31 양승택 How to detect doping characteristics of compound semiconductor in real time
JPH09306849A (en) * 1996-05-17 1997-11-28 Furukawa Electric Co Ltd:The Vapor-phase growing apparatus
JPH1019790A (en) * 1996-07-02 1998-01-23 Hitachi Ltd Equipment for inspecting board in vacuum
KR100206940B1 (en) * 1996-09-21 1999-07-01 구본준 Sampling gas leakage checking system of semiconductor wafer component test equipment
US20040035529A1 (en) * 1999-08-24 2004-02-26 Michael N. Grimbergen Monitoring a process and compensating for radiation source fluctuations
JP2004521323A (en) * 2001-03-27 2004-07-15 サラフスカイ，ジョシュア，エス． Method and apparatus for detecting probe-target interactions using surface selective nonlinear optical techniques
JP4955863B2 (en) * 2001-05-22 2012-06-20 財団法人神奈川科学技術アカデミー Sum frequency generation spectroscopic apparatus and method
AU2003220019A1 (en) * 2002-03-20 2003-10-08 Tokyo Electron Limited Process monitoring using infrared optical diagnostics
JP2007033743A (en) * 2005-07-26 2007-02-08 Seiko Epson Corp Substrate for electronic device, liquid crystal panel, and electronic apparatus
DE102006009460A1 (en) * 2006-03-01 2007-09-06 Infineon Technologies Ag Process device used in production of integrated circuits comprises process chamber, holder within chamber for holding substrate, radiation source, radiation detector and control and evaluation unit
JP2011514660A (en) * 2008-01-31 2011-05-06 アプライド マテリアルズ インコーポレイテッド Deposition control in closed-loop MOCVD
WO2013085687A1 (en) * 2011-12-07 2013-06-13 Applied Materials, Inc. Laser reflectometry for substrate processing
EP3132467A4 (en) * 2014-04-17 2017-11-01 Femtometrix, Inc. Wafer metrology technologies

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294289A (en) * 1990-10-30 1994-03-15 International Business Machines Corporation Detection of interfaces with atomic resolution during material processing by optical second harmonic generation
US5698989A (en) * 1994-10-06 1997-12-16 Applied Materilas, Inc. Film sheet resistance measurement
US5922179A (en) * 1996-12-20 1999-07-13 Gatan, Inc. Apparatus for etching and coating sample specimens for microscopic analysis
US20090026068A1 (en) * 2000-04-27 2009-01-29 Akihisa Hongo Revolution member supporting apparatus and semiconductor substrate processing apparatus
JP2004087342A (en) * 2002-08-28 2004-03-18 Jeol Ltd Observation device using charged particle beam
KR20060035071A (en) * 2004-10-21 2006-04-26 삼성전자주식회사 Robot for transferring semiconductor substrate
US20160024645A1 (en) * 2014-07-28 2016-01-28 Gatan, Inc. Ion Beam Sample Preparation and Coating Apparatus and Methods
US20170271181A1 (en) * 2015-03-19 2017-09-21 Applied Materials, Inc. Method and apparatus for reducing radiation induced change in semiconductor structures

Also Published As

Publication number Publication date
GB2587940A8 (en) 2023-04-26
KR102454199B1 (en) 2022-10-14
TW202212815A (en) 2022-04-01
JP2021519522A (en) 2021-08-10
WO2019195100A1 (en) 2019-10-10
CN112041977A (en) 2020-12-04
TW201945724A (en) 2019-12-01
TWI775689B (en) 2022-08-21
GB202017339D0 (en) 2020-12-16
GB2587940A (en) 2021-04-14
KR20200128192A (en) 2020-11-11
TWI751412B (en) 2022-01-01
DE112019001752T5 (en) 2020-12-24
JP7097458B2 (en) 2022-07-07
JP2022160395A (en) 2022-10-19
KR20220140045A (en) 2022-10-17

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