GB2507306A - An antenna-coupled bolometer device for sensing electromagnetic radiation - Google Patents
An antenna-coupled bolometer device for sensing electromagnetic radiation Download PDFInfo
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- GB2507306A GB2507306A GB201219199A GB201219199A GB2507306A GB 2507306 A GB2507306 A GB 2507306A GB 201219199 A GB201219199 A GB 201219199A GB 201219199 A GB201219199 A GB 201219199A GB 2507306 A GB2507306 A GB 2507306A
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- 230000004044 response Effects 0.000 claims abstract description 4
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- 238000001514 detection method Methods 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0837—Microantennas, e.g. bow-tie
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
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- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
A bolometer device 1, for use in a bolometer array, for measuring a radiation-induced temperature change. The bolometer device 1 comprises: a bolometer sensor comprising: at least two antenna elements 4 coupled with one of their ends at a center position; a temperature sensing element 3 attached at the center position for detecting a temperature at the center position and for providing an electrical measure in response to the detected temperature; and one or more holding elements 5, each for mechanically supporting the bolometer sensor at an end portion of a respective one of the antenna elements 4. At least one of the holding elements 5 is electrically conductive, so that the electrical measure can be read out via the holding element 5. The antenna elements may be formed spirally or linearly extending outwardly from the center position. The bolometer sensor may be centrally arranged in a support frame 2, and each of the holding elements 5 may couple the bolometer sensor with one side of the support frame 2.
Description
Description
Bolometer device for sensing electromagnetic radiation
Technical field
The present invention relates to sensing devices, in particular to bolometer devices for measuring a radiation-induced temperature change.
Related art The detection of electromagnetic radiation in a range of 0.5 to 1.5 THz has well-established benefits, in particular in the field of low-cost passive imaging. Passive imaging relies on black body radiation of objects. an object at 300K emits very little signal in the THz range nevertheless passive remote sensing is possible. With THz imaging high-resolution imaging of hidden objects covered beneath clothing or other materials is feasible. The wide range of applications covers concealed weapon detection, surveillance cameras, astronomy, non-destructive material testing, as well as many biological and medical applications.
Typically, bolometers are used for detecting radiation in the above frequency range. since electronic devices are not capable of handling such high-frequency radiation. Furthermore.
bolometers can easily be implemented in a modified CMOS, or simpler in an 501-CMOS process with MEMS post-processing. For imaging purposes, a plurality of bolometers can be used in arrays, wherein a readout circuitry is also implemented using the same CMOS process.
Classic antenna coupled bolometer devices include an antenna for receiving electromagnetic radiation and a temperature sensing device, such as a temperature-dependent resistor, or any kind of electronic device, such as an FET (field effect transistor), which has a strongly temperature-dependent culTent which can be sensed.
One challenge in designing a bolometer is to support the temperature sensing device such that it is thermally insulated, i. e. with a very high thermal resistance to neighboring structures.
Common values for thermal resistances between the temperature sensing device and surrounding structures required for passive THz imaging bolometer applications are within a range of 108 K/W.
Document WO 2011/151756 A2 discloses a method and a sensing device having a thermal antenna that includes a resistive material and is configured to receive electromagnetic radiation for conversion into heat. The sensing device includes a supporting element. A thermal sensor is arranged to generate detection signals in response to a temperature of a sensing area. The thermal antenna and the thermal sensor are supported by a holding element.
The sensor element is electrically connected by conductive traces arranged at the holding element.
Document US 2011/0315880 Al discloses a device having at least one thermally insulated metal oxide semiconductor transistor used as a temperature sensor, an absorption structure for the absorption of dectromagnetic radiation, electrical and thermal conductors connecting the transistor, wherein the absorption structure absorbs electromagnetic radiation and heats the transistor that transduces temperature changes into an electrical signal.
Document US 2003/0222217 Al discloses a inicrobolometer structure, wherein a suspended antenna is supported by a substrate. A thermally sensitive element is connected to the antenna and arranged to dissipate electric currents into the antenna. Both the antenna and the thermally sensitive element comprise material that is susceptible to achieving a superconductive state below a certain critical temperature. The thermally sensitive element is supported at a distance from the substrate, leaving a gap between the thermally sensitive element and the surface of the substrate or other surrounding structures.
Summary of the present invention
According to an embodiment of a first aspect, a bolometer device for use in a bolometer array is provided, comprising: -a bolometer sensor comprising: * at least two antenna elements, coupled with one of their ends at a center position; * a temperature sensing element attached at the center position for detecting a temperature at the center position and for providing an electrical measure in response to the detected temperature; and -one or more holding elements, each for mechanically supporting the bolometer sensor at an end portion of a respective one of the antenna elements, wherein at least one of the holding elements is electrically conductive, so that the electncal measure can be read out via the h&ding element.
One idea of the above bolometer device is to use one or more holding elements for holding the temperature sensing element and an antenna element connected thereto. The temperature sensing element and the antenna element are held by connecting an outer portion of the antenna element to a support element by the holding element. The holding element may be configured to provide a thermal insulation, an electrical connection to the temperature sensing element for readout and a mechanical support for both the antenna element and the temperature sensing element to keep them in place. Hence, an improved design for a bolometer device can be provided which facilitates readout of the sensing signals. has an improved support of the temperature sensing element and the antenna element, and has an improved thermal insulation with respect to the temperature sensing element.
Moreover, the bolometer sensor may be supported merely by the one or more holding elements, so that it is kept distanced from surrounding structures.
The holding element may have a length which provides a thermal resistivity of typically l0 KIW.
According to an embodiment, the antenna elements may be formed spirally extending outwardly from the center position.
Alternatively, it may be provided that the antenna elements are formed as linearly extending outwardly from the center position.
As a further alternative, the antenna elements may form a cloverleaf anteima, wherein the antenna elements are formed as afflenna windings which extend outwardly from the center position.
The holding elements maybe integrally formed of an electrically conductive first materia', in particular of polysilicon or active silicon, wherein the antenna elements may further include a layer of a second matenal with a better conductivity as the first material. The antenna elements may also be fully made of the second material, such as metal, so that they have a substantial higher electncal conductivity than the holding elements.
It may be provided that termination elements with a higher impedance than the antenna elements and the holding elements are alTanged between the holding dements and their respective antenna elements at positions to define effective lengths of the antenna elements.
The temperature sensing element may have a circuit comprising: -a termination resistor for each of the antenna elements via which the antenna elements are coupled to a common node; -a capacitor for blocking a DC voltage or current caused by reading out the electrical measure; and -a temperature sensor, in partic&ar a field effect transistor, coupled to the common node.
In particular. the temperature sensing element may have blocking resistors for coupling the temperature sensor to respective antenna elements, so that the current induced by the reception of electromagnetic radiation is substantiafly blocked from the temperature sensor.
The bolometer sensor may be provided with four afflenna elements extending crosswise from the center position.
A plurality of bolorneter sensors may be provided, wherein at least one antenna elements of each of the bolometer sensors overlaps another antenna element of another one of the bolometer sensors, so that absorbing areas of the bolometer sensors overlap.
Furthermore, the antenna elements of the bolometer sensors may have different effective lengths to provide sensitivities in different frequency ranges.
it may be provided that the one or more holding elements for each the plurality of the bolometer sensors are prestressed so that they are differently bent in a direction perpendicular to its extension plane to increase the distance between crossing areas of the antennas elements.
Furthermore, at least one of the one or more holding elements may be for mechanically supporting the bolometer sensor only.
Moreover, a support frame may be provided in which the bolometer sensor is centrally arranged, wherein each of the holding elements couples the bolometer sensor to one side of the support frame.
According to an embodiment of a further aspect, a bolometer system is provided comprising: -one or more of the above bolometer devices; and -a readout unit arranged outside the support frame(s) of the one or more bolometer devices which is electrically coupled with the temperature sensing device(s) via the one or more holding elements of each bolometer device.
Brief description of the drawin2s
Preferred embodiments of the present invention are described in more detail in conjunction with the accompanying drawings. in which: Figurc I shows a b&omctcr dcvicc for usc in a bolomcter array having a spiral antenna according to an embodiment; Figure 2 shows a bolometer device further having termination elements at outer ends of the antenna dements according to an embodiment; Figure 3 shows a schematic of the circuit of the temperature sensing element; Figure 4 schematically shows a bolometer device according to an embodiment; Figure 5 schematically shows a bolometer device which is configured to receive two wavelengths according to an embodiment; Figure 6 schematically shows a bolometer device with a cloverleaf antenna according to an embodiment; and Figure 7 schematically shows a circuit of the temperature sensing element for use with the cloverleaf antenna of Figure 6.
Detailed description of embodiments
Figure 1 schematically shows a top view of a bolometer device I for use in a bolorneter array for imaging purposes. The bolometer device I may represent one pixel of the bolorneter array.
The bolometer device I is defined by the support frame 2. A plurality of support frames 2 might be attached in an array on a substrate (not shown). The support frames 2 span over a large cavity which has a size of the wh&e pixd array. In the interior of each support frame 2, a temperature sensing element 3 is centrally arranged from which two antenna elements 4 extend outwardly. The antenna elements 4 may be substantially identical in size and shape. In the present embodiment the antenna elements 4 are formed of spiral arms and extend from the central temperature sensing element 3 to opposing outward directions. The antenna elements 4 are formed on or by the full or partial extension of the spiral arms.
For receiving electromagnetic radiation in a frequency range between 0.5 and 1.5 THz corresponding to wavelengths X in a range between 200 tm and 600 urn, the side length of the support frame 2 should be around 250 pm.
Each of the two antenna elements 4 is supported by a holding element 5 (holding arm) bridging the respective antenna element 4 and one side of the support frame 2, so that the joint structure of the antenna elements 4 and the temperature sensing element 3 is supported in the interior formed by the support frame 2 without getting into contact with the substrate or any surrounding structures.
The holding elements S are connected to an outer portion of the antenna elements 4, so that the holding elements 5 and the antenna elements 4 do not cross each other. This serves to avoid any thermal shortcut caused by tilting or deformation of the antenna elements 4 and/or the holding elements 5.
The holding elements S and the antenna elements 4 are electrically conductive so as to carry a detection culTent to and from the temperature sensing element 3 to perform a readout thereof.
At the support frame 2, the holding elements 5 are therefore coupled with a (not shown) readout circuit.
The bolometer device I can be substantially produced using a standard silicon technology, such as a CMOS process technology, forming the circuitry on the temperature sensing element 3 and the metallization of the antenna elements 4. Thereafter, the antenna elements 4.
the temperature sensing device 3 and the holding elements 5 are excavated from a polysilicon layer using an MEMS etching process. The antenna element 4 and the holding element 5 may be substantially formed of a conductive material, wherein polysilicon is prefelTed for the holding elements 5 as there are standard selective etching processes available.
In order to tune the sensitivity of the bolometer device I to a predetermined frequency range, the effective length of the antenna elements 4 can be properly defined. The antenna elements 4 may extend from the central temperature sensing element 3 outwardly and may be substantially made of conductive material. To define the effective length of the part of the spiral arms which shall form the antenna elements 4. a termination element 6, as is shown in Figure 2, can be formed on or in the spiral arms. The termination element 6 may be placed at a position such that the length between the termination element 6 and the inner end of the antenna element 4 at the temperature sensing element 3 colTesponds to the required length of the antenna element 4 which is needed to obtain a required bandwidth and frequency range.
In the context of this description, the length of the spiral arms, which extend outwardly from the termination element 6, belongs to the holding element 5. In other words, the portions of the spiral arms which extend outwardly from the respective termination element 6 correspond to a portion of the respective holding element 5.
The termination element 6 can e. g. be made of a short stretch of non-silicided silicon which has a high impedance and can be used to practically insulate the antenna element 4 from the rest of the spiral arm or the rest of the holding element 5. respectively. The termination element 6 may be configured to provide a full reflectivity for received electromagnetic radiation in the frequency range to be sensed. The termination element 6 might be provided as a resistivity or as an inductance which is dimensioned to define an electrical outer end of the antenna element 4 for the electromagnetic radiation in the THz range.
Instead of two spiral antenna elements 4, also four spiral antenna elements 4 can be provided, each of which is arranged around the temperature sensing element 3 at an angle of 90°with respect to its neighbor antenna elements. It may be provided that two holding elements 5 are attached to one spira' antenna dement 4. Using four antenna elements 4 may help to avoid asymmetry and therefore a polarization asymmetry of the provided antennae.
In Figure 3. a schematic of the temperature sensing dement 3 is shown. The temperature sensing element 3 is electrically connected to a (not shown) readout circuit outside of the bolometer device 1 via the conductive holding element 5 and the conductive antenna element 4. Hence, as the antenna elements 4 are used both for receiving the electromagnetic radiation and for conducting the electrical signa' for reading out the temperature sensing element 3, the temperature sensing element 3 only requires two contact terminals 31.
The temperature sensing element 3 comprises an active sensor element 32. A detection current through the active sensor element 32 corresponds or may be associated to the temperature in the temperature sensing element 3. The antenna elements 4 which are coupled with the contact terminals 31 are terminated by termination resistors 33 which are serially connected between the contact terminals 31 together with a serially connected blocking capacitor 35. The termination resistors 33 serve as terminations for the antenna. The blocking capacitor 35 serves to prevent DC culTent flowing through the termination resistors 33. To block the AC current induced into the antenna by incoming electromagnetic radiation from flowing through the sensor element 32, the sensor element 32 is coupled in series with two blocking resistors 34 between the contacts 31. As an example, the termination resistors 33 may have 100 12 each, while the blocking resistors 34 are configured to have 500 12 each.
Figure 4 shows a top view of a bolometer device 41 according to another embodiment. The bolometer device 41 has a support frame 42 and two independent temperature sensing elements 43, each of which is coupled to a linear polarization antenna, such as a dipole antenna. The linear polarization antennae have two antenna elements 44 extending in opposite directions from the respective temperature sensing elements 43. The antenna elements 44 of the linear polarization antennae associated to the two independent temperature sensing elements 43 extend substantially perpendicularly to each other.
The ends of the dipole antennae are attached to holding elements 45, so that each end of an antenna element 44 of the dipole antennae is connected to a respective side of the rectangular support frame 42 it is directed to. Each of the linear dipole antennae is configured to receive one polarization only and, due to the perpendicular arrangement, a vertical and horizontal linear polarization can be received, respectively.
The holding elements 45 may be formed rneauideringly in order to increase the overall length of the respective antenna element 44 and the respective holding element 45 between the temperature sensing element 43 and the respective side of the support frame 42. This is to provide the required thermal resistance between the temperature sensing element 43 and the surrounding structures.
While the temperature sensing element 43 may be implemented from active components in a SOT CMOS technology, the holding elements 45 are formed of polysilicon and the antenna elements 44 are foirned of metal to improve the electrical conductivity of the antenna elements. To avoid electrical shorts between the perpendicularly crossing antenna elements 44, different metal layers may be used to form the antenna conductor, at least at the crossing region of both dipole antennae. The physica' separation between the two antenna elements 44 is achieved by slightly under etching the structure since this also removes an insulating oxide between the metal layers. The two perpendicular antenna elements are further separated by purposely introducing stress. Due to different stress one antenna will lift up out of the plane leading to additional separation.
Additionally or alternatively, the holding elements 45 for holding the antenna elements 44 of the one dipole antenna may have a length that differs from that of the holding elements 45 for holding the antenna elements 44 of the other dipole antenna. When forming the holding elements 45, a material combination of polysilicon and silicon dioxide can be used which may provide a structural stress in a direction away from the substrate (upward direction), so that the dipole antenna supported by the longer holding elements 45 is bent further upward after release by the MEMS process. As a result, the antenna elements 44 of the dipole antennae cannot accidentally contact each other.
As already described in the above in conjunction with the spiral antenna elements, a termination element 46, such as a short stretch of non-silicided polysilicon with a higher resistivity, can be provided between the antenna elements 44 of the dipole antennae and the respective holding elements 45 to act as a radio-frequency choke and to terminate the dipole antenna.
Figure 5 schematically shows a bolometer device 51 which is configured to receive two wavelengths separately, independently of its polarization. The bolometer device 51 has a support frame 52, two temperature sensing elements 53, antenna elements 54 and four holding elements 55 arranged in a similar manner as described with respect to Figure 4 and differs from the embodiment of Figure 4 in that a cross dipole antennae is provided for each temperature sensing element 53. Each cross dipole antenna has four antenna elements 54, each having the same length. Two opposite ends of the antenna elements 54 of each of the cross dipole antennae may be supported by holding elements 55, as described before with respect to the embodiment of Figure 4. Thus, the holding elements 55 are arranged at four sides of the support frame 52.
The antenna elements 54 of both cross dipole antennae may have different lengths. so that each of the cross dipole antennae is adapted to receive radiation in a different frequency range. Moreover, as each of the temperature sensing elements 53 is provided with a cross dipole antenna, radiation of two linear polarizations can be received for each frequency range. It may be provided that the antenna elements 54 of the two cross dipole antennae overlap to keep a distance between the temperature sensing elements 53 within the support frame 52 low, so that different wavelengths can be detected in one pixel without an offset.
Figure 6 schematically shows another configuration of a bolorneter device 61. The bolometer device 61 has a support frame 62, one temperature sensing element 63, antenna elements 64 and four holding elements 65. The antenna in this embodiment is formed as a cloverleaf antenna which is capaNe of receiving radiation with a horizontal and vertical linear polanzation. The advantage of using the cloverleaf antenna is that an adequate matching of a wide frequency range can be obtained and that the antenna has a gain which is high enough to get an area efficiency of about the pixel size.
In one embodiment, the antenna may be made of a metal layer having four antenna elements 64 each forming one "leaf" (winding) of the cloverleaf antenna. Each antenna element 64 is coupled to the temperature sensing element 63 that is arranged in the center of the support frame 62. The antenna elements 64 are substantially arranged perpendicularly to each other, while two opposite first antenna elements 64a are mechanically supported by first holding elements 65a. It may be provided that the first holding elements 65a connect the first antenna elements 64a at a position most distanced from the temperature sensing element 63. The first holding elements 65a may be made of an dectrically non-conductive material, such as silicon dioxide, which also provides a low thermal conductivity and a strong mechanical support.
Two other antenna dements, second antenna elements 64b, arranged perpendicularly to the first antenna elements 64a, are coupled with a second holding element 65b which is made conductive, such as made from polysilicon or active silicon in an SOl process, to provide a path for the detection current for reading out the temperature sensing element 63.
Figure 7 schematically shows a circuit of the temperature sensing element 63 used for the cloverleaf antenna. Each of the first and second antenna elements 64a, 64b is connected to a separate first or second contact terminal 71 a, 7 lb respectively. The contact terminals 71 a, 7 lb are coupled to a common center node 72 via a respective termination resistor 73, which in the present case may have a value of 100 11. In the detection current path between one of the second contact terminals 7 lb and the center node 72, a field effect transistor device 74 is arranged which is connected in series to the termination resistor 73 in the same path and acts as a diode. As the gate-source capacity of the field effect transistor 74 provides a short circuit for the electromagnetic signal, the signal received by the second antenna elements is not
attenuated by the field effect transistor 74.
Reference list 1,41,51,61 bolometerdevice 2, 42, 52, 62 upport frame 3, 43, 53, 63 temperature sensing element 4, 44, 54, 64 antenna element 5, 45, 55, 65 holding element 6, 46 termination element 31, 71a, 71b contact terminals 32 sensor element 33 termination resistor 34 blocking resistor 3 blocking capacitor 64a, 64b first and second antenna elements 65a, 65b first and second holding elements 71 a, 7 lb irst and second contact terminals 72 center node 73 termination resistor
74 field effect transistor
Claims (18)
- Claims 1. A bolometer device (1, 41, 51, 61) for use in a bolorneter array, comprising: -a bolometer sensor comprising: at least two antenna elements (4, 44. 54, 64) coupled with one of their ends at a center position; a temperature sensing element (3. 43, 53, 63) attached at the center position for detecting a temperature at the center position and for providing an electrical measure in response to the detected temperature; and -one or more holding elements (5, 45, 55, 65), each for mechanically supporting the bolometer sensor at an end portion of a respective one of the antenna elements (4, 44, 54, 64), wherein at least one of the one or more holding elements (5, 45, 55, 65) is electrically conductive, so that the electrical measure can be read out via the holding element (5, 45, 55, 65).
- 2. The bolometer device (1. 41, 51, 61) according to claim 1, wherein the bolometer sensor is supported merely by the one or more holding elements (5, 4,55, 65), sü that it is kept distanced from sulTounding structures.
- 3. The bolometer device (1. 41, 51, 61) according to claim 1 or 2, wherein the holding element (5, 45, 55, 65) has a length which provides a thermal resistivity of at least 5 x l0 K/W.
- 4. The bolometer device (1) according to any of the claims ito 3, wherein the antenna elements (4) are formed spirally extending outwardly from the center position.
- 5. The bolometer device (41, 51) according to any of the claims 1 to 3, wherein the antenna elements (44, 54) are formed as linearly extending outwardly from the center position.
- 6. The bolometer device (61) according to any of the claims 1 to 3, wherein the antenna elements (64) form a cloverleaf antenna, wherein the antenna elements (64) are formed as antenna windings which extend outwardly from the center position.
- 7. The bolometer device (1, 41, 51, 61) according to any of the claims I to 6. wherein the antenna elements (4. 44, 54, 64) and the holding dements (5, 45, 55, 65) are integrally formed of an electrically conductive first material, in particular of p&ysilicon or active silicon, wherein the antenna elements (4. 44, 54, 64) further include a layer of a second matenal with a better conductivity as the first matenal.
- 8. The bolometer device (1. 41, 51, 61) according to any of the claims I to 6, wherein the holding elements (5. 45, 55. 65) are formed of an dectrically conductive first material, in particular of polysilicon or active silicon, wherein the antenna elements (4, 44, 54, 64) are made of a second material with a better conductivity as the first material, such as metal.
- 9. The bolometer device (1, 41, 51, 61) according to claim 7 or 8, wherein termination elements (6, 46) with a higher impedance than the antenna elements (4, 44, 54, 64) and the holding elements (5, 45, 55, 65) are arranged between the holding elements (5, 45, 55, 65) and their respective antenna elements (4. 44. 54, 64) at positions to define effective engths of the antenna dements (4, 44, 54. 64).
- 10. The bolometer device (1, 41, 51, 61) according to any of the claims 1 to 9, wherein the temperature sensing element has a circuit comprising: -a termination resistor (33, 73) for each of the antenna elements (4. 44, 54, 64) via which the antenna elements (4, 44, 54, 64) are coupled to a common node; -a capacitor (35) for blocking a DC voltage or current caused by reading out the electrical measure; and -a temperature sensor (32, 74). in particular a field effect transistor, coupled to the common node.
- 11. The bolometer device (1. 41, 51, 61) according to claim 10, wherein the temperature sensing element (3, 43, 53. 63) has blocking resistors for coupling the temperature sensor to respective antenna elements (4, 44, 54. 64), so that the current induced by the reception of electromagnetic radiation is substantially blocked from the temperature sensor.
- 12. The bolorneter device (1, 41, 51, 61) according to any of the claims 1 to 11, wherein the bolometer sensor is provided with four antenna elements (4, 44, 54. 64) extending crosswise from the center position.
- 13. The bolometer device (I, 41, 51, 61) according to any of the claims 1 to 12, wherein a p'urality of bolometer sensors are provided, wherein at east one antenna element (4.44, 54, 64) of each of the bolometer sensors overlaps another antenna element (4, 44, 54, 64) of another one of the bolorneter sensors, so that absorbing areas of the bothmeter sensors overlap.
- 14. The bolometer device (1, 41, 51. 61) according to claim 13, wherein the one or more holding elements (5, 45, 55, 65) for each of the plurality of the bolometer sensors are prestressed so that they are differently bent in a direction perpendicular to its extension plane to increase the distance between crossing areas of the antennas elements (4,44, 54. 64).
- 15. The bolorneter device (1. 41, 51, 61) according to claim 13 or 14, wherein the antenna elements (4, 44, 54, 64) of the b&ometer sensors have different effective lengths to provide sensitivities in different frequency ranges.
- 16. The bolorneter device (1. 41. 51, 61) according to any of the claims Ito 15, wherein at least one of the one or more holding elements (5. 4,55, 65) is for mechanically supporting the bolometer sensor only.
- 17. The bolometer device (1,41,51,61) according to any of the claims Ito 16, wherein a support frame (2, 42, 52, 62) is provided in which the bolometer sensor is centrally arranged, wherein each of the holding elements (5. 45, 55, 65) couples the bolometer sensor with one side of the support frame (2, 42, 52, 62).
- 18. Bolometer system comprising: -one or morebolometerdevices (1,41,51,61) according to claim 17; and -a readout unit outside the support frame(s) (2, 42, 52, 62) of the one or more bolorneter devices which is electrically coupled to the temperature sensing device(s) (3, 43, 53, 63) via the one or more holding elements (5, 45, 55. 65) of each bolometer device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB201219199A GB2507306A (en) | 2012-10-25 | 2012-10-25 | An antenna-coupled bolometer device for sensing electromagnetic radiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB201219199A GB2507306A (en) | 2012-10-25 | 2012-10-25 | An antenna-coupled bolometer device for sensing electromagnetic radiation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB201219199D0 GB201219199D0 (en) | 2012-12-12 |
| GB2507306A true GB2507306A (en) | 2014-04-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB201219199A Withdrawn GB2507306A (en) | 2012-10-25 | 2012-10-25 | An antenna-coupled bolometer device for sensing electromagnetic radiation |
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| Country | Link |
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| GB (1) | GB2507306A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060231761A1 (en) * | 2005-04-18 | 2006-10-19 | Commissariat A L'energie Atomique | Bolometric detector, device for detecting submillimetric and millimetric electromagnetic waves that uses such a detector |
| WO2011048170A1 (en) * | 2009-10-23 | 2011-04-28 | International Business Machines Corporation | Terahertz detector comprising a capacitively coupled antenna |
| WO2011151756A2 (en) * | 2010-05-30 | 2011-12-08 | Technion R&D Foundation | Sensing device having a therhal antenna and a method for sensing electromagnetic radiation |
-
2012
- 2012-10-25 GB GB201219199A patent/GB2507306A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060231761A1 (en) * | 2005-04-18 | 2006-10-19 | Commissariat A L'energie Atomique | Bolometric detector, device for detecting submillimetric and millimetric electromagnetic waves that uses such a detector |
| WO2011048170A1 (en) * | 2009-10-23 | 2011-04-28 | International Business Machines Corporation | Terahertz detector comprising a capacitively coupled antenna |
| WO2011151756A2 (en) * | 2010-05-30 | 2011-12-08 | Technion R&D Foundation | Sensing device having a therhal antenna and a method for sensing electromagnetic radiation |
Also Published As
| Publication number | Publication date |
|---|---|
| GB201219199D0 (en) | 2012-12-12 |
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| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |