GB2490995B - Radio frequency integrated circuit - Google Patents

Radio frequency integrated circuit

Info

Publication number
GB2490995B
GB2490995B GB201206423A GB201206423A GB2490995B GB 2490995 B GB2490995 B GB 2490995B GB 201206423 A GB201206423 A GB 201206423A GB 201206423 A GB201206423 A GB 201206423A GB 2490995 B GB2490995 B GB 2490995B
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
radio frequency
frequency integrated
radio
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB201206423A
Other versions
GB2490995A (en
GB201206423D0 (en
Inventor
Jonne Juhani Riekki
Jouni Kristian Kaukovuori
Jari Johannes Heikkinen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Mobile Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/111,423 external-priority patent/US8378748B2/en
Priority claimed from GB1108444.9A external-priority patent/GB2481487B/en
Priority claimed from US13/224,430 external-priority patent/US8427239B2/en
Priority claimed from GB1115183.4A external-priority patent/GB2486515B/en
Application filed by Renesas Mobile Corp filed Critical Renesas Mobile Corp
Publication of GB201206423D0 publication Critical patent/GB201206423D0/en
Publication of GB2490995A publication Critical patent/GB2490995A/en
Application granted granted Critical
Publication of GB2490995B publication Critical patent/GB2490995B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
    • H03F3/45641—Measuring at the loading circuit of the differential amplifier
    • H03F3/45645—Controlling the input circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/207—A hybrid coupler being used as power measuring circuit at the output of an amplifier circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45292—Indexing scheme relating to differential amplifiers the AAC comprising biasing means controlled by the signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45301—Indexing scheme relating to differential amplifiers there are multiple cascaded folded or not folded common gate stages of a cascode dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45316—Indexing scheme relating to differential amplifiers the AAC comprising one or more discrete inductive elements or coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45352—Indexing scheme relating to differential amplifiers the AAC comprising a combination of a plurality of transistors, e.g. Darlington coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45358—Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their sources and drains only, e.g. in a cascode dif amp, only those forming the composite common source transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45396—Indexing scheme relating to differential amplifiers the AAC comprising one or more switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45424—Indexing scheme relating to differential amplifiers the CMCL comprising a comparator circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45434—Indexing scheme relating to differential amplifiers the CMCL output control signal being a voltage signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45528—Indexing scheme relating to differential amplifiers the FBC comprising one or more passive resistors and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45536—Indexing scheme relating to differential amplifiers the FBC comprising a switch and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45544—Indexing scheme relating to differential amplifiers the IC comprising one or more capacitors, e.g. coupling capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45554—Indexing scheme relating to differential amplifiers the IC comprising one or more coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45594—Indexing scheme relating to differential amplifiers the IC comprising one or more resistors, which are not biasing resistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45596—Indexing scheme relating to differential amplifiers the IC comprising one or more biasing resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45618—Indexing scheme relating to differential amplifiers the IC comprising only one switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
GB201206423A 2011-05-19 2011-10-12 Radio frequency integrated circuit Expired - Fee Related GB2490995B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13/111,423 US8378748B2 (en) 2011-05-19 2011-05-19 Amplifier
GB1108444.9A GB2481487B (en) 2011-05-19 2011-05-19 Amplifier
US13/224,430 US8427239B2 (en) 2011-09-02 2011-09-02 Apparatus and method for low noise amplification
GB1115183.4A GB2486515B (en) 2011-09-02 2011-09-02 Apparatus and method for low noise amplification

Publications (3)

Publication Number Publication Date
GB201206423D0 GB201206423D0 (en) 2012-05-30
GB2490995A GB2490995A (en) 2012-11-21
GB2490995B true GB2490995B (en) 2013-05-15

Family

ID=45091919

Family Applications (3)

Application Number Title Priority Date Filing Date
GB201206423A Expired - Fee Related GB2490995B (en) 2011-05-19 2011-10-12 Radio frequency integrated circuit
GB1117607.0A Active GB2490977B (en) 2011-05-19 2011-10-12 Amplifier
GB201117606A Withdrawn GB2490976A (en) 2011-05-19 2011-10-12 LNAs adaptable between inductively degenerated and internal impedance matching configurations

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB1117607.0A Active GB2490977B (en) 2011-05-19 2011-10-12 Amplifier
GB201117606A Withdrawn GB2490976A (en) 2011-05-19 2011-10-12 LNAs adaptable between inductively degenerated and internal impedance matching configurations

Country Status (1)

Country Link
GB (3) GB2490995B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9350310B2 (en) * 2013-05-24 2016-05-24 Qualcomm Incorporated Receiver front end for carrier aggregation
GB2545487A (en) * 2015-12-18 2017-06-21 Nordic Semiconductor Asa Radio frequency receiver
CN106234557A (en) * 2016-10-10 2016-12-21 成都沃特塞恩电子技术有限公司 A kind of radio frequency power source and radio frequency thawing apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6949979B2 (en) * 2002-12-05 2005-09-27 Memetics Technology Co. LTD Designing methods and circuits for multi-band electronic circuits
US7084707B2 (en) * 2004-09-24 2006-08-01 Realtek Semiconductor Corp. Low noise amplifier and related method
CN101834576A (en) * 2010-04-08 2010-09-15 复旦大学 Multimode tunable CMOS (Complementary Metal Oxide Semiconductor) differential low noise amplifier
CN101951229A (en) * 2010-10-15 2011-01-19 成都国腾电子技术股份有限公司 Multi-gain mode low-noise amplifier
KR101019716B1 (en) * 2008-12-29 2011-03-07 한국과학기술원 All band-low noise amplifier

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10132800C1 (en) * 2001-07-06 2003-01-30 Infineon Technologies Ag Low noise amplifier circuit
KR100704568B1 (en) * 2002-08-05 2007-04-06 인티그런트 테크놀로지즈(주) Variable Gain Low Noise Amplifier
US7843270B2 (en) * 2006-10-04 2010-11-30 Nanyang Technological University Low noise amplifier circuit with noise cancellation and increased gain
US7633345B2 (en) * 2007-12-26 2009-12-15 Mediatek Inc. Amplifier and the method thereof
US8374557B2 (en) * 2009-07-06 2013-02-12 Rfaxis, Inc. Radio frequency front end circuit with antenna diversity for multipath mitigation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6949979B2 (en) * 2002-12-05 2005-09-27 Memetics Technology Co. LTD Designing methods and circuits for multi-band electronic circuits
US7084707B2 (en) * 2004-09-24 2006-08-01 Realtek Semiconductor Corp. Low noise amplifier and related method
KR101019716B1 (en) * 2008-12-29 2011-03-07 한국과학기술원 All band-low noise amplifier
CN101834576A (en) * 2010-04-08 2010-09-15 复旦大学 Multimode tunable CMOS (Complementary Metal Oxide Semiconductor) differential low noise amplifier
CN101951229A (en) * 2010-10-15 2011-01-19 成都国腾电子技术股份有限公司 Multi-gain mode low-noise amplifier

Also Published As

Publication number Publication date
GB2490976A (en) 2012-11-21
GB2490995A (en) 2012-11-21
GB2490977A (en) 2012-11-21
GB2490977B (en) 2016-01-13
GB201206423D0 (en) 2012-05-30
GB201117607D0 (en) 2011-11-23
GB201117606D0 (en) 2011-11-23

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20140102 AND 20140108

732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20140109 AND 20140115

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20161012