GB2462806A - Light emitting device intensity correction - Google Patents

Light emitting device intensity correction Download PDF

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Publication number
GB2462806A
GB2462806A GB0814844A GB0814844A GB2462806A GB 2462806 A GB2462806 A GB 2462806A GB 0814844 A GB0814844 A GB 0814844A GB 0814844 A GB0814844 A GB 0814844A GB 2462806 A GB2462806 A GB 2462806A
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GB
United Kingdom
Prior art keywords
light emitting
optical element
emitting device
luminous intensity
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0814844A
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GB0814844D0 (en
Inventor
Wei Shen
Yuan-Lin Lee
Yu-Chien Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Glory Science Co Ltd
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Glory Science Co Ltd
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Filing date
Publication date
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Priority to GB0814844A priority Critical patent/GB2462806A/en
Publication of GB0814844D0 publication Critical patent/GB0814844D0/en
Publication of GB2462806A publication Critical patent/GB2462806A/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The intensity of an LED is reduced by texturing the surface of the LED encapsulation or by modifying phosphor material in the encapsulation. Surface irregularities 3 in the encapsulation material, which increase light scattering, may be formed by laser irradiation or by micro sand blasting. Also, irregularities may be induced in the surface of a reflector cap 14 mounted on the LED support by laser irradiation. Alternatively, phosphor material in the encapsulation may be damaged by laser irradiation to decrease the intensity of the LED emission. In an array of LEDs used for a LCD backlight the intensity of individual LEDs may be modified in this manner to ensure uniformity of illumination across the array. Alternatively, the transitivity of a transparent plate or a mirror in the optical path of an LED may be modified to reduce the LED intensity to a desired value.

Description

LIGHT EMITTiNG DEVICE AND METHOD OF MANUFACTURING
THE LIGHT EMITTING DEVICE
BACKGROUND OF THE INVENTION
1. Field of the Invention
[0001] The present invention relates to a light emitting device and, more particularly, to a method of manufacturing a light emitting device with a consistent luminous intensity.
2. The Related Art 10002] Nowadays, a backlight module is a necessary component used in a display device for emitting light beam. Base on standards of RoHS, light emitting diodes (LED) have replaced cold cathode fluorescent lamps (CCFL) used in backlight module and used for light source.
[00031 A large size backlight module, for example, the dimension thereof is larger than 20 inch, is used in a television. A middle size backlight module, for example, the dimension thereof is smaller than 17 inch and larger than 12 inch, is used in a monitor of a laptop. A small size liquid crystal display device, for example, the dimension thereof is smaller than 10 inch, is used in a mobile phone, a personal digital assistant, a digital camera and etc. [00041 Usually, the backlight module has many LEDs arranged in line or array for emitting sufficient luminous intensity. According to consideration of distribution of luminous intensity of the backlight module, all LEDs used in backlight module are needed to equip a consistent luminous intensity.
[0005] In order to manufacture a backlight module of which distribution of luminous intensity is uniform, picking and choosing LEDs equipped with a consistent luminous intensity is a necessary procedure before manufacturing the backlight module. However, the cost raised due to the LEDs of which luminous intensity are different to the consistent luminous intensity are weeded out.
SUMMARY OF THE INVENTION
[0006] An object of the present invention is to provide a light emitting device having a base, a light emitting chip, a reflecting cap and a destruct structure. The light emitting chip is mounted on the base and defmes a light emitting surface thereon. The reflecting cap is mounted on the base and receives the light emitting chip therein. The destruct structure is formed on the light emitting surface of the light emitting chip.
[0007] Another object of the present invention is to provide a method of manufacturing the light emitting device. The manufacturing method includes: step 1: setting a threshold of luminous intensity; step 2: measuring a luminous intensity of a measured light emitting unit; step 3: calculating an offset value between the threshold of luminous intensity and the measured luminous intensity of the measured light emitting unit; and step 4: performing a destruct structure capable of decreasing energy of light beam passed therethrough on a surface of an optical element of the measured light emitting device, wherein the energy decreasing efficiency of the destruct structure is direct proportion to the offset value.
[00081 While the light beam is radiated from the light emitting chip of the measured light emitting device and to the destruct structure, few light energy is absorbed or scattered by the destruct structure to decrease the luminous intensity.
Therefore, the light emitting device with the destruct structure has a consistent luminous intensity due to the light absorbing ratio or the light scattering coefficient of the destruct structure is direct proportion to the offset luminous intensity.
BRIEF DESCRIPTION OF THE DRAWINGS
[00091 The present invention will be apparent to those skilled in the art by reading the following description of preferred embodiments thereof, with reference to the attached drawings, in which: [00101 FIG. 1 is a section view showing a first embodiment of a light emitting device according to the present invention; [00111 FIG 2 is a section view showing a second embodiment of the light emitting device according to the present invention; [0012] FIG 3 is a flow chart showing a method of manufacturing the light emitting device according to the present invention; [00131 FIG 4 is a flow chart showing a method of manufacturing a destruct structure by laser beam according to the present invention; 100141 FIG. 5 is a flow chart showing a method of manufactwing the destruct structure by micro sand blasting according to the present invention; [0015] FIG. 6 is a section view showing a third embodiment of the light emitting device according to the present invention; [00161 FIG. 7 a section view showing a fourth embodiment of the light emitting device according to the present invention; [0017] FIG. 8 a section view showing a fifth embodiment of the light emitting device according to the present invention; and [00181 FIG. 9 is a section view showing a sixth embodiment of the light emitting device according to the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[00191 Please refer to FIG. 1, showing a first exemplary embodiment of a light emitting device 100. The light emitting device 100 has a base 1, a light emitting chip 2 positioned on a top surface of the base 1 and at least one destruct structure.
The base 1 has a substrate 10, a first metallic contact 11, a second metallic contact 12, a wire bond 13 and a reflecting cap 14.
[0020] The first metallic contact 11 and the second metallic contact 12 are disposed on a top surface of the substrate 10. The light emitting chip 2 defmes a first light emitting surface 20 on a top surface thereof, which is mounted on and contacts to the first metallic contact ii. The wire bond 13 interconnects between the light emitting chip 2 and the second metallic contact 12. The reflecting cap 14 is mounted on the top surface of the substrate 10, in which are the light emitting chip 2 and the wire bond 13. Specially, the destruct structure is a scorching artifact 3 foimed on the first light emitting surface 20 of the light emitting chip 2.
[0021] A power source can be coupled to the first metallic contact 11 and the second metallic contact 12, and then the light emitting chip 2 is caused to radiate light beam. The light beam radiates outwardly from the first light emitting surface of the light emitting chip 2 to define a luminous path 4 (tracks of arrows in the figures).
[00221 Please refer to FIG 2, showing a second exemplary embodiment of the light emitting device 100. The light emitting device 100 further has an encapsulant 15. The encapsulatnt 15 is formed in the reflecting cap 14 and encapsulates the light emitting chip 2 to define a second light emitting surface 150. The scorching artifact 3 is formed on the second light emitting surface 150 of the encapsulatnt 15.
Specifically, the encapsulant 15 is made of a transparent resin or mixed with phosphors 151.
[0023] If the encapsulant 15 is made of the transparent resin, the light beam is radiated from the light emitting chip 2, through the encapsulant 15 directly and then outwardly from the second light emitting surface 150. If the encapsulant 15 is made of the transparent resin mixed with the phosphors 151, the light beam radiated from the light emitting chip 2 is excited and reflected by the phosphors 151 to alter frequency spectrum thereof, and then the altered light beam is radiated outwardly from the second light emitting surface 150.
[0024] Specifically, the frequency spectrum of the light beam radiated from the light emitting surface 150 of the light emitting unit 100 can be controlled by choosing the frequency spectrum of the light beam emitted from the light emitting chip 2 and the phosphors 151.
[0025] Please refer to FIG. 3, a flow chart of a method of manufacturing the light emitting device 100 is shown. The manufacturing method includes the following steps: SO 1: previously setting a threshold range of luminous intensity; S02: measuring a luminous intensity of a measured light emitting device; S03: comparing the measured luminous intensity of the measured light emitting device and the threshold range of the luminous intensity, while the measured luminous intensity of the measured light emitting device is included in the threshold range of the luminous intensity, S04 is performed, while the measured luminous intensity of the measured light emitting device is below the threshold range of the luminous intensity, SOS is performed, while the measured luminous intensity of the measured light emitting device is over the threshold range of the luminous intensity, S06 is performed; S04: the measured light emitting unit can be directly used; S05: the measured light emitting unit can not be used; and S06: forming the scorching artifact 3 on the first light emitting surface 20 of the light emitting chip 2 of the measured light emitting device or on the second light emitting surface 150 of the encapsulant 15 of the measured light emitting device, to decrease the luminous intensity of the measured light emitting device, to make the luminous intensity of the measured light emitting device with the scorching artifact 3 is in the threshold range of luminous intensity.
100261 Please refer to FIG 4, showing a flow chart of a method of manufacturing the scorching artifact 3 by laser beam. The manufacturing method includes the following steps: S60: calculating an offset value between the threshold of luminous intensity and the measured luminous intensity of the measured light emitting device; and S6 1: radiating laser beam with sufficient energy to the first light emitting surface 20 of the light emitting chip 2 or the second light emitting surface 150 of the encapsulant 15 to form at least one scorching artifact 3, wherein the amount or area of the scorching artifact 3 is direct proportion to the offset value.
[00271 In an instance, the threshold of the luminous intensity is set to 100 lmIw (lumen per watt). The threshold range of luminous intensity is set to one percent, therefore, the threshold range of luminous intensity is from 99 lmIw to 101 lm/w.
While the luminous intensity of the measured light emitting device is over 101 hnlw, at least one scorching artifact 3 is formed on the first light emitting surface of the light emitting chip 2 or on the second light emitting surface 150 of the encapsulant 15 by radiating laser beam with sufficient energy.
[00281 Specifically, the laser beam can be aimed at the phosphor 151 for damaging the phosphor 151. Therefore, the light beam radiated from the light emitting chip 2 can not be excited and reflected by the damaged phosphors 151.
Therefore, the luminous intensity of the light emitting device 100 is decreased.
[0029] The measured light emitting device is directly used while the luminous intensity thereof is in the threshold range of the luminous intensity. The first light emitting surface 20 of the light emitting chip 2 or the second light emitting surface of the encapsulant 15 of the measured light emitting device forms the scorching artifact 3 by radiating laser beam with sufficient energy thereon while the luminous intensity of the measured light emitting device is over the threshold range of the luminous intensity.
10030] The amount or area of the scorching artifact 3 with respect to a light absorbing ratio is direct proportion to the offset value between the threshold of the luminous intensity and the measured luminous intensity. While the light beam radiated from the light emitting chip 2 passes through the scorching artifact 3, few light energy is absorbed by the scorching artifact 3 to decrease the luminous intensity of the light emitting device 100.
[00311 The amount of the absorbed light energy is with respect to the light absorbing ratio of the scorching artifact. Therefore, the light emitting device 100 with the scorching artifact 3 has a consistent luminous intensity.
[0032] Please refer to FIG. 5, a flow chart of a method of manufacturing the destruct structure by micro sand blasting is shown. The manufacturing method includes the following steps: S60' : calculating an offset value between the threshold of luminous intensity and the measured luminous intensity of the measured light emitting device; and S6 1' : blasting micro sand to the first light emitting surface 20 of the light emitting chip 2 or the second light emitting surface 150 of the encapsulant 15 to form at least one lumpy structure 5, wherein the amount or area of the lumpy structure 5 is direct proportion to the offset value.
[00331 In another instance, the threshold of the luminous intensity is set to 100 hnlw. The threshold range of luminous intensity is set to one percent, therefore, the threshold range of luminous intensity is from 99 lm!w to 101 lmIw. While the luminous intensity of the measured light emitting device is over 101 lnilw, at least one lumpy structure 5 is formed on the first light emitting surface 20 of the light emitting chip 2 or on the second light emitting surface 150 of the encapsulant 15 by micro sand blasting.
[00341 Please refer to FIG. 6, showing a third exemplary embodiment of the light emitting device 100. The light emitting device 100 has at least one lumpy structure 5 formed on the first light emitting surface 20 of the light emitting chip 2 thereof. Please refer to FIG 7, showing a fourth exemplary embodiment of the light emitting device 100. The light emitting device 100 has at least one lumpy structure formed on the second light emitting surface 150 of the encapsulant 15 thereof.
[0035] The amount or area of the lumpy structure 5 with respect to a light scattering coefficient is direct proportion to the offset value between the threshold of the luminous intensity and the measured luminous intensity. While the light beam radiated from the light emitting chip 2 passes through the lumpy structure 5, few light beam is scattered to decrease the light energy.
[0036] The light emitting device 100 with the lumpy structure 5 has a consistent luminous intensity due to the amount of the scattered light beam is with respect to the light scattering coefficient of the lumpy structure 5.
100371 Please refer to FIG. 8, showing a fifth exemplary embodiment of a light emitting device 100. The light emitting device 100 further includes a plate-like transparent optical element 6, such as transparent glass, positioned in the luminous path 4. The destruct structure is formed on at least one surface of the transparent optical element 6. The transparent optical element 6 is parallelly positioned upon and apart from the second light emitting surface 150. Furthermore, the transparent optical element 6 can be connected onto the second light emitting surface 150.
[00381 Specifically, the transparent optical element 6 can be made of glass material or plastic material. The destruct structure formed on the transparent optical element 6 can be the scorching artifact 3 or the lumpy structure 5.
100391 The light beam radiated from the light emitting chip 2 is radiated outwardly from the second light emitting surface 150 and then through the transparent optical element 6. Due to few of light beam is radiated to the destruct structure to decrease light energy, the luminous intensity of the light emitting device 100 is decreased.
[00401 Please refer to FIG. 9, showing a sixth exemplary embodiment of the light emitting device 100. The light emitting device 100 further includes a plate-like light reflecting element 7 positioned in the luminous path 4. The destruct structure is formed on at least one surface of the light reflecting element 7. The light reflecting element 7 is obliquely positioned upon and apart from the second light emitting surface 150. The destruct structure formed on the light reflecting element 7 can be the scorching artifact 3 or the lumpy structure 5.
100411 The light beam radiated from the light emitting chip 2 is radiated outwardly from the light emitting surface 150, and reflected by the light reflecting element 7. While few of light beam is radiated to the destruct structure to decrease light energy, the luminous intensity of the light emitting device 100 is therefore decreased.
100421 In another instance, many transparent optical elements 6 and light reflecting elements 7 with distinct amount or area of destruct structure are previously prepared. After the luminous intensity of the measured light emitting device is measured and the offset value is calculated, one transparent optical element 6 or one light reflecting element 7, of which the amount or area of destruct structure is with respect to the offset value, is chosen from the transparent optical elements 6 or the light reflecting elements 7. The corresponding transparent optical element 6 or light reflecting element 7 and the measured light emitting device are assembled.
100431 The destruct structure, such as the scorching artifact 3 and the lumpy structure 5, is formed on the surface of the light emitting chip or the optical element, such as the encapsulant 15, the transparent optical element 6 and the light reflecting element 7, by micro sand blasting or radiating leaser beam.
[00441 The amount or area of the destruct structure with respect to the light absorbing ratio or the light scattering coefficient is direct proportion to the offset value between the threshold of luminous intensity and the original luminous intensity of the light emitting device 100.
[00451 While the light beam is radiated from the measured light emitting device and to the destruct structure, few light energy is absorbed or scattered by the destruct structure to decrease the luminous intensity. Therefore, the light emitting device 100 with the destruct structure has a consistent luminous intensity due to the light absorbing ratio or the light scattering coefficient of the destruct structure is direct proportion to the offset luminous intensity.
[0046] Furthermore, the present invention is not limited to the embodiments described above; various additions, alterations and the like may be made within the scope of the present invention by a person skilled in the art. For example, respective embodiments may be appropriately combined.

Claims (20)

  1. WHAT IS CLAIMED IS: 1. A tight emitting device, comprising: abase; a light emitting chip mounted on said base and defming a light emitting surface; a reflecting cap mounted on said base and receiving said light emitting chip therein; and a destruct structure formed on said light emitting surface of said light emitting chip.
  2. 2. The light emitting device as claimed in claim 1, wherein said destruct structure is a scorching artifact or a lumpy structure.
  3. 3. The light emitting device as claimed in claim 1, wherein said base comprises: a substrate; a first metallic contact disposed on a top surface of said substrate, said light emitting chip mounted on and connected to said first metallic contact; a second metallic contact disposed on said top surface of said substrate; a wire bone interconnected between said light emitting chip and said second metallic contact; and an encapsulant formed in said reflecting cap and encapsulating said light emitting chip.
  4. 4. A light emitting device, comprising: abase; a light emitting chip mounted on said base for radiating light beam defming a luminous path; a reflecting cap mounted on said base and receiving said light emitting chip therein; an optical element positioned in said luminous path; and a destruct structure formed on at least one surface of said optical element.
  5. 5. The light emitting device as claimed in claim 4, wherein said destruct structure is a scorching artifact or a lumpy structure.
  6. 6. The light emitting device as claimed in claim 4, wherein said optical element is a transparent element or a light reflecting element.
  7. 7. The light emitting device as claimed in claim 4, wherein said base comprises: a substrate; a first metallic contact disposed on a top surface of said substrate, said light emitting chip mounted on and connected to said first metallic contact; a second metallic contact disposed on said top surface of said substrate; a wire bone interconnected between said light emitting chip and said second metallic contact; and an encapsulant mounted on said substrate and covering said light emitting chip.
  8. 8. A method of manufacturing a light emitting device, comprising: setting a threshold of luminous intensity; measuring luminous intensity of a measured light emitting device; calculating an offset value between said threshold of luminous intensity and said measured luminous intensity of said measured light emitting device; and performing a destruct structure capable of decreasing energy of light beam on a surface of an optical element of said measured light emitting device, wherein the energy decreasing efficiency of said destruct structure is direct proportion to said offset value.
  9. 9. The method of manufacturing a light emitting unit as claimed in claim 8, wherein said method of performing said destruct structure comprising: setting a threshold range of luminous intensity; and forming a scorching artifact on said optical element by radiating laser beam if said measured luminous intensity of said measured light emitting device being over said threshold range of luminous intensity, wherein said energy decreasing efficiency with respect to a light absorbing ratio of said scorching artifact is direct proportion to the amount or area of said scorching artifact.
  10. 10. The method of manufacturing a light emitting unit as claimed in claim 9, wherein said optical element is a light emitting chip, said scorching artifact is formed on a light emitting surface of said light emitting chip.
  11. 11. The method of manufacturing a light emitting unit as claimed in claim 9, wherein said optical element is an encapsulant, said scorching artifact is formed on a light emitting surface of said encapsulant.
  12. 12. The method of manufacturing a light emitting unit as claimed in claim 9, wherein said optical element is a transparent optical element, said scorching artifact is formed on a surface of said transparent optical element.
  13. 13. The method of manufacturing a light emitting unit as claimed in claim 9, wherein said optical element is a light reflecting element, said scorching artifact is formed on a surface of said light reflecting element.
  14. 14. The method of manufacturing a light emitting unit as claimed in claim 8, wherein said method of performing said destruct structure comprising: setting a threshold range of luminous intensity; and forming a lumpy structure on said optical element by micro sand blasting if said measured luminous intensity of said measured light emitting device being over said threshold range of luminous intensity, wherein said energy decreasing efficiency with respect to a light scattering coefficient of said lumpy structure is direct proportion to the amount or area of said lumpy structure.
  15. 15. The method of manufacturing a light emitting unit as claimed in claim 14, wherein said optical element is a light emitting chip, said lumpy structure is formed on a light emitting surface of said light emitting chip.
  16. 16. The method of manufacturing a light emitting unit as claimed in claim 14, wherein said optical element is an encapsulant, said lumpy structure is formed on a light emitting surface of said encapsulant.
  17. 17. The method of manufacturing a light emitting unit as claimed in claim 14, wherein said optical element is a transparent optical element, said lumpy structure is formed on a surface of said transparent optical element.
  18. 18. The method of manufacturing a light emitting unit as claimed in claim 14, wherein said optical element is a light reflecting element, said lumpy structure is formed on a surface of said light reflecting element.
  19. 19. The method of manufacturing a light emitting unit as claimed in claim 8, wherein said optical element is a light emitting chip or a light transparent element or a light reflecting element.
  20. 20. A light emitting device constructed and arranged substantially as described in relation to Fig. 1 or Fig.2 or Fig.6 or Fig.7 or Fig.8 or Fig.9 of the accompanying drawings.
GB0814844A 2008-08-14 2008-08-14 Light emitting device intensity correction Withdrawn GB2462806A (en)

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GB2462806A true GB2462806A (en) 2010-02-24

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012084630A1 (en) * 2010-12-20 2012-06-28 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic component and optoelectronic component

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JPS59229502A (en) * 1983-06-13 1984-12-24 Ricoh Co Ltd Element for optical writing
US5001609A (en) * 1988-10-05 1991-03-19 Hewlett-Packard Company Nonimaging light source
US20010010449A1 (en) * 2000-02-02 2001-08-02 Chien-Chia Chiu High efficiency white light emitting diode
US20030230757A1 (en) * 2002-04-04 2003-12-18 Toyoda Gosei Co., Ltd. Light emitting diode
US20070212802A1 (en) * 2006-02-21 2007-09-13 Samsung Electro-Mechanics Co., Ltd. Method for manufacturing light emitting diode package

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59229502A (en) * 1983-06-13 1984-12-24 Ricoh Co Ltd Element for optical writing
US5001609A (en) * 1988-10-05 1991-03-19 Hewlett-Packard Company Nonimaging light source
US20010010449A1 (en) * 2000-02-02 2001-08-02 Chien-Chia Chiu High efficiency white light emitting diode
US20030230757A1 (en) * 2002-04-04 2003-12-18 Toyoda Gosei Co., Ltd. Light emitting diode
US20070212802A1 (en) * 2006-02-21 2007-09-13 Samsung Electro-Mechanics Co., Ltd. Method for manufacturing light emitting diode package

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012084630A1 (en) * 2010-12-20 2012-06-28 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic component and optoelectronic component
CN103262271A (en) * 2010-12-20 2013-08-21 欧司朗光电半导体有限公司 Method for producing optoelectronic component and optoelectronic component

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Publication number Publication date
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