GB2455054B - Method of manufacturing a finfet - Google Patents

Method of manufacturing a finfet

Info

Publication number
GB2455054B
GB2455054B GB0718983A GB0718983A GB2455054B GB 2455054 B GB2455054 B GB 2455054B GB 0718983 A GB0718983 A GB 0718983A GB 0718983 A GB0718983 A GB 0718983A GB 2455054 B GB2455054 B GB 2455054B
Authority
GB
United Kingdom
Prior art keywords
finfet
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0718983A
Other versions
GB2455054A (en
GB0718983D0 (en
Inventor
Gerben Doornbos
Bartlomiej Jan Pawlak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Priority to GB0718983A priority Critical patent/GB2455054B/en
Publication of GB0718983D0 publication Critical patent/GB0718983D0/en
Priority to PCT/IB2008/053801 priority patent/WO2009040707A2/en
Publication of GB2455054A publication Critical patent/GB2455054A/en
Application granted granted Critical
Publication of GB2455054B publication Critical patent/GB2455054B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/845—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
GB0718983A 2007-09-27 2007-09-27 Method of manufacturing a finfet Expired - Fee Related GB2455054B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0718983A GB2455054B (en) 2007-09-27 2007-09-27 Method of manufacturing a finfet
PCT/IB2008/053801 WO2009040707A2 (en) 2007-09-27 2008-09-18 Method of manufacturing a finfet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0718983A GB2455054B (en) 2007-09-27 2007-09-27 Method of manufacturing a finfet

Publications (3)

Publication Number Publication Date
GB0718983D0 GB0718983D0 (en) 2007-11-07
GB2455054A GB2455054A (en) 2009-06-03
GB2455054B true GB2455054B (en) 2011-12-07

Family

ID=38701852

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0718983A Expired - Fee Related GB2455054B (en) 2007-09-27 2007-09-27 Method of manufacturing a finfet

Country Status (2)

Country Link
GB (1) GB2455054B (en)
WO (1) WO2009040707A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013048513A1 (en) * 2011-09-30 2013-04-04 Intel Corporation Non-planar transitor fin fabrication
US9368628B2 (en) * 2012-07-05 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with high mobility and strain channel
US20140103437A1 (en) * 2012-10-15 2014-04-17 Gold Standard Simulations Ltd. Random Doping Fluctuation Resistant FinFET
US9847404B2 (en) 2013-07-06 2017-12-19 Semiwise Limited Fluctuation resistant FinFET
CN104576384A (en) * 2013-10-14 2015-04-29 中国科学院微电子研究所 FinFET structure and manufacturing method thereof
CN104733314B (en) * 2013-12-18 2018-05-01 中芯国际集成电路制造(上海)有限公司 Semiconductor structure and forming method thereof
EP3087589A4 (en) * 2013-12-27 2017-08-16 Intel Corporation Diffused tip extension transistor
WO2015127697A1 (en) * 2014-02-25 2015-09-03 Tsinghua University Method for forming fin field effect transistor
US9564518B2 (en) * 2014-09-24 2017-02-07 Qualcomm Incorporated Method and apparatus for source-drain junction formation in a FinFET with in-situ doping
JP2015213183A (en) * 2015-06-25 2015-11-26 インテル・コーポレーション Non-planar transistor fin fabrication
CN107026126B (en) 2016-02-02 2021-01-26 联华电子股份有限公司 Semiconductor element and manufacturing method thereof
US10115728B1 (en) 2017-04-27 2018-10-30 International Business Machines Corporation Laser spike annealing for solid phase epitaxy and low contact resistance in an SRAM with a shared PFET and NFET trench

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08335560A (en) * 1995-06-08 1996-12-17 Sanyo Electric Co Ltd Manufacture of semiconductor device
US6194259B1 (en) * 1997-06-27 2001-02-27 Advanced Micro Devices, Inc. Forming retrograde channel profile and shallow LLDD/S-D extensions using nitrogen implants
WO2001091169A1 (en) * 2000-05-24 2001-11-29 Infineon Technologies North America Corp. Suppression of lateral dopant diffusion from source/drain regions of mosfets
US6475887B1 (en) * 1993-09-16 2002-11-05 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device
US20050048730A1 (en) * 2003-08-30 2005-03-03 Park Jeong Ho Field effect transistors and methods for manufacturing field effect transistors
US20050186742A1 (en) * 2004-02-24 2005-08-25 Chang-Woo Oh Vertical channel fin field-effect transistors having increased source/drain contact area and methods for fabricating the same
US20060068556A1 (en) * 2004-09-27 2006-03-30 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US20070148888A1 (en) * 2005-12-09 2007-06-28 Krull Wade A System and method for the manufacture of semiconductor devices by the implantation of carbon clusters

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5885861A (en) * 1997-05-30 1999-03-23 Advanced Micro Devices, Inc. Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor
US20020011612A1 (en) * 2000-07-31 2002-01-31 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US6849528B2 (en) * 2001-12-12 2005-02-01 Texas Instruments Incorporated Fabrication of ultra shallow junctions from a solid source with fluorine implantation
US6682980B2 (en) * 2002-05-06 2004-01-27 Texas Instruments Incorporated Fabrication of abrupt ultra-shallow junctions using angled PAI and fluorine implant
JP2005086024A (en) * 2003-09-09 2005-03-31 Toshiba Corp Semiconductor device and method for manufacturing same
US7323389B2 (en) * 2005-07-27 2008-01-29 Freescale Semiconductor, Inc. Method of forming a FINFET structure

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6475887B1 (en) * 1993-09-16 2002-11-05 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device
JPH08335560A (en) * 1995-06-08 1996-12-17 Sanyo Electric Co Ltd Manufacture of semiconductor device
US6194259B1 (en) * 1997-06-27 2001-02-27 Advanced Micro Devices, Inc. Forming retrograde channel profile and shallow LLDD/S-D extensions using nitrogen implants
WO2001091169A1 (en) * 2000-05-24 2001-11-29 Infineon Technologies North America Corp. Suppression of lateral dopant diffusion from source/drain regions of mosfets
US20050048730A1 (en) * 2003-08-30 2005-03-03 Park Jeong Ho Field effect transistors and methods for manufacturing field effect transistors
US20050186742A1 (en) * 2004-02-24 2005-08-25 Chang-Woo Oh Vertical channel fin field-effect transistors having increased source/drain contact area and methods for fabricating the same
US20060068556A1 (en) * 2004-09-27 2006-03-30 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US20070148888A1 (en) * 2005-12-09 2007-06-28 Krull Wade A System and method for the manufacture of semiconductor devices by the implantation of carbon clusters

Also Published As

Publication number Publication date
GB2455054A (en) 2009-06-03
WO2009040707A3 (en) 2009-06-25
WO2009040707A2 (en) 2009-04-02
GB0718983D0 (en) 2007-11-07

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20120307