GB2441582A - Process monitoring and control - Google Patents
Process monitoring and control Download PDFInfo
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- GB2441582A GB2441582A GB0617254A GB0617254A GB2441582A GB 2441582 A GB2441582 A GB 2441582A GB 0617254 A GB0617254 A GB 0617254A GB 0617254 A GB0617254 A GB 0617254A GB 2441582 A GB2441582 A GB 2441582A
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- 238000000034 method Methods 0.000 title claims abstract description 67
- 230000008569 process Effects 0.000 title claims abstract description 64
- 238000012544 monitoring process Methods 0.000 title abstract description 6
- 230000005284 excitation Effects 0.000 claims abstract description 10
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 7
- 238000001514 detection method Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 26
- 238000001228 spectrum Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 150000002430 hydrocarbons Chemical class 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 241000894007 species Species 0.000 claims 2
- 241000237519 Bivalvia Species 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 235000020639 clam Nutrition 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052740 iodine Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052753 mercury Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052756 noble gas Inorganic materials 0.000 claims 1
- 150000002835 noble gases Chemical class 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 230000011664 signaling Effects 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 238000004381 surface treatment Methods 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 230000003595 spectral effect Effects 0.000 abstract description 8
- 230000005855 radiation Effects 0.000 abstract 3
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000012367 process mapping Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 siloxanes Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
Abstract
A sensor applicable to plasma processes (e.g. magnetron sputtering), or to non-plasma processes, in order to provide a control or monitoring signal for the process is adapted to be attached to a process environment 4 containing gas or vapour related to the process and includes means for exciting species present in the gas or vapour to produce emission of electromagnetic radiation therefrom and means for detecting the emitted radiation to provide information relating to the process, e.g. for use in feedback control of the process. The excitation means may comprise an anode 1 and a cathode 2 between which a plasma discharge 9 may be produced. Alternatively, a laser (10, figure 4) may be provided to produce the excitation e.g. by inducing fluorescence. An optical collecting device 5 directs emitted radiation to a detection device which provides information relating to the spectral content of the emitted radiation.
Description
PROCESS MONITORING AND CONTROL
TECHNICAL FIELD
This invention relates to the control of plasma and vacuum processes as for example magnetron sputtering of a material in argon (or other inert gas mixture) or inert gases plus reactive gases such as nitrogen, oxygen, hydrocarbon gases, vapours such as water, siloxanes (e.g. hexamethyldisilioxane), nebulised components such as high vapour pressure monomers mists, or other mixtures in any kind of phase (solid, liquid, gas). This invention also relates to the use of sensors for feedback plasma or non-plasma process control; feedback control systems using this type of sensor; manufacturing process and methods which use these sensors, and materials and components or have been
BACKGROUND ART
Many industrial vacuum coating applications depend on the process control of species near or in a plasma environment. One of those is the Reactive Magnetron Sputtering process for which typically an optical signal with spectroscopic information (intensity for a particular wavelength) or a voltage signal with target operation information is taken as a feedback [J. CHAPIN, C.R. CONDON, "Feedback Control for Vacuum Depositing Apparatus" US Patent 4,166,784 -4 Sep 1979]. For good process control, generally a good feedback system is required in which appropriate sensors feedback information related to the variation of the process. One of the main problems in plasma technology is the limited amount of sensors and their instability during the running of key plasma processes. This situation has forced many industrial applications to be run without feedback control as the sensors are not reliable. The present invention offers the possibility of using sensor information which is sensitive to the process requirements and is not affected by other events in the process such as plasma drift and shifting or plasma interaction with moving substrates.
The present invention also provides a simple way of upscaling the use of these sensors for large area plasma coaters such as those used in glass coating technology.
DISCLOSURE OF THE INVENTION
According to the present invention, a new type of sensor is provided that is applicable to plasma or non-plasma processes in order to provide a control or monitoring signal. Processes could be plasma processes such as reactive plasma processes or non plasma processes such as Chemical Vapour Deposition (CVD). The monitored signal could also be used for general process information or process decisions, for example the sensor could monitor outgassed components of flame or plasma treatment. As an example, the sensor could monitor the water vapour content in a vessel before the system is considered to be in a good vacuum condition. As an example, the sensor could be used as an End-Point-Detection when the process continues into shut down or goes into the following step of the process routine. The use of these sensors also enables new processes and manufacturing methods and materials with good feedback control which have not been possible to manufacture previously due to limitations in current sensor technology.
The present invention is based on a sensor which provides stable speciroscopic information (optical signal) despite process disturbances such as substrate movement and plasma drifts but which is sensitive to the total or partial pressure of gases and/or volatiles in the vacuum chamber and/or gas mixtures or volatile mixtures of inert or reactive components. As an example the sensor relevant to this invention could be used in the production of TIN using a Ti magnetron sputtering target and Argon as inert gas and Nitrogen as a reactive gas. The sensor generates an independent plasma, remote from the main plasma process. The sensor monitors signals from this remote plasma generated by different species. These species have some degree of interacting in the main plasma process. The sensor could sense via Infrared, Visible or UV emission, absorption or fluorescence signals from species activated in the remote plasma. The signal could be taken as it is, monochromated, filtered (e.g. by a narrow band pass filter), spectroscopically treated (e.g. using a CCD spectrometer), or treated by any physical or numerical manipulation which would render a value that can be "monitored" hence create a reference for the process.
In another part of the present invention, this invention also relates to a feedback control system that uses this type of sensors as a signal feedback in order to generate an adequate response or actuation on a process system.
In another part of the present invention, this invention also relates to plasma or non-plasma processes that could use this type of sensors or could use a feedback control system or apparatus which uses this kind of sensor input in order to monitor the process or to introduce changes in the process conditions or to control the process progress.
In another part of the present invention, this invention also relates to manufacturing methods in which parts, components, devices in its totality or in part have undergone a process involving the use of this type of sensors, as for example coated glass, manufactured semiconductor devices, coated tools, etc. In another part of the present invention, monitoring points could be established along a large area of process treatment which can give information on process and process mapping and could enable local actuation in different areas of the process.
This invention also relates to materials, components and devices manufactured by methods which use these sensors.
The invention will be further described by way of example only with reference to the following figures in which: Figure 1 shows a cross section of one of the embodiments of the sensor where the spectral signal is generated via fundamentally a DC voltage between electrodes. Also there could be an enhanced plasma confinement by additional means such as a
magnetic field.
Figure 2 shows a cross section of another sensor embodiment where the spectral signal is generated by an alternating or pulsed (non-DC) differential of voltage between electrodes.
Figure 3 shows a cross section of another sensor embodiment where the spectral signal is collected away from the gas flow or main vessel connection area.
Figure 4 shows a cross section another sensor embodiment where the excitation is produced by a light wave source such as a laser or pulsed laser source Figure 5 shows a spectra for sensor exited emission for 2 different levels of reactive gas concentration (Fig. 5a) and the sensor value versus the reactive gas flow input (Fig. 5b).
FIgure 6 shows a system where components are being coated or treated using plasma sources. The system could be altered via the gas composition, and source power levels.
Figure 7 shows a large section plasma source being monitored and controlled in different local areas with "local" actuators which are being commanded by a Feedback controller based on the "local" sensor information.
Referring to Figure 1, the cross section of one of the embodiments of the sensor is shown. An excitation voltage 8 is generated by a DC voltage difference between an anode 1 and a cathode 2 that will produce a plasma discharge 9. This plasma discharge could be enhanced by the presence of magnetic fields generated by magnetic means 3.
The sensor is connected to the area of gas presence 4 which would be the area of gas flow and main vessel areas. The optical signal is carried by direct observation of plasma 9 via an optical collecting device 5 to the necessary equipment for analysis such as CCD spectrometer, a Photo-Multiplier Tube (PMT) a photodiode or any optical device that will give an optical reading of the plasma. This optical reading could be optically filtered using band pass filters for example so a particular wavelength could be selected. Other methods of selecting particular wavelength information are also possible.
Referring to Figure 2, the same type of cross section of another sensor embodiment is shown where the spectral signal is generated by an excitation voltage 8 where the difference in voltage between anode 1 and cathode 2 is achieved via an alternating or pulsed (non-DC) voltage. This device could have also external discharge enhancers such as the one described in Figure 1 (component 3). this component has not been shown in this and the subsequent figures for clarity purposes only.
Referring to Figure 3, the same type of cross section of another sensor embodiment is shown where the spectral signal is a collecting device 5 that is essentially part of the sensor head itself in such way that it does not need to collect the spectral information across the main area presence 4, that is the areas of gas flow and/or main vessel.
Referring to Figure 4, the cross section of one of another embodiments of the sensor is shown. In this embodiment the excitation is produced via an electromagnetic wave 11 such as a light source, for example a laser device. The focal point of the excitation could be provided by optical elements 10. This focus would provide an excitation area 9 where the species which can respond to the wave excitation would produce a response signal. The response signal can be collected by element 5 and the signal 6 can be carried towards the appropriate instrumentation as described in Figure 1. This particular device would be suitable for fluorescent emissions and for spectral information from the Infrared (IR) and Near-infrared (NIR) region. Also other regions of signal could be used such as Visible (VIS) and Ultra-Violet (UV).
Referring to Figure 5a, an example of spectra generated in one of the sensor devices is shown (Figure 1 component 9). The present figure shows one spectrum recorded with only argon (Ar) as gas present in the system. The Ar emissions can be seen and could be individually monitored, for example emission 21 and 8lOnm. The second spectrum contains an addition of 22% of 02 and the 02 spectrum emission peak 22 at 777nm can be seen and monitored.
Referring to Figure Sb, the 02 emission peak 22 at 777nm, can be monitored by the sensor, producing a signal 24. This signal has been plotted as a function of the amount of oxygen 23. Due to the nature of the response it is possible to use this signal in order to monitor and or control the partial pressure of this gas, in this case 02.
Referring to Figure 6, a system where components 26 are being coated or treated using plasma sources 12, 13 and 14 is shown. The plasma source would generate plasma 25 which would have some reactivity with the gas that needs monitoring and/or control. A sensor as per this invention could be attached to the main vessel but also very locally to any of the plasma devices 12, 13 and 14. The feedback of these sensors is taken and analysed by the Feedback Controller which would send actuation signals into the different actuators of the process (Actuator I, Actuator 2, etc.). These actuators could act in the general vessel (as Actuator 1 of this Figure) but also could act on each individual plasma source (as Actuator 2, Actuator 3 and Actuator 4).
Variables that could be altered, as an example, could be gas input and/or the power level of each plasma source. Also sensor information could be used for the start and end of the process for end of life of one of the critical components of the process.
Referring to Figure 7, a large section plasma source 15 is shown that is monitored by different sensors (Sensor 1, Sensor 2, etc.) and controlled in different local areas 16, 17, 18, 19, 20 with "local" actuators (Actuator I, Actuator 2, etc.) which are commanded by a Feedback controller based on information from each of the "local" sensors. As an example, the plasma source 15 could be, but not exclusively, a magnetron sputtering device.
Claims (30)
1. A sensor providing spectroscopic information comprising means for attaching the unit to a process environment, comprising means of exciting a gas or vapour related to the process so that an electromagnetic emission is generated, providing collection and channelling of the emission so that the information could be used as data information or in a decision making response to the process, generating or not generating a feedback control of the process by means of actuators.
2. A sensor according to claim 1 in which the selected emission is within the infrared wavelength range of the spectrum.
3. A sensor according to claim 1 in which the selected emission is within the visible wavelength range of the spectrum.
4. A sensor according to claim 1 in which the selected emission is within the ultraviolet wavelength range of the spectrum.
5. A sensor according to claim 1 in which the selected emission is a fluorescent, non fluorescent or combination of both emissions. S. * S
* .
6. A sensor according to claim 1 in which the selected emission is a selected range of the spectrum, for example captured by a CCD spectrometer, a suitable optical *:*::* filter, photodiode, photomultiplier tube or any optically responsive means.
7. A sensor according to claim 1 in which the emission is generated mainly by an electrically driven discharge with or without magnetic enhancement, such as a penning discharge.
S.....
8. A sensor according to claim 1 in which the emission is generated mainly by an * optically driven discharge with or without magnetic enhancement, such as a laser excitation.
9. A sensor according to clams 1-8 in which the process is a plasma process such as magnetron sputtering, PACVD or others.
10. A sensor according to claims 1-8 in which the process is a non plasma process or a combination of plasma and non-plasma processes.
11. A sensor according to claims 1-10 in which the process is substantially a vacuum process.
12. A sensor according to claims 1-1 1 in which the process is a coating deposition process.
13. A sensor according to claims 1-12 in which the process is a surface treatment process.
14. A sensor according to claim 1-13 in which the process comprises several processes.
15. A sensor according to claims 1-13 in which water vapour is monitored.
16. A sensor according to claims 1-13 in which noble gases are monitored.
17. A sensor according to claims 1-13 in which reactive gases such as oxygen, nitrogen, hydrocarbon gases, amine are monitored.
18. A sensor according to claims 1-13 in which gases or vapours containing one or several of the following elements are directly or indirectly monitored: H, B, C, N, 0, Si, P. S, As, Se, Te.
19. A sensor according to claim 1-13 in which gases or vapours containing one or several of the following elements are directly or indirectly monitored: Ge, Ga, In, Ti, Pb, Bi, F, Cl, Br, I.
20. A sensor according to claim 1-13 in which gases or vapours containing one or several of the following elements are directly or indirectly monitored: Ru, Rh, Pd, Os, * Ir, Pt, Fe, Co, Ni, Cu, Ag, Au. **..
21. A sensor according to claims 1-13 in which gases or vapours containing one or **:* several of the following elements are directly or indirectly monitored: Zn, Cd, Hg.
22. A sensor according to claims 1-13 in which gases or vapours are generated from gases, liquids or solids either directly contributing to the vapour or indirectly by * : interacting in the process in such way that the concentration of the monitored species :* would be affected, either increasing it or decreasing it.
23. A sensor according to claim 1-13 in which the monitored species substantially comprises a nebulised or sprayed nature.
24. A sensor according to any of the previous claims in which the monitored signal is used as a parameter for actuation on the process as feedback control, as an end point detection or a combination of actuations.
25. A series of sensors according to any of the previous claims which are distributed along different process zones which could provide information for local actuation, global actuation or a combination of both.
26. A process which incorporates any sensor according to any of the previous claims.
27. An end point detection using a sensor or plurality of sensors as described by any of the claims 1-26 in which the signal is used for the termination or the start of a new step or signalling the end of the beginning of a particular process.
28. A magnetron sputtering process using a sensor or plurality of sensors according to any of the claims 1-26 in which the signals are used for reactive feedback control of the process on a single zone, multi-zone or on the global process environment.
29. A manufacturing method which includes any step based on any of the previous claims.
30. A manufactured component, material or device which, in any of its steps of manufacture, uses any of the means and methods described in claims 1-28. * * * *** *** S * S **SS * *S * S * * S. *
*SS.*S * * SS ** * S * S *
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0617254A GB2441582A (en) | 2006-09-01 | 2006-09-01 | Process monitoring and control |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0617254A GB2441582A (en) | 2006-09-01 | 2006-09-01 | Process monitoring and control |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0617254D0 GB0617254D0 (en) | 2006-10-11 |
| GB2441582A true GB2441582A (en) | 2008-03-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0617254A Withdrawn GB2441582A (en) | 2006-09-01 | 2006-09-01 | Process monitoring and control |
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| GB (1) | GB2441582A (en) |
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| WO2010023516A1 (en) * | 2008-08-28 | 2010-03-04 | S.O.I.Tec Silicon On Insulator Technologies | Uv absorption based monitor and control of chloride gas stream |
| WO2014009816A1 (en) | 2012-07-13 | 2014-01-16 | Uab Nova Fabrica | Assembly for use in a vacuum treatment process |
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| WO2017046787A1 (en) | 2015-09-14 | 2017-03-23 | Gencoa Ltd | Ion source sputtering |
| CN107164724A (en) * | 2017-05-11 | 2017-09-15 | 合肥京东方显示技术有限公司 | The quantity of coating machine and target particulate determines method |
| GB2559245A (en) * | 2017-01-05 | 2018-08-01 | Fairtech Corp | Device for measuring gas dissociation degrees with an optical spectrometer |
| CN109701474A (en) * | 2019-01-07 | 2019-05-03 | 福州大学 | A kind of magnetic control direct-current discharge device and method |
| WO2021052600A1 (en) * | 2019-09-20 | 2021-03-25 | Inficon ag | Vacuum-tight electrical feedthrough |
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| US8462335B2 (en) | 2007-08-27 | 2013-06-11 | Alcatel Lucent | System for analyzing a low-pressure gas by optical emission spectroscopy |
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| CN108475612A (en) * | 2015-09-14 | 2018-08-31 | 基恩科有限公司 | Ion source sputters |
| CN108475612B (en) * | 2015-09-14 | 2021-11-19 | 基恩科有限公司 | Ion source sputtering |
| GB2559245A (en) * | 2017-01-05 | 2018-08-01 | Fairtech Corp | Device for measuring gas dissociation degrees with an optical spectrometer |
| GB2559245B (en) * | 2017-01-05 | 2020-05-20 | Fairtech Corp | Device for measuring gas dissociation degrees with an optical spectrometer |
| CN107164724A (en) * | 2017-05-11 | 2017-09-15 | 合肥京东方显示技术有限公司 | The quantity of coating machine and target particulate determines method |
| CN107164724B (en) * | 2017-05-11 | 2019-04-23 | 合肥京东方显示技术有限公司 | The quantity of coating machine and target particle determines method |
| CN109701474A (en) * | 2019-01-07 | 2019-05-03 | 福州大学 | A kind of magnetic control direct-current discharge device and method |
| WO2021052600A1 (en) * | 2019-09-20 | 2021-03-25 | Inficon ag | Vacuum-tight electrical feedthrough |
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