GB2409104B - A laser - Google Patents

A laser

Info

Publication number
GB2409104B
GB2409104B GB0328416A GB0328416A GB2409104B GB 2409104 B GB2409104 B GB 2409104B GB 0328416 A GB0328416 A GB 0328416A GB 0328416 A GB0328416 A GB 0328416A GB 2409104 B GB2409104 B GB 2409104B
Authority
GB
United Kingdom
Prior art keywords
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0328416A
Other versions
GB2409104A (en
GB0328416D0 (en
Inventor
Stefano Barbieri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TeraView Ltd
Original Assignee
TeraView Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TeraView Ltd filed Critical TeraView Ltd
Priority to GB0328416A priority Critical patent/GB2409104B/en
Publication of GB0328416D0 publication Critical patent/GB0328416D0/en
Priority to PCT/GB2004/005208 priority patent/WO2005057746A1/en
Publication of GB2409104A publication Critical patent/GB2409104A/en
Application granted granted Critical
Publication of GB2409104B publication Critical patent/GB2409104B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H01S2302/02—THz - lasers, i.e. lasers with emission in the wavelength range of typically 0.1 mm to 1 mm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3422—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising type-II quantum wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
GB0328416A 2003-12-08 2003-12-08 A laser Expired - Fee Related GB2409104B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0328416A GB2409104B (en) 2003-12-08 2003-12-08 A laser
PCT/GB2004/005208 WO2005057746A1 (en) 2003-12-08 2004-12-08 A laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0328416A GB2409104B (en) 2003-12-08 2003-12-08 A laser

Publications (3)

Publication Number Publication Date
GB0328416D0 GB0328416D0 (en) 2004-01-14
GB2409104A GB2409104A (en) 2005-06-15
GB2409104B true GB2409104B (en) 2006-04-12

Family

ID=30129819

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0328416A Expired - Fee Related GB2409104B (en) 2003-12-08 2003-12-08 A laser

Country Status (2)

Country Link
GB (1) GB2409104B (en)
WO (1) WO2005057746A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5166024B2 (en) 2004-05-26 2013-03-21 ピコメトリクス、エルエルシー Terahertz imaging in reflection and transmission modes for inspection of luggage and people
CN100373724C (en) * 2005-08-31 2008-03-05 中国科学院上海微***与信息技术研究所 Indium phosphide arsenic-phosphorus-including quantum cascaded laser structure and uninterrupted growth method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0676839A1 (en) * 1994-04-04 1995-10-11 AT&T Corp. Unipolar semiconductor laser
EP0797289A2 (en) * 1996-03-23 1997-09-24 Oxford Magnet Technology Limited Improvements in or relating to resonant converters
WO2001026192A1 (en) * 1999-10-07 2001-04-12 Maxion Technologies, Inc. Parallel cascade quantum well light emitting device
US6324199B1 (en) * 1998-11-18 2001-11-27 Lucent Technologies Inc. Intersubband light source with separate electron injector and reflector/extractor
US20030219052A1 (en) * 2002-05-21 2003-11-27 University Of Massachusetts Systems and methods using phonon mediated intersubband laser

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITTO20020274A1 (en) * 2002-03-27 2003-09-29 Infm Istituto Nazionela Per La THZ LASER WITH INCORPORATING SEMICONDUCTOR WAVE GUIDE WITH CONTROLLED PLASMONIC BORDER.

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0676839A1 (en) * 1994-04-04 1995-10-11 AT&T Corp. Unipolar semiconductor laser
EP0797289A2 (en) * 1996-03-23 1997-09-24 Oxford Magnet Technology Limited Improvements in or relating to resonant converters
US6324199B1 (en) * 1998-11-18 2001-11-27 Lucent Technologies Inc. Intersubband light source with separate electron injector and reflector/extractor
WO2001026192A1 (en) * 1999-10-07 2001-04-12 Maxion Technologies, Inc. Parallel cascade quantum well light emitting device
US20030219052A1 (en) * 2002-05-21 2003-11-27 University Of Massachusetts Systems and methods using phonon mediated intersubband laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Conference on Lasers and Electro-Optics. Technical Digest. Long Beach, CA, May 19-24, 2002, Trends in Optics and Photonics, Washington, WA, Vol 73, pages 796-798, R Kohler et al, "Terahertz semiconductor-heterostructure lasers". *

Also Published As

Publication number Publication date
WO2005057746A1 (en) 2005-06-23
GB2409104A (en) 2005-06-15
GB0328416D0 (en) 2004-01-14

Similar Documents

Publication Publication Date Title
GB2410613B (en) A laser
GB0526180D0 (en) N/a
GB2412007B (en) A laser
GB2405193B (en) A light
IL165908A0 (en) A novel laser bruting machine
GB2412006B (en) A laser
EP1625160A4 (en) A bioelastomer
GB2397327B (en) A screwpile
EP1554444A4 (en) A beam
AU158398S (en) A laser head
GB2409104B (en) A laser
GB0526009D0 (en) N/a
TW584357U (en) A dial-switch
GB0316456D0 (en) A cutting aid
AU155131S (en) A laser saw
AU153201S (en) A mirror
AU153203S (en) A mirror
AU153061S (en) A mirror
AU154696S (en) A tallboy
AU154516S (en) A multisander
AU152661S (en) A bottle-carrier
AU153442S (en) A gutterguard
AU152742S (en) A photopuzzle
AU151904S (en) A gutterguard
AU153454S (en) A gutterguard

Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20111208