GB2400613B - Plasma deposition method - Google Patents

Plasma deposition method

Info

Publication number
GB2400613B
GB2400613B GB0408257A GB0408257A GB2400613B GB 2400613 B GB2400613 B GB 2400613B GB 0408257 A GB0408257 A GB 0408257A GB 0408257 A GB0408257 A GB 0408257A GB 2400613 B GB2400613 B GB 2400613B
Authority
GB
United Kingdom
Prior art keywords
deposition method
plasma deposition
plasma
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0408257A
Other versions
GB0408257D0 (en
GB2400613A (en
Inventor
Franz Laermer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of GB0408257D0 publication Critical patent/GB0408257D0/en
Publication of GB2400613A publication Critical patent/GB2400613A/en
Application granted granted Critical
Publication of GB2400613B publication Critical patent/GB2400613B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
GB0408257A 2003-04-15 2004-04-13 Plasma deposition method Expired - Fee Related GB2400613B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2003117208 DE10317208A1 (en) 2003-04-15 2003-04-15 Plasma deposition process

Publications (3)

Publication Number Publication Date
GB0408257D0 GB0408257D0 (en) 2004-05-19
GB2400613A GB2400613A (en) 2004-10-20
GB2400613B true GB2400613B (en) 2006-01-25

Family

ID=32319161

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0408257A Expired - Fee Related GB2400613B (en) 2003-04-15 2004-04-13 Plasma deposition method

Country Status (2)

Country Link
DE (1) DE10317208A1 (en)
GB (1) GB2400613B (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7842355B2 (en) 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
US9287086B2 (en) * 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9435029B2 (en) 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9287092B2 (en) 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9210790B2 (en) 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US9105447B2 (en) 2012-08-28 2015-08-11 Advanced Energy Industries, Inc. Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel
US11270871B2 (en) 2017-05-21 2022-03-08 Jiangsu Favored Nanotechnology Co., LTD Multi-layer protective coating
CN107177835B (en) * 2017-05-21 2018-06-19 江苏菲沃泰纳米科技有限公司 A kind of method for recycling big space rate pulsed discharge and preparing multi-functional nano protecting coating
US10002746B1 (en) * 2017-09-13 2018-06-19 Lam Research Corporation Multi regime plasma wafer processing to increase directionality of ions
TWI804836B (en) 2017-11-17 2023-06-11 新加坡商Aes 全球公司 Method and system for plasma processing and relevant non-transitory computer-readable medium
TWI767088B (en) 2017-11-17 2022-06-11 新加坡商Ａｅｓ全球公司 Plasma processing system, control method for modulating supplies therein and related plasma processing control system
KR20200100642A (en) 2017-11-17 2020-08-26 에이이에스 글로벌 홀딩스 피티이 리미티드 Spatial and temporal control of ion bias voltage for plasma processing
CN114222958B (en) 2019-07-12 2024-03-19 先进工程解决方案全球控股私人有限公司 Bias power supply with single controlled switch
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539098A (en) * 1984-06-22 1985-09-03 Phillips Petroleum Company Upgrading carbonaceous materials
US4837185A (en) * 1988-10-26 1989-06-06 Intel Corporation Pulsed dual radio frequency CVD process
US5041201A (en) * 1988-09-16 1991-08-20 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
EP0578010A1 (en) * 1992-06-24 1994-01-12 Texas Instruments Incorporated Multi-zone plasma processing method
US6059935A (en) * 1995-06-19 2000-05-09 The University Of Tennessee Research Corporation Discharge method and apparatus for generating plasmas
US6660656B2 (en) * 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539098A (en) * 1984-06-22 1985-09-03 Phillips Petroleum Company Upgrading carbonaceous materials
US5041201A (en) * 1988-09-16 1991-08-20 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
US4837185A (en) * 1988-10-26 1989-06-06 Intel Corporation Pulsed dual radio frequency CVD process
EP0578010A1 (en) * 1992-06-24 1994-01-12 Texas Instruments Incorporated Multi-zone plasma processing method
US6059935A (en) * 1995-06-19 2000-05-09 The University Of Tennessee Research Corporation Discharge method and apparatus for generating plasmas
US6660656B2 (en) * 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Deposition rate in modulated radio-frequency silane plasmas, Biebericher A et al, Applied Physics Letter, Vol 76 (15) pp 2002-2004, 10 April 2000 *

Also Published As

Publication number Publication date
DE10317208A1 (en) 2004-11-04
GB0408257D0 (en) 2004-05-19
GB2400613A (en) 2004-10-20

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Legal Events

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PCNP Patent ceased through non-payment of renewal fee

Effective date: 20160413