GB2387273B - Heat-treating methods and systems - Google Patents
Heat-treating methods and systemsInfo
- Publication number
- GB2387273B GB2387273B GB0312620A GB0312620A GB2387273B GB 2387273 B GB2387273 B GB 2387273B GB 0312620 A GB0312620 A GB 0312620A GB 0312620 A GB0312620 A GB 0312620A GB 2387273 B GB2387273 B GB 2387273B
- Authority
- GB
- United Kingdom
- Prior art keywords
- systems
- heat
- treating methods
- treating
- methods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/12—Heating of the reaction chamber
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
- F27D2019/0003—Monitoring the temperature or a characteristic of the charge and using it as a controlling value
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D99/00—Subject matter not provided for in other groups of this subclass
- F27D99/0001—Heating elements or systems
- F27D99/0006—Electric heating elements or system
- F27D2099/0026—Electric heating elements or system with a generator of electromagnetic radiations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/928—Front and rear surface processing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Furnace Details (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0427424A GB2406712A (en) | 2000-12-04 | 2001-12-04 | Heat-treating methods and systems |
GB0427418A GB2406710B (en) | 2000-12-04 | 2001-12-04 | Heat-treating methods and systems |
GB0427423A GB2406711B (en) | 2000-12-04 | 2001-12-04 | Heat-treating methods and systems |
GB0427414A GB2406709A (en) | 2000-12-04 | 2001-12-04 | Heat-treating methods and systems |
GB0427426A GB2406725A (en) | 2000-12-04 | 2001-12-04 | Heat-treating methods and systems |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/729,747 US6594446B2 (en) | 2000-12-04 | 2000-12-04 | Heat-treating methods and systems |
PCT/CA2001/000776 WO2002047143A1 (en) | 2000-12-04 | 2001-05-30 | Heat-treating methods and systems |
PCT/CA2001/001706 WO2002047123A1 (en) | 2000-12-04 | 2001-12-04 | Heat-treating methods and systems |
Publications (4)
Publication Number | Publication Date |
---|---|
GB0312620D0 GB0312620D0 (en) | 2003-07-09 |
GB2387273A GB2387273A (en) | 2003-10-08 |
GB2387273A8 GB2387273A8 (en) | 2004-01-08 |
GB2387273B true GB2387273B (en) | 2005-06-01 |
Family
ID=25673737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0312620A Expired - Fee Related GB2387273B (en) | 2000-12-04 | 2001-12-04 | Heat-treating methods and systems |
Country Status (4)
Country | Link |
---|---|
AU (1) | AU2002221405A1 (en) |
DE (1) | DE10197002B3 (en) |
GB (1) | GB2387273B (en) |
WO (1) | WO2002047123A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101324470B (en) | 2001-12-26 | 2011-03-30 | 加拿大马特森技术有限公司 | Temperature measurement and heat-treating methods and systems |
US9627244B2 (en) | 2002-12-20 | 2017-04-18 | Mattson Technology, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
JP4557503B2 (en) * | 2003-05-14 | 2010-10-06 | 株式会社東芝 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
US7115837B2 (en) * | 2003-07-28 | 2006-10-03 | Mattson Technology, Inc. | Selective reflectivity process chamber with customized wavelength response and method |
TWI365519B (en) * | 2003-12-19 | 2012-06-01 | Mattson Tech Canada Inc | Apparatuses and methods for suppressing thermally induced motion of a workpiece |
WO2005059991A1 (en) * | 2003-12-19 | 2005-06-30 | Mattson Technology Canada Inc. | Apparatuses and methods for suppressing thermally induced motion of a workpiece |
JP2006261695A (en) * | 2006-05-22 | 2006-09-28 | Toshiba Corp | Manufacturing method of semiconductor device |
US9070590B2 (en) | 2008-05-16 | 2015-06-30 | Mattson Technology, Inc. | Workpiece breakage prevention method and apparatus |
DE102013113866B4 (en) | 2013-12-11 | 2019-03-07 | Fhr Anlagenbau Gmbh | Arrangement for the thermal processing of substrates |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4550684A (en) * | 1983-08-11 | 1985-11-05 | Genus, Inc. | Cooled optical window for semiconductor wafer heating |
EP0399662A2 (en) * | 1989-05-01 | 1990-11-28 | AT&T Corp. | Procedure for annealing of semiconductors |
JPH02294027A (en) * | 1989-05-09 | 1990-12-05 | Sony Corp | Method and device for annealing |
US5219786A (en) * | 1991-06-12 | 1993-06-15 | Sony Corporation | Semiconductor layer annealing method using excimer laser |
EP0598409A1 (en) * | 1989-02-14 | 1994-05-25 | Seiko Epson Corporation | A method of manufacturing a semiconductor device |
WO2000067298A1 (en) * | 1999-05-03 | 2000-11-09 | Vortek Industries Ltd. | Spatially resolved temperature measurement and irradiance control |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59211221A (en) * | 1983-05-17 | 1984-11-30 | Nippon Denso Co Ltd | Heat treatment of ion implanted semiconductor |
JP2860869B2 (en) * | 1993-12-02 | 1999-02-24 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method thereof |
US5561735A (en) * | 1994-08-30 | 1996-10-01 | Vortek Industries Ltd. | Rapid thermal processing apparatus and method |
US5960158A (en) * | 1997-07-11 | 1999-09-28 | Ag Associates | Apparatus and method for filtering light in a thermal processing chamber |
-
2001
- 2001-12-04 DE DE10197002.1T patent/DE10197002B3/en not_active Expired - Fee Related
- 2001-12-04 WO PCT/CA2001/001706 patent/WO2002047123A1/en active Application Filing
- 2001-12-04 AU AU2002221405A patent/AU2002221405A1/en not_active Abandoned
- 2001-12-04 GB GB0312620A patent/GB2387273B/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4550684A (en) * | 1983-08-11 | 1985-11-05 | Genus, Inc. | Cooled optical window for semiconductor wafer heating |
EP0598409A1 (en) * | 1989-02-14 | 1994-05-25 | Seiko Epson Corporation | A method of manufacturing a semiconductor device |
EP0399662A2 (en) * | 1989-05-01 | 1990-11-28 | AT&T Corp. | Procedure for annealing of semiconductors |
JPH02294027A (en) * | 1989-05-09 | 1990-12-05 | Sony Corp | Method and device for annealing |
US5219786A (en) * | 1991-06-12 | 1993-06-15 | Sony Corporation | Semiconductor layer annealing method using excimer laser |
WO2000067298A1 (en) * | 1999-05-03 | 2000-11-09 | Vortek Industries Ltd. | Spatially resolved temperature measurement and irradiance control |
Also Published As
Publication number | Publication date |
---|---|
DE10197002B3 (en) | 2017-11-23 |
GB2387273A8 (en) | 2004-01-08 |
GB0312620D0 (en) | 2003-07-09 |
DE10197002T1 (en) | 2003-11-13 |
WO2002047123A1 (en) | 2002-06-13 |
GB2387273A (en) | 2003-10-08 |
AU2002221405A1 (en) | 2002-06-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20051204 |