GB2387268A

GB2387268A - Silicon stamped circuits

Info

Publication number: GB2387268A
Application number: GB0201569A
Authority: GB
Inventors: Darren Edward Robertson
Original assignee: Individual
Current assignee: Individual
Priority date: 2002-01-22
Filing date: 2002-01-22
Publication date: 2003-10-08
Also published as: GB0201569D0

Abstract

A silicon stamp suitable for manufacturing integrated circuits is formed from a silicon wafer having a base 3 and a layer 2 on a surface thereof, which may be silicon dioxide grown on the surface, which is etched to form stamp recesses 4. Sub-nanometre scale powder is applied to the wafer in the form of an ink 5. The wafer is pressed onto a substrate 6, and the ink on areas of the stamp surface not in the recesses is transferred onto the substrate 6. The ink may contain sub-nanoparticles of silicon suspended in a non-reactive liquid vehicle.

Description

Silicon Stamped Circuits This invention relates to the manufacture process

of integrated circuits using a silicon stamp and nanoparticle ink solution.

Current methods of creating integrated circuits requires large wafer's of silicon to be patterned many times by applying a photoresist layer which is then exposed to ultra violet light though a mask to create bare region's The i wafer is then placed into an oven for several hours where either layer's are grown on or elements are diffused though the exposed regions of the wafer to create features. The total process can take week's to create a fully tunctionai circuit. MIT Media Labs are currently working on way's to print - integrated circuits using nanoparticle silicon ink and high resolution inlet printer's though the size of the current [eature's are extremely large compared to current methods.

According to the present invention there is a stamp created from a silicon wafer using current photolythic methods. This entails growing a layer onto the silicon water, silicon dioxide is preferable but other type's of layer's could À be use, using thermal oxidation or C.V.D. (chemical vapor disposition) andiis then polished to create a flat surface. A layer of photoresist is applied and exposed to ultraviolet light, either though a mask or using a beam which is optically narrowed or widened, so exposed section's of the photoresist can be easily removed. These exposed region's can then allow the layer below be etched creating pit's. The remaining photoresist can then be removed. This stamp then has a layer of (sub)nanoparticle ink, which is a (sub)nanoparticle À powder of the substance you want in the layer suspended in a non-reactive liquid, applied to it, for example by a fine mist sprayed onto it or being rolled onto it, which is then pressed onto a substrate, for example plastic or glass, to create a print where the photoresist was not exposed to the ultraviolet light. A specific embodiment of the invention will now be described by way of À example with reference to the accompanying drawing in which: Figure shows the silicon wafer with a layer grown on top and a layer of photoresist applied Figure 2 shows the etched wafer of silicon which is the stamp used Figure 3 shows the stamp with (subnanoparticle ink applied to it Figure 4 show's the substrate being printed using the made stamp

Referring to the drawing the silicon stamp comprises a silicon base 3 and a grown layer on top 2 which is etched to create pits 4 using a photoresist layer to pattern the etching area. A layer of (sub) nanoparticle ink 5 is applied to a substrate 6.

In order to create a stamp the silicon wafer 3 first has a layer grown onto the top 2 using thermal oxidation or C.V.D (chemical vapor disposition). This top layer is then polished to create an extremely flat surface and a layer of photoresist 1 is applied to the surface as shown in figure 1. The photoresist is then exposed to ultra violet light, creating areas on the photoresist which can be easily removed. The exposed regions are then etched to create pit's 4 as shown is figure 2. The non exposed regions of photoresist are removed and a layer of (sub) nanoparticle ink 5 is applied to the wafer as shown in figure 3.

The wafer is then pressed onto a substrate 6 which leaves (subnanoparticle ink 5 on the non-exposed regions on top of the substrate 6 and the ink in the let's 4 remain on the water creating a pattern on the substrate as shown in figure 4.

Claims

I A silicon wafer patteren and used as a stamp to print (sub)nanoparticle powder in a solution onto a substrate 2 A stamp as claimed in (Jaim 1' wherein the wafer is made of another material