GB2385462A - A semiconductor laser structure - Google Patents

A semiconductor laser structure Download PDF

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Publication number
GB2385462A
GB2385462A GB0203679A GB0203679A GB2385462A GB 2385462 A GB2385462 A GB 2385462A GB 0203679 A GB0203679 A GB 0203679A GB 0203679 A GB0203679 A GB 0203679A GB 2385462 A GB2385462 A GB 2385462A
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Prior art keywords
rib
rib structure
layer
dielectric
metal contact
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GB0203679A
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GB0203679D0 (en
Inventor
Yee Loy Lam
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DenseLight Semiconductors Pte Ltd
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DenseLight Semiconductors Pte Ltd
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Publication of GB2385462A publication Critical patent/GB2385462A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H01S2301/185—Semiconductor lasers with special structural design for influencing the near- or far-field for reduction of Astigmatism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2213—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on polyimide or resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A semiconductor waveguide having a rib structure for use in a laser diode device, comprising a metal contact layer deposited over the rib structure and dielectric layer interposed between the side walls of the rib structure and the metal contact layer. The layered rib structure enhances electrical confinement in the device, while the dielectric layer serves both as a passivation layer to protect the exposed rib sidewall and as a thermal dissipation means conducting heat away from the active lasing region to the metal contact layer. In a second embodiment, a thin intrinsic InP layer is regrown on the sidewalls and base of the rib (fig. 6), which allows reduction of surface recombination leakage current.

Description

<Desc/Clms Page number 1>
A SEMICONDUCTOR LASER STRUCTURE Background to the Invention Semiconductor laser diodes are increasingly being used in the various fields of optical networking, data storage, medical and spectroscopic instruments. The laser diode is normally packaged by coupling the output power into an optical fibre.
An efficient laser diode structure will have to display good electrical carrier and optical confinement, as well as excellent thermal dissipation, together with good mode matching to the optical fibre.
As shown in Figure 1, the basic structure of an index-guided laser diode is based on a ridge, where the laser stripe is formed by the definition down to just above the active region. In this structure, the output beam is generally high divergent and has large astigmatism, with typical divergent angles of 600 and 300 in the perpendicular and parallel directions, respectively. This arises from the tight optical confinement within the active region of less than a micron in the perpendicular (vertical) direction, and the fairly weak confinement in the parallel (horizontal) direction of around two to three microns. However, this is not conductive for optical coupling with a circularly symmetric optical fibre.
Consequently, there has been much effort in shaping the output mode profile from a ridge laser structure to a circular profile for ease of coupling to the fibre.
Efforts to improve the laser diode to fibre coupling include external optical elements, such as cylindrical lenses and spot size converters to condition the beam profile to close to circular. However, being externally integrated to the laser diode, a tight optical alignment between the laser diode and the optical element, as well as the optical element to the optical fibre, is necessary. There are also laser diodes with monolithically integrated spot size converters, but that involves complex processing (including lithography and etching) to achieve the desired result.
It is also possible to reduce the output beam astigmatism by incorporating a buried waveguide structure, whereby the sides of the ridge stripe are regrowth with lattice-matched III-V semiconductor. In order to ensure proper current confinement and no short-circuiting of the diode, the buried material has to be semi-insulating, such as Fe-doped InP, or made up of complicated layer structures incorporating a pn-p-n configuration. By proper design of the refractive index profile around the active region, it is possible to obtain a much improved beam profile. In addition, the buried waveguide structure demonstrates a much improved heat dissipation capability since the semiconductor has a much higher thermal conductivity as compared to air.
<Desc/Clms Page number 2>
However, it should be noted that the regrowth involves another epitaxial growth process, which is complex, time-consuming and generally leads to lower yield of the final device.
To accommodate for efficient operation of the laser diode, the device must be bonded onto a submount for heat dissipation. Generally, the laser die is mounted with the n-side (or substrate side) down onto the submount for easy alignment of the output beam into an optical fibre. However, heat extraction is not optimal as the heat has to be transmitted across the thick substrate before reaching the conductive metal. Moreover, overhanging of the laser die out of the submount results in localized heating of the protruded region, while optical mode distortion occurs from underhanging when the facet of the laser die is not aligned to the edge of the submount and the output beam strikes and is reflected off the submount surface. On the other hand, p-side down bonding onto the submount gives excellent heat dissipation, because of the proximity of the light emitting region with the conductive metal. However, in the bonding process, the active region of the laser die experiences the high temperature of the solder metal directly, while being stressed by the different expansions and contractions of the materials involved.
Consequently, there is a strong motivation to design new laser diode device structure, which display a circular output beam profile, good heat dissipation capability and thus high output power performance.
It is known that the optical confinement of a waveguide can be enhanced by incorporating a rib structure shown in Figure 2. Here, the waveguide stripe is defined all the way down to the lower cladding past the active region. This structure has been demonstrated to allow for sharp bends, which is useful in reducing the size of passive components, such as the arrayed waveguide grating.
Summary of the Invention Here, it is proposed a modified layered rib structure for the active laser diode device, where the two regions on either side of the rib are passivated by dielectrics, such as silicon dioxide or silicon nitride, as shown in Figure 3. Since the refractive index of the dielectric layer is of the order of 1.4 to 1.9, the light is still strongly confined within the rib in the lateral direction. By proper design of the refractive index profile around the active region inside the layered rib structure, one is able to achieve a circular optical output beam with almost no astigmatism. In addition, this dielectric layer also serves as a passivation layer to protect the exposed sidewalls, especially the region of the active layers, from the ambient.
<Desc/Clms Page number 3>
The proposed layered rib structure also enhances the electrical confinement of the device. The injected current fills up the entire active region inside the rib without any spreading into the dielectric. Consequently, the efficiency of the laser diode is expected to increase, resulting in a higher optical output with the same amount of injected current. More importantly, as the dielectric layer is in direct contact with the hot lasing active region instead of air in the exposed rib, heat can be dissipated through the dielectric before reaching the metal contacts to be removed. This heat removal effect is expected to be significant, when compared to the buried waveguide structure, even though the thermal conductivity of the dielectric is not as good as the III-V compound semiconductor. This is because the heat only needs to transverse through the relatively thin layer of the dielectric of submicron thickness before being dissipated quickly through the metal contact.
The fabrication process of the described rib structure of Figure 3 is illustrated in Figure 4. Firstly, a thin layer of dielectric is deposited onto the wafer and subsequently patterned to the thin stripes by lithography and etching. The dielectric is then used as an etching mask to define the rib structure all the way down beyond the active region by dry plasma etching, such as by inductive coupled plasma (ICP) etching. The etch depth is dependent on the exact epilayer design of the structure and is typically in excess of 3 microns. Immediately after the etching process, the wafer is transferred under loadlock to the plasma-enhanced chemical vapor deposition (PECVD) chamber for the passivation dielectric coating. It is noted here that the etched sidewalls are not exposed to the ambient or other wet or dry environment as they may be damaged or contaminated in the process. After a deposition of several submicrons of dielectric, the sample is removed from the chamber. Next, a thick layer of photoresist is spun onto the sample and etched down with ICP etching in a process recipe that favours dielectric etching over that of photoresist. This etch selectivity will lead to a rounding off of the dielectric edge just next to the rib, which eases the coverage of the subsequent metal deposition over the step height of the rib device.
To facilitate heat dissipation out of the proposed layered rib structure, the metal layer shown in Figure 3 could be thicken considerably to close to 20 microns, as shown in Figure 5. This thick metal layer can be obtained via electroplating, using the thin film coating of evaporated p-contact metal as seeding layer. The thick metal layer will provide instantaneous heat extraction from the hot active region, dissipating the heat to the other cooler regions of the laser die. This configuration allows for easy heat dissipation even with n-side down mounting. This is achieved with the thick electroplated metal providing a very low thermal conductivity path for
<Desc/Clms Page number 4>
heat spreading away from the laser stripe, and in so doing, presenting a greater area of the substrate for efficient transmission of heat through the thin dielectric, the substrate, the n-side metal, and heat disposal at the submount and thermal electric cooler. In addition, the thick metal layer also aids in forming a greatly planarized surface, and optical coatings for high reflection and/or antireflection at the laser facets can be easily achieved as the laser dies can be stacked up for the coating process with ease.
Another possible configuration of the modified layered rib structure involves regrowth of a thin intrinsic undoped InP layer on the sidewalls and base of the rib, shown in Figure 6. This is expected to greatly reduce the surface recombination leakage current around the sidewalls as the epitaxial layer will remove any dangling bonds on the etched surfaces of the rib. Surface reconstruction on the undoped InP layer during the regrowth process will ensure that the surface recombination effect will be negligible on this surface. In this structure, shown in Figure 6, the depletion region extends completely into the thin undoped InP layer at around the region of the rib's pn-junction, rendering it an effective insulator between the p and n regions.
Furthermore, the high resistivity of the intrinsic InP means negligible current leakage through this thin undoped layer, and insignificant negative effects to the operation of the laser diode. Hence, the growth thickness of the intrinsic undoped InP should be thin enough for effective depletion as described above.
In the above Embodiment 2, the facets of the laser device can be defined at the same time as the rib structure formation via dry plasma etching. Subsequently, applying a thin layer of intrinsic InP on the rib sidewalls will also result in epitaxial growth of the intrinsic InP onto the laser facets. This facet coating by the intrinsic InP layer acts as a transparent window structure, reducing the possibility of facet catastrophic damage due to high output power generation in high power pump lasers. Surface reconstruction of the facet due to the undoped InP layer during the regrowth process will ensure that the surface recombination effect will be negligible on this surface, further strengthening the facet against catastrophic optical damage.
Subsequently, optical coatings for high reflection or antireflection can be deposited on top of the intrinsic InP regrowth layer on the layered rib laser structure's facets for enhancement of the output power from one of the facets.
The proposed modified layered rib structure also has a high speed operation capability if it was constructed on top of a semi-insulating substrate, as shown in Figure 7. Here, an n-inP contact layer is first grown on top of the semi-insulating substrate prior to growth of the cladding and active layers. A trench is first wetetched onto the completely grown epiwafer before the rib waveguide definition. This
<Desc/Clms Page number 5>
would allow the subsequent passivating dielectric layer to directly contact with the semi-insulating substrate for the p-contact metal. Low device capacitance is expected because of the reduced coverage of the metal-dielectric-III-V semiconductor. Besides the sidewalls, the coverage of the metal-dielectric is only confined to within a region of around 1 to 2 microns from the rib waveguide, with the p-metal contact pad spaced 10 to 20 microns away. This is a much reduced coverage, as compared to the typical 20 to 40 microns wide isolation trenches and larger contact pads, leading to a significantly lower device capacitance. Hence, it is expected the device structure shown could potentially be directly modulated to speeds above 10 Gbits/s.

Claims (8)

  1. Claims 1. A semiconductor waveguide having a rib structure, comprising a metal contact layer deposited over the rib structure and dielectric layers interposed between the side walls of the rib structure and the metal contact layer.
  2. 2. A semiconductor waveguide according to claim 1, wherein the dielectric layers comprise silicon dioxide or silicon nitride.
  3. 3. A semiconductor waveguide according to claim 1 or 2, wherein the refractive index of the dielectric layers is in a range of 1.4 to 1.9.
  4. 4. A semiconductor waveguide according to any one of claims 1 to 3, wherein the height of the metal contact layer on either side of the rib structure is greater than the rib height.
  5. 5. A semiconductor waveguide according to any one of the preceding claims, including undoped semiconductor layers interposed between the side walls and the dielectric layers.
  6. 6. A process of fabricating a semi-conductor waveguide having a rib structure comprising the step of: forming a rib structure ; depositing a dielectric coating over the rib structure; depositing a layer of photoresist exposing only the top face of the rib; etching the dielectric from the top face of the rib; and depositing a metal layer over the rib structure.
  7. 7. A process according to claim 6, comprising the step of forming an undoped semi-conductor layer on the rib side walls by epitaxial regrowth before depositing the dielectric coating.
  8. 8. A process according to claim 6 or 7, further comprising the step of electroplating on top of the metal layer.
GB0203679A 2002-02-15 2002-02-15 A semiconductor laser structure Withdrawn GB2385462A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009074149A2 (en) * 2007-12-11 2009-06-18 Lumics Gmbh Passivation of a resonator end face of a semiconductor laser with a semiconductor superlattice
CN103887705A (en) * 2014-03-13 2014-06-25 中国科学院半导体研究所 Method for manufacturing silicon-based mixing laser achieving complete metal limitation
DE102021124129A1 (en) 2021-09-17 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND OPTOELECTRONIC MODULE

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4230997A (en) * 1979-01-29 1980-10-28 Bell Telephone Laboratories, Incorporated Buried double heterostructure laser device
EP0220405A1 (en) * 1985-08-27 1987-05-06 Licentia Patent-Verwaltungs-GmbH Index-guided semiconductor laser
GB2292831A (en) * 1994-08-27 1996-03-06 Samsung Electronics Co Ltd A self-align structured laser diode
WO2001026193A1 (en) * 1999-10-01 2001-04-12 Corning Lasertron, Inc. Method for making a ridge waveguide semiconductor device
EP1154532A2 (en) * 2000-05-08 2001-11-14 Lucent Technologies Inc. Self-mode-locking quantum cascade laser
EP1170839A2 (en) * 2000-07-07 2002-01-09 Lucent Technologies Inc. Mesa geometry semiconductor light emitter having chalcogenide dielectric coating

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4230997A (en) * 1979-01-29 1980-10-28 Bell Telephone Laboratories, Incorporated Buried double heterostructure laser device
EP0220405A1 (en) * 1985-08-27 1987-05-06 Licentia Patent-Verwaltungs-GmbH Index-guided semiconductor laser
GB2292831A (en) * 1994-08-27 1996-03-06 Samsung Electronics Co Ltd A self-align structured laser diode
WO2001026193A1 (en) * 1999-10-01 2001-04-12 Corning Lasertron, Inc. Method for making a ridge waveguide semiconductor device
EP1154532A2 (en) * 2000-05-08 2001-11-14 Lucent Technologies Inc. Self-mode-locking quantum cascade laser
EP1170839A2 (en) * 2000-07-07 2002-01-09 Lucent Technologies Inc. Mesa geometry semiconductor light emitter having chalcogenide dielectric coating

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009074149A2 (en) * 2007-12-11 2009-06-18 Lumics Gmbh Passivation of a resonator end face of a semiconductor laser with a semiconductor superlattice
WO2009074149A3 (en) * 2007-12-11 2009-09-11 Lumics Gmbh Passivation of a resonator end face of a semiconductor laser with a semiconductor superlattice
CN103887705A (en) * 2014-03-13 2014-06-25 中国科学院半导体研究所 Method for manufacturing silicon-based mixing laser achieving complete metal limitation
DE102021124129A1 (en) 2021-09-17 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND OPTOELECTRONIC MODULE

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