GB2373368B - Light emitting devices - Google Patents

Light emitting devices

Info

Publication number
GB2373368B
GB2373368B GB0106038A GB0106038A GB2373368B GB 2373368 B GB2373368 B GB 2373368B GB 0106038 A GB0106038 A GB 0106038A GB 0106038 A GB0106038 A GB 0106038A GB 2373368 B GB2373368 B GB 2373368B
Authority
GB
United Kingdom
Prior art keywords
light emitting
light
conversion layer
layer
reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0106038A
Other versions
GB0106038D0 (en
GB2373368A (en
Inventor
Wang Nang Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arima Optoelectronics Corp
Original Assignee
Arima Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arima Optoelectronics Corp filed Critical Arima Optoelectronics Corp
Priority to GB0106038A priority Critical patent/GB2373368B/en
Publication of GB0106038D0 publication Critical patent/GB0106038D0/en
Publication of GB2373368A publication Critical patent/GB2373368A/en
Application granted granted Critical
Publication of GB2373368B publication Critical patent/GB2373368B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Abstract

A light emitting device provides a light emitting diode 6 comprising a light emitting layer, which produces non-white light, and a sapphire substrate interposed between the light emitting layer and a light conversion layer 5 to convert light emitted by the LED into apparently white-light. The light emitting layer may comprise GaN, InGaAs or GaAlN emitting blue or UV light, and the conversion layer may contain a scattering medium and a fluorescent material containing one or more phosphors. A reflector such as a diffuser, scatter plate, lens or mirror may be placed above or below the LED, and an optical mechanical device such as a lens array or binary optics device may be included between the conversion layer and the reflector.
GB0106038A 2001-03-12 2001-03-12 Light emitting devices Expired - Fee Related GB2373368B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0106038A GB2373368B (en) 2001-03-12 2001-03-12 Light emitting devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0106038A GB2373368B (en) 2001-03-12 2001-03-12 Light emitting devices

Publications (3)

Publication Number Publication Date
GB0106038D0 GB0106038D0 (en) 2001-05-02
GB2373368A GB2373368A (en) 2002-09-18
GB2373368B true GB2373368B (en) 2004-10-27

Family

ID=9910472

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0106038A Expired - Fee Related GB2373368B (en) 2001-03-12 2001-03-12 Light emitting devices

Country Status (1)

Country Link
GB (1) GB2373368B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8033692B2 (en) 2006-05-23 2011-10-11 Cree, Inc. Lighting device

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6686676B2 (en) * 2001-04-30 2004-02-03 General Electric Company UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same
RU2219622C1 (en) * 2002-10-25 2003-12-20 Закрытое акционерное общество "Светлана-Оптоэлектроника" Semiconductor white light source
EP1439585A1 (en) * 2003-01-17 2004-07-21 Unity Opto Technology Co., Ltd. Light emitting diode comprising a phosphor layer
US20040145289A1 (en) 2003-01-27 2004-07-29 3M Innovative Properties Company Phosphor based light sources having a non-planar short pass reflector and method of making
JP2006516828A (en) 2003-01-27 2006-07-06 スリーエム イノベイティブ プロパティズ カンパニー Phosphorescent light source element and manufacturing method
US7091653B2 (en) 2003-01-27 2006-08-15 3M Innovative Properties Company Phosphor based light sources having a non-planar long pass reflector
US20040159900A1 (en) * 2003-01-27 2004-08-19 3M Innovative Properties Company Phosphor based light sources having front illumination
US7312560B2 (en) 2003-01-27 2007-12-25 3M Innovative Properties Phosphor based light sources having a non-planar long pass reflector and method of making
US7118438B2 (en) 2003-01-27 2006-10-10 3M Innovative Properties Company Methods of making phosphor based light sources having an interference reflector
US7091661B2 (en) 2003-01-27 2006-08-15 3M Innovative Properties Company Phosphor based light sources having a reflective polarizer
US7245072B2 (en) 2003-01-27 2007-07-17 3M Innovative Properties Company Phosphor based light sources having a polymeric long pass reflector
CN100379040C (en) * 2003-01-27 2008-04-02 3M创新有限公司 Phosphor based light source having a flexible short pass reflector
US6885033B2 (en) 2003-03-10 2005-04-26 Cree, Inc. Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same
WO2004107457A2 (en) * 2003-05-30 2004-12-09 Brasscorp Limited Led inspection lamp, cluster led, and led with stabilizing agents
US7075225B2 (en) 2003-06-27 2006-07-11 Tajul Arosh Baroky White light emitting device
US6995402B2 (en) * 2003-10-03 2006-02-07 Lumileds Lighting, U.S., Llc Integrated reflector cup for a light emitting device mount
DE102004021233A1 (en) * 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh LED array
KR20070115961A (en) * 2005-02-16 2007-12-06 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Light emitting device comprising inorganic light emitting diode(s)
DE102007004302A1 (en) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Semiconductor chip for light emitting diode, has support with two support surfaces, and semiconductor layer sequence has active area for generation of radiation
US8729573B2 (en) 2007-07-26 2014-05-20 Panasonic Corporation LED lighting device
DE102009005907A1 (en) * 2009-01-23 2010-07-29 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5898185A (en) * 1997-01-24 1999-04-27 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
US5966393A (en) * 1996-12-13 1999-10-12 The Regents Of The University Of California Hybrid light-emitting sources for efficient and cost effective white lighting and for full-color applications
JP2000347601A (en) * 1999-06-02 2000-12-15 Toshiba Electronic Engineering Corp Light emitting device
WO2001024285A1 (en) * 1999-09-27 2001-04-05 Lumileds Lighting, U.S., Llc A light emitting diode device comprising a luminescent substrate that performs phosphor conversion
EP1107321A1 (en) * 1999-06-23 2001-06-13 Citizen Electronics Co., Ltd. Light emitting diode

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5966393A (en) * 1996-12-13 1999-10-12 The Regents Of The University Of California Hybrid light-emitting sources for efficient and cost effective white lighting and for full-color applications
US5898185A (en) * 1997-01-24 1999-04-27 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
JP2000347601A (en) * 1999-06-02 2000-12-15 Toshiba Electronic Engineering Corp Light emitting device
EP1107321A1 (en) * 1999-06-23 2001-06-13 Citizen Electronics Co., Ltd. Light emitting diode
WO2001024285A1 (en) * 1999-09-27 2001-04-05 Lumileds Lighting, U.S., Llc A light emitting diode device comprising a luminescent substrate that performs phosphor conversion

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8033692B2 (en) 2006-05-23 2011-10-11 Cree, Inc. Lighting device
US8529104B2 (en) 2006-05-23 2013-09-10 Cree, Inc. Lighting device

Also Published As

Publication number Publication date
GB0106038D0 (en) 2001-05-02
GB2373368A (en) 2002-09-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20060312