GB2366766B8 - Method for reactive ion etching - Google Patents

Method for reactive ion etching

Info

Publication number
GB2366766B8
GB2366766B8 GB0128508.9A GB0128508A GB2366766B8 GB 2366766 B8 GB2366766 B8 GB 2366766B8 GB 0128508 A GB0128508 A GB 0128508A GB 2366766 B8 GB2366766 B8 GB 2366766B8
Authority
GB
United Kingdom
Prior art keywords
reactive ion
ion etching
etching
reactive
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0128508.9A
Other versions
GB2366766B (en
GB2366766A8 (en
GB2366766A (en
Inventor
Isao Nakatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
National Research Institute for Metals
Original Assignee
National Research Institute for Metals
Japan Science and Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP09256635A external-priority patent/JP3131594B2/en
Priority claimed from JP09256636A external-priority patent/JP3131595B2/en
Application filed by National Research Institute for Metals, Japan Science and Technology Corp filed Critical National Research Institute for Metals
Priority claimed from GB9820639.4A external-priority patent/GB2331273B8/en
Publication of GB2366766A publication Critical patent/GB2366766A/en
Application granted granted Critical
Publication of GB2366766B publication Critical patent/GB2366766B/en
Publication of GB2366766B8 publication Critical patent/GB2366766B8/en
Publication of GB2366766A8 publication Critical patent/GB2366766A8/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/308—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices lift-off processes, e.g. ion milling, for trimming or patterning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
GB0128508.9A 1997-09-22 1998-09-22 Method for reactive ion etching Expired - Fee Related GB2366766B8 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP09256635A JP3131594B2 (en) 1997-09-22 1997-09-22 Reactive ion etching equipment
JP09256636A JP3131595B2 (en) 1997-09-22 1997-09-22 Mask for reactive ion etching
GB9820639.4A GB2331273B8 (en) 1997-09-22 1998-09-22 Method for reactive-ion etching and apparatus therefor

Publications (4)

Publication Number Publication Date
GB2366766A GB2366766A (en) 2002-03-20
GB2366766B GB2366766B (en) 2002-05-15
GB2366766B8 true GB2366766B8 (en) 2016-06-22
GB2366766A8 GB2366766A8 (en) 2016-06-22

Family

ID=27269487

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0128508.9A Expired - Fee Related GB2366766B8 (en) 1997-09-22 1998-09-22 Method for reactive ion etching

Country Status (1)

Country Link
GB (1) GB2366766B8 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2677321B2 (en) * 1995-03-15 1997-11-17 科学技術庁金属材料技術研究所長 Dry etching method

Also Published As

Publication number Publication date
GB2366766B (en) 2002-05-15
GB2366766A8 (en) 2016-06-22
GB2366766A (en) 2002-03-20

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Legal Events

Date Code Title Description
S117 Correction of errors in patents and applications (sect. 117/patents act 1977)

Free format text: REQUEST FILED; REQUEST FOR CORRECTION UNDER SECTION 117 FILED ON 18 APRIL 2016.

S117 Correction of errors in patents and applications (sect. 117/patents act 1977)

Free format text: CORRECTIONS ALLOWED; REQUEST FOR CORRECTION UNDER SECTION 117 FILED ON 18 APRIL 2016, ALLOWED ON 15 JUNE 2016.

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20160922