GB2361354B - White light emitting diode with single asymmetric quantum well in active layer - Google Patents

White light emitting diode with single asymmetric quantum well in active layer

Info

Publication number
GB2361354B
GB2361354B GB0009153A GB0009153A GB2361354B GB 2361354 B GB2361354 B GB 2361354B GB 0009153 A GB0009153 A GB 0009153A GB 0009153 A GB0009153 A GB 0009153A GB 2361354 B GB2361354 B GB 2361354B
Authority
GB
United Kingdom
Prior art keywords
light emitting
emitting diode
active layer
white light
quantum well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0009153A
Other versions
GB2361354A (en
GB0009153D0 (en
Inventor
Wang Nang Wang
Yurii Georgievich Shreter
Yurii Toomasovich Rebane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arima Optoelectronics Corp
Original Assignee
Arima Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arima Optoelectronics Corp filed Critical Arima Optoelectronics Corp
Priority to GB0009153A priority Critical patent/GB2361354B/en
Publication of GB0009153D0 publication Critical patent/GB0009153D0/en
Publication of GB2361354A publication Critical patent/GB2361354A/en
Application granted granted Critical
Publication of GB2361354B publication Critical patent/GB2361354B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
GB0009153A 2000-04-13 2000-04-13 White light emitting diode with single asymmetric quantum well in active layer Expired - Fee Related GB2361354B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0009153A GB2361354B (en) 2000-04-13 2000-04-13 White light emitting diode with single asymmetric quantum well in active layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0009153A GB2361354B (en) 2000-04-13 2000-04-13 White light emitting diode with single asymmetric quantum well in active layer

Publications (3)

Publication Number Publication Date
GB0009153D0 GB0009153D0 (en) 2000-05-31
GB2361354A GB2361354A (en) 2001-10-17
GB2361354B true GB2361354B (en) 2004-06-30

Family

ID=9889866

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0009153A Expired - Fee Related GB2361354B (en) 2000-04-13 2000-04-13 White light emitting diode with single asymmetric quantum well in active layer

Country Status (1)

Country Link
GB (1) GB2361354B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8125137B2 (en) * 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
US7564180B2 (en) 2005-01-10 2009-07-21 Cree, Inc. Light emission device and method utilizing multiple emitters and multiple phosphors
WO2008035447A1 (en) 2006-09-22 2008-03-27 Agency For Science, Technology And Research Group iii nitride white light emitting diode
DE102007058723A1 (en) * 2007-09-10 2009-03-12 Osram Opto Semiconductors Gmbh Light emitting structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0420695A2 (en) * 1989-09-29 1991-04-03 Shin-Etsu Handotai Company Limited Multiple wavelength light emitting device
US5126803A (en) * 1991-03-11 1992-06-30 The Boeing Company Broadband quantum well LED
US5864309A (en) * 1996-10-17 1999-01-26 Winbond Electronics Corp. Serial data timing base modulator
WO2000021144A2 (en) * 1998-09-16 2000-04-13 Cree Inc. VERTICAL GEOMETRY InGaN LED

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0420695A2 (en) * 1989-09-29 1991-04-03 Shin-Etsu Handotai Company Limited Multiple wavelength light emitting device
US5126803A (en) * 1991-03-11 1992-06-30 The Boeing Company Broadband quantum well LED
US5864309A (en) * 1996-10-17 1999-01-26 Winbond Electronics Corp. Serial data timing base modulator
WO2000021144A2 (en) * 1998-09-16 2000-04-13 Cree Inc. VERTICAL GEOMETRY InGaN LED

Also Published As

Publication number Publication date
GB2361354A (en) 2001-10-17
GB0009153D0 (en) 2000-05-31

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20050413