GB2356286B - Low noise semiconductor amplifier - Google Patents
Low noise semiconductor amplifierInfo
- Publication number
- GB2356286B GB2356286B GB9915855A GB9915855A GB2356286B GB 2356286 B GB2356286 B GB 2356286B GB 9915855 A GB9915855 A GB 9915855A GB 9915855 A GB9915855 A GB 9915855A GB 2356286 B GB2356286 B GB 2356286B
- Authority
- GB
- United Kingdom
- Prior art keywords
- low noise
- semiconductor amplifier
- noise semiconductor
- amplifier
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9915855A GB2356286B (en) | 1999-07-07 | 1999-07-07 | Low noise semiconductor amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9915855A GB2356286B (en) | 1999-07-07 | 1999-07-07 | Low noise semiconductor amplifier |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9915855D0 GB9915855D0 (en) | 1999-09-08 |
GB2356286A GB2356286A (en) | 2001-05-16 |
GB2356286B true GB2356286B (en) | 2002-10-23 |
Family
ID=10856774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9915855A Expired - Fee Related GB2356286B (en) | 1999-07-07 | 1999-07-07 | Low noise semiconductor amplifier |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2356286B (en) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1047378A (en) * | 1964-09-18 | |||
GB1074032A (en) * | 1963-12-13 | 1967-06-28 | Mullard Ltd | Improvements in and relating to semiconductor devices |
GB1439217A (en) * | 1972-10-25 | 1976-06-16 | Gen Electric | Semiconductor amplifying devices and circuits therefor |
US3992677A (en) * | 1974-04-30 | 1976-11-16 | Sony Corporation | Muting circuit |
EP0520482A2 (en) * | 1991-06-28 | 1992-12-30 | Texas Instruments Incorporated | Multiple layer collector structure for bipolar transistors |
WO1997027630A1 (en) * | 1994-10-07 | 1997-07-31 | National Semiconductor Corporation | Bipolar transistor having a collector region with selective doping profile and process for manufacturing the same |
US5719082A (en) * | 1995-08-25 | 1998-02-17 | Micron Technology, Inc. | Angled implant to improve high current operation of bipolar transistors |
WO1998009335A1 (en) * | 1996-08-29 | 1998-03-05 | The Whitaker Corporation | Monolithic integrated circuit including bipolar transistors having nonuniformly doped collector base junction |
-
1999
- 1999-07-07 GB GB9915855A patent/GB2356286B/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1074032A (en) * | 1963-12-13 | 1967-06-28 | Mullard Ltd | Improvements in and relating to semiconductor devices |
GB1047378A (en) * | 1964-09-18 | |||
GB1439217A (en) * | 1972-10-25 | 1976-06-16 | Gen Electric | Semiconductor amplifying devices and circuits therefor |
US3992677A (en) * | 1974-04-30 | 1976-11-16 | Sony Corporation | Muting circuit |
EP0520482A2 (en) * | 1991-06-28 | 1992-12-30 | Texas Instruments Incorporated | Multiple layer collector structure for bipolar transistors |
WO1997027630A1 (en) * | 1994-10-07 | 1997-07-31 | National Semiconductor Corporation | Bipolar transistor having a collector region with selective doping profile and process for manufacturing the same |
US5719082A (en) * | 1995-08-25 | 1998-02-17 | Micron Technology, Inc. | Angled implant to improve high current operation of bipolar transistors |
WO1998009335A1 (en) * | 1996-08-29 | 1998-03-05 | The Whitaker Corporation | Monolithic integrated circuit including bipolar transistors having nonuniformly doped collector base junction |
Also Published As
Publication number | Publication date |
---|---|
GB2356286A (en) | 2001-05-16 |
GB9915855D0 (en) | 1999-09-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20100707 |