GB2352561A - Method of fabricating a cylindrical DRAM capacitor - Google Patents
Method of fabricating a cylindrical DRAM capacitor Download PDFInfo
- Publication number
- GB2352561A GB2352561A GB0021424A GB0021424A GB2352561A GB 2352561 A GB2352561 A GB 2352561A GB 0021424 A GB0021424 A GB 0021424A GB 0021424 A GB0021424 A GB 0021424A GB 2352561 A GB2352561 A GB 2352561A
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- layer
- storage node
- insulating layer
- thickness
- moulding
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- 239000003990 capacitor Substances 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title description 4
- 238000003860 storage Methods 0.000 claims abstract description 108
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 55
- 229910052710 silicon Inorganic materials 0.000 claims description 55
- 239000010703 silicon Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 28
- 238000011049 filling Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 abstract description 58
- 238000005530 etching Methods 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 274
- 238000000034 method Methods 0.000 description 66
- 230000015572 biosynthetic process Effects 0.000 description 26
- 150000004767 nitrides Chemical class 0.000 description 20
- 238000001039 wet etching Methods 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- SYQQWGGBOQFINV-FBWHQHKGSA-N 4-[2-[(2s,8s,9s,10r,13r,14s,17r)-10,13-dimethyl-17-[(2r)-6-methylheptan-2-yl]-3-oxo-1,2,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-2-yl]ethoxy]-4-oxobutanoic acid Chemical compound C1CC2=CC(=O)[C@H](CCOC(=O)CCC(O)=O)C[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2 SYQQWGGBOQFINV-FBWHQHKGSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Abstract
The size of a cylindrical storage electrode is increased by etching back the sidewalls of the opening 112 in the moulding layer 110 in which the storage electrodes are formed. The inter-electrode spacing distance can be reduced below the design rule limit to about 10 nanometres thereby maximizing the capacitance of the device.
Description
2352561 CYLINDRICAL CAPACITOR AND A METHOD OF FABRICATION THEREOF The
present invention relates to a semiconductor device manufacturing process, and more particularly to a method for fabricating a DRAM cell capacitor that can be app licable to a high density integrated circuit device with relaxed photographic process.
As DRAM devices increase in memory cell density, there is a continuous challenge to maintain a sufficiently high storage capacitance despite decreasing cell area.
Additionally, there is a continuing goal to further decrease cell area. In order to keep a capacitance of such a storage capacitor at an acceptable value, many methods have been studied and developed. One approach is to form a high dielectric film with high dielectric constant such as BST instead of a conventional NO or ONO dielectric film. The fonnation of high dielectric film, however, is still in the state of being studied and there is a problem associated with reliability.
Alternative approach is to form a three-dimensional capacitor such as a stacked capacitor in order to increase available a surface area. Such stacked capacitors include, for example, a double-stacked, a fin stacked, a cylindrical, a spread-stacked and a box structured capacitors. Since both outer and inner surfaces can be utilized as an effective capacitor area, the cylindrical structure is favorably suitable to the three-dimensional stacked capacitor, and is more particularly suitable for an integrated memory cell such as DRAM cells.
As a reference, U.S. Pat. No. 5,3 40,765 (August 23, 1994) disclosed a method for fabricating a capacitor structure resembling cylindrical container. More complex structures, such as the container-within-container and multiple pin structures disclosed in U.S. Pat. No.
5,340,763 (August 23, 1994).
Recently, new technologies have been developed for further increasing the effective surface area by modifying the surface morphology of the polysilicon storage node itself by engraving or controlling the nucleation and growth condition of polysilicon. A hemispherical grain(HSG) silicon layer can be deposited over a storage node to increase surface area and capacitance.
One problem associated with a capacitor having HSG silicon layer is the electrical bridge between adjacent storage nodes. Further more, high density DRAM devices leave little room for the storage node of a memory cell, making it difficult to employ HSG silicon in inner surface of the cylindrical capacitor and resulting in electrical bridges between opposite HSG silicon within the cylinder, particularly with respect to the shortest direction of the cylindrical capacitor.
More specifically, in 256 DRAM of 170rim design rule, cylindrical capacitor with HSG silicon layer has a minimum feature size of 170nm in the shortest direction. At this time, HSG frame conductive layer is required to have at least 40nin and HSG has a thickness ofabout30nm. The overall thickness of the storage node having HSG silicon layer becomes about 140nm. Therefore, it is very difficult to form a dielectric film and a plate node subsequently. Since dielectric film has a thickness of about 8nm. and plate node has a thickness of about 30nm. Namely, the overall dimension of layers deposited in the cylindrical opening in the shortest direction is about 216nin that is over the design rule of 170nm. Accordingly, it is impossible to form HSG silicon layer in application to design rule of 170nm and cannot obtain a sufficient capacitance required for performance of the device.
The present invention is directed toward providing a method for fabricating a cylindrical capacitor having HSG silicon on its inner surface in a high density integrated circuit device.
A feature of the present invention is the formation of the cylindrical capacitor with HSG silicon on its inner surface in order to increase the available surface area wherein a relaxed design rule of photographic process is employed by enlarging openings for storage node formation defined by photographic process through wet etching. The distance between adjacent storage nodes can be reduced down to minimum pitch of about I Onm.
Another feature of the present invention is the formation of the contact plug that protrudes from a top surface of an insulating layer in which the contact plug is buried, in order to intensify supporting later-formed storage node.
These and other featurps.grq ployi1ded, according to the present invention, by forming a moulding layer on an integrated circuit substrate. Selected portion of moulding layer is etched to form an opening therein for a storage node through a photographic process.
Sidewalls of the opening are etched to a predetermined thickness to enlarge the opening by wet etching. A conductive layer as for the storage node is deposited in the enlarged opening and on the moulding layer, following the topology of the enlarged opening. HSG silicon nodules are formed on the conductive layer. An insulating layer is deposited on the conductive layer having HSG silicon nodules to completely fill the enlarged opening. The insulating layer and the conductive layer are planarized down to the moulding layer.
Remainder ofthe insulating layer is removed from the enlarged opening to form a cylindrical storage node. At this time, the moulding layer may also be removed. Sequentially, a dielectric -film-and a plate node are deposited thereon to form a cylindrical capacitor.
More specifically, the sidewalls of the opening(i.e., the moulding layer) are etched to a magnitude of at least such a thickness same as the conductive layer for a storage node.
The distance between adjacent openings can be shortened down to a magnitude of about 10nm.
Above mentioned-method further comprises forming a protective layer on HSG silicon nodules, before depositing the insulating layer and thus formed protective layer is removed before the deposition of the dielectric film.
Above-mentioned method further comprises, before forming the moulding layer, forming another insulating layer and forming a contact plug therein, wherein the storage node is in contact with the contact plug. The contact plug is formed by the process of etching selected portion of another insulating, depositing a conductive material and planarizing the conductive material. Further more, a partial thickness of another insulating layer outside the contact plug can be over etched to form protruding contact plug from the top surface of the etched another insulating layer. This protruding contact plug has an increase contact area with the storage node and advantageously supports the storage node.
In above mentioned method, the insulating layer may be deposited on the moulding layer to form a void in the opening.
These and other features are provided, according to the present invention, by forming a moulding layer on an integrated circuit substrate. Selected portion of moulding layer is etched to form an opening therein for a storage node through a photographic process.
Sidewalls of the opening are etched to a predetermined thickness to enlarge the opening by wet etching. A conductive layer as for the storage node is deposited in the enlarged opening and on the moulding layer, following the topology of the enlarged opening. An insulating layer is deposited on the conductive layer to completely fill the enlarged opening. The insulating layer and the conductive layer are planarized down to the moulding layer.
Remainder ofthe insulating layer is removed from the enlarged opening to form a cylindrical storage node. HSG silicon is formed on inner surface of the cylindrical storage node.
Sequentially, a dielectric film and a plate node are deposited thereon to form a cylindrical capacitor.
In above-mentioned method, the insulating layer may be deposited to cause a void formation.
These and other features are also provided, according to the present invention, by forming a first insulating layer and a first anti-reflection coating layer on an -integrated circuit substrate. The first anti-reflection coating layer and first insulating layer are etched to form a contact hole to expose the substrate. The contact hole is then filled with a conductive material to form a contact plug. A moulding layer at least over the height of the storage node is formed on the first insulating layer and on the contact plug. A second anti-reflection coating layer is deposited on the moulding layer. Selected part of the second anti-reflection coating layer and the moulding layer are etched through a photographic process to form an opening that exposes a top surface of the contact plug and the first anti- reflection coating layer. The second and first anti-reflection coating layers are removed. Sidewalls of the opening are then etched by wet etching technique to enlarge the size thereof and thereby reducing the distance between adjacent openings defined by the photographic process. A conductive layer as for the storage node is then deposited in the enlarged opening and on the moulding layer to be electrically connected to the contact. plug. HSG silicon nodules are formed on the conductive layer as for the storage node. A second insulating layer is deposited on the HSG silicon nodules and on the conductive layer to completely fill the enlarged opening. The second insulating layer, HSG nodule and conductive layer are planarized down to the moulding layer. The remainder ofthe insulating layer in the enlarged opening is selectively removed to form a cylindrical storage node having HSG nodules. At this time, the moulding layer may be also removed. Subsequently, a dielectric film and a plate node are deposited to form a cylindrical capacitor.
In the above-mentioned method, a protection layer may be formed on the HSG silicon nodules before deposition of the insulating layer.
These and other features are also provided, according to the present invention, by forming a first insulating layer at least including a nitride layer and an oxide layer on an integrated circuit substrate. The first insulating layer is etched to form a contact hold. The contact hole is then filled with a conductive material to form a contact plug. A moulding layer is deposited on the first insulating layer and on the contact plug. Selected portion of the moulding layer is etched to form an opening as for a storage node that exposes a top surface of the contact plug and the insulating layer outside thereof. Herein, a partial thickness of the first insulating layer may be etched using the nitride layer as an etching stopper, so that protrudes the contact plug. Sidewalls ofthe opening are isotropically etched to enlarge the size thereof and thereby shortening the distance between adjacent openings.
A conductive layer is then deposited in the enlarged opening and on the moulding layer to be electrically connected to the contact plug. HSG nodule is formed on the conductive layer.
A second insulating layer is deposited in remainder of the enlarged opening and on the conductive layer to cause the formation of void in the enlarged opening. The second insulating layer, HSG nodule and conductive layer are planarized down to the moulding layer.
In the above-mentioned method, the insulating layer may be deposited to form a void in the openings. That is to reduce the amounts of insulating layer which is to be removed in subsequent removal process thereof These and other features are also provided, according to the present invention, the DRAM cell capacitor comprises: a cylindrical storage node formed on the insulating layer and electrically connected to the substrate through contact plug formed in the insulating layer, the storage node having a maximum distance of about I Onm from an adjacent storage node; HSG nodule formed on the storage node; a dielectric film formed on the storage node and on the HSG nodule and on the insulating layer; and a plate node formed on the dielectric film.
These and other features are also provided, according to the present invention, the DRAM cell capacitor comprises: an insulating layer formed on an integrated circuit substrate, the insulating layer including a contact hole; a contact plug filling the contact hole and protruding upward at a predetermined thickness from a top surface of the insulating layer; a cylindrical storage node formed on the insulating layer and electrically connected to the contact plug; a dielectric filin forined on the storage node and on the insulating layer; and a plate node formed on the dielectric film; wherein the cylindrical storage node has a maximum distance of about I Onm from an ad acent storage node.
The above features and advantages of the invention will become apparent upon reference to the following detailed description of specific embodiments and the attached drawings, of which:
Figs.IA to IE are cross-sectional views of a semiconductor substrate, at selected stages of the process steps of forming a DRAM cell capacitor according to a first embodiment of the present invention; Fig.2 shows schematically a DRAM cell capacitor according to the first embodiment of the present invention; Figs.3A to 3D are cross-sectional views of a semiconductor substrate, at selected stages of the process steps of forming a DRAM, cell capacitor according to a second embodiment of the present invention; FigsAA to 4E are cross-sectional views of a semiconductor substrate, at selected stages of the process steps of forming a DRAM cell capacitor according to a third embodiment of the present invention; Figs.5A to 5E are cross-sectional views of a semiconductor substrate, at selected stages of the process steps of forming a DRAM cell capacitor according to a fourth embodiment of the present invention; Figs.6A to 6E are cross-sectional views of a semiconductor substrate, at selected stages of the process steps of forming a DRAM cell capacitor according to a fifth embodiment of the present invention; and Figs.7A to 7E are cross-sectionaI views of a semiconductor substrate, at selected stages of the process steps of forming a DRAM cell capacitor according to a sixth embodiment of the present invention.
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown.
This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. It will also be understood that when a layer is referred to as being //on n another layer or substrate, it can be directly on the other layer or substrate or intervening layers may also be present. Moreover, each embodiment described and illustrated herein includes its complementary conductivity type embodiment as well.
(Embodiment 1) Figs. I A to I E schematically show cross-sectional views ofa semiconductor substrate, at selected stages of the process steps of forming a DRAM cell capacitor according to a first embodiment of the present invention. Fig.2 shows a layout diagram of a DRAM cell capacitor of Figs. I A to 1 E.
Referring to Fig. I E schematically showing the structure of a cylindrical storage node, the cylindrical storage node 120 includes HSG silicon nodules 116 on inner surfaces of the cylinder. The storage node 120 is electrically connected to an active region of an integrated circuit substrate(not shown in drawings) through a contact plug 108 in insulating layers 1010, 102, 103 and 104. The insulating layers are made by alternating oxide layer 100 and 103 and nitride layer 102 and 104. The contact plug 108 protrudes from a top surface of the nitride layer 104. Therefore, the storage node 120, which is formed on the contact plug 108 and on the nitride layer 104 outsides of the contact plug 106, has an increased contact area with the contact plug 108, thereby reducing the contact resistance and also advantageously supports the storage node 120.
HSG silicon nodule 116 is formed on only in inner surface ofthe cylinder. Therefore, electrical bridge between adjacent storage nodes can be avoided and also the distance between adjacent storage nodes can be minimized.
Formation of above mentioned storage node 120 will be described with reference to Figs. IA to IE. The present invention relates to a method for fabricating a DRAM cell capacitor. The process for forming the field oxide layer and the transistor structure as presently practiced in manufacturing DRAM cells are only briefly described in order to better understand the current invention.
First, integrated circuit substrate(not shown in drawings) is provided. The field oxide layer is formed on the substrate to define an active and an inactive regions. Active region is the region to which electrical connection is to be made. The field oxide layer may be formed by a shallow trench isolation technique or a local oxidation of silicon technique.
Transistors are formed on predetermined regions of the substrate conventionally.
An interlayer insulating layer 100 having bit lines therein (now shown in drawings) is forined on the substrate. Though not shown, the bit line is electrically connected to a predetermined active region. Silicon nitride layer and oxide layer are formed on the interlayer insulating layer 100 in an alternate manner. Namely, first, silicon nitride layer 102 is deposited on the interlayer insulating layer 100 and then an oxide layer 103 is deposited thereon. Another silicon nitride layer 104 is then formed on the oxide layer 103 and another oxide layer 105 is formed on the another nitride layer 104. Silicon nitride layers 102 and 104 are formed to a thickness of about 30A to 500A, respectively. The silicon nitride layer 102 serves to prevent the oxidation of the bit line during oxidation process.
Contact holes 106 are opened in the alternating layers 100, 102, 103 and 104 and interlayer insulating layer 100 to expose a predetermined active region of the substrate. A conductive material is deposited to fill the contact holes 106 and then planarized to form contact plugs 108. The conductive material comprises a polysilicon, titanium nitride, titanium, tungsten, tungsten silicide and all combinations thereof This list of materials is not intended to be exhaustive and is intended to be examplary. The planarization comprises an etch back process.
An oxide layer I 10 such as PE-TEOS is then deposited on the contact plugs 108 and on the oxide layer 105 of alternating layers to a thickness that determines the height of later formed storage node. The oxide layers I 10 and 105 is used as a moulding layer I I I for storage node formation. Using photographic process of design rule of 170nin, the moulding oxide layers are selectively etched with respect to the contact plugs 108 and the nitride layer 104 and thereby forming openings 112 for storage node and protruding (see reference number 113) the contact plug 108 from a top surface of the nitride layer 104. Due to the protruding contact plug 108, the contact area with the later-formed storage node can be increased and the overlaying margin of the contact plug can be increased.
As can be seen in Fig.2, resulting opening 112 has a dimension "a"(about 170nm) measured at the shortest direction thereof same as the distance between adjacent openings.
Namely, the distance between adjacent openings is same as the distance of the opening "a" in the shortest direction. The dimension "a" is the design rule of the photographic process for storage node formation.
Referring now to Fig. I B, partial thickness of both sidewalls of the opening 112 is etched to enlarge the dimension thereof and thereby forming enlarged openings I 12a and reducing the distance between adjacent openings. The sidewalls of the opening are etched to an amount of at least same thickness as later-formed conductive layer for storage nodes through wet etching process. For example, at least about 40mn thickness of sidewalls is etched. As can be seen Fig.2, the opening size is increased from "a" to "e" and thereby decreasing the distance between adjacent openings from "a" to "c". The distance between the adjacent openings exceeding the design rule can be formed in accordance with this method, also the surface areas of the storage node can be increased due to enlarged openings.
Referring now to Fig. I C, a conductive layer 114 for storage nodes is deposited in the enlarged opening I I 2a and on the moulding layer I 11, following the topology of the enlarged opening 112a to a thickness of at least 40nm. That is a minimum thickness required for HSG silicon growth thereon. The conductive layer is made of an amorphous silicon. HSG silicon nodules 116 are then formed on the conductive layer 114 through any suitable conventional methods. After deposition of conductive layer 114 and HSG silicon nodules 116 formation, resulting opening I 12b has a size of " d " in shortest direction as can be seen in Fig.2.
A planarization oxide layer 118 such as PE-TEOS is then deposited on the conductive layer 114 and HSG silicon nodules 116 to completely fill the remainder of the opening. Such oxide layer 118 serves to protect the contamination of the HSG silicon and the conductive layer during subsequent planarization process.
For electrical insulating from adjacent storage nodes, planarization process such as CMP(chernical mechanical polishing) technique is carried out down to the moulding layer I I I and thereby forming storage nodes I 14a as shown in Fig. I D.
The planarization oxide layer 118 and moulding layer I 11 are selectively removed with respect to the nitride layer 104 to completely form storage nodes I 14a which have HSG silicon nodules 116 on inner surface thereof as can be seen in Fig. I E. The removal of the oxide layers 118 and I I I are removed by using wet chemical such as buffered oxide etchant(BOE). After that, high concentration PH3 annealing is carried out to dope the storage nodes 1 14a.
Subsequently, dielectric film and top plate are formed and thereby forming a cylindrical capacitor.
Generally, in 256 DRAM of 170nm design rule, cylindrical capacitor with HSG silicon has a minimum feature size of 170nm in shortest direction. At this time, HSG frame conductive layer has at least 40nin and HSG has a thickness of about 30mn. The overall thickness of the storage node becomes about 140mn(=2x4O+2x3O). Therefore, it is very difficult to form a dielectric film and a plate node subsequently. Since dielectric film has a thickness of about grim and plate node has a thickness of about 30nm. Namely, the overall dimension of layers deposited in the cylindrical opening in the shortest direction is about 216mn(=l40+3Ox2+8x2) that is over the design rule of 170. Accordingly, it is impossible to form HSG silicon in application to design rule of 170nin.
However, in accordance with the present invention, the opening 112 for storage node formation defined by design rule of 170run is enlarged through wet etching by a thickness of at least 40nm and more, for example, 70nm. More specifically, the opening 112 size "a " of 170nm defined by photographic process can be enlarged into size "e" of 3 10 wn by etching the sidewalls of opening 112 of about 70nm( "b"); 170mm + 70runx2=310mn.
Accordingly, there is sufficient margins for subsequent HSG frame conductive layer(about 40nm), HSG formation(about 30nm), dielectric deposition(about 8nm) and plate node -1 formation(about 30nm). About 90nin or more margins can be generated even after completing the storage node, HSG silicon, dielectric film and plate node.
At this time, the distance between adjacent openings is reduced from 170nin "a" into It It c. The distance "c" can be reduced into about l0rim, preferably 20nin to 100nm.
Accordingly, this method advantageously can be applied to a higher density integrated circuit device.
Furthermore, ifmisalignment between the opening and the contact plug, there is little problems associated with misalignment since the opening is enlarged by wet etching in accordance with the present invention.
Also, capacitance ofthe cylindrical capacitor in accordance with the present invention is increased as compared to conventional simple cylindrical capacitor without HSG silicon in a given design rule. More specifically, conventional simple cylindrical capacitor with 170mn design rule has a capacitance of about 21EF/cell(Cmin) and 25fF/cell(Cmax) with TaO dielectric, respectively and 13fF/cell(Cmin) and 15EF/cell(Cmax) in NO dielectric, respectively. On the other hand, the capacitor with HSG silicon nodules in accordance with the present invention, has about 35fF/cell(Cmin) and 42fF/cell(Cmax) in TaO dielectric, respectively and 30fF/cell(Cmin) and 35fF/cell(Cmax) in NO dielectric, respectively. The present invention provides sufficient capacitance required for reliable device performance, at least 28fF/cell.
(Embodiment 2) The second embodiment of the present invention will be described with reference to Figs.3A to 3D. In Figs.3A to 3D, same parts functioning in Figs. 1A to IE are identified with same reference numbers and their explanation is omitted. The significant difference from the first embodiment is the formation of the etching barrier layer so as to protect HSG silicon nodules during pre-cleaning process.
Referring now to Fig.3A, enlarged openings 112a are formed in the moulding layer I I I as like in the first embodiment. Conductive layer 114 as for storage nodes such as amorphous silicon layer is deposited in the enlarged openings 112a and on the moulding layer. Subsequently, HSG silicon nodules 116 are formed on the conductive layer 114. After formation of HSG silicon, the etch barrier layer 117 is formed thereon in order to protect the HSG silicon nodules during subsequent pre-cleaning process using BY and SC- I (NH3 + H202+ D.1 water) wet chemical and during removing process ofthe moulding layer I I I and planarization oxide layer 118 with wet chemical. The etch barrier layer 117 is made of a material that has etching selectivity with respect to an oxide layer. For example TiN, Ti and SiN can be selected.
Subsequently, planarization oxide layer 118 is deposited to fill the remainder of the opening as shown in Fig.3B. Planarization is then carried out(see Fig.3C) for electrical separation. Planarization oxide layer 118 and moulding layer I I I are selectively etched by wet etchant such as BOE. Due to the presence of the etching barrier layer 117, the HSG silicon is protected from wet etchant.
Prior to the formation of the dielectric film, pre-cleaning process using BF and SC I(NH3 + H202+ D.1 water) wet chemical is carried out. During this pre- cleaning process, the etching barrier layer also protect the HSG silicon nodules.
(Third embodiment) The third embodiment of the present invention will now be described with reference to Figs.4A to 4E. The final structure of the storage node is schematically illustrated in FigAE. Referring to FigAE, the storage node includes 220 includes HSG silicon nodules 218 on inner surfaces of the cylinder and on top surface thereof Each storage node 220 is embedded in the moulding layer 211 and electrically insulated from one another. The storage node 220 is electrically connected to an active region of an integrated circuit substrate(not shown in drawings) through a contact plug 208 in insulating layers 200, 202, 203 and 204. The insulating layers are made by alternating oxide layer 200 and 203 and nitride layer 202 and 204. The contact plug 208 protrudes from a top surface of the nitride layer 204 of the alternating layers. Therefore, the storage node 220, which is formed on the contact plug 208 and on the nitride layer 204 outsides, of the contact plug, has an increased contact area with the contact plug 208 and also advantageously supports the storage node 220.
Since HSG silicon nodules are formed in inner surface and top surfaceofthe cylinder and the cylindrical storage node is embedded in the moulding layer, electrical bridge between adjacent storage nodes can be inherently prevented.
Formation of above mentioned cylindrical storage node will now be described. Same process steps as the first embodiment is omitted for simplicity. Referring to FigAA, openings 212 are formed in the moulding layer 211 and protruding contact plugs 213 is formed as like in the first embodiment. Openings 212 are enlarged by wet etching as shown in Fig.413.
Referring now to FigAC, conductive layer 214 as for storage nodes is deposited in the enlarged openings 212a and on the moulding layer 211. A material layer 216 that has an etch selectivity with respect to the conductive layer 214 is deposited on the conductive layer 214 to completely fill the remainder of the opening. For example, nitride layer may be formed by PECVD technique.
Etch back process is carried out on the nitride layer 216 to expose a top surface of the conductive layer 214 outside of the openings 212a. Then, partial thickness of the exposed conductive layer 214 is selectively etched with respect to the nitride layer 216 and the moulding layer 211 for electrical separation. The remainder of the nitride layer in the openings is selectively removed by wet etching technique and thereby forming storage nodes 214a as shown in FigAD.
More specifically, the conductive layer 214 is etched by wet etching technique to at least thickness of the conductive layer, so that the top surface of storage node 214a is low in level as compared to the top surface of the moulding layer 211. That is to prevent electrical bridge between adjacent storage nodes 214a during the HSG silicon nodules formation.
HSG silicon nodules 218 is formed on the exposed storage node 214a and thereby completely forming storage nodes embedded in the moulding layer 211 as shown in FigAE.
The remaining moulding layer 211 is used as an interlayer insulating layer during the formation of metal contact hole. Subsequently, dielectric film and plate node are deposited on the resulting structure to form cylindrical capacitor. Prior to depositing the dielectric film, high concentration PH3annealing is carried out to dope the HSG silicon.
(Fourth embodiment) The fourth embodiment of the present invention will be described with reference to Figs.5A to 5E. The fourth embodiment provides a cylindrical storage node as shown in Fig.5E. Referring to Fig.5E, the storage node 320 is embedded in the moulding layer but the height of the storage node 320 is high in level than the moulding layer 3 11. HSG silicon 316 is formed only in inner surface of the cylindrical storage node. The storage nodes 320 are electrically connected to the contact plugs 308.
The formation of above mentioned storage node 320 will now be described. The same process steps as the first and third embodiments is omitted for simplicity. Referring to Fig.5A, openings 3 12 for storage nodes are formed in the moulding layer 3 11 to expose the contact plugs 308. Wet etching is carried out to enlarge the openings as shown in Fig.5B. Conductive layer 314 is then deposited in the enlarged openings 3 12a and on the moulding layer 311. HSG silicon nodules 316 are formed on the conductive layer 314.
Planarization oxide layer 318 such as PE-TEOS is then deposited in the remainder of the opening. The deposition of the oxide layer 318 is carefully controlled to form voids 319 therein in the openings as shown in Fig.5C. That is to decrease amounts of the oxide layer to be etched during subsequent etching process.
Planarization process such as CNIP is carried out down to the top surface of the moulding layer 311. The remainder of the oxide layer 318 in the openings is etched by wet etching to form storage nodes 320 as show in Fig.5E. During this step of wet etching the oxide layer 318, a partial thickness ofthe moulding layer 3 11 is etched concurrently, thereby reducing the height thereof. Since the remaining moulding layer 311 is used as the interlayer insulating layer for metal contact formation, the aspect ratio of contact can be reduced.
Subsequently, dielectric film and plate node are formed on the resulting structure and thereby forming capacitor. Prior to the formation of the dielectric film, high concentration PH3annealing is carried out to dope the HSG silicon.
(Fifth embodiment) Fifth embodiment of the present invention will now be described with reference to Figs.6A to 6E. Referring now to Fig.6A, an insulating layer 400, a silicon nitride layer 402, an oxide layer 403 and a first anti-reflective coating layer 404 are sequentially formed on an integrated circuit substrate(not shown in the drawings). Though not shown, bit lines are already formed in the insulating layer 400. The nitride layer 402 serves to prevent oxidation of the bit lines and may have a thickness of about 50A to I OOA. For example, the nitride layer 402 is formed to a thickness of about 70A. The oxide layer 403 is made of PT-TEOS oxide layer and has a thickness of about 500A. The first anti-reflection layer 404 is made of silicon oxynitride layer(SiON) and may have a thickness of about I OOA to 1,000A. For example, the anti-reflection layer 404 is formed to a thickness of about 260A.
Contact holes 406 are opened in the first anti-reflection layer 404, oxide layer 403, nitride layer 402 and interlayer insulating layer 400. The contact holes 406 are filled with a conductive material such as TiN, Ti, W, WSix and combination thereof After that planarization. process such as etch back is carried out to form contact plugs 408.
A moulding layer 410 is deposited on the first anti-reflection layer 404 and on the contact plugs 408 to a thickness over desired height of the storage nodes. For example, the moulding layer 4 10 is made of PE-TEOS oxide layer and has a thickness of about 9,OOOA.
A second anti-reflection layer 411 is formed on the moulding layer 4 10. The second anti reflection layer 411 is made of SiON and may have a thickness of about I OOA to ipok For example, the second anti-reflection layer 411 is formed to a thickness of about 260A.
A mask pattern 412 such as photoresist pattern of 170nm design rule is formed on the second anti-reflection layer 411. Using the mask pattern 412, the second anti-reflection layer 411 and the moulding oxide layer 410 are etched down to the first anti-reflection layer 404 and thereby forming openings 413 for storage nodes formation. After removing the mask pattern 412 through conventional ashing and stripping process, the second anti reflection layer 411 is removed. Also exposed first anti-reflection layer 404 is removed concurrently and exposing underlying oxide layer 430.
Partial thickness of both sidewalls of the opening 413 is etched to enlarge the dimension thereof and thereby forming enlarged openings 413a. The sidewalls of the opening are etched to amount at least same thickness as later-formed conductive layer for storage nodes through wet etching process. Therefore, the distance between the adjacent openings defined by the mask pattern can be reduced. Namely, fine pitch exceeding the design rule can be obtained. The distance between the adjacent openings can be reduced down to about I Orim.
Referring now to Fig.6C, a conductive layer 414 for storage node formation is deposited to a thickness of about 500A. HSG silicon nodules 416 are then formed on the conductive layer 414 to a thickness of about 300A or more. A planarization oxide layer 418 such as PEJEOS is deposited to completely fill the remainder of the openings, for example, to a thickness of 200nm or more.
Planarization process such as CNIP is carried out down to the top surface of the moulding oxide layer 410 to electrical separation of each storage nodes, as shown in Fig.6D.
Remaining oxide layers 418 and 4 10 in the openings and outside openings are selectively etched with respect the nitride layer 404 and thereby to form storage nodes 414a having HSG silicon nodules 416 on inner surface thereof. After high concentration PH3 annealing for doping the HSG silicon, dielectric film 420 and plate node 422 are formed on the resulting structure to form capacitors 430. The dielectric film 420 is made of NO layer to a thickness of about 8nm to I Onm and the plate node 422 is formed to a thickness of about 135nm.
As like in the second embodiment, prior to the formation of the planarization oxide layer 418, etching barrier layer(not shown) may be further formed on the HSG silicon to protect thereof during cleaning process.
(Sixth embodiment) The sixth embodiment of the present invention will be described with reference to Figs.7A to 7E. An interlayer insulating layer 500, a silicon nitride layer 502 and a first anti reflection layer 503 are sequentially formed on an integrated circuit substrate(not shown in the drawings). Though not shown in drawings, bit lines are formed in the interlayer insulating layer 500. The silicon nitride layer 502 is formed by PECVD technique and has a thickness of about 30nm to I 00nm, preferably 100nm. The silicon nitride is provided to protect the bit line from oxidation process. The first anti-reflection layer 503 is made of SiON and may have a thickness of about l0nm to 100nm. For example, the first anti reflection layer 503 is formed to a thickness of about 26nm.
Contact holes 504 are formed in the insulating layers 500, 502 and 503 by conventional photo-etching process. Conducive material comprises TiN, Ti, W, WSi, and all combinations thereof. After that planarization process such as etch back is carried out to form contact plugs 506.
An oxide layer 508 as a moulding layer for storage nodes is deposited on the contact plugs 506 and the first anti-reflection layer 503 to a thickness over the height of desired storage nodes. For example, PE-TEOS oxide layer may be formed to a thickness of about 1 o,oook A second anti-reflection layer 509 is formed on the moulding layer 508. The second anti-reflection layer 5 09 is made of SiON and may have a thickness in the range of I Onm to I 00nm. For example, the second anti-reflection layer 509 has a thickness of about 26nm.
Using a mask pattern 5 10, the second anti-reflection layer 509 and the moulding layer 508 are etched to form openings 512 that expose the first anti-reflection layer 503.
Partial thickness of both sidewalls of the opening 512 is etched to enlarge the dimension thereof and thereby forming enlarged openings 512a as shown in Fig.7B. The sidewalls of the opening are etched to amount at least same thickness as later-formed conductive layer for storage nodes through wet etching process. Therefore, the distance between the adjacent openings defined by the mask pattern can be reduced. Namely, fine pitch exceeding the design rule can be obtained. The distance between the adjacent openings can be reduced down to about 10nm.
Referring now to Fig.7C, a conductive layer 514 for storage node formation is deposited to a thickness of about 400A to 500A. The conductive layer 514 is made of an amorphous silicon. HSG silicon nodules 516 are then formed on the conductive layer 514 to a thickness of about 300A or more. A planarization oxide layer 518 such as PE-TEOS is deposited to completely fill the remainder of the openings, for example, to a thickness of 200nm or more. The deposition of the oxide layer 518 is carefully controlled to form voids 519 therein in the openings as shown in Fig.7C. That is to decrease amounts of the oxide layer to be etched.
Planarization process such as CNIP is carried out down to the top surface of the moulding layer 508 as shown in Fig.7D. The remainder of the oxide layer 518 in the openings is removed to form storage nodes. During this step of removing the oxide layer 518, a partial thickness of the moulding layer 508 is etched concurrently, thereby reducing the height thereof. Since the remaining moulding layer is used as the interlayer insulating layer for metal contact formation, the aspect ratio of contact can be reduced.
Subsequently, dielectric film 520 and plate node 522 are formed on the resulting structure and thereby forming capacitor 530 as shown in Fig.7E. Prior to the forTnation of the dielectric film, high concentration PH3 annealing is carried out to dope the HSG silicon.
The dielectric fihn is made of NO layer to a thickness of about 8nm to I Orun. The plate node 522 is made of polysilicon to a thickness of about 135nm.
Claims (5)
- CLAIMS:A DRAM cell capacitor comprising: an insulating layer formed on an integrated circuit substrate; a cylindrical storage node formed on said insulating layer and electrically connected to said substrate through contact plug formed in said insulating layer, said storage node having a maximum distance of about I Onm from an ad acent storage node; HSG silicon nodules formed on said storage node; a dielectric film formed on said storage node and on said HSG silicon nodules and on said insulating layer; and a plate node formed on said dielectric film.
- 2. A DRAM cell capacitor according to claim 1, wherein said HSG silicon nodules is formed on inner surface of said cylindrical storage node.
- 3. A DR" cell capacitor according to claim 1, wherein said HSG silicon nodules is formed on inner surface and on top surface of said cylindrical storage node.
- 4. A DRAM cell capacitor according to claim 1 ftirther comprising another insulating layer surrounding said cylindrical storage node, wherein said dielectric film is formed on said inner and top surface of said storage node and on said another insulating layer.
- 5. A DRAM cell capacitor comprising:an insulating layer formed on an integrated circuit substrate, said insulating layer including a contact hole; a contact plug filling said contact hole and protruding upward at a predetermined thickness from a top surface of said insulating layer; a cylindrical storage node formed on said insulating layer and electrically connected to said contact plug; a dielectric film formed on said storage node and on said insulating layer; and a plate node formed on said dielectric film; wherein said cylindrical storage node has a maximum distance of about 10nm from an adjacent storage node.21
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980028822A KR100292938B1 (en) | 1998-07-16 | 1998-07-16 | Highly integrated DRAM cell capacitors and their manufacturing method |
| GB9912457A GB2339962B (en) | 1998-07-16 | 1999-05-27 | Cylindrical capacitor and a method of fabrication thereof |
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| Publication Number | Publication Date |
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| GB0021424D0 GB0021424D0 (en) | 2000-10-18 |
| GB2352561A true GB2352561A (en) | 2001-01-31 |
| GB2352561B GB2352561B (en) | 2003-02-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0021424A Expired - Fee Related GB2352561B (en) | 1998-07-16 | 1999-05-27 | DRAM cell capacitor |
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| GB (1) | GB2352561B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5491103A (en) * | 1993-04-08 | 1996-02-13 | Samsung Electronics Co., Ltd. | Method for manufacturing a capacitor structure of a semiconductor memory device |
| WO1997032342A1 (en) * | 1996-03-01 | 1997-09-04 | Ace Memory, Inc. | High capacity stacked dram device and process |
| US5714779A (en) * | 1992-06-30 | 1998-02-03 | Siemens Aktiengesellschaft | Semiconductor memory device having a transistor, a bit line, a word line and a stacked capacitor |
| US5770500A (en) * | 1996-11-15 | 1998-06-23 | Micron Technology, Inc. | Process for improving roughness of conductive layer |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5401681A (en) * | 1993-02-12 | 1995-03-28 | Micron Technology, Inc. | Method of forming a bit line over capacitor array of memory cells |
| US5597756A (en) * | 1995-06-21 | 1997-01-28 | Micron Technology, Inc. | Process for fabricating a cup-shaped DRAM capacitor using a multi-layer partly-sacrificial stack |
| US5756388A (en) * | 1997-06-24 | 1998-05-26 | Powerchip Semiconductor Corp. | Method for fabricating a rake-shaped capacitor |
| KR100301370B1 (en) * | 1998-04-29 | 2001-10-27 | 윤종용 | Method for manufacturing dram cell capacitor |
-
1999
- 1999-05-27 GB GB0021424A patent/GB2352561B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5714779A (en) * | 1992-06-30 | 1998-02-03 | Siemens Aktiengesellschaft | Semiconductor memory device having a transistor, a bit line, a word line and a stacked capacitor |
| US5491103A (en) * | 1993-04-08 | 1996-02-13 | Samsung Electronics Co., Ltd. | Method for manufacturing a capacitor structure of a semiconductor memory device |
| WO1997032342A1 (en) * | 1996-03-01 | 1997-09-04 | Ace Memory, Inc. | High capacity stacked dram device and process |
| US5770500A (en) * | 1996-11-15 | 1998-06-23 | Micron Technology, Inc. | Process for improving roughness of conductive layer |
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| Publication number | Publication date |
|---|---|
| GB0021424D0 (en) | 2000-10-18 |
| GB2352561B (en) | 2003-02-19 |
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| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20090527 |