GB2352084B - Forming contacts on semiconductor substrates for radiation detectors and imaging devices - Google Patents
Forming contacts on semiconductor substrates for radiation detectors and imaging devicesInfo
- Publication number
- GB2352084B GB2352084B GB9916404A GB9916404A GB2352084B GB 2352084 B GB2352084 B GB 2352084B GB 9916404 A GB9916404 A GB 9916404A GB 9916404 A GB9916404 A GB 9916404A GB 2352084 B GB2352084 B GB 2352084B
- Authority
- GB
- United Kingdom
- Prior art keywords
- imaging devices
- semiconductor substrates
- radiation detectors
- forming contacts
- contacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14696—The active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
Landscapes
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9916404A GB2352084B (en) | 1999-07-13 | 1999-07-13 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
US09/362,195 US6410922B1 (en) | 1995-11-29 | 1999-07-28 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
AU66886/00A AU6688600A (en) | 1999-07-13 | 2000-06-28 | Forming contacts on semiconductor substrates for radiation detectors and imagingdevices |
PCT/EP2000/006014 WO2001004962A2 (fr) | 1999-07-13 | 2000-06-28 | Formation de contacts sur des substrats a semiconducteur pour detection de radiations et dispositifs d'imagerie |
US10/176,637 US20020158207A1 (en) | 1996-11-26 | 2002-06-24 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
US10/393,767 US20030183770A1 (en) | 1996-11-26 | 2003-03-19 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9916404A GB2352084B (en) | 1999-07-13 | 1999-07-13 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9916404D0 GB9916404D0 (en) | 1999-09-15 |
GB2352084A GB2352084A (en) | 2001-01-17 |
GB2352084B true GB2352084B (en) | 2002-11-13 |
Family
ID=10857160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9916404A Expired - Fee Related GB2352084B (en) | 1995-11-29 | 1999-07-13 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU6688600A (fr) |
GB (1) | GB2352084B (fr) |
WO (1) | WO2001004962A2 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2639302T3 (es) | 2014-08-07 | 2017-10-26 | Telene Sas | Composición curable y artículo moldeado que comprende la composición |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2027556A (en) * | 1978-07-31 | 1980-02-20 | Philips Electronic Associated | Manufacturing infra-red detectors |
EP0182977A1 (fr) * | 1984-10-29 | 1986-06-04 | International Business Machines Corporation | Procédé de fabrication d'appuis pour des couches de métallisation interconnectées à différents niveaux d'une puce semi-conductrice |
EP0200082A2 (fr) * | 1985-04-30 | 1986-11-05 | International Business Machines Corporation | Procédé de décollage sans couche de barrière à haute température pour la formation d'une couche d'interconnection configurée |
EP0278408A2 (fr) * | 1987-02-06 | 1988-08-17 | Siemens Aktiengesellschaft | Combinaison monolithique intégrée d'un guide d'ondes et d'une photodiode |
GB2205684A (en) * | 1987-05-08 | 1988-12-14 | Mitsubishi Electric Corp | Lift-off method of fabricating electrodes for semiconductor devices |
JPH0832101A (ja) * | 1994-07-15 | 1996-02-02 | Toshiba Corp | HgCdTe半導体装置およびその製造方法 |
GB2307785A (en) * | 1995-11-29 | 1997-06-04 | Simage Oy | Forming contacts on semiconductor substrates radiation detectors and imaging devices |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02232978A (ja) * | 1989-03-07 | 1990-09-14 | Matsushita Electric Ind Co Ltd | 半導体放射線検出器及びその製造方法 |
EP0415541B1 (fr) * | 1989-07-29 | 1994-10-05 | Shimadzu Corporation | Détecteur d'image radiative à base de semi-conducteur et sa méthode de fabrication |
JPH08321486A (ja) * | 1995-05-24 | 1996-12-03 | Sony Corp | 金属膜のパターン形成方法 |
-
1999
- 1999-07-13 GB GB9916404A patent/GB2352084B/en not_active Expired - Fee Related
-
2000
- 2000-06-28 AU AU66886/00A patent/AU6688600A/en not_active Abandoned
- 2000-06-28 WO PCT/EP2000/006014 patent/WO2001004962A2/fr active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2027556A (en) * | 1978-07-31 | 1980-02-20 | Philips Electronic Associated | Manufacturing infra-red detectors |
EP0182977A1 (fr) * | 1984-10-29 | 1986-06-04 | International Business Machines Corporation | Procédé de fabrication d'appuis pour des couches de métallisation interconnectées à différents niveaux d'une puce semi-conductrice |
EP0200082A2 (fr) * | 1985-04-30 | 1986-11-05 | International Business Machines Corporation | Procédé de décollage sans couche de barrière à haute température pour la formation d'une couche d'interconnection configurée |
EP0278408A2 (fr) * | 1987-02-06 | 1988-08-17 | Siemens Aktiengesellschaft | Combinaison monolithique intégrée d'un guide d'ondes et d'une photodiode |
GB2205684A (en) * | 1987-05-08 | 1988-12-14 | Mitsubishi Electric Corp | Lift-off method of fabricating electrodes for semiconductor devices |
JPH0832101A (ja) * | 1994-07-15 | 1996-02-02 | Toshiba Corp | HgCdTe半導体装置およびその製造方法 |
GB2307785A (en) * | 1995-11-29 | 1997-06-04 | Simage Oy | Forming contacts on semiconductor substrates radiation detectors and imaging devices |
Also Published As
Publication number | Publication date |
---|---|
WO2001004962A3 (fr) | 2001-06-28 |
WO2001004962A2 (fr) | 2001-01-18 |
GB9916404D0 (en) | 1999-09-15 |
GB2352084A (en) | 2001-01-17 |
AU6688600A (en) | 2001-01-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20030713 |