GB2332302A - Etching polysilicon films - Google Patents
Etching polysilicon films Download PDFInfo
- Publication number
- GB2332302A GB2332302A GB9817395A GB9817395A GB2332302A GB 2332302 A GB2332302 A GB 2332302A GB 9817395 A GB9817395 A GB 9817395A GB 9817395 A GB9817395 A GB 9817395A GB 2332302 A GB2332302 A GB 2332302A
- Authority
- GB
- United Kingdom
- Prior art keywords
- polysilicon
- process chamber
- gas
- etch
- etching method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 50
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 50
- 238000005530 etching Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 80
- 239000007789 gas Substances 0.000 claims abstract description 75
- 230000008569 process Effects 0.000 claims abstract description 57
- 239000012159 carrier gas Substances 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 230000000737 periodic effect Effects 0.000 claims description 12
- 150000002366 halogen compounds Chemical class 0.000 claims description 10
- 238000009835 boiling Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- -1 aluminum compound Chemical class 0.000 claims description 3
- 229910014263 BrF3 Inorganic materials 0.000 claims description 2
- FQFKTKUFHWNTBN-UHFFFAOYSA-N trifluoro-$l^{3}-bromane Chemical compound FBr(F)F FQFKTKUFHWNTBN-UHFFFAOYSA-N 0.000 claims description 2
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910020323 ClF3 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
A method for etching polysilicon comprises the steps of: a) supplying a wafer 22 having a polysilicon film into a process chamber 18; b) adjusting the pressure and the temperature of the process chamber within predetermined ranges; and c) supplying an etch gas including NF 3 or inter-halogen compounds into the process chamber to etch the polysilicon film. The etching apparatus comprises: an etch gas supply source 10 for supplying etch gas comprising NF 3 or inter-halogen compounds such as CLF 3 , BrF 5 , IF 3 , CLF, BrF 3 , IF 5 and BrF, a heating block 16 for controlling the temperature of the process chamber and a high vacuum pump 24 for controlling the pressure in the process chamber. The etch gas is mixed with a carrier gas such as N 2 or Ar from a source 12 and supplied via a diffuser 14 to the process chamber.
Description
2332302 POLYSILICON ETCHING MITHOD AND ETCHING APPARATUS
Field of the Invention
The present invention relates to an etching method of polysilicon and its etching method, and more particularly, to a method for isotropic-etching a polysilicon film formed on a specific layer without the generation of plasma, and its etching apparatus.
Description of the Related Art is With the development of the semiconductor industries, and high- integration, high-capacitance, and high-performance of semiconductor devices, it requires the concentration of the increased number of devices on a limited area.
Accordingly, the wafering technology is more developed such that the pattern can be manufactured less than Am, and a dry-etch technology is commonly used in the wafer fabrication process in order to make highlyintegrated and highly-sophisticated semiconductor devices. Commonlyused dry-etch technology employs plasma.
The dry-etch method using plasma is very important and difficult technology. The important elements which 1 1 should be considered in the plasma etch process are an etch profile, selectivity for sub-layers, etch rate, and uniformity, etc. These are mostly affected by etch apparatus, or the properties of supply gases.
When etching a layer of a silicon-bearing material by the plasma dry-etch, halogen compound containing fluorine (F) and chlorine (Cl) is supplied as etch gas. In addition, other kinds of gases can be added to the above etch gas and supplied for the improvement of the etch profile of the layer properties, and the selectivity or as carrier gas.
Each of the mixed gases does its own function, that is, the inert gases having a high mass such as helium (He), Argon (Ar) help to carry the etch gas as carrier gas, and etches the layers by physical sputtering.
o The plasma dry etch method is divided according t the types of the plasma formation, into an Inductively Coupled Plasma (ICP) type, wherein plasma is formed magnetically by high voltage-applied coils around a quartz tube for the plasma etch process; and a Capacitively Coupled Plasma (CCP) type, wherein plasma is formed using high-frequency signal applied anode electrode and cathode electrode. However, the CCP type and the ICP type need supplementary devices such as plasma source power, phase matcher, bias power, etc. such that element, radical, ions, etc. are present together with plasma state from the supplied reaction gases.
2 Therefore, it is necessary to develop a new method to carry out dry-etch process using reaction gas without the generation of plasma.
Summary of the Invention
The present invention is directed to provide a polysilicon etching method and an etching apparatus therefor for isotropic-etching a polysilicon film by the process environment inside a process chamber in which a process gas is supplied, such as the inner pressure, temperature.
To achieve these and other advantages and in accordance with the purpose of the present invention, an etching method for polysilicon comprises the steps of: a) supplying a wafer having a polysilicon film on a certain layer into a process chamber; b) adjusting the pressure and the temperature of the process chamber within predetermined ranges; and c) supplying an etch gas including halogen compounds into the process chamber and etching the polysilicon film.
The certain layer may be an oxide film.
The pressure inside the process chamber is in the range of from 0.5 to 3 Torr, and the temperature of the process chamber is above a boiling point of the etch gas below 800 OC.
The etch gas comprising halogen compounds is formed 3 by the combination of different kinds of periodic elements in the periodic table.
The etch gas may be a gas selected from ClF,, BrF., IF3 / C1F, BrF,, IF,, and BrF gases.
In addition, the etch gas may be NF,.
A carrier gas is supplied into the process chamber, and the carrier gas is preferably N2 gas or Ar gas.
to 1000 SCCM of etch gas and 300 to 4000 SCCM of carrier gas are supplied into the process chamber.
In another aspect of the present invention, an etching apparatus for polysilicon according to the present invention comprises: an etch gas supply source for supplying etch gas comprising halogen compounds formed by the combination of different periodic elements is in the periodic table or NF3 gas; a process chamber connected to the etch gas supply source and having a temperature control means; and a high vacuum line connected to the process chamber for controlling the pressure state of the process chamber.
A carrier gas supply source for supplying a carrier gas is connected to the process chamber.
In addition, the etch gas supply source and the carrier gas supply source are connected with a diffuser, and the diffuser and the procesi chamber are connected.
The temperature control means may be a heating block provided outside the process chamber.
n addition, a hot coil or a lamp may be provided 4 1 inside the heating block.
In addition, a dry pump is connected to the high vacuum line.
The inside wall of the process chamber may be formed with aluminum compound in order to prevent the inner wall of the process chamber from being etched by etch gas.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed,
Brief Description of the Drawinqs is In the accompanying drawings:
Fig. 1 is a representation showing one embodiment of the polysilicon etch apparatus according to the present invention; Fig. 2 is a cross-sectional view showing one embodiment of the polysilicon etch method according to the present invention; and Fig. 3 is a graphical representation showing the polysilicon etch method of the Fig. 2 according to the present invention.
Detailed Descrigtion of the Preferred Embodiments Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.
As shown in Fig. 1, the polysilicon etching apparatus of the present invention comprises an etch gas supply source 10 for supplying halogen compound gas formed by the ion combination of the different kinds of elements in the periodic table and having low combination energy, and a NF, gas having a low boiling point, and a high reactivity at about 63 kcal/mol, the combination energy between N-F.
As etch gas, C12 gas, halogen compound gas having a high combination energy formed by the covalent bond of the same periodic elements in the periodic table is excluded.
In other words, halogen gas such as ClF3, BrF., I.F3, ClF, BrF,, IF., and BrF having a low combination energy formed by the ion-bond can be used. Especially, the 3 OC, and boiling melting point of the ClF is about -76.3 point is about 11.7 OC. At room temperature (about 18 OC), it shows a low vapour pressure, and the bond energy between Cl-F is 61.4 kcal/mol,which is unstable because of the low bond energy compared with the other etch gas such as CF4.
In addition, a carrier gas supply source 12 for supplying a carrier gas for carrying the etch gas such as N2 or Ar gas.
6 1 is In addition, a diffuser 14 is installed in the etch gas supply source 10 and the carrier gas supply source 12 for mixing the supplied gases easily respectively.
In addition, the diffuser 14 is connected to the process chamber 18 having a boat 20 with loaded with multi wafers 22. On the upper side of the wafer, as shown in Fig. 2, an oxide film 32 and a polysilicon film 34 are sequentially formed, and not in the drawings, photoresist pattern is formed on the polysilicon film 34.
The inner wall of the process chamber 18 is formed of aluminum material.
outside the process chamber 18, there is provided a heating block 16 having a hot coil-or a lamp for raising the temperature of the process chamber 18.
A high vacuum pump 24 such as a dry pump and the process chamber 18 are connected.
Therefore, with the operation of the high vacuum pump 24 such as a dry pump, the pressure of the process chamber 18 is maintaiTied at 0.5 to 3 Torr, and with the application of a certain power on a hot coil installed in the heating block 16 or the operation of the lamp, the inner temperature of the process chamber 18 is maintained over 800 OC, a boiling point of the etch gas.
Among the halogen gas such as ClF3, BrF,, IF,, CIF, BrF3, IF,, and BrF, etc., the selected etch gas comes out of the etch gas supply source 10, and is supplied into the diffuser 14, and the carrier gas such as N2 comes out 7 of the carrier gas supply source 12, and is supplied into the diffuser 14.
The etch gas and the carrier gas supplied into the diffuser 14 are mixed and supplied into the process chamber 18. At this time, the etch gas is supplied into the process chamber 18 at a flow rate of 100 to 1000 SCCM (Standard Cubic Centimeter Minute), and the carrier gas is supplied into the process chamber at a flow rate of 300 to 4000 SCCM.
Accordingly, the etch gas is converted into radical state by the temperature and the pressure inside the process chamber 18, and the etch gas in the radical state isotropically etches a certain portion of the wafer 22. Normally, the etch gas in the radical state has isotropic etch properties, and the etch gas in the ion state is anisotropic properties.
In addition, wherf the isotropic etch using the etch gas is 'carried out, the inner wall of the process chamber 18 is made of aluminum compound so that the etch of the inner wall of the process chamber 18 by the etch gas is prevented.
After that, analyzing the gas remaining inside the process chamber 18 using a Residual Gas Analyzer (RGA) for the spectrum showing the intensity of the electron corresponding to the mass of the element after ionizing the supplied gases, and the result is shown in Fig. 3.
Referring to the Fig. 3, from the presence of the 8 1 is SiF3- and the SiF+, the silicon of the polysilicon film 34 formed on the wafer 22 and the F of the etch gas of ClF, are chemically reacted so as to form SiF., SiCl., etc. From the N and N2+, N2 gas is used as carrier gas.
As other embodiment, the inner temperature of the process chamber is changed, and the other processing condition is maintained as same, and as shown in Fig. 2, an oxide film 32 and a polysilicon film 34 are sequentially formed on a wafer 22, and not in the drawings, the photoresist pattern on the polysilicon film 34 on the wafer 22 is etched for a certain time. The result is shown in the following table.
[ Table 1 1 temperature 4000C 5000C 6000C 7000C 8000C polysilicon 1,000 1,800 3,000 5,700 9,500 1M (A/minY (A/min) (A/min) (A/min) (A/min) oxide film /min 30 60A/min /min Referring to the Table 1, when the inner temperature is maintained at 400 OC, the polysilicon film is etched at a rate of 1000 A/min, and the oxide film is not etched.
When the inner temperature is maintained at 500 OC, the polysilicon film is etched at a rate of 1800 A/min, and the oxide film is etched at a rate of 20 A/m-in.
when the inner temperature is maintained at 600 OC, 9 is the polysilicon film is etched at a rate of 3000 A/min, and the oxide film is etched at a rate of 30 A/min.
When the inner temperature is maintained at 700 OC, the polysilicon film is etched at a rate of 5700 A/min, and the oxide film is etched at a rate of 60 A/min.
When the inner temperature is maintained at 800 OC, the polysilicon film is etched at a rate of 9500 A/min, and the oxide film is etched at a rate of 140 A/min.
When the inner temperature is maintained at 400 to 800 OC, the selectivity of the polysilicon film for the oxide film is above 20; 1, which is typically a required ratio in the normal semiconductor etch process.
Therefore, according to the present invention, polysilicor. film is isotropically etched using halogen compound gas formed by the combination of the elements placed on other periodic line of the periodic table with a low bond energy, andNF3 gas.
It will be apparent to those skilled in the art that various modifications and variations of the present invention can be made without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
1
Claims (19)
1. An etching method for polysilicon comprising the steps of:
a) supplying a wafer having a polysilicon film on a certain layer into a process chamber; b) adjusting the pressure and the temperature of the process chamber within predetermined ranges; and c) supplying an etch gas including halogen compounds into the process chamber and etching the polysilicon film.
is
2. The etching method for polysilicon of the claim 1, wherein the certain layer is an oxide film.
3. The etching method for polysilicon of the claim 1, wherein the pressure inside the process chamber is in the range of from 0.5 to 3 Torr.
4. The etching method for polysilicon of the claim 3, wherein the temperature of the process chamber is above a boiling point of the etch gas below 800 OC.
5. The etching method for polysilicon of the claim 4, wherein the etch gas comprising halogen compounds is formed by the combination of different kinds of periodic elements in the periodic table.
11
6. The etching method for polysilicon of the claim 5, wherein the etch gas is C1F3 gas.
7. The etching method for polysilicon of the claim 5, wherein the etch gas is selected from BrF,, IF3, C1F, BrF3, IF,, and BrF gases.
8. The etching method for polysilicon of the claim 1, wherein the etch gas is NF3.
1 5 -L
9. The etching method for polysilicon of the claim 1, wherein a carrier gas is supplied into the process chamber.
10. The etching method for polysilicon of the claim 9, wherein the carrier gas is N2 gas or Ar gas.
11. The etching method for polysilicon of the claim 10, wherein 100 to 1000 SCCM of etch gas and 300 to 4000 SCCM of carrier gas are supplied into the process chamber.
12. An etching apparatus for polysilicon comprising an etch gas supply source for supplying etch gas comprising halogen compounds formed by the combination of different periodic elements in the Deriodic table or NF, 12 1 gas; a process chamber connected to the etch gas supply source and having a temperature control means; and a high vacuum line connected to the process chamber for controlling the pressure state of the process chamber.
13. The etching apparatus for polysilicon of the claim 12, wherein a carrier gas supply source for supplying a carrier gas is connected to the process chamber.
14. The etching apparatus for polysilicon of the claim 13, wherein the etch gas supply source and the carrier gas supply source are connected with a diffuser, and the diffuser and the process chamber are connected.
t
15.. The etching apparatus for polysilicon of the claim 14, wherein the temperature control means is a heating block provided outside the process chamber.
16. The etching apparatus for polysilicon of the claim 15, wherein hot coil or a lamp is provided inside the heating block.
17. The etching apparatus for polysilicon of the claim 16, wherein a dry pump is connected to the high 13 vacuum line.
18. The etching apparatus for polysilicon of the claim 12, wherein the inside wall of the process chamber is formed with aluminum compound.
19. A etching method of polysilicon and etching apparatus, substantially as described herein with reference to and as illustrated in the accompanying drawings.
14 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970066289A KR100271763B1 (en) | 1997-12-05 | 1997-12-05 | Apparatus and method for etching polysilicon layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9817395D0 GB9817395D0 (en) | 1998-10-07 |
| GB2332302A true GB2332302A (en) | 1999-06-16 |
Family
ID=19526550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9817395A Withdrawn GB2332302A (en) | 1997-12-05 | 1998-08-10 | Etching polysilicon films |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH11176817A (en) |
| KR (1) | KR100271763B1 (en) |
| CN (1) | CN1218986A (en) |
| DE (1) | DE19840437A1 (en) |
| GB (1) | GB2332302A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000051938A1 (en) * | 1999-03-04 | 2000-09-08 | Surface Technology Systems Limited | Chlorotrifluorine gas generator system |
| WO2004002882A1 (en) * | 2002-06-28 | 2004-01-08 | Robert Bosch Gmbh | Device and method for the production of chlorotrifluoride and system for etching semiconductor substrates using said device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10214620B4 (en) * | 2002-04-03 | 2010-02-04 | Robert Bosch Gmbh | Process for the plasmaless gas phase etching of a silicon wafer and device for its implementation |
| DE102016200506B4 (en) | 2016-01-17 | 2024-05-02 | Robert Bosch Gmbh | Etching device and etching process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3511727A (en) * | 1967-05-08 | 1970-05-12 | Motorola Inc | Vapor phase etching and polishing of semiconductors |
| EP0259572A2 (en) * | 1986-09-12 | 1988-03-16 | International Business Machines Corporation | High rate laser etching technique |
| EP0272143A2 (en) * | 1986-12-19 | 1988-06-22 | Applied Materials, Inc. | Bromine and iodine etch process for silicon and silicides |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62250642A (en) * | 1986-04-24 | 1987-10-31 | Victor Co Of Japan Ltd | Reactive ion etching method |
-
1997
- 1997-12-05 KR KR1019970066289A patent/KR100271763B1/en not_active IP Right Cessation
-
1998
- 1998-08-10 GB GB9817395A patent/GB2332302A/en not_active Withdrawn
- 1998-08-11 JP JP10226846A patent/JPH11176817A/en active Pending
- 1998-09-04 DE DE19840437A patent/DE19840437A1/en not_active Withdrawn
- 1998-09-04 CN CN98117482A patent/CN1218986A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3511727A (en) * | 1967-05-08 | 1970-05-12 | Motorola Inc | Vapor phase etching and polishing of semiconductors |
| EP0259572A2 (en) * | 1986-09-12 | 1988-03-16 | International Business Machines Corporation | High rate laser etching technique |
| EP0272143A2 (en) * | 1986-12-19 | 1988-06-22 | Applied Materials, Inc. | Bromine and iodine etch process for silicon and silicides |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000051938A1 (en) * | 1999-03-04 | 2000-09-08 | Surface Technology Systems Limited | Chlorotrifluorine gas generator system |
| WO2004002882A1 (en) * | 2002-06-28 | 2004-01-08 | Robert Bosch Gmbh | Device and method for the production of chlorotrifluoride and system for etching semiconductor substrates using said device |
| US8382940B2 (en) | 2002-06-28 | 2013-02-26 | Robert Bosch Gmbh | Device and method for producing chlorine trifluoride and system for etching semiconductor substrates using this device |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9817395D0 (en) | 1998-10-07 |
| JPH11176817A (en) | 1999-07-02 |
| CN1218986A (en) | 1999-06-09 |
| KR100271763B1 (en) | 2001-02-01 |
| DE19840437A1 (en) | 1999-06-17 |
| KR19990047772A (en) | 1999-07-05 |
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