GB2327296B - Method of making a FET - Google Patents

Method of making a FET

Info

Publication number
GB2327296B
GB2327296B GB9714782A GB9714782A GB2327296B GB 2327296 B GB2327296 B GB 2327296B GB 9714782 A GB9714782 A GB 9714782A GB 9714782 A GB9714782 A GB 9714782A GB 2327296 B GB2327296 B GB 2327296B
Authority
GB
United Kingdom
Prior art keywords
fet
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9714782A
Other versions
GB9714782D0 (en
GB2327296A (en
Inventor
Gary Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to GB9714782A priority Critical patent/GB2327296B/en
Priority to DE19733559A priority patent/DE19733559A1/en
Priority to FR9710081A priority patent/FR2767222B1/en
Priority to NL1006802A priority patent/NL1006802C2/en
Priority to JP22514897A priority patent/JP2990118B2/en
Publication of GB9714782D0 publication Critical patent/GB9714782D0/en
Publication of GB2327296A publication Critical patent/GB2327296A/en
Application granted granted Critical
Publication of GB2327296B publication Critical patent/GB2327296B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66606—Lateral single gate silicon transistors with final source and drain contacts formation strictly before final or dummy gate formation, e.g. contact first technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66537—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB9714782A 1997-07-14 1997-07-14 Method of making a FET Expired - Fee Related GB2327296B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB9714782A GB2327296B (en) 1997-07-14 1997-07-14 Method of making a FET
DE19733559A DE19733559A1 (en) 1997-07-14 1997-08-02 MOSFET production
FR9710081A FR2767222B1 (en) 1997-07-14 1997-08-06 METHOD FOR MANUFACTURING A HIGH PERFORMANCE MOS FIELD-EFFECT TRANSISTOR
NL1006802A NL1006802C2 (en) 1997-07-14 1997-08-20 High performance mosfet.
JP22514897A JP2990118B2 (en) 1997-07-14 1997-08-21 High-performance mos field effect transistor

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB9714782A GB2327296B (en) 1997-07-14 1997-07-14 Method of making a FET
DE19733559A DE19733559A1 (en) 1997-07-14 1997-08-02 MOSFET production
FR9710081A FR2767222B1 (en) 1997-07-14 1997-08-06 METHOD FOR MANUFACTURING A HIGH PERFORMANCE MOS FIELD-EFFECT TRANSISTOR
NL1006802A NL1006802C2 (en) 1997-07-14 1997-08-20 High performance mosfet.
JP22514897A JP2990118B2 (en) 1997-07-14 1997-08-21 High-performance mos field effect transistor

Publications (3)

Publication Number Publication Date
GB9714782D0 GB9714782D0 (en) 1997-09-17
GB2327296A GB2327296A (en) 1999-01-20
GB2327296B true GB2327296B (en) 1999-06-16

Family

ID=27512591

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9714782A Expired - Fee Related GB2327296B (en) 1997-07-14 1997-07-14 Method of making a FET

Country Status (5)

Country Link
JP (1) JP2990118B2 (en)
DE (1) DE19733559A1 (en)
FR (1) FR2767222B1 (en)
GB (1) GB2327296B (en)
NL (1) NL1006802C2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000332242A (en) 1999-05-21 2000-11-30 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
DE10052208C2 (en) * 2000-10-20 2002-11-28 Advanced Micro Devices Inc Method for producing a field effect transistor using an adjustment technology based on side wall spacing elements

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4837179A (en) * 1985-11-02 1989-06-06 Plessey Overseas Limited Method of making a LDD mosfet
EP0606001A2 (en) * 1992-12-28 1994-07-13 Nec Corporation Process of fabrication of bipolar and field effect transistors
US5472897A (en) * 1995-01-10 1995-12-05 United Microelectronics Corp. Method for fabricating MOS device with reduced anti-punchthrough region
US5545579A (en) * 1995-04-04 1996-08-13 Taiwan Semiconductor Manufacturing Company Method of fabricating a sub-quarter micrometer channel field effect transistor having elevated source/drain areas and lightly doped drains

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4837179A (en) * 1985-11-02 1989-06-06 Plessey Overseas Limited Method of making a LDD mosfet
EP0606001A2 (en) * 1992-12-28 1994-07-13 Nec Corporation Process of fabrication of bipolar and field effect transistors
US5472897A (en) * 1995-01-10 1995-12-05 United Microelectronics Corp. Method for fabricating MOS device with reduced anti-punchthrough region
US5545579A (en) * 1995-04-04 1996-08-13 Taiwan Semiconductor Manufacturing Company Method of fabricating a sub-quarter micrometer channel field effect transistor having elevated source/drain areas and lightly doped drains
US5623153A (en) * 1995-04-04 1997-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Sub-quarter micrometer channel field effect transistor having elevated source/drain areas and lightly doped drains

Also Published As

Publication number Publication date
FR2767222A1 (en) 1999-02-12
NL1006802C2 (en) 1999-02-25
JP2990118B2 (en) 1999-12-13
FR2767222B1 (en) 1999-09-17
DE19733559A1 (en) 1999-02-18
GB9714782D0 (en) 1997-09-17
JPH1174503A (en) 1999-03-16
GB2327296A (en) 1999-01-20

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20080714