GB2310314A - Glass or glass ceramic substrates - Google Patents

Glass or glass ceramic substrates Download PDF

Info

Publication number
GB2310314A
GB2310314A GB9603028A GB9603028A GB2310314A GB 2310314 A GB2310314 A GB 2310314A GB 9603028 A GB9603028 A GB 9603028A GB 9603028 A GB9603028 A GB 9603028A GB 2310314 A GB2310314 A GB 2310314A
Authority
GB
United Kingdom
Prior art keywords
glass
component
substrate
oxide
oxides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9603028A
Other versions
GB9603028D0 (en
Inventor
John George Darrant
Juergen H Werner
Ralf Bergmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Alstom UK Ltd
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
GEC Alsthom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV, GEC Alsthom Ltd filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority to GB9603028A priority Critical patent/GB2310314A/en
Publication of GB9603028D0 publication Critical patent/GB9603028D0/en
Priority to PCT/GB1997/000248 priority patent/WO1997030001A1/en
Publication of GB2310314A publication Critical patent/GB2310314A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Description

Glass and Glass-ceramic compositions: Glass and Glass ceramic substrates This invention relates to glass compositions and glass-ceramic compositions and their use as substrates.
Glass and Glass-ceramics have been used for many years as electrical and electronic substrates.
The properties of these materials in these applications which make them attractive are their coefficients of thermal expansion and their thermal stability. Alumino or Borosilicate glasses are currently used as substrates for silicon in devices such as solar cells and thin film transistors for displays, due to their matched thermal expansion and stability up to about 600 C and relatively low cost. The performance of such devices is limited by the maximum processing temperature at which the device can be produced, and this also affects the cost. An increase in the refractoriness (i.e. thermal stability) of the substrate would enable higher temperature processing with concomitant device performance enhancement and/or cost reduction.
Silicon is currently used as a substrate for silicon in microelectronic applications, e.g. silicon on insulator (501). The use of a lower cost material in place of silicon would offer significant cost reduction.
An object of the present invention is to provide a refractory glass or glass-ceramic composition able to withstand high temperature processing and capable of being used as a substrate, which gives improved performance at lower cost. High temperature in this context refers to temperatures of 700do and above.
Embodiments of the invention will be described which involve the selection of particular oxides which are mixed and heated to form a glass melt. Alternatively, chemical precursors to glass (e.g. sol-gel) are combined and reacted. The selected constituents and processing ensure a final substrate material which is either a glass or glass-ceramic with a coefficient of thermal expansion in the range 1-12 x 104/K.
The material may be used as a substrate for silicon for thin film solar cells (manufactured e.g.
by deposition techniques such as chemical vapour deposition, solution growth, ion beam or ion beam assisted deposition, molecular or cluster beam deposition or sputter deposition assisted techniques) and the technology of thin film transistors in displays. In addition, the material may be used as a substrate or support for crystalline silicon in microelectronic or micromechanic applications, e.g. Silicon on Insulator (SOI) or bonding of silicon wafers.
Fine adjustment of the thermal expansion coefficient of the glass or glass-ceramic allows also use for other semiconductor materials such as germanium, silicon-germanium, gallium arsenide, silicon carbide, diamond, copper-indium-diselinide, gallium nitride, etc, and other inorganic or semi-conducting materials as appropriate.
From one aspect, the invention provides a glass or glass-ceramic composition wherein the composition has thermal stability (as hereinbefore defined) up to at least 70( C.
From a further aspect, the invention provides a glass or glass-ceramic composition adapted to be used as a substrate for an inorganic material wherein the coefficient of thermal expansion of the composition is substantially the same as that of the inorganic material.
From a still further aspect, the invention provides a glass or glass-ceramic composition adapted to be used as a substrate for a semi-conducting material wherein the coefficient of thermal expansion of the composition is substantially the same as that of the semi-conducting material.
'Thermal stability' in the context refers to the ability of the composition to withstand processing without a significant degree of change in its surface characterisation as manifested by surface crystallisation, and its bulk characteristics. 'Substantially the same' refers to the coefficients of thermal expansion being sufficiently close so that the material applied to the substrate maintains its physical integrity eg it will not crack or peel.
Thus the substrate will have a similar coefficient of thermal expansion as that of the materials applied thereto eg silicon, germanium, silicon-germanium, gallium arsenide, silicon carbide, diamond, copper-indium-diselenide, gallium nitride, etc (i.e. in the range 1-12 x 106 /K).
The substrate may be either transparent, translucent or opaque.
The substrate material is normally made from oxides or chemical precursors to glasses or glass ceramics including at least a selection of: Si, , As203, BaO, Cs2O, CaO, CeO2, MgO, P2O5, SrO, TiO2, ZnO, ZrO2 and lanthanide oxides.
The substrate may be produced via a glass melting route eg wherein a selection of given oxides are mixed and heated to a form of glass melt or via chemical routes (e.g. sol-gel).
The glass or glass-ceramic may be made from SiO, Al203 nucleating agents comprising one or more of P2O5, TiO2 and ZrO2 and other oxides including one or more of As2O3, BaO, CaO, Cs2O CeO2, MgO, SrO, ZnO and lanthanide oxides.
For example, such a material may comprise a glass or glass-ceramic made from silica 50.0 wt% to 75.0 wt%; aluminium oxide 9.0 wt% to 40.0 wt%; arsenic oxide 0.1 wt% to 15.0 wt%; barium oxide 0.1 wt% to 45.0 wt%; calcium oxide 0.1 wt% to 25.0 wt%; caesium oxide 0.1 wt% to 45.0 wt%; cerium dioxide 0.1 wt% to 15.0 wt%; magnesium oxide 0.1 wt% to 25.0 wt%; phosphorous pentoxide 0.1 wt% to 15.0 wt%; strontium oxide 0.1 wt% to 25.0 wt%; titanium dioxide 0.1 wt% to 15.0 wt%; zinc oxide 0.1 wt% to 15.0 wt%; zirconium dioxide 0.1 wt% to 15.0 wt%, and lanthanide oxides 0.1 wt% to 15.0 wt% and other oxides to a total of 100 wt%.
Glass and glass-ceramic compositions within the scope of the invention may optionally comprise other constituents such as firing agents, colourants or other additives, used in minor proportions to modify melting characteristics, appearance and/or other glass properties.
The substrate may be formed to be flat, concave or convex and may be structured eg formed with intersecting grooves, or dimples.
The substrate may be used directly or with a passivation layer coating (e.g. SiO2, SPINY Al2 O3 or AIN) or a combination of suitable passivation layers; such passivation layer(s) may act for preventing the glass from crystallising and/or protecting the film from diffusion of impurities from the glass.
The substrate (with or without a passivation layer) may be coated with or bonded to a semiconducting film consisting of silicon, germanium, silicon-germanium, gallium arsenide, silicon carbide, diamond, copper-indium-diselenide, gallium nitride, or other inorganic/semiconducting materials. The semi-conducting material may be organic or inorganic.
Further, the semiconductor film may be fabricated into solar cells, thin film transistors, silicon on insulator structures, micromechanical devices, light emitting diodes, semiconductor lasers or optoelectronic devices or other solid state devices or circuits.
Still further, the substrate may be used as a mechanical support for the handling or processing of crystalline silicon or other semiconductors.
Embodiments of the invention are now given by way of example only.
Examples 1. In a first embodiment glass composed of all or a part of the components SiO2 , Al2 O3 BaO, MgO, ZnO, ZrO2, Cs2O is melted and cast to yield blocks for subsequent machining to desired substrate shape. Thin films of silicon or other semiconductors are deposited and /or subsequently treated in the temperature range of 700 - 1450 C to yield solar cells, thin film transistors, micromechanical, optoelectronic or other solid state devices or circuits.
2. Table 1 give a series of ten glass compositions in accordance with the invention. The constituents are melted at 16500C - 1800 C and annealed at e.g. 800 C for 1 h - 2 h.
Subsequent treatment is as in Example 1.
Constituent | Identifier Code NK2/(4290 etc...) 429O 4292 4293 4294 4297 4298 4300 4301 4302 4303 SlO2 55.0 63.6 58.0 60.0 64.0 53.0 68.0 65.3 64.6 64.2 Al2O3 30.0 17.3 15.8 14.0 20.0 32.0 22.0 20.5 20.3 20.8 BaO 10.0 4.5 8.0 26.0 3.4 3.7 7.0 MgO 16.0 15.0 10.0 6.6 8.0 7.9 ZnO 5.5 | 10.0 ZrO2 5.0 9.1 8.3 Cs2O - - - - - - 4.2 3.4 Table 1: Weight percentage composition of example glasses and glass-ceramlcs.
Table 2 below illustrates the results of thermal stability trials with some of the glass compositions as set out in Table 1 such compositions being identified as NK2/(4297, 4298 43004303)
Temperature/Time of Hold 900 C 950 C 1000 C 1050 C 1100 C Glass No.
4hr 16hr 4hr 16hr 4hr 16hr 4hr 16hr 4hr 16hr NK2(4297 B B C C C D D D D D NK2/4298 A B C D D D D D D D NK2/4300 A A B C C D D D D D NK2/4301 A A A A A B B B B B NK2/4302 A A A A A B B B B B NK2/4303 A A A A A A A B B B KEY
A B C D No surface crystallisation visible.
Very limited amount of surface crystallisation.
Very significant degree of surface crystallisation.
Severe surface crystallisation.
Table 2: Thermal stability trials on example glasses and glass-ceramics As indicated above 'thermal stability' refers to the ability of the composition to withstand processing without any or without a significant degree of change in its surface characteristics as manifested by surface crystallisation, and its bulk characteristics.
The table, Table 3, below illustrates the thermal behaviour of the glasses designated 4297, 4298 4300-4303 in accordance with the invention, in comparison with known glasses. (Pyrex is a registered trade mark).
Material Linear thermal expansion coefficient Transformation Softening α x 10-6 (25 - T C) temperature temperature 200 400 600 800 1000 TT TS Polycrystalline 3.13 3.55 3.79 3.82 3 7 Silicon Fused Quartz 1.29 1.11 L03 0.79 0.61 Pyrex Glass 4.10 3.87 3.94 - - 551 602 Schott 3.94 3.73 3.96 - - 556 612 float lass 4297 4.49 451 4S8 452 = 794 847 4298 4.13 4.61 4.80 4.65 = 820 850 4300 112 3.37 3.52 340 = 826 870 4301 33S 3.58 3.72 3.65 - 833 896 4302 350 3.74 3.88 3.72 = 837 879 4303 ~ 3.29 3.66 3.85 ~ 3.86 - 822 874 Table 3: Thermal expansion of polycrystalline silicon, fused quartz, Pyrex glass, Schott float glass and example glasses and glass-ceramics.
The accompanying Figure 1 illustrates the percentage linear change in dimensions of the glasses NK2/4300-4303 versus temperature in comparison with silicon.
3. A glass composition is prepared as per any one of the examples in Table 1 butin addition amorphous silicon is deposited e.g. by low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition at temperatures below 600 C and subsequently crystallized by a furnace anneal at temperatures around 600 C for periods of 2 to 48 h, by rapid thermal annealing at temperatures in the range of approx. 750 1300 C for fractions of seconds to several minutes or a combination of both or by laser annealing or zone melt crystallisation processes using a variety of heat sources.
4. Glass is prepared as per Example 1 or 2 above but in addition silicon is deposited at temperatures around 1000"C by chemical vapour deposition using a trichlorosilane process.
5. As per Example 3 except that the polycrystalline Si layer created in Example 3 is further thickened by a silicon - liquid phase epitaxy process from various metal solutions (e.g.
In, Sn Bi, Ga) at temperatures around 900"C, or a vapour phase epitaxy process from trichlorosilane at temperatures around 1000 C.
6. As Example 5, except that the silicon film is fabricated into a solar cell using standard microelectronic cleaning techniques (e.g. RCA cleaning sequence with or without HF etching or other standard cleaning procedures used in microelectronic device fabrication like cleaning solutions using organic cleaning ingredients), solid state or other means of dopant diffusion at temperatures around 850"C and an optional thermal Si surface oxidation at temperatures around 1100 C. The RCA cleaning sequence consists of two cleaning steps: first a mixture of ammonia, hydrogen peroxide and water, heated to about 70-80"C and applied for approximately 10 - 15 min followed by a water rinse and a mixture of hydrochloric acid, hydrogen peroxide and water, again at the same temperature and time. Alternatively, a mixture of sulphuric acid and hydrogen peroxide is used. There are a lot of varieties like boiling in HCI or HNq or dipping in HF or combinations. On the other hand, organic cleaning solvents like 'Mucasol' (RTM) may be utilised.
7. As Example 3, except that the silicon film is fabricated into thin film transistor devices or circuits using standard cleaning techniques, solid state diffusion or other means of dopant incorporation (e.g. ion implantation) and other electronic device production sequences.
8. As in any previous example except that sheet glass is either drawn or cast from the melt.
The glass may be polished if necessary - this will not always be essential.
9. As in any previous example except that sheet glass is formed by the float method.
10. As Examples 8 or 9 where the sheet glass is mechanically structured on either one or both faces.
11. A glass composed of silica 64 wt%, aluminium oxide 21 wt%, barium oxide 7 wt%, and magnesium oxide 8 wt% and processed as in any previous example.
12. As Example 11 except that sheet glass is either drawn or cast from the melt.
13. As Example 11 except that sheet glass is formed by the float method.
14. As in Example 12 or 13 where the glass is mechanically structured on either one or both faces.
15. As in any of the previous Examples except that the glass is heat-treated in the range 600 1500"C to develop a polycrystalline microstructure (i.e. formation of a glass-ceramic).
16. As in any previous example except that thin film transistors, solar cell materials or semiconductor lasers or light emitting diodes or other solid state devices or circuits are deposited on the substrate material.
17. As in any of examples 1 - 16 except that the glass or glass-ceramic is combined with a silicon superstrate for subsequent production of a silicon on insulator device or solar cell or micromechanical or optoelectronic devices or circuits.
18. As in any previous example except that the substrate is treated with a surface passivation layer (e.g. SiO2).
19. As in any previous example except the glass or glass-ceramic is used as a mechanical support for the handling and processing of crystalline silicon.
20. As in any of examples 1 - 18 except the glass or glass-ceramic sheet is bonded to crystalline silicon, 21. A glass composed of SiO2, Awl203, BaO and MgO is prepared from chemical precursors (e.g. sol-gel). Thin sheets are cast onto a suitable substrate and heat-treated at temperatures up to 1500"C. Silicon is deposited in the temperature range 700 - 1450"C to yield thin films for solar cells or other solid state devices such as thin film transistors or micromechanical devices.
22. As example 21 except that thin sheets are prepared by extrusion.
23. As in either of examples 21 or 22 except that the glass is heat-treated in the range 600 1500"C to develop a polycrystalline microstructure.
24. As in any of examples 21 - 23 except thin film transistors, solar cells, micromechanical devices or other solid state devices are fabricated on the substrate.
25. As in any of examples 21 - 24 except the glass or glass-ceramic is combined with a silicon superstrate for subsequent production of silicon on insulator or micromechanical devices.
26. As in any of examples 21 - 25 except that the substrate is treated with a surface passivation layer (e.g. SiO2, SjxNy, AIN, A1203).

Claims (1)

  1. Claims
    1. A component comprising a substrate having a material applied thereto either directly or with at least one intermediate layer between the substrate and the material, said substrate being formed of a glass or glass-ceramic composition having a thermal stability (as hereinbefore defined) up to at least 7000C and having a coefficient of thermal expansion which is substantially the same (as hereinbefore defined) as that of the material.
    2. A component as claimed in Claim 1 wherein the glass or glass-ceramic composition is transparent or translucent or opaque.
    3. A component as claimed in Claim 1 or Claim 2 wherein the glass or glass-ceramic composition is made from oxides or chemical precursors to glasses or glass-ceramics including at least two of the following:-SiO2, Awl203, As2O3, BaO, Cs2O, CaO, CeO2, MgO, P2Os, SrO, TiO2, ZnO, ZrO2, lanthanide oxides.
    4. A component as claimed in any preceding claim, said substrate being produced via a glass melting route, wherein a selection of given oxides is mixed and heated to a form of glass melt.
    5. A component as claimed in any one of Claims 1 - 3, said substrate being made using a chemical process eg sol-gel.
    6. A component as claimed in any one of Claims 1 - 5, said substrate comprising at least 50 wt% SiO2 and at least 9 wt% A1203 7. A component as claimed in any one of claims 1 - 5 said substrate being made from SiO2, Awl203, nucleating agents comprising one or more of P2O5, TiO2 and ZrO2, and other oxides including one or more of As2O3, BaO, CaO, Cs2O, CeO2, MgO, SrO, ZnO, lanthanide oxides.
    8. A component as claimed in any one of Claims 1 - 5, said substrate being made from silica 50.0 wt% to 75.0 wt% and aluminium oxide 9.0 wt% to 40.0 wt% and also including one or more of the following in the wt% as specified:- arsenic oxide 0.1 wt% to 15.0 wt%; barium oxide 0.1 wt% to 45.0 wt%; calcium oxide 0.1 wt% to 25.0 wt%; caesium oxide 0.1 wt% to 45.0 wt%; cerium dioxide 0.1 wt% to 15.0 wt%; magnesium oxide 0.1 wt% to 25.0 wt%; phosphorous pentoxide 0.1 wt% to 15.0 wt%; strontium oxide 0.1 wt% to 25.0 wt%; titanium dioxide 0.1 wt% to 15.0 wt%; zinc oxide 0.1 wt% to 15.0 wt%; zirconium dioxide 0.1 wt% to 15.0 wt%; lanthanide oxides 0.1 wt% to 15.0 wt%; other oxides.
    9. A component as claimed in any preceding claim wherein said substrate comprises constituents such as firing agents, colourants or other additives, used in minor proportions to modify melting characteristics, appearance and/or other glass properties.
    10. A component as claimed in any proceding claim wherein the material is an inorganic material.
    11. A component as claimed in any proceding claim wherein the material is a semi conducting material.
    12. A component as claimed in any preceding claim, said material being silicon.
    13. A component as claimed in any proceding claim wherein the material is applied as a film to the substrate.
    14. A component as claimed in any preceding claim, being a micro-electronic component.
    15. A component as claimed in any preceding claim wherein the substrate has a passivation layer coating.
    16. A component as claimed in any preceding claim wherein the substrate has a plurality of passivation layers applied thereto.
    17. A component as claimed in either of Claims 15 or 16 wherein the or each passivation layer comprises SiO2 and/or Sixty and/or A1203 and/or AIN.
    18. A component as claimed in any one of claims 15 - 17 wherein the substrate is coated with or bonded to a semiconducting film comprising silicon or germanium or silicon germanium or gallium arsenide or silicon carbide or diamond or copper-indium diselenide or gallium nitride.
    19. A method of manufacturing a component comprising a substrate having a material applied thereto either directly or with at least one intermediate layer between the substrate and the material, said method comprising forming the substrate of a glass or glass-ceramic composition having a thermal stability (as hereinbefore defined) up to at least 7000C and having a coefficient of thermal expansion which is substantially the same (as hereinbefore defined) as that of said material.
    20. A glass or glass-ceramic composition having thermal stability up to at least 7000 C and comprising at least 50 wt% SiO2and at least 9 wt% Al2O 3.
    21. A glass or glass-ceramic composition as claimed in Claim 20 which additionally comprises at least 0.1 wt% BaO and/or at least 0.1 wt% Cos 20.
    22. Glass or glass-ceramic composition as claimed in Claim 20 being formed of SiO 2 Alp03, nucleating agents comprising one or more of P2O5, TiO2 and ZrO2 and other oxides including one or more of As2O3, BaO, CaO, Cs2 O , CeO2, MgO, SrO, ZnO and lanthanide oxides.
    23. A glass or glass-ceramic composition as claimed in Claim 20 being made from silica
    50.0 wt% to 75.0 wt% and aluminium oxide 9.0 wt% to 40.0 wt% and also including one or more of the following in the wt% as specified:- arsenic oxide 0.1 wt% to 15.0 wt%; barium oxide 0.1 wt% to 45.0 wt%; calcium oxide 0.1 wt% to 25.0 wt%; caesium oxide 0.1 wt% to 45.0 wt%; cerium dioxide 0.1 wt% to 15.0 wt%; magnesium oxide 0.1 wt% to 25.0 wt%; phosphorous pentoxide 0.1 wt% to 15.0 wt%; strontium oxide 0.1 wt% to
    25.0 wt%; titanium dioxide 0.1 wt% to 15.0 wt%; zinc oxide 0.1 wt% to 15.0 wt%; zirconium dioxide 0.1 wt% to 15.0 wt%; lanthanide oxides 0.1 wt% to 15.0 wt%; other oxides.
    24. A glass or glass-ceramic composition substantially as herein before described with reference to any of examples 1 - 26.
    25. A component substantially as herein before described with reference to any of examples - 26.
GB9603028A 1996-02-14 1996-02-14 Glass or glass ceramic substrates Withdrawn GB2310314A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9603028A GB2310314A (en) 1996-02-14 1996-02-14 Glass or glass ceramic substrates
PCT/GB1997/000248 WO1997030001A1 (en) 1996-02-14 1997-01-29 Glass and glass-ceramic compositions; glass and glass-ceramic substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9603028A GB2310314A (en) 1996-02-14 1996-02-14 Glass or glass ceramic substrates

Publications (2)

Publication Number Publication Date
GB9603028D0 GB9603028D0 (en) 1996-04-10
GB2310314A true GB2310314A (en) 1997-08-20

Family

ID=10788688

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9603028A Withdrawn GB2310314A (en) 1996-02-14 1996-02-14 Glass or glass ceramic substrates

Country Status (2)

Country Link
GB (1) GB2310314A (en)
WO (1) WO1997030001A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1855324A1 (en) * 2006-05-12 2007-11-14 Applied Materials GmbH & Co. KG Substrate made of glass ceramic

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19916296C1 (en) * 1999-04-12 2001-01-18 Schott Glas Alkali-free aluminoborosilicate glass and its use
DE19934072C2 (en) * 1999-07-23 2001-06-13 Schott Glas Alkali-free aluminoborosilicate glass, its uses and processes for its manufacture
DE19942259C1 (en) * 1999-09-04 2001-05-17 Schott Glas Alkaline earth aluminum borosilicate glass and its uses
US7867932B2 (en) 2007-08-28 2011-01-11 Corning Incorporated Refractory glass ceramics
WO2014004079A1 (en) 2012-06-29 2014-01-03 Corning Incorporated Glass-ceramic substrates for semiconductor processing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2172282A (en) * 1985-03-11 1986-09-17 English Electric Co Ltd Toughened glass-ceramics
EP0265340A2 (en) * 1986-10-23 1988-04-27 Fujitsu Limited Multilayer ceramic copper circuit board
US5145540A (en) * 1989-10-25 1992-09-08 Hoechst Aktiengesellschaft Ceramic composition of matter and its use
US5342674A (en) * 1992-03-10 1994-08-30 Hitachi, Ltd. Ceramic composition and ceramic circuit board
US5362551A (en) * 1991-05-22 1994-11-08 Ngk Spark Plug Co., Ltd. Ceramic substrate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4180618A (en) * 1977-07-27 1979-12-25 Corning Glass Works Thin silicon film electronic device
US4464475A (en) * 1983-01-13 1984-08-07 Corning Glass Works Glass-ceramic articles containing osumilite
US4634683A (en) * 1985-10-23 1987-01-06 Corning Glass Works Barium and/or strontium aluminosilicate crystal-containing glasses for flat panel display devices
US4634684A (en) * 1985-10-23 1987-01-06 Corning Glass Works Strontium aluminosilicate glass substrates for flat panel display devices
US4714687A (en) * 1986-10-27 1987-12-22 Corning Glass Works Glass-ceramics suitable for dielectric substrates

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2172282A (en) * 1985-03-11 1986-09-17 English Electric Co Ltd Toughened glass-ceramics
EP0265340A2 (en) * 1986-10-23 1988-04-27 Fujitsu Limited Multilayer ceramic copper circuit board
US5145540A (en) * 1989-10-25 1992-09-08 Hoechst Aktiengesellschaft Ceramic composition of matter and its use
US5362551A (en) * 1991-05-22 1994-11-08 Ngk Spark Plug Co., Ltd. Ceramic substrate
US5342674A (en) * 1992-03-10 1994-08-30 Hitachi, Ltd. Ceramic composition and ceramic circuit board

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1855324A1 (en) * 2006-05-12 2007-11-14 Applied Materials GmbH & Co. KG Substrate made of glass ceramic

Also Published As

Publication number Publication date
WO1997030001A1 (en) 1997-08-21
GB9603028D0 (en) 1996-04-10

Similar Documents

Publication Publication Date Title
EP0220829B1 (en) Barium and/or strontium aluminosilicate crystal-containing glasses for flat panel display devices
AU600864B2 (en) Substrate glass for liquid crystal displays
US7300896B2 (en) Glass ceramic and method of producing the same
EP0869105B1 (en) Transparent glass-ceramics
JP6049141B2 (en) Arsenic-free spinel glass ceramic with high visible transmittance
KR100262115B1 (en) Alkali-free glass substrate
TWI320033B (en) High strain point glasses
JP3858293B2 (en) Alkali-free glass substrate
JP3666608B2 (en) Alkali-free glass substrate
US6197429B1 (en) Method for making transparent glass-ceramics with high temperature dimensional stability
JP2003525830A (en) Alkali-containing aluminum borosilicate glass and use thereof
US3637425A (en) An insulating coating on silicon
KR100861635B1 (en) High strain point glasses
KR101043181B1 (en) Aluminum silicophosphate glasses
GB2310314A (en) Glass or glass ceramic substrates
CA2014934A1 (en) Fabrication of semiconductor devices using phosphosilicate glasses
JPH01208343A (en) Transparent crystallized glass
JPH01126239A (en) Glass substrate for electronic equipment
US4666869A (en) Barium and/or strontium aluminosilicate crystal-containing glasses for flat panel display devices
JP2009528673A (en) Germanium structure on glass and glass ceramic
JPH09110460A (en) Alkali-free glass
US3961969A (en) Glass-ceramics for semiconductor doping
US7592278B2 (en) Glass ceramic
JPS6042246A (en) Glass for substrate
US3674520A (en) Solder glass for adhering sealing or coating

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)