GB2306692B - Optically activated semiconductor devices - Google Patents

Optically activated semiconductor devices

Info

Publication number
GB2306692B
GB2306692B GB9521999A GB9521999A GB2306692B GB 2306692 B GB2306692 B GB 2306692B GB 9521999 A GB9521999 A GB 9521999A GB 9521999 A GB9521999 A GB 9521999A GB 2306692 B GB2306692 B GB 2306692B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
optically activated
activated semiconductor
optically
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9521999A
Other versions
GB9521999D0 (en
GB2306692A (en
Inventor
Andrew James Shields
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Cambridge Research Centre Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Cambridge Research Centre Ltd filed Critical Toshiba Cambridge Research Centre Ltd
Priority to GB9521999A priority Critical patent/GB2306692B/en
Publication of GB9521999D0 publication Critical patent/GB9521999D0/en
Priority to US08/637,495 priority patent/US5963358A/en
Priority to JP10801596A priority patent/JP3825498B2/en
Publication of GB2306692A publication Critical patent/GB2306692A/en
Application granted granted Critical
Publication of GB2306692B publication Critical patent/GB2306692B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01716—Optically controlled superlattice or quantum well devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
GB9521999A 1995-04-26 1995-10-27 Optically activated semiconductor devices Expired - Lifetime GB2306692B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB9521999A GB2306692B (en) 1995-10-27 1995-10-27 Optically activated semiconductor devices
US08/637,495 US5963358A (en) 1995-04-26 1996-04-25 Semiconductor device and method for its operation
JP10801596A JP3825498B2 (en) 1995-04-26 1996-04-26 Optical modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9521999A GB2306692B (en) 1995-10-27 1995-10-27 Optically activated semiconductor devices

Publications (3)

Publication Number Publication Date
GB9521999D0 GB9521999D0 (en) 1996-01-03
GB2306692A GB2306692A (en) 1997-05-07
GB2306692B true GB2306692B (en) 1998-01-07

Family

ID=10782975

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9521999A Expired - Lifetime GB2306692B (en) 1995-04-26 1995-10-27 Optically activated semiconductor devices

Country Status (1)

Country Link
GB (1) GB2306692B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100589012C (en) * 2007-10-17 2010-02-10 中国科学院半导体研究所 Active region structure of quanta point light modulator

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0328214A2 (en) * 1988-02-12 1989-08-16 Philips Electronics Uk Limited A method of modulating an optical beam
EP0478060A2 (en) * 1990-09-24 1992-04-01 Philips Electronics Uk Limited An optically switchable device
EP0681200A1 (en) * 1994-05-06 1995-11-08 Nikolaos Themelis Pelekanos Optically controlled light modulator device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0328214A2 (en) * 1988-02-12 1989-08-16 Philips Electronics Uk Limited A method of modulating an optical beam
EP0478060A2 (en) * 1990-09-24 1992-04-01 Philips Electronics Uk Limited An optically switchable device
EP0681200A1 (en) * 1994-05-06 1995-11-08 Nikolaos Themelis Pelekanos Optically controlled light modulator device

Also Published As

Publication number Publication date
GB9521999D0 (en) 1996-01-03
GB2306692A (en) 1997-05-07

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20151026