GB2294808B - Method and device for biochemical sensing - Google Patents
Method and device for biochemical sensingInfo
- Publication number
- GB2294808B GB2294808B GB9600475A GB9600475A GB2294808B GB 2294808 B GB2294808 B GB 2294808B GB 9600475 A GB9600475 A GB 9600475A GB 9600475 A GB9600475 A GB 9600475A GB 2294808 B GB2294808 B GB 2294808B
- Authority
- GB
- United Kingdom
- Prior art keywords
- binding
- target material
- measurement
- backgate
- bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
Abstract
A method and application for detecting and measuring the presence of a binding target material (64) employs a semiconductor device (50) having a receptor-covered surface topgate (90), separated by a dielectric layer (58) from a substrate 56. Receptors 66 attached to this surface exhibit a chemical selectivity function. Binding occurs in a test solution (52) with charge associated with the target material (64) modulating at least one device characteristic. According to the present invention, measurement may occur under dry conditions, at a time and location different from when binding occurred, thus substantially eliminating problems associated with ionic shielding and reference electrodes, so prevalent with prior art wet measurement techniques. The device (50) includes backgate (62) to which a bias may be applied to restore the device's pre-binding characteristics which enhances the sensitivity of the device. Measurement of the restorative backgate bias provides a signal indicating binding of the desired target material. <IMAGE>
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78147991A | 1991-10-21 | 1991-10-21 | |
GB9410175A GB2278235B (en) | 1991-10-21 | 1992-10-20 | Method and device for biochemical sensing |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9600475D0 GB9600475D0 (en) | 1996-03-13 |
GB2294808A GB2294808A (en) | 1996-05-08 |
GB2294808B true GB2294808B (en) | 1996-07-10 |
Family
ID=26304919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9600475A Expired - Fee Related GB2294808B (en) | 1991-10-21 | 1992-10-20 | Method and device for biochemical sensing |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2294808B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104781658B (en) * | 2012-10-16 | 2017-11-21 | 皇家飞利浦有限公司 | Integrated circuit, sensor device, measuring method and manufacture method with nano wire CHEMFET sensors |
EP2746760B1 (en) * | 2012-12-21 | 2018-02-07 | Stichting IMEC Nederland | 2DEG sensor, method for making such sensor and use of such sensor |
JP2019501383A (en) * | 2015-12-09 | 2019-01-17 | ラモット・アット・テル・アビブ・ユニバーシテイ・リミテッドRamot At Tel Aviv University Ltd. | Methods and systems for sensing with modified nanostructures |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4180771A (en) * | 1977-12-02 | 1979-12-25 | Airco, Inc. | Chemical-sensitive field-effect transistor |
US4961833A (en) * | 1988-03-31 | 1990-10-09 | Kabushiki Kaisha Toshiba | Field-effect transistor-type semiconductor sensor |
-
1992
- 1992-10-20 GB GB9600475A patent/GB2294808B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4180771A (en) * | 1977-12-02 | 1979-12-25 | Airco, Inc. | Chemical-sensitive field-effect transistor |
US4961833A (en) * | 1988-03-31 | 1990-10-09 | Kabushiki Kaisha Toshiba | Field-effect transistor-type semiconductor sensor |
Also Published As
Publication number | Publication date |
---|---|
GB9600475D0 (en) | 1996-03-13 |
GB2294808A (en) | 1996-05-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20011020 |