GB2290661B - Semiconductor structure, and method of manufacturing same - Google Patents
Semiconductor structure, and method of manufacturing sameInfo
- Publication number
- GB2290661B GB2290661B GB9518447A GB9518447A GB2290661B GB 2290661 B GB2290661 B GB 2290661B GB 9518447 A GB9518447 A GB 9518447A GB 9518447 A GB9518447 A GB 9518447A GB 2290661 B GB2290661 B GB 2290661B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor structure
- manufacturing same
- manufacturing
- same
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76289—Lateral isolation by air gap
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB939305448A GB9305448D0 (en) | 1993-03-17 | 1993-03-17 | Semiconductor structure and method of manufacturing same |
PCT/GB1994/000475 WO1994022167A1 (en) | 1993-03-17 | 1994-03-11 | Semiconductor structure, and method of manufacturing same |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9518447D0 GB9518447D0 (en) | 1995-11-08 |
GB2290661A GB2290661A (en) | 1996-01-03 |
GB2290661B true GB2290661B (en) | 1997-05-14 |
Family
ID=10732184
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB939305448A Pending GB9305448D0 (en) | 1993-03-17 | 1993-03-17 | Semiconductor structure and method of manufacturing same |
GB9518447A Expired - Fee Related GB2290661B (en) | 1993-03-17 | 1994-03-11 | Semiconductor structure, and method of manufacturing same |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB939305448A Pending GB9305448D0 (en) | 1993-03-17 | 1993-03-17 | Semiconductor structure and method of manufacturing same |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0689719A1 (en) |
JP (1) | JPH08507904A (en) |
GB (2) | GB9305448D0 (en) |
WO (1) | WO1994022167A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE333465T1 (en) | 1996-05-08 | 2006-08-15 | Cyclacel Ltd | METHODS AND MEANS OF INHIBITING CDK4 ACTIVITY |
US6239473B1 (en) * | 1998-01-15 | 2001-05-29 | Kionix, Inc. | Trench isolation for micromechanical devices |
EP1084511A1 (en) | 1998-05-08 | 2001-03-21 | Infineon Technologies AG | Substrate and method for manufacturing the same |
AU9006801A (en) | 2000-09-21 | 2002-04-02 | Cambridge Semiconductor Ltd | Semiconductor device and method of forming a semiconductor device |
US7679160B2 (en) | 2004-09-03 | 2010-03-16 | Cambridge Semiconductor Limited | Semiconductor device and method of forming a semiconductor device |
JP5389464B2 (en) | 2009-02-10 | 2014-01-15 | フリースケール セミコンダクター インコーポレイテッド | Manufacturing method of semiconductor device |
JP2011044667A (en) * | 2009-08-24 | 2011-03-03 | Shin Etsu Handotai Co Ltd | Method for manufacturing semiconductor device |
JP6237515B2 (en) * | 2014-07-17 | 2017-11-29 | 株式会社デンソー | Pressure sensor and manufacturing method thereof |
US11049788B2 (en) | 2019-10-18 | 2021-06-29 | Microsoft Technology Licensing, Llc | Integrated circuit chip device with thermal control |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1439712A1 (en) * | 1964-08-08 | 1968-11-28 | Telefunken Patent | Process for the production of isolated monocrystalline areas with low shunt capacitance in the semiconductor body of a microminiaturized circuit arrangement based on solid bodies |
GB1223705A (en) * | 1967-04-19 | 1971-03-03 | Hitachi Ltd | Semiconductor devices |
US4070230A (en) * | 1974-07-04 | 1978-01-24 | Siemens Aktiengesellschaft | Semiconductor component with dielectric carrier and its manufacture |
US4072982A (en) * | 1974-07-04 | 1978-02-07 | Siemens Aktiengesellschaft | Semiconductor component with dielectric carrier and its manufacture |
GB1558957A (en) * | 1978-04-11 | 1980-01-09 | Standard Telephones Cables Ltd | Isolating semiconductor devices |
WO1991005366A1 (en) * | 1989-09-29 | 1991-04-18 | The Government Of The United States Of America, As Represented By The Secretary Of The Department Of The Navy | Method of producing a thin silicon-on-insulator layer |
EP0539311A2 (en) * | 1991-10-23 | 1993-04-28 | International Business Machines Corporation | Buried air dielectric isolation of silicon islands |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5969944A (en) * | 1982-10-14 | 1984-04-20 | Sanken Electric Co Ltd | Manufacture of integrated circuit from which bottom insulator is isolated |
US4888300A (en) * | 1985-11-07 | 1989-12-19 | Fairchild Camera And Instrument Corporation | Submerged wall isolation of silicon islands |
-
1993
- 1993-03-17 GB GB939305448A patent/GB9305448D0/en active Pending
-
1994
- 1994-03-11 JP JP6520752A patent/JPH08507904A/en active Pending
- 1994-03-11 EP EP94909181A patent/EP0689719A1/en not_active Withdrawn
- 1994-03-11 WO PCT/GB1994/000475 patent/WO1994022167A1/en not_active Application Discontinuation
- 1994-03-11 GB GB9518447A patent/GB2290661B/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1439712A1 (en) * | 1964-08-08 | 1968-11-28 | Telefunken Patent | Process for the production of isolated monocrystalline areas with low shunt capacitance in the semiconductor body of a microminiaturized circuit arrangement based on solid bodies |
GB1223705A (en) * | 1967-04-19 | 1971-03-03 | Hitachi Ltd | Semiconductor devices |
US4070230A (en) * | 1974-07-04 | 1978-01-24 | Siemens Aktiengesellschaft | Semiconductor component with dielectric carrier and its manufacture |
US4072982A (en) * | 1974-07-04 | 1978-02-07 | Siemens Aktiengesellschaft | Semiconductor component with dielectric carrier and its manufacture |
GB1558957A (en) * | 1978-04-11 | 1980-01-09 | Standard Telephones Cables Ltd | Isolating semiconductor devices |
WO1991005366A1 (en) * | 1989-09-29 | 1991-04-18 | The Government Of The United States Of America, As Represented By The Secretary Of The Department Of The Navy | Method of producing a thin silicon-on-insulator layer |
EP0539311A2 (en) * | 1991-10-23 | 1993-04-28 | International Business Machines Corporation | Buried air dielectric isolation of silicon islands |
Non-Patent Citations (1)
Title |
---|
Patent Abstracts of Japan vol 8, no 176 (E-260)(1613)14.8.84&JP A 59069944 (SANKEN DENKI KK)20.4.84 * |
Also Published As
Publication number | Publication date |
---|---|
GB2290661A (en) | 1996-01-03 |
WO1994022167A1 (en) | 1994-09-29 |
EP0689719A1 (en) | 1996-01-03 |
GB9518447D0 (en) | 1995-11-08 |
GB9305448D0 (en) | 1993-05-05 |
JPH08507904A (en) | 1996-08-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19990311 |