GB2290661B - Semiconductor structure, and method of manufacturing same - Google Patents

Semiconductor structure, and method of manufacturing same

Info

Publication number
GB2290661B
GB2290661B GB9518447A GB9518447A GB2290661B GB 2290661 B GB2290661 B GB 2290661B GB 9518447 A GB9518447 A GB 9518447A GB 9518447 A GB9518447 A GB 9518447A GB 2290661 B GB2290661 B GB 2290661B
Authority
GB
United Kingdom
Prior art keywords
semiconductor structure
manufacturing same
manufacturing
same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9518447A
Other versions
GB2290661A (en
GB9518447D0 (en
Inventor
Alan Gordon Robert Evans
Mohammad Mateen Farooqui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BTG International Ltd
Original Assignee
British Technology Group Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Technology Group Ltd filed Critical British Technology Group Ltd
Publication of GB9518447D0 publication Critical patent/GB9518447D0/en
Publication of GB2290661A publication Critical patent/GB2290661A/en
Application granted granted Critical
Publication of GB2290661B publication Critical patent/GB2290661B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283Lateral isolation by refilling of trenches with dielectric material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76289Lateral isolation by air gap

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Element Separation (AREA)
GB9518447A 1993-03-17 1994-03-11 Semiconductor structure, and method of manufacturing same Expired - Fee Related GB2290661B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB939305448A GB9305448D0 (en) 1993-03-17 1993-03-17 Semiconductor structure and method of manufacturing same
PCT/GB1994/000475 WO1994022167A1 (en) 1993-03-17 1994-03-11 Semiconductor structure, and method of manufacturing same

Publications (3)

Publication Number Publication Date
GB9518447D0 GB9518447D0 (en) 1995-11-08
GB2290661A GB2290661A (en) 1996-01-03
GB2290661B true GB2290661B (en) 1997-05-14

Family

ID=10732184

Family Applications (2)

Application Number Title Priority Date Filing Date
GB939305448A Pending GB9305448D0 (en) 1993-03-17 1993-03-17 Semiconductor structure and method of manufacturing same
GB9518447A Expired - Fee Related GB2290661B (en) 1993-03-17 1994-03-11 Semiconductor structure, and method of manufacturing same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB939305448A Pending GB9305448D0 (en) 1993-03-17 1993-03-17 Semiconductor structure and method of manufacturing same

Country Status (4)

Country Link
EP (1) EP0689719A1 (en)
JP (1) JPH08507904A (en)
GB (2) GB9305448D0 (en)
WO (1) WO1994022167A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE333465T1 (en) 1996-05-08 2006-08-15 Cyclacel Ltd METHODS AND MEANS OF INHIBITING CDK4 ACTIVITY
US6239473B1 (en) * 1998-01-15 2001-05-29 Kionix, Inc. Trench isolation for micromechanical devices
EP1084511A1 (en) 1998-05-08 2001-03-21 Infineon Technologies AG Substrate and method for manufacturing the same
AU9006801A (en) 2000-09-21 2002-04-02 Cambridge Semiconductor Ltd Semiconductor device and method of forming a semiconductor device
US7679160B2 (en) 2004-09-03 2010-03-16 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
JP5389464B2 (en) 2009-02-10 2014-01-15 フリースケール セミコンダクター インコーポレイテッド Manufacturing method of semiconductor device
JP2011044667A (en) * 2009-08-24 2011-03-03 Shin Etsu Handotai Co Ltd Method for manufacturing semiconductor device
JP6237515B2 (en) * 2014-07-17 2017-11-29 株式会社デンソー Pressure sensor and manufacturing method thereof
US11049788B2 (en) 2019-10-18 2021-06-29 Microsoft Technology Licensing, Llc Integrated circuit chip device with thermal control

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439712A1 (en) * 1964-08-08 1968-11-28 Telefunken Patent Process for the production of isolated monocrystalline areas with low shunt capacitance in the semiconductor body of a microminiaturized circuit arrangement based on solid bodies
GB1223705A (en) * 1967-04-19 1971-03-03 Hitachi Ltd Semiconductor devices
US4070230A (en) * 1974-07-04 1978-01-24 Siemens Aktiengesellschaft Semiconductor component with dielectric carrier and its manufacture
US4072982A (en) * 1974-07-04 1978-02-07 Siemens Aktiengesellschaft Semiconductor component with dielectric carrier and its manufacture
GB1558957A (en) * 1978-04-11 1980-01-09 Standard Telephones Cables Ltd Isolating semiconductor devices
WO1991005366A1 (en) * 1989-09-29 1991-04-18 The Government Of The United States Of America, As Represented By The Secretary Of The Department Of The Navy Method of producing a thin silicon-on-insulator layer
EP0539311A2 (en) * 1991-10-23 1993-04-28 International Business Machines Corporation Buried air dielectric isolation of silicon islands

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969944A (en) * 1982-10-14 1984-04-20 Sanken Electric Co Ltd Manufacture of integrated circuit from which bottom insulator is isolated
US4888300A (en) * 1985-11-07 1989-12-19 Fairchild Camera And Instrument Corporation Submerged wall isolation of silicon islands

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439712A1 (en) * 1964-08-08 1968-11-28 Telefunken Patent Process for the production of isolated monocrystalline areas with low shunt capacitance in the semiconductor body of a microminiaturized circuit arrangement based on solid bodies
GB1223705A (en) * 1967-04-19 1971-03-03 Hitachi Ltd Semiconductor devices
US4070230A (en) * 1974-07-04 1978-01-24 Siemens Aktiengesellschaft Semiconductor component with dielectric carrier and its manufacture
US4072982A (en) * 1974-07-04 1978-02-07 Siemens Aktiengesellschaft Semiconductor component with dielectric carrier and its manufacture
GB1558957A (en) * 1978-04-11 1980-01-09 Standard Telephones Cables Ltd Isolating semiconductor devices
WO1991005366A1 (en) * 1989-09-29 1991-04-18 The Government Of The United States Of America, As Represented By The Secretary Of The Department Of The Navy Method of producing a thin silicon-on-insulator layer
EP0539311A2 (en) * 1991-10-23 1993-04-28 International Business Machines Corporation Buried air dielectric isolation of silicon islands

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Patent Abstracts of Japan vol 8, no 176 (E-260)(1613)14.8.84&JP A 59069944 (SANKEN DENKI KK)20.4.84 *

Also Published As

Publication number Publication date
GB2290661A (en) 1996-01-03
WO1994022167A1 (en) 1994-09-29
EP0689719A1 (en) 1996-01-03
GB9518447D0 (en) 1995-11-08
GB9305448D0 (en) 1993-05-05
JPH08507904A (en) 1996-08-20

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19990311