GB2279803B - A high density interconnect structure including a chamber - Google Patents

A high density interconnect structure including a chamber

Info

Publication number
GB2279803B
GB2279803B GB9107029A GB9107029A GB2279803B GB 2279803 B GB2279803 B GB 2279803B GB 9107029 A GB9107029 A GB 9107029A GB 9107029 A GB9107029 A GB 9107029A GB 2279803 B GB2279803 B GB 2279803B
Authority
GB
United Kingdom
Prior art keywords
chamber
high density
structure including
interconnect structure
density interconnect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9107029A
Other versions
GB9107029D0 (en
GB2279803A (en
Inventor
Robert John Wojnarowski
Charles William Eichelberger
William Paul Kornrumpf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Priority claimed from DE4115043A external-priority patent/DE4115043A1/en
Publication of GB9107029D0 publication Critical patent/GB9107029D0/en
Publication of GB2279803A publication Critical patent/GB2279803A/en
Application granted granted Critical
Publication of GB2279803B publication Critical patent/GB2279803B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
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    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2401—Structure
    • H01L2224/2402—Laminated, e.g. MCM-L type
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    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB9107029A 1990-04-05 1991-04-04 A high density interconnect structure including a chamber Expired - Fee Related GB2279803B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US50477090A 1990-04-05 1990-04-05
DE4115043A DE4115043A1 (en) 1991-05-08 1991-05-08 High density interconnect structure for packaging microwave and other overlay sensitive chips
FR9109606A FR2704692B1 (en) 1991-05-08 1991-07-29 High density interconnection structure comprising a chamber and manufacturing method.
US08/141,460 US5331203A (en) 1990-04-05 1993-10-25 High density interconnect structure including a chamber

Publications (3)

Publication Number Publication Date
GB9107029D0 GB9107029D0 (en) 1994-10-26
GB2279803A GB2279803A (en) 1995-01-11
GB2279803B true GB2279803B (en) 1995-05-24

Family

ID=27435185

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9107029A Expired - Fee Related GB2279803B (en) 1990-04-05 1991-04-04 A high density interconnect structure including a chamber

Country Status (1)

Country Link
GB (1) GB2279803B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4135654A1 (en) * 1991-10-29 2003-03-27 Lockheed Corp High density interconnect structure for electronic components operating at high frequencies

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063349A (en) * 1976-12-02 1977-12-20 Honeywell Information Systems Inc. Method of protecting micropackages from their environment
EP0029858A1 (en) * 1979-06-15 1981-06-10 Fujitsu Limited Semiconductor device
EP0069985A2 (en) * 1981-07-10 1983-01-19 Siemens Aktiengesellschaft Protection arrangement for semiconductor arrangements
EP0122687A2 (en) * 1983-03-18 1984-10-24 Mitsubishi Denki Kabushiki Kaisha A semiconductor device comprising packing means for protecting parts of the device
EP0130571A2 (en) * 1983-07-01 1985-01-09 Hitachi, Ltd. A semiconductor device comprising an alpha-rays shielding layer
GB2179790A (en) * 1985-08-26 1987-03-11 Anritsu Corp Thin film conductor
EP0242295A1 (en) * 1986-04-16 1987-10-21 AEROSPATIALE Société Nationale Industrielle X-ray shielded electronic circuit box
GB2199182A (en) * 1986-12-18 1988-06-29 Marconi Electronic Devices Multilayer circuit arrangement

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063349A (en) * 1976-12-02 1977-12-20 Honeywell Information Systems Inc. Method of protecting micropackages from their environment
EP0029858A1 (en) * 1979-06-15 1981-06-10 Fujitsu Limited Semiconductor device
EP0069985A2 (en) * 1981-07-10 1983-01-19 Siemens Aktiengesellschaft Protection arrangement for semiconductor arrangements
EP0122687A2 (en) * 1983-03-18 1984-10-24 Mitsubishi Denki Kabushiki Kaisha A semiconductor device comprising packing means for protecting parts of the device
EP0130571A2 (en) * 1983-07-01 1985-01-09 Hitachi, Ltd. A semiconductor device comprising an alpha-rays shielding layer
GB2179790A (en) * 1985-08-26 1987-03-11 Anritsu Corp Thin film conductor
EP0242295A1 (en) * 1986-04-16 1987-10-21 AEROSPATIALE Société Nationale Industrielle X-ray shielded electronic circuit box
GB2199182A (en) * 1986-12-18 1988-06-29 Marconi Electronic Devices Multilayer circuit arrangement

Also Published As

Publication number Publication date
GB9107029D0 (en) 1994-10-26
GB2279803A (en) 1995-01-11

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Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19990404

728V Application for restoration filed (sect. 28/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
728Y Application for restoration allowed (sect. 28/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20030404