GB2256950A - Sensing and controlling substrate voltage level - Google Patents

Sensing and controlling substrate voltage level Download PDF

Info

Publication number
GB2256950A
GB2256950A GB9124294A GB9124294A GB2256950A GB 2256950 A GB2256950 A GB 2256950A GB 9124294 A GB9124294 A GB 9124294A GB 9124294 A GB9124294 A GB 9124294A GB 2256950 A GB2256950 A GB 2256950A
Authority
GB
United Kingdom
Prior art keywords
voltage
sensing
sensing circuit
bias
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9124294A
Other languages
English (en)
Other versions
GB9124294D0 (en
Inventor
Young-Taek Lee
Kyoung-Ho Kim
Jin-Man Han
Hong-Seon Hwang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019910009999A external-priority patent/KR930001236A/ko
Priority claimed from KR1019910009997A external-priority patent/KR940008150B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9124294D0 publication Critical patent/GB9124294D0/en
Publication of GB2256950A publication Critical patent/GB2256950A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316—Testing of analog circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9124294A 1991-06-17 1991-11-15 Sensing and controlling substrate voltage level Withdrawn GB2256950A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019910009999A KR930001236A (ko) 1991-06-17 1991-06-17 전원전압 변동에 둔감한 특성을 갖는 기판 전압 레벨 감지회로
KR1019910009997A KR940008150B1 (ko) 1991-06-17 1991-06-17 반도체 메모리 장치의 백바이어스레벨 감지회로

Publications (2)

Publication Number Publication Date
GB9124294D0 GB9124294D0 (en) 1992-01-08
GB2256950A true GB2256950A (en) 1992-12-23

Family

ID=26628647

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9124294A Withdrawn GB2256950A (en) 1991-06-17 1991-11-15 Sensing and controlling substrate voltage level

Country Status (7)

Country Link
JP (1) JPH04368691A (fr)
CN (1) CN1067773A (fr)
DE (1) DE4135148C2 (fr)
FR (1) FR2677771A1 (fr)
GB (1) GB2256950A (fr)
IT (1) IT1251721B (fr)
NL (1) NL9101710A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0609497A2 (fr) * 1993-01-11 1994-08-10 United Memories, Inc. Dispositif et méthode pour maintenir une tension élévée pour applications à basse puissance

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0123849B1 (ko) * 1994-04-08 1997-11-25 문정환 반도체 디바이스의 내부 전압발생기
KR0127318B1 (ko) * 1994-04-13 1998-04-02 문정환 백바이어스전압 발생기
US6795359B1 (en) * 2003-06-10 2004-09-21 Micron Technology, Inc. Methods and apparatus for measuring current as in sensing a memory cell
TWI651929B (zh) * 2018-05-02 2019-02-21 友達光電股份有限公司 感測電路

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0032588A2 (fr) * 1979-12-27 1981-07-29 Kabushiki Kaisha Toshiba Circuit générateur de polarisation de substrat
GB2149251A (en) * 1983-11-02 1985-06-05 Inmos Corp Substrate bias generator
EP0143879A1 (fr) * 1983-10-27 1985-06-12 International Business Machines Corporation Génerateur de tension de substrat
GB2151823A (en) * 1983-11-30 1985-07-24 Ates Componenti Elettron Polarization voltage regulating circuit for field-effect transistor integrated circuit substrate
US4739191A (en) * 1981-04-27 1988-04-19 Signetics Corporation Depletion-mode FET for the regulation of the on-chip generated substrate bias voltage

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4229667A (en) * 1978-08-23 1980-10-21 Rockwell International Corporation Voltage boosting substrate bias generator
JPS57199335A (en) * 1981-06-02 1982-12-07 Toshiba Corp Generating circuit for substrate bias
JP2501590B2 (ja) * 1987-07-29 1996-05-29 沖電気工業株式会社 半導体装置の駆動回路
JPH0262071A (ja) * 1988-08-26 1990-03-01 Mitsubishi Electric Corp 半導体装置
JPH0783254B2 (ja) * 1989-03-22 1995-09-06 株式会社東芝 半導体集積回路
JP2841480B2 (ja) * 1989-06-21 1998-12-24 日本電気株式会社 基板電位設定回路

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0032588A2 (fr) * 1979-12-27 1981-07-29 Kabushiki Kaisha Toshiba Circuit générateur de polarisation de substrat
US4739191A (en) * 1981-04-27 1988-04-19 Signetics Corporation Depletion-mode FET for the regulation of the on-chip generated substrate bias voltage
EP0143879A1 (fr) * 1983-10-27 1985-06-12 International Business Machines Corporation Génerateur de tension de substrat
GB2149251A (en) * 1983-11-02 1985-06-05 Inmos Corp Substrate bias generator
GB2151823A (en) * 1983-11-30 1985-07-24 Ates Componenti Elettron Polarization voltage regulating circuit for field-effect transistor integrated circuit substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
I B M Technical Disclosure Bulletin, Vol.27. NO.2, July 1984pages 1137-1138(Cassidy) *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0609497A2 (fr) * 1993-01-11 1994-08-10 United Memories, Inc. Dispositif et méthode pour maintenir une tension élévée pour applications à basse puissance
EP0609497A3 (fr) * 1993-01-11 1995-03-15 United Memories Inc Dispositif et méthode pour maintenir une tension élévée pour applications à hasse tension.

Also Published As

Publication number Publication date
IT1251721B (it) 1995-05-22
ITMI912939A1 (it) 1993-05-06
CN1067773A (zh) 1993-01-06
NL9101710A (nl) 1993-01-18
GB9124294D0 (en) 1992-01-08
FR2677771A1 (fr) 1992-12-18
ITMI912939A0 (it) 1991-11-06
DE4135148C2 (de) 1995-02-02
DE4135148A1 (de) 1992-12-24
JPH04368691A (ja) 1992-12-21

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)