GB2251721A - Colour filter for a CCD imager - Google Patents

Colour filter for a CCD imager Download PDF

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Publication number
GB2251721A
GB2251721A GB9113673A GB9113673A GB2251721A GB 2251721 A GB2251721 A GB 2251721A GB 9113673 A GB9113673 A GB 9113673A GB 9113673 A GB9113673 A GB 9113673A GB 2251721 A GB2251721 A GB 2251721A
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United Kingdom
Prior art keywords
layer
layers
colour filter
lenses
dyed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9113673A
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GB2251721B (en
GB9113673D0 (en
Inventor
Sang Sik Kim
Han Su Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9113673D0 publication Critical patent/GB9113673D0/en
Publication of GB2251721A publication Critical patent/GB2251721A/en
Application granted granted Critical
Publication of GB2251721B publication Critical patent/GB2251721B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)

Abstract

The back-scattering of incident light is reduced by forming a back-scattering preventing layer 59 of an anti-reflecting material such as xylene on lenses 55, 56, 57. The lenses are formed on a support layer 53 and intermediate layers 43, 47, 51, formed above dyed layers 41, 45, 49, are sandwiched between the support layer and a levelling layer 39 above a semiconductor substrate 31. <IMAGE>

Description

1 - - COLOUR FILTER AND ITS MANUFACTURE The present invention relates to a
colour filter and a method for its manufacture. In particular, it relates to a colour filter system which improves the sensitivity and spectral resolution of pixels of a semiconductor device by inhibiting back scattering and diffuse reflection.
Recently, solid state image sensing devices have been devised which can function as replacements for conventional electron tubes, and so many consider them to be the next generation of image sensing devices. They achieve the colour discrimination by means of colour filters at the upper side of their optical-to-electrical converter regions.
The same technology can be applied to display devices such as LCD (Liquid Crystal Display) devices, to impart colour to same.
The colour filters are of two basic types. One is an organic filter made by dyeing organic materials such as casein or gelatin. The other type is an inorganic filter which utilizes optical interference.
Figure 1 of the accompanying drawings shows a cross-sectional view of a colour filter of a conventional CCD (Charge Coupled Device).
In the CCD shown in Fig. 1, a substrate 1 has a recessed (or concave) surface and a raised (or convex) surface. On the recessed surface, photodiodes 2, 3, and 4 are formed. On the raised surface, a conducting layer 5 and an insulating layer 7 are formed.
2 On the CCD, a levelling (or flating) layer 9 and a plurality of intermediate layers 13, 17 and 21 are formed by depositing a transparent material such as polyimide.
On the surface of he levelling layer 9 and intermediate layers 13 and 17, respective dyed layers 11, 15 and 19 are formed to provide filter elements for the photodiodes 2, 3 and 4.
The dyed layers 11, 15 and 19 are composed of an organic material such as casein or gelatin containing a specified amount of ammonia and are stained with appropriate dye colours, for example magenta, cyan, and yellow to provide the desired response across the visible spectrum.
A lens support layer 23 is formed across the entire surface of the structure and on this, lenses 25, 26 and 27 are formed for the photodiodes 2, 3 and 4, respectively.
A method of manufacturing the colour filter described above will now be explained briefly.
The semiconductor device 1 has a recessed and raised surface structure and the metal conducting layer 5 and the insulating layer 7 are formed on the raised surfaces. The levelling layer is formed and subsequently the dyed layer 11 for the photodiode 2 formed on top. The dyed layer 11 could for example be magenta, cyan or yellow.
Next, the intermediate layer 13 is formed by depositing polyimide across the entire structure surface. The dyed layers 15 and 19, and the intermediate layer 17 are then formed in the same manner.
3 The intermediate layers 13 and 19 are used to prevent the mixing of colours from the respective previously formed dyed layer. The highest intermediate layer 21 and the lens support layer 23 are formed last. The highest intermediate layer 21 Is formed from the same material as the lower two intermediate layers 13 and 17, and the lens support layer 23 is composed of an organic material.
After depositing the same or similar material as for the lens support layer 23, the lenses 25, 26 and 27 are formed by a photolithograpy and thermal process.
In the colour filter described above, the light incident on the lenses at a normal angle is focused onto each dyed layer and light of the respective filtered colour is detected by the photodiodes.
However, this conventional colour filter degrades the sensitivity of the photodiodes since not all of the light incident on the lenses is focused onto the dyed layers because of the surface curvature of lenses and because mutual interference of back-scattered light from neighbouring lenses degrades the spectral resolution of the device.
Moreover, it is difficult to form the lenses so as to be in contact with one another. Therefore, the highest intermediate layer is exposed to incident light in the region between the lenses, which also degrades the spectral resolution of neighbouring photodiodes.
An object of this invention is to provide a colour filter which improves the sensitivity and the spectral resolution of such photodiodes by inhibiting the back scattering.
4 Another object of this invention is to provide a colour filter which improves the spectral resolution of such photodiodes by preventing light entering the region between neighbouring photodiodes.
Yet another object of the invention is to provide a method of manufacturing the colour filter described above.
According to the present invention, there is provided a colour filter formed on a semiconductor substrate, the filter comprising:
a levelling layer formed on said semiconductor substrate, at least two intermediate layers formed on the levelling layer, - at least two dyed layers respectively formed beneath said intermediate layers, a lens support layer formed on the highest intermediate layer, at least two lenses formed on said lens support layer, and a respective back-scattering preventing layer formed on each of said lenses.
According to the present invention, there is provided a method of manufacturing a colour filter on a semiconductor substrate, the method comprising the steps of:
(i) forming a levelling layer on said semiconductor substrate, (ii) forming a dyed layer on the levelling layer, and forming an intermediate layer on the dyed layer, (iii) repeating step (ii) on top of the intermediate layer at least once, (iv) forming a lens support layer on the highest intermediate layer, (v) forming at least two lenses on said lens support layer, and (vi) forming respective back-scattering preventing layers on each of said lenses.
These and other objects, features, and advantages of the present invention will become more apparent from the following description of a preferred embodiment taken in conjunction with the accompanying drawings, in which:
Fig. 1 is a cross-sectional view of a conventional colour filter; Fig. 2 is a cross-sectional view of a colour filter according to the present invention; and Figs. 3(A)-M are cross-sectional views useful in explaining a method of manufacturing the colour filter shown in Figure 2.
Fig. 2 shows a cross-sectional view of a colour filter according to the invention, made on CCD.
A semiconductor substrate 31 has a recessed (or concave) surface and raised (or convex) surface structure. At the recessed surface first, second and third photodiodes 32, 33 and 34 are formed in a matrix pattern. Whilst at the raised surface, a conducting layer 35 and an insulating layer 37 are formed.
On this CCD, a levelling (or flating) layer 39 is formed to remove the step difference between the recessed and raised surfaces. First, second and third intermediate layers 43, 47 and 51 are then sequentially formed on the levelling layer 39.
The levelling layer and the intermediate layers comprise a material which transmits about 90 percent of incident light when the wavelength is in the range of 400-700 nm 6 and has substantially no variation of material properties over the temperature range of 150-200C.
First, second and third dyed layers 41, 45 and 49 are respectively formed on the levelling layer and first and second intermediate layers, above the photodiodes 32, S3 and 34. The dyed layers are made of casein or gelatin containing a specified amount of ammonia and are dyed magenta, cyan and yellow, respectively.
on the third intermediate layer 51, a lens support layer 53 of polyimide or acrylic is formed. Subsequently,.first, second and third lenses 55, 56 and 57 are formed on the lens support layer, above the first, second and third photodiodes 31, 33 and 34.
The lenses are spaced apart from one another by a predetermined distance, and-respective back-scattering preventing layers 59 are formed on top of these lenses. The back-scattering preventing layers 59 are made of an anti-reflecting material. Also, the back-scattering preventing layers 59 are formed to be touching or overlapping with one another, in order to focus any light incident on the portion between adjacent lenses.
Figs. 3 (A)-(C) show the sequence of processing steps in the manufacture of the device shown in Figure 2.
As depicted in Fig. 3 (A), at the recessed surface of the silicon substrate 31, the photodiodes 32, 33 and 34 are formed, whilst the conducting layer 35 of Al and the insulating layer 37 of SiO 2 are formed on the raised surface. On this CCD, the levelling layer 39 is formed by depositing polyimide to a thickness of 0.3-3.04m.
Next, after depositing the casein or gelatin containing a specified amount of ammonia and patterning the 7 deposited film by conventional photolithography, the first dye layer is formed by depositing an appropriate dyeing material on the entire surface of the structure.
The dyeing material reacts with the dye layer pattern but does not react with levelling layer 39. The dyeing material is then removed with deionized water. In this embodiment, the first dye layer 41 is thereby dyed magenta.
Next, the first intermediate layer 43 is formed on the levelling layer by depositing lgm of the same material as the levelling layer across the entire structure surface.
Referring now to Fig. 3(B), the second and third dyed layers 45 and 49 are formed in the same manner on top of the first intermediate layer. The second and third dyed layers are dyed cyan and the yellow respectively.
The second and third intermediate layers 47 and 51 are formed on the second and third dyed layers in the same manner as the first intermediate layer.
As shown in Fig. 3(C), the polyimide or acrylic lens support layer 53 is formed on the third intermediate layer 51. Then the first, second and third lenses 55, 56 and 57 are formed on the lens support layer, corresponding to the first, second, and third photodiodes 32, 33 and 34 respectively. These lenses are formed by thermal processing after exposure and development using a photomask. The lenses are formed with a specified distance of separation to prevent the overlap.
Finally, the respective back-scattering preventing layers 59 are formed by depositing an anti-reflecting 8 material such as xylene or by gas treatment. By forming the back- scattering preventing layers without overlapping the regions in between, the lenses have a predefined curvature. Thus, light incident on the regions between neighbouring lenses can be focussed on the photodiodes 32, 33 and 34. In this way the present invention prevents back-scattering of the incident light and so increases the degree of concentration of incident light reduces the degradation of spectral resolution.
When the back-scattering preventing layers are formed with the appropriate spacing the regions between _neighbouring lenses have a predetermined curvature which improves the sensitivity and spectral resolution of the photodiodes by improving focusing of the light incident on these regions.
The invention is in no way limited ot the embodiment described hereinabove. Various modifications of disclosed embodiment as well as other embodiments of the invention, all within the scope of the invention as defined by the appended claims will become apparent to persons skilled in the art upon reference to this disclosure.
9

Claims (14)

1. A colour filter formed on a semiconductor substrate, the filter comprising:
a levelling layer formed on said semiconductor substrate, at least two intermediate layers formed on said levelling layer, at least two dyed layers respectively formed beneath said intermediate layers, a lens support layer formed on the highest intermediate layer, at least two lenses formed on said lens support layer, and a respective back-scattering preventing layer formed on each of said lenses.
2. A colour filter according to claim 1, wherein adjacent back-scattering preventing layers contact one another.
3. A colour filter according to either preceding claim, wherein said backscattering preventing layers are made of an anti-reflecting material.
4. A colour filter according to any preceding claim, wherein each of said dyed layers is associated with a respective pixel.
5. A colour filter according to claim 4, wherein each of said pixels comprises a photodiode.
6. A method of manufacturing a colour filter on a semiconductor substrate, the method comprising the steps of:
(i) forming a levelling layer on said semiconductor substrate, (ii) forming a dyed layer on said levelling layer and forming an intermediate layer on said dyed layer, (iii) repeating step (ii) on top of the intermediate layer at least once, (iv) forming a lens support layer on the highest intermediate layer, (v) forming at least two lenses on said lens support layer, and (vi) forming respective back-scattering preventing layers on each of said lenses.
7. A method according to claim 6, wherein said _back-scattering preventing layers are made of an anti-reflecting material.
8. The method according to claim 6 or claim 7, wherein said backscattering preventing layers are formed by coating or by chemical vapour deposition.
1
9. A method according to any of claims 6-8, wherein adjacent backscattering preventing layers are formed to contact with one another.
10. A method according to claim 9, wherein said back-scattering preventing layers have a predetermined curvature at their respective regions of contact.
11. A method according to any of claims 6-10, wherein each of said dyed layers is formed to be associated with a respective pixel.
12. A method according to claim 11, wherein each of said pixels comprises a photodiode.
13. A colour filter substantially as hereinbefore described with reference to Figure 2 of the accompanying drawings.
11
14. A method of manufacturing a colour filter, the method being substantially as hereinbefore described with reference to Figures 3(A)3(C) of the accompanying drawings.
GB9113673A 1991-01-10 1991-06-25 Colour filter and its manufacture Expired - Fee Related GB2251721B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910000266A KR920015461A (en) 1991-01-10 1991-01-10 Color filter and its manufacturing method

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GB9113673D0 GB9113673D0 (en) 1991-08-14
GB2251721A true GB2251721A (en) 1992-07-15
GB2251721B GB2251721B (en) 1994-11-16

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5493143A (en) * 1993-07-23 1996-02-20 Nec Corporation Solid color image pickup device
US5534720A (en) * 1994-02-23 1996-07-09 Lg Semicon Co., Ltd. Solid state image sensing element
US20100162813A1 (en) * 2008-12-27 2010-07-01 Hon Hai Precision Industry Co., Ltd. Sensor assembly

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5377046A (en) * 1993-01-21 1994-12-27 Ryan Screen Printing Inc. Indicator viewing angle enhancer
KR100790981B1 (en) * 2006-02-13 2008-01-02 삼성전자주식회사 Color filter, color filter array and fabrication method thereof and image sensor
KR101965529B1 (en) * 2018-04-06 2019-04-03 한양대학교 산학협력단 Dual image sensor including quantum dot layer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0124025A2 (en) * 1983-04-26 1984-11-07 Kabushiki Kaisha Toshiba Solid-state color imaging device and process for fabricating the same
EP0242663A2 (en) * 1986-04-18 1987-10-28 EASTMAN KODAK COMPANY (a New Jersey corporation) Light sensing devices with lenticular pixels

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0642002B2 (en) * 1983-07-29 1994-06-01 セイコーエプソン株式会社 Plastic lens
JPH01246505A (en) * 1988-03-29 1989-10-02 Canon Inc Solid state image pickup element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0124025A2 (en) * 1983-04-26 1984-11-07 Kabushiki Kaisha Toshiba Solid-state color imaging device and process for fabricating the same
EP0242663A2 (en) * 1986-04-18 1987-10-28 EASTMAN KODAK COMPANY (a New Jersey corporation) Light sensing devices with lenticular pixels

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5493143A (en) * 1993-07-23 1996-02-20 Nec Corporation Solid color image pickup device
US5534720A (en) * 1994-02-23 1996-07-09 Lg Semicon Co., Ltd. Solid state image sensing element
US5672519A (en) * 1994-02-23 1997-09-30 Lg Semicon Co., Ltd. Method of fabricating solid state image sensing elements
US20100162813A1 (en) * 2008-12-27 2010-07-01 Hon Hai Precision Industry Co., Ltd. Sensor assembly
US8253242B2 (en) * 2008-12-27 2012-08-28 Hon Hai Precision Industry Co., Ltd. Sensor assembly

Also Published As

Publication number Publication date
GB2251721B (en) 1994-11-16
GB9113673D0 (en) 1991-08-14
KR920015461A (en) 1992-08-26
DE4120966A1 (en) 1992-07-16

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PCNP Patent ceased through non-payment of renewal fee

Effective date: 19950625