GB2247015A - Metal oxide group thermistor material - Google Patents
Metal oxide group thermistor material Download PDFInfo
- Publication number
- GB2247015A GB2247015A GB9116910A GB9116910A GB2247015A GB 2247015 A GB2247015 A GB 2247015A GB 9116910 A GB9116910 A GB 9116910A GB 9116910 A GB9116910 A GB 9116910A GB 2247015 A GB2247015 A GB 2247015A
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- Prior art keywords
- metal oxide
- oxide group
- oxide
- group
- thermistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/043—Oxides or oxidic compounds
- H01C7/046—Iron oxides or ferrites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/043—Oxides or oxidic compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/016—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on manganites
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
- C04B35/265—Compositions containing one or more ferrites of the group comprising manganese or zinc and one or more ferrites of the group comprising nickel, copper or cobalt
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Metal oxide group thermistor material is made from MnCO3 + NiO + CuO + ZnO + Co3O4 + Fe2O3 + TiO2 group as a basic composition and having respectively composition rate by weight for each ingredient as defined in Fig. 1. <IMAGE>
Description
METAL OXIDE GROUP THERMISTOR MATERIAL
The present invention relates to a NTC thermistor material of metal oxide group which is made from LInCO3-NiO-CuO-ZnO- Co304-Ve203-TiO2 as basic composition.
Generally, thermistor is a kind of semiconductors which exhibits very much great and non-linear resistance variation in response to the temperature change, and which is manufactured by mixing oxides of iron F, nickel Ni, manganese Mn, molybdenum Mo, y and cobalt Co and then sintering thereof.
Particularly, metal oxide group thermistor manufactured by combining transition metal oxide is a semiconductor element in which electric resistance is decreased in exponentiai function in response to the temperature change, and since great difference appears to crystal structure and sintering characteristic in accordance with composition of its raw material ingredient or sintering temperature, it exhibits great difference in standard temperature resistance and resistance variation in response to the temperature.
Such metal oxide group thermistor is widely used as a temperature sensing element, temperature compensating and controlling elements, and essential element of various precision measuring and analyzing instrument including voltage controlling element.
For conventional metal oxide group thermistor material, manganese-nickel-cobalt-copper group which is a spinel group and iron-titanium group which is a hematite group are gen erally used, and in case of former spinel group thermistor, it exhibits wide resistance range and great B constant according to the composition, and therefore it is known that it can be widely used. [Ref.: 1. Thermistors (ed. by E.D. Macklen),
Electrochemical Pub., Ayr, Scotland (1979). 2. Semiconducting temperature sensors and their application (ed. by H.B. Sachse),
John and Wiley, New York (1975). 3. Ceramic Materials for electronics (ed. by R.C. Buchanan), Marcel Dekker, New York (1986)]..
However, in case of manganese-nickel-cobalt-copoer group thermistor of this spinel group, since the price of cobalt oxide is very high, it has disadvantage in manufacturing cost, and in case when copper oxide is absorbed, since it acts as harmful material hurting the health, it has problem of generation of environmental pollution in case of manufacturing the thermistor [Ref.: 'dawley's condensed chemical dictionary, 11th edition (ed. by N.L. Sax and R.J. Lewis, Sr), Van Nostrand Reinhold Co., New York (1987)J.
Therefore, it is an object of the present invention to provide a metal oxide group thermistor material in which, as a metal oxide group thermistor material, higher priced cobalt oxide is replaced by lower priced iron oxide and titanium oxide whereby manufacturing cost of thermistor material is decreased while copper oxide being of harmful material is substituted by harmless zinc oxide so that problem of environmental pollution following~upon manufacturing of thermistor material is eliminated, and at the same time liquid phase sintering is induced by eutectic reaction existing in multi-ingredient oxide group whereby sintering temperature is lowered so that thermistor having good characteristic can be manufactured with less manufacturing cost.
FIG. 1 is a tertiary system diagram for illustrating a composition ratio of metal oxide group thermistor material according to the present invention, and
FIG. 2 is a graph for illustrating a relation of resistancetemperature response with respect to a preferred embodiment of the present invention.
The composition of metal oxide group thermistor material of the present invention is made from a manganese carbonate
MnCO3 + b nickel oxide NiO + c copper oxide CuO + dzinc oxide
ZnO + e cobalt oxide Co304 + f iron oxide Fe203 + g titanium oxide TiO2 group as a basic composition, and its composition ratio by weight is as follows: 29#a + b#66
0#c + d#48 0#e + f + g 454 (provided that, a + b + c + d + e + f + g = 100)
When the composition of metal oxide group thermister material of the present invention is expressed by a tertiary ingredient system, it will be as FIG. 1.
Process for manufacturing NTC thermister and the like by utilizing metal oxide group thermister material of the present invention is carried out through oxide mixing method which is widely used in general.
Hereinafter, the manufacturing process of the thermister will be described with reference to a preferred embodiment of the present invention.
Firstly, as mangaese-nickel-zinc-cobalt-iron-titanium group metal oxide as shown in below table 1, composition of a MnCO3 + b NiO + d ZnO + e Co304 + f Fe2O3 ^ g Ti02, in which 27.86#a#49.52, 6.17#b#10.97, d#48.25, e#8.97, 5.08#f#51.14, 0.29#g#3.09 (provided that, a + b + d + e + f + g = 100), and as manganese-nickel-zinc-copper-cobalt iron-titaninm group metal oxide as shown in below table 2, composition of a MNCo3 + b NiO + c CuO + d ZnO + e Co3O4 + f
Fe203 + g TiO2, in which 21.86#a#53.68, 7.14#b#13.56, 0.44#c#50.76, d#35.05, e#30.61, f#38.26, g#7.71 (provided that, a + b + c + d + e + f + g = 100), with which mangnaese carbonate, nickel oxide, copper oxide, zinc oxide, cobalt oxide, iron oxide and titanium oxide are respectively weighed accurately up to 10-4g and then they are mixed and milled sufficiently together with distilled water within zirconia ball mill.
As raw material to be used at this time, compound in which transfer to oxide through calcination process is easy, that is, raw material compound contained with hydroxide and carbonate and the like are also possible.
Sample finished with mixing and milling is calcinated at 75000 - 85000 and then general binding agent such as PVA aqueous solution is added in small quantity and pressed and 2 formed at pressure of 1 ton/cm and thereafter it is placed on alumina piate and sintering is executed within electric furnace at the temperature of 1000 0C-12000C for two hours. Upon sintering, in order to volatilize organic substances including binding agent, it is maintained at 600 0C for one hour, and heating and cooling speed is set at 3000C/hr
Thereafter, silver paste is screen printed on both surfaces of sintered material whereby electrodes are formed and then it is executed by thermal process at 5500" for ten minutes and released for 24 hours and then electrical characteristic is measured. Measuring of electrical ckaracteristic of sample is carried out by means of two-terminal method within a silicone oil thermostat maintained at 250C, and B constant is calculated by expression as followings:
Table 1.Composition and characteristic of manganese-nickelzinc-cobalt-iron-titanium group metal oxide thermistor
Conposi ttoa d chrac- Coiposition (wt - RcsLSLLvity II constant 3interLng X (25 0C) teiperature o o o o o c o o o c o o o o o o o o o o o c o o c t > o o o o t~ t~~ abcdefg (ohi.c.) ( K) ( o(::) Exauple I 3(1.01 6.78 N 47.02 O 14.74 O N O 3493 tISO C Ib LI au ess Cc, Exaspie 4 41.32 9.15 0.00 39.78 0.00 9.38 ('.37 45100385 4858 1200 3 n = ç 5 37.63 8.34 0.00 s t 51.14 2.89 O ~ C v v O tS t. Exanple 6 41.41 *o't 0.00 43.27 0.00 5.08 0.29 6835727 4920 1200 = tZe ~ . OD tX t < e = %1 ç fn f;t t O 4 < ç K 7 h 45.46 t 10.07 0.00 35.93 v w t t fn t 6.14 0.35 347539 4241 v 1200 0 . ~~ 9 35.13 7.75 0.00 39.77 4.17 12.48 0.70 210 2710 1050 ExaIe 10 41.85 9.28 0.00 0.00 4.80 41.86 2.35 68 1482 1050 tV eS = n UA II 40.75 10.89 0.00 1.27 4.08 tN't b't 320835 n 4424 1(150 Exanple 12 41.43 9.16 0.00 1.68 4.80 40.48 2.42 113294 4098 t = Exanpie = 41.18 9.12 0.00 = 2.81 rb C1' 39.59 2.40 844 2218 1(1(10 ExampLe 14 t,-) o 0.0(1 a r-- 4.95 ::19.09 2.50 304 1974 1050 U t 7't ^ X 4 ' t s ~ N v O t t xaaple 2 40.79 f. < 4.23 5.02 38.39 2.53 " 2500 1000 Exanple 16 40.44 8.96 0.0(1 5.60 5.14 37.22 2.58 1587 3249 1050 ç xr 17 39.71 8.79 000 8.56 5.18 34.84 2.72 86 2210 1050 Exainpie o 35.61 7.89 tX; N 0.00 es 48.38 2.73 24544 3755 1050 Exanple 19 38.89 8.fil 0.00 37.44 5.88 8.83 0.35 9817475 4980 1200 Exatiple 28 37.47 8.29 0.00 > , fn 3't 3.08 2611 3354 = 1050 t = O > v K O t LN C n J = Y tS v n n tv O tr Exanpie 21 . 8.28 . . . . . . . .
Exaiple 22 37.38 8.27 O 18.03 5.17 27.12 3.03 22 1004 1050 | 23 37.20 8.23 Ub 19.01 ('.26 26.38 2.92 714712 4394 1050 Exasple 24 s 36.28 m e, own n. a: 0.70 > > 4319689 a: 1200 Example 25 s t v w W W U: Exaiple ç 34.90 a; O 37.96 ea > G 2405281 4687 120(1 Exanpie c 36.62 > o es co 25.08 s 565487 2 1150 Exanpie 28 33.72 . . . . 38.18 8.00 . 0.68 43 1800 1000 C e 29 36.05 7.37 0.00 19.41 8.83 25.00 2.74 263108 4203 1050 O e- n v e a 30 27.80 6.17 0.00 42.81 8.97 13.42 0.77 15688 3723 1050 uZ o c o o o o c o o X o o o oo o o o o o o cS o o o cç o o o c o O c o o = c o o o o = c ç o o o X o o o o o ç o o o o o o o o oo booc oo oooco c oo ooasooo o o ooo U t tp CZ N G O e' t D 5 t O O'; t CQ CO C O t N N N O O 1t to o e O #N w o b tm o t:m cx aw eo e > I::l!i ts e a e 00 e te 1~ tts N e es nz o X a o N N u = zo vn > e ç ax e > v cS > wr rS o X mr v N N N n ED > O X c X a7tIn W~ o ~ ~o o aw C7 v eD e Q t ~ n Y e7 v n ~ v Y v t X n n ~ V tJ / O f ~ eS ffl N s fS es es ev N e k Ut W v C cs C ^ C D- C Cb X C ZL C v X CL r- C C 0. D D- C C o Dw C Pe c O m: r F ffi gil R g fi X i S | G QS c , Z e < e < < e < a Z ff za a Y X Y z tD K X K K K K K K K X X ae K K X be X K > < K X K K X K K K bf K K Table 2.Composition and characteristic of manganese-nickelzinc-copper-cobalt-iron-titanium group metal oxide thermistor
i ti on a clarac- Coiposition (wt X) Resistivity B constant Sintering = > Exaiptes a o C d e G en O (oh..c:u) O O C O O O O O X t ~ o en o 31 u: 10.96 o o o o sn 0.55 3.71 0.28 o o Ln o u: u: 1150 Example 24 C O Oes O N O O CK O X OO 0 b4 s z Pu | r O)u I J Exap'e n 46.98 10.24 8.40 31.16 0.00 3.04 0.18 332223 430 1150 Example 37 47.28 10.49 9.02 30.20 0.00 2.85 0.16 43196WJ 4583 1200 a D t v t w 47.72 10.58 9.95 29.03 0.1)0 2.57 0.15 6978 3753 1050 U -- 40 48.25 10.70 10.56 26.95 1.33 2.13 0.08 11388271 4682 1200 Exaiple 41 49.13 10.89 11.83 23.25 3.65 1.37 0.08 1628 2300 1000 Ezanple t0 48.32 O CK n 0% 22.04 =o N 00 N X X 0.08 L0 e 2784 F 40 sr W e eo CX) IC 100(1 Example t4 47.25 10.47 13.05 20.50 7.81 0.87 ('.05 939532 4546 1200 Example " 43.88 N u: c: N es 9.72 15.58 15.58 15.24 0.00 un v :n au o m N X, .~ .n t : o o a v N N oo o uo Exaiple N 48.44 N 17.42 " w o s = N X CLC Example 47 In 8.34 ar 18.14 17.72 u: (1.0(1 214021 4280 1150 Exairple 48 51.76 11.47 18.38 18.39 0.00 0.00 0.00 74 o 1000 O O O CJ O 51.62 B 18.57 9.27 G Q 0.37 292 1990 O Q O O z tw DS O ' 1000 Example 50 48.79 10.83 18.82 8.00 9.IL 11.81 0.06 149262125 5260 1200 n O N v v = F > er tw c O ar > O O tr o O > s7 > o ev O Exainple 51 51.72 O 19.95 O N 05 3.76 12.38 > 53722325 4998 1200 example . - . . . . . . 20.28 0.00 . . . . . . . . . . 1150 Example 53 42.81 o o 20.62 eD 0.00 N ç O tw 4571 120(1 In ç e O 42.29 9.37 20.63 es 9.72 7.27 U; 2059706 4532 1200 Example 55 53.68 > 20.71 > O 12.99 O 6479534 O O O C Erample 56 44.43 rs r > o e4 7.64 0.42 1963495 4692 1200 9 57 41.53 13.56 22.00 10.99 0.00 7.75 ., 216377 4120 1150 Example z 45.77 10.14 22.04 0X 0 l+.34 o 1615956 4611 O O Example 59 21.93 7.10 30.49 0.00 O 38.26 2.16 60868 1441 1150 a t t t = o ffl 34.11 17.06 o C3 O 0.00 cn Y 75595 3920 1150 O y n fq n to n en es es ev N N N ~ ~ N Example 61 21.92 7.16 40.63 0.00 0.00 28.67 1.62 85216 3933 1150 SS o t es 62 > 7.15 50.76 e 0.00 > W 53905 3961 ~ e o w C t e e O a; o ID t e w o o c v S ev i O o o t o o ~ N n In F > w es o o o o ~ o4 es o t o o ço ur X e er t aw e z o on o > ~ z va o es f o a . 4 a l o a o a a tD s a O a Oo ~ ~ ç tw e G tF to n 0 e t e W 0 n N X e t eQ ED U: b4 ç e es e rW e o ew O wr w 07 tr ~ o N ew e ~ en W s t ~ tD b B7 rX F X X e4 tD z = ten so = CZ < UW tD s rw rw e e co > X e o eu Q Q B: P z / n z X > s O n z X X F X O N s ~ = s > X ç O N u o X o X Q @ a; X qX t X X X X aa Q 4) X oJ Ç Q ep X X X ç @ X qJ Q X ç v Q- 0 CL C v CL 3 0e X Nl C C 0S a t X S X a S a fl 5 X 3 a X S Z G a e K K K X F1 be K K K pt K K K be > 4 14 K K b1 K K K be K X R be H K 4 X S FIG. 2 is a graph for illustrating relation between resistance and temperature of metal oxide group thermistor made from composition of examples of the present invention shown in above table 1 and table 2.
The metal oxide group thermistor of the present invention obtained through suc'n manufacturing process wears a spinel structure, and it can be understood that even if iron oxide together with titanium oxide are added in considerable amount as shown in above table 1, they are sufficiently molten in solid state and thereby it is possible to manufacture excellent thermistor having wide resistance range.
Therefore, the metal oxide group thermistor material of the present invention has advantage that whole or most part of expensive cobalt oxide is replaced by cheap iron oxide and titanium oxide and thereby not only manufacturing expense of thermistor can e reduced but also use of copper oxide which operates as a harmful substance upon manufacturing of the thermistor is excluded so that safety of manufacturing work can be obtained.
And, in case when copper oxide is added as shown in table 2, adding quantity of iron oxide and titanium oxide can be greatly changed, and therefore resistance range can be widely controlled, and B constant can be raised up.
On the other hand, the metal oxide group thermistor material of the present invention is multiple ingredient group composition, and since sintering is executed at 10000C-12000C by mutual eutectic reaction, the sintering temperature can be lowered as much as about 1000C - 250 0C relative to the sintering temperature of conventional manganese-nickel-cobaltcopper group thermistor, and therefore there is advantage that manufacturing expense of the thermistor can be reduced.
Claims (1)
- CLAIMS:1. Metal oxide group thermistor material having a basic composition of a MnCO3 + b NiO + c CuO + d ZnO + e CO3O4 + f Fe2O3 + g TiO2 and the following composition ratio by weight:21.86 < a < 53.686.17 < b < 13.56 c < 50.76 d < 48 e < 30.61 f < 51.14 g < 7.71 (provided that, a + b + c + d + e + f + g = 100) 2. Metal oxide group thermistor material as claimed in claim 1, wherein the compositon ratio by weight is:27.86 < a < 49.526.17 < b < 10.97 c = O d < 48.25 e < 8.975.08 < f < 51.14 0.29 < g < 3.09 3. Metal oxide group thermistor material as claimed in claim 1, wherein the composition ratio by weight is:21.86 < a < 53.687.14 < b < 13.56 0.44 < c < 50.76 d < 35.05 e < 30.61 f < 38.26 g < 7.71 4. A thermistor having a metal oxide group thermistor material according to any one of claims 1 to 3.5. A metal oxide group thermistor material substantially as hereinbefore described with reference to the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900012585A KR930005249B1 (en) | 1990-08-16 | 1990-08-16 | Metal-oxide system thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9116910D0 GB9116910D0 (en) | 1991-09-18 |
| GB2247015A true GB2247015A (en) | 1992-02-19 |
Family
ID=19302379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9116910A Withdrawn GB2247015A (en) | 1990-08-16 | 1991-08-06 | Metal oxide group thermistor material |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2913518B2 (en) |
| KR (2) | KR930005249B1 (en) |
| GB (1) | GB2247015A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4292057B2 (en) * | 2003-11-13 | 2009-07-08 | Ｔｄｋ株式会社 | Thermistor composition and thermistor element |
| CN102290174A (en) | 2005-02-08 | 2011-12-21 | 株式会社村田制作所 | Surface mounting-type negative characteristic thermistor |
| JP2008060612A (en) * | 2005-02-08 | 2008-03-13 | Murata Mfg Co Ltd | Surface mounting-type negative temperature coefficient thermistor |
| CN102686532B (en) | 2010-01-12 | 2014-05-28 | 株式会社村田制作所 | Semiconductor ceramic composition for NTC thermistors and NTC thermistor |
| DE102010024863B4 (en) | 2010-06-24 | 2012-03-08 | Epcos Ag | Non-cobalt NTC ceramic, process for making a cobalt-free NTC ceramic and its use |
| CN111484314B (en) * | 2020-04-03 | 2022-07-01 | 广东风华高新科技股份有限公司 | NTC thermal sensitive ceramic material and preparation method thereof |
| CN114999752B (en) * | 2022-05-27 | 2024-07-19 | 广东新成科技实业有限公司 | NTC patch thermistor based on semiconductor material and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1138719A (en) * | 1966-10-05 | 1969-01-01 | Philips Electronic Associated | Ceramic resistance bodies |
| JPS56114859A (en) * | 1980-02-07 | 1981-09-09 | Matsushita Electric Ind Co Ltd | Manufacture of oxide semiconductor for thermistor |
| JPS56160007A (en) * | 1980-05-13 | 1981-12-09 | Matsushita Electric Ind Co Ltd | Method of manufacturing oxide semiconductor for thermistor |
| EP0206885A1 (en) * | 1985-06-04 | 1986-12-30 | Universite Paul Sabatier (Toulouse Iii) | Composition of manganites of transition metals in the form of particles or in the form of ceramics, its preparation and its use in the manufacture of thermistors |
| EP0249229A2 (en) * | 1986-06-12 | 1987-12-16 | BASF Aktiengesellschaft | Superparamagnetic solid particles |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5833681B2 (en) * | 1979-08-29 | 1983-07-21 | 日本電信電話株式会社 | High frequency thermistor porcelain |
| JPS6412501A (en) * | 1987-07-07 | 1989-01-17 | Matsushita Electric Ind Co Ltd | Manufacture of oxide semiconductor for thermistor |
-
1990
- 1990-08-16 KR KR1019900012585A patent/KR930005249B1/en not_active IP Right Cessation
-
1991
- 1991-02-08 JP JP3017621A patent/JP2913518B2/en not_active Expired - Fee Related
- 1991-08-06 GB GB9116910A patent/GB2247015A/en not_active Withdrawn
-
1993
- 1993-05-13 KR KR1019930008241A patent/KR930006337B1/en not_active IP Right Cessation
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1138719A (en) * | 1966-10-05 | 1969-01-01 | Philips Electronic Associated | Ceramic resistance bodies |
| JPS56114859A (en) * | 1980-02-07 | 1981-09-09 | Matsushita Electric Ind Co Ltd | Manufacture of oxide semiconductor for thermistor |
| JPS56160007A (en) * | 1980-05-13 | 1981-12-09 | Matsushita Electric Ind Co Ltd | Method of manufacturing oxide semiconductor for thermistor |
| EP0206885A1 (en) * | 1985-06-04 | 1986-12-30 | Universite Paul Sabatier (Toulouse Iii) | Composition of manganites of transition metals in the form of particles or in the form of ceramics, its preparation and its use in the manufacture of thermistors |
| US4840925A (en) * | 1985-06-04 | 1989-06-20 | Universite Paul Sabatier (Toulouse Iii) | Compositions of transition metal manganites in the form of particles or ceramics, their preparation and their use in the production of thermistors |
| EP0249229A2 (en) * | 1986-06-12 | 1987-12-16 | BASF Aktiengesellschaft | Superparamagnetic solid particles |
| US4810401A (en) * | 1986-06-12 | 1989-03-07 | Basf Aktiengesellschaft | Superparamagnetic solid particles |
Also Published As
| Publication number | Publication date |
|---|---|
| KR920004300A (en) | 1992-03-27 |
| KR930006337B1 (en) | 1993-07-14 |
| JPH0541304A (en) | 1993-02-19 |
| KR930005249B1 (en) | 1993-06-17 |
| JP2913518B2 (en) | 1999-06-28 |
| GB9116910D0 (en) | 1991-09-18 |
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