GB2231718B - A dynamic random access memory cell and method of making the same - Google Patents
A dynamic random access memory cell and method of making the sameInfo
- Publication number
- GB2231718B GB2231718B GB8926627A GB8926627A GB2231718B GB 2231718 B GB2231718 B GB 2231718B GB 8926627 A GB8926627 A GB 8926627A GB 8926627 A GB8926627 A GB 8926627A GB 2231718 B GB2231718 B GB 2231718B
- Authority
- GB
- United Kingdom
- Prior art keywords
- making
- memory cell
- same
- random access
- access memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890006720A KR920010695B1 (en) | 1989-05-19 | 1989-05-19 | D-ram cell and its manufacturing method |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8926627D0 GB8926627D0 (en) | 1990-01-17 |
GB2231718A GB2231718A (en) | 1990-11-21 |
GB2231718B true GB2231718B (en) | 1993-05-26 |
Family
ID=19286319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8926627A Expired - Fee Related GB2231718B (en) | 1989-05-19 | 1989-11-24 | A dynamic random access memory cell and method of making the same |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH0715949B2 (en) |
KR (1) | KR920010695B1 (en) |
DE (1) | DE3927176A1 (en) |
FR (1) | FR2647267B1 (en) |
GB (1) | GB2231718B (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5185284A (en) * | 1989-05-22 | 1993-02-09 | Mitsubishi Denki Kabushiki Kaisha | Method of making a semiconductor memory device |
KR910013554A (en) * | 1989-12-08 | 1991-08-08 | 김광호 | Semiconductor device and manufacturing method thereof |
JPH03200366A (en) * | 1989-12-27 | 1991-09-02 | Nec Corp | Semiconductor device and manufacture thereof |
JPH03278573A (en) * | 1990-03-28 | 1991-12-10 | Mitsubishi Electric Corp | Semiconductor memory device |
KR930007194B1 (en) * | 1990-08-14 | 1993-07-31 | 삼성전자 주식회사 | Semiconductor device and its manufacturing method |
US5272103A (en) * | 1991-02-08 | 1993-12-21 | Mitsubishi Denki Kabushiki Kaisha | DRAM having a large dielectric breakdown voltage between an adjacent conductive layer and a capacitor electrode and method of manufacture thereof |
JP2748050B2 (en) * | 1991-02-08 | 1998-05-06 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
US5208177A (en) * | 1992-02-07 | 1993-05-04 | Micron Technology, Inc. | Local field enhancement for better programmability of antifuse PROM |
JPH11145414A (en) * | 1997-09-04 | 1999-05-28 | Toshiba Corp | Semiconductor device |
KR100689514B1 (en) | 2006-01-23 | 2007-03-02 | 주식회사 하이닉스반도체 | Semiconductor device and method for fabricating the same |
CN112750899B (en) * | 2019-10-31 | 2022-05-27 | 广东美的白色家电技术创新中心有限公司 | Semiconductor device, preparation method thereof and electrical equipment |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0085988A2 (en) * | 1982-02-10 | 1983-08-17 | Hitachi, Ltd. | Semiconductor memory and method for fabricating the same |
EP0154871A2 (en) * | 1984-03-12 | 1985-09-18 | Hitachi, Ltd. | One-transistor dynamic random-access memory |
EP0169938A1 (en) * | 1983-12-15 | 1986-02-05 | Kabushiki Kaisha Toshiba | Semiconductor memory device having trenched capacitor |
GB2197534A (en) * | 1986-11-12 | 1988-05-18 | Mitsubishi Electric Corp | Semiconductor integrated circuit capacitor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62120070A (en) * | 1985-11-20 | 1987-06-01 | Toshiba Corp | Semiconductor memory |
JPH01119053A (en) * | 1987-10-31 | 1989-05-11 | Sony Corp | Semiconductor memory device |
JP2548957B2 (en) * | 1987-11-05 | 1996-10-30 | 富士通株式会社 | Method for manufacturing semiconductor memory device |
-
1989
- 1989-05-19 KR KR1019890006720A patent/KR920010695B1/en not_active IP Right Cessation
- 1989-08-17 DE DE3927176A patent/DE3927176A1/en active Granted
- 1989-08-30 JP JP1221888A patent/JPH0715949B2/en not_active Expired - Fee Related
- 1989-09-07 FR FR8911703A patent/FR2647267B1/en not_active Expired - Lifetime
- 1989-11-24 GB GB8926627A patent/GB2231718B/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0085988A2 (en) * | 1982-02-10 | 1983-08-17 | Hitachi, Ltd. | Semiconductor memory and method for fabricating the same |
EP0169938A1 (en) * | 1983-12-15 | 1986-02-05 | Kabushiki Kaisha Toshiba | Semiconductor memory device having trenched capacitor |
EP0154871A2 (en) * | 1984-03-12 | 1985-09-18 | Hitachi, Ltd. | One-transistor dynamic random-access memory |
GB2197534A (en) * | 1986-11-12 | 1988-05-18 | Mitsubishi Electric Corp | Semiconductor integrated circuit capacitor |
Also Published As
Publication number | Publication date |
---|---|
FR2647267B1 (en) | 1995-03-10 |
FR2647267A1 (en) | 1990-11-23 |
JPH02312270A (en) | 1990-12-27 |
DE3927176A1 (en) | 1990-11-22 |
KR920010695B1 (en) | 1992-12-12 |
GB8926627D0 (en) | 1990-01-17 |
KR900019141A (en) | 1990-12-24 |
DE3927176C2 (en) | 1992-03-26 |
GB2231718A (en) | 1990-11-21 |
JPH0715949B2 (en) | 1995-02-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20081124 |