GB2230137B - Improvements in or relating to electronic devices - Google Patents
Improvements in or relating to electronic devicesInfo
- Publication number
- GB2230137B GB2230137B GB9006305A GB9006305A GB2230137B GB 2230137 B GB2230137 B GB 2230137B GB 9006305 A GB9006305 A GB 9006305A GB 9006305 A GB9006305 A GB 9006305A GB 2230137 B GB2230137 B GB 2230137B
- Authority
- GB
- United Kingdom
- Prior art keywords
- relating
- electronic devices
- electronic
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma & Fusion (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB898907323A GB8907323D0 (en) | 1989-03-31 | 1989-03-31 | Improvements in or relating to electronic devices |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9006305D0 GB9006305D0 (en) | 1990-05-16 |
GB2230137A GB2230137A (en) | 1990-10-10 |
GB2230137B true GB2230137B (en) | 1993-03-31 |
Family
ID=10654280
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB898907323A Pending GB8907323D0 (en) | 1989-03-31 | 1989-03-31 | Improvements in or relating to electronic devices |
GB9006305A Expired - Fee Related GB2230137B (en) | 1989-03-31 | 1990-03-21 | Improvements in or relating to electronic devices |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB898907323A Pending GB8907323D0 (en) | 1989-03-31 | 1989-03-31 | Improvements in or relating to electronic devices |
Country Status (1)
Country | Link |
---|---|
GB (2) | GB8907323D0 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5615207B2 (en) * | 2011-03-03 | 2014-10-29 | 株式会社東芝 | Manufacturing method of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4359367A (en) * | 1980-06-25 | 1982-11-16 | Governing Council Of The University Of Toronto | Silicon-based semiconductor devices |
-
1989
- 1989-03-31 GB GB898907323A patent/GB8907323D0/en active Pending
-
1990
- 1990-03-21 GB GB9006305A patent/GB2230137B/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4359367A (en) * | 1980-06-25 | 1982-11-16 | Governing Council Of The University Of Toronto | Silicon-based semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
GB8907323D0 (en) | 1989-05-17 |
GB2230137A (en) | 1990-10-10 |
GB9006305D0 (en) | 1990-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19990321 |