GB2195050B - Semiconductor devices and methods of manufacture - Google Patents

Semiconductor devices and methods of manufacture

Info

Publication number
GB2195050B
GB2195050B GB8719817A GB8719817A GB2195050B GB 2195050 B GB2195050 B GB 2195050B GB 8719817 A GB8719817 A GB 8719817A GB 8719817 A GB8719817 A GB 8719817A GB 2195050 B GB2195050 B GB 2195050B
Authority
GB
United Kingdom
Prior art keywords
manufacture
methods
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8719817A
Other versions
GB8719817D0 (en
GB2195050A (en
Inventor
Koushi Tamamura
Katsuhiro Akimoto
Junko Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB8719817D0 publication Critical patent/GB8719817D0/en
Publication of GB2195050A publication Critical patent/GB2195050A/en
Application granted granted Critical
Publication of GB2195050B publication Critical patent/GB2195050B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
GB8719817A 1986-08-28 1987-08-21 Semiconductor devices and methods of manufacture Expired - Lifetime GB2195050B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61202110A JPH0783109B2 (en) 1986-08-28 1986-08-28 High-speed semiconductor device

Publications (3)

Publication Number Publication Date
GB8719817D0 GB8719817D0 (en) 1987-09-30
GB2195050A GB2195050A (en) 1988-03-23
GB2195050B true GB2195050B (en) 1990-05-30

Family

ID=16452126

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8719817A Expired - Lifetime GB2195050B (en) 1986-08-28 1987-08-21 Semiconductor devices and methods of manufacture

Country Status (5)

Country Link
JP (1) JPH0783109B2 (en)
KR (1) KR950014278B1 (en)
DE (1) DE3728524C2 (en)
FR (1) FR2611313A1 (en)
GB (1) GB2195050B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910007414B1 (en) * 1989-03-18 1991-09-25 재단법인 한국전자통신연구소 Hetero structure compound semiconductor device with improving doping effect
JPH03278542A (en) * 1990-03-28 1991-12-10 Hitachi Ltd Semiconductor device
EP0535293A1 (en) * 1991-01-29 1993-04-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. A method of fabricating a compositional semiconductor device
JP3360105B2 (en) * 1994-03-04 2002-12-24 富士通株式会社 Method for manufacturing semiconductor device
WO2008063704A2 (en) 2006-05-03 2008-05-29 Rochester Institute Of Technology Nanostructured quantum dots or dashes in photovoltaic devices and methods thereof
JP2010225981A (en) 2009-03-25 2010-10-07 Fujitsu Ltd Optical semiconductor device, integrated element and method of manufacturing optical semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1198559A (en) * 1967-12-28 1970-07-15 Tokyo Shibaura Electric Co Semiconductor Device.
US3721583A (en) * 1970-12-08 1973-03-20 Ibm Vapor phase epitaxial deposition process for forming superlattice structure
GB1570407A (en) * 1976-04-06 1980-07-02 Ibm Semiconductor device and process for preparation

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52101698A (en) * 1976-02-23 1977-08-25 Toshiba Corp Vapor phase growth of gallium arsenide

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1198559A (en) * 1967-12-28 1970-07-15 Tokyo Shibaura Electric Co Semiconductor Device.
US3636421A (en) * 1967-12-28 1972-01-18 Tokyo Shibaura Electric Co Oxide coated semiconductor device having (311) planar face
US3721583A (en) * 1970-12-08 1973-03-20 Ibm Vapor phase epitaxial deposition process for forming superlattice structure
GB1570407A (en) * 1976-04-06 1980-07-02 Ibm Semiconductor device and process for preparation

Also Published As

Publication number Publication date
GB8719817D0 (en) 1987-09-30
DE3728524C2 (en) 1996-05-09
KR880003401A (en) 1988-05-16
DE3728524A1 (en) 1988-03-10
FR2611313A1 (en) 1988-08-26
KR950014278B1 (en) 1995-11-24
JPH0783109B2 (en) 1995-09-06
JPS6356960A (en) 1988-03-11
GB2195050A (en) 1988-03-23

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20070820