GB2177639A - Ultrasonic wire bonder and method of manufacturing a semiconductor therewith - Google Patents

Ultrasonic wire bonder and method of manufacturing a semiconductor therewith Download PDF

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Publication number
GB2177639A
GB2177639A GB08517231A GB8517231A GB2177639A GB 2177639 A GB2177639 A GB 2177639A GB 08517231 A GB08517231 A GB 08517231A GB 8517231 A GB8517231 A GB 8517231A GB 2177639 A GB2177639 A GB 2177639A
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United Kingdom
Prior art keywords
bonding
wires
wire
contact area
bonder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB08517231A
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GB2177639B (en
GB8517231D0 (en
Inventor
William Ardern
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
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Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Priority to GB08517231A priority Critical patent/GB2177639B/en
Publication of GB8517231D0 publication Critical patent/GB8517231D0/en
Publication of GB2177639A publication Critical patent/GB2177639A/en
Application granted granted Critical
Publication of GB2177639B publication Critical patent/GB2177639B/en
Expired legal-status Critical Current

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • B23K20/106—Features related to sonotrodes
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Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

The bonder is provided with a single bonding head 10 which has two bonding wedges and grooves for location of wires W1, W2 under the wedges and two guides through a tongue 10A at the rear of the bonding head. It is used to perform the simultaneous bonding of two connecting wires on the contact area 2 of a semiconductor device 3 and on a conductor 5 associated with the contact area. The bonding time required for two wires of a given diameter is the same as that required to bond a single wire of the same diameter, thus twin connecting wires may be provided in half the bonding cycle time and the wire spacing is accurately determined without operator intervention. The bonder is of particular use in the manufacture of triac devices where the wires can be accurately spaced one over a first sector, the other over a second sector of the triac structure, on a contact area common to both sectors of the triac. <IMAGE>

Description

SPECIFICATION Ultrasonic wire bonder and method of manufacturing a semiconductor device therewith The invention relates to an ultrasonic wire bonder for use in semiconductor device manufacture and also relates to a method of manufacturing a semiconductor device therewith.
The use of ultrasonic wire bonding to bond a connecting wire between a contact area on a semiconductor body and an associated conductor is a well established process in the manufacture of semiconductor devices. Known bonders are provided with a single bonding head and associated means for the supply and guidance of a single wire to the bonding head, the bonder being capable of making a single bond between the single wire and either the contact area on the semiconductor body or an associated conductor.
With certain semiconductor devices it is desirable to provide multiple connecting wires between a contact area and an associated conductor. Where those semiconductor devices are power semiconductor devices the multiple, usually twin, connecting wires give improved current spreading between the connecting wires and the contact area in comparison to a single wire. The provision of twin connecting wires to connect a contact area to an associated conductor with a known ultrasonic bonder has required the bonder either to bond the first connecting wire to the contact area and the associated conductor and then sequentially the second connecting wire or has required the sequential use of two bonders to bond the first connecting wire, and then the second. Both these methods result in an increased device test failure rate in comparison to single wire connected devices.First, where both wires are bonded sequentially by the same bonder considerable bonder operator skill is required to ensure the connecting wires are correctly positioned and second where the second wire is bonded by a second bonder, the handling of the device to prepare it for the bonding of the second connecting wire has been shown by the inventor to lead to increased device faults.
According to a first aspect of the invention, there is provided an ultrasonic bonder for use in semiconductor device manufacture, the bonder including a bonding head, means for providing a static bonding force to the bonding head, means for storing wire and means for guiding said wire to the bonding head characterised in that the bonder includes means for storing two wires and said bonding head includes a first and a second guide means to guide a wire to each of a first bonding wedge and a second bonding wedge provided one said bonding head.
An ultrasonic bonder in accordance with the invention is capable of simultaneously bonding two wires. Thus where a twin wire connection is required between a contact area and an associated conductor, the connection is made in two bonder operations, one for the twin wires bonded on the contact area the other for the twin wires bonded on the associated conductor.
The separation of the wires on the device contact area and the associated conductor are fixed by the separation of bonding grooves provided in the bonding wedges and the device receives its twin connecting wires in one pass through a bonder thus reducing device test failure rate.
According to a second aspect of the invention, there is provided a method of making a semiconductor device including the steps of ultrasonically bonding a first and a second wire to a contact area and an associated conductor, to provide two connecting wires between the contact area and the associated conductor, characterised in that the step of ultrasonically bonding the connecting wires comprises the simultaneous ultrasonic bonding of the first and second connecting wires to the contact area and the simultaneous bonding of the first and second connecting wires to said conductor associated with said contact area.
According to a third aspect of the invention, there is provided a semiconductor device manufactured by a method which includes the steps of simultaneously bonding a first and a second connecting wire to a contact area and simultaneously bonding a first and a second connecting wire to a conductor associated with said contact area.
The semiconductor device may be a bidirectionally conducting device, for example a triac, and the contact area is common to a first and a second sector of the device, the first connecting wire being bonded to the contact area overlying the first sector and the second connecting wire to the contact area overlying the second sector, the wires being bonded symmetrically about the division between the first and second sectors.
Embodiments of the invention will now be described by way of example only with reference to the accompanying drawings, in which; Figure 1 shows schematically an oblique view of an ultrosonic twin-wire bonder in accordance with the invention.
Figure 2 shows schematically a twin bonding tip in an enlarged view of part of Figure 1.
Figure 3 shows schematically a triac in the manufacture of which an ultrasonic twin-wire bonder has been used.
In Figure 1 the ultrasonic twin-wire bonder indicated by arrow 1 is shown carrying out the step of providing twin connecting wires W1, W2 between a contact area 2 on a semiconductor body 3. The conductor 4 associated with the contact area will have the connecting wires bonded to it at C1 and C2. The conductor 4 is formed as part of a lead frame 5 from which a second conductor 6 also extends. The second conductor is connected to the lower surface of the semiconductor body 3 via a copper upper surface 7 of copper-ceramic-copper sandwich 8 and bridge 9, the bridge 9 being soldered to the second conductor 6 and the copper upper surface 7.
The bonding head 10 is connected to an ultrasonic transducer 11 which receives ultrasonic frequency signals via leads 11A from an external signal generator (not shown). The head and the transducer are supported on arm 12 which pivots about an axis 13. A compressed air operated piston and cylinder assembly 14 is connected to arm 12 at the opposite end to the ultrasonic transducer 11. The provision of compressed air to pipes 15 from a control system (not shown) is used to raise or lower the bonding head as required in the direction shown as double headed arrow Z and provide a static bonding force dependent on the hardeness of wire to be bonded.The bonding head, ultrasonic transducer, arm and piston and cylinder are carried on and are relatively movable within a frame (not shown) and are connected to the frame by means including further compressed air operated piston and cylinder assemblies to provide motion of the bonding head 10 in the directions as indicated by double headed arrows X and Y. The frame also carries two reels 16, 17 of wire. The wires are guided to the bonding head via a ring 18 and a compressed air operated wire clamp 19 which is operated by a control system (not shown) from compressed air line 20. Further guidance of the wires W1 and W2 to a first Al and second A2 bonding wedges is shown in Figure 2. The guidance is provided by holes H1 and H2 bored through tongue 10A of the bonding head.The bonding wedges have grooves S1 and S2 to locate the wires and to prevent overcompression of the wires during bonding. The separation of the grooves S1 and S2 is dependent on the size of the contact area to which the wires are to be bonded.
The inventor has constructed and tested bonding heads with groove separations in the range 0.4 to 2mm for use with connecting wires of 250 microns diameter, the preferred radius of the groove being 200 microns.
The sequence of operations required to provide the twin connecting wires between the contact area 2 and the associated conductor 4 include feeding the lead frame so that the device it carries is in the appropriate position under the bonding head, applying a static compressive force to the wires between the wedges and the contact area, applying and removing the ultrasonic motion, removing the static force, repositioning the bonding head over the required part of the associated conductor by a combination of X, Y and Z motions, applying static force to compress the wires between the anvils and the associated conductor, applying and removing the ultrasonic motion, removing the static force, moving the bonding head so the wires rest on the associated conductor and parting the wires between the bonding head and the bonds on the associated conductor.The wires are parted by a compressed air operated blade 21 moving downwards to cut the wires using the associated conductor as a chopping block. The blade movement is controlled by piston and cylinder 22 operated by a control system (not shown) via compressed air line 23. The blade 21 is operated at the same time as clamp 19, the clamp assisting to resist the pull of the wire as it is parted to prevent the wire being dislodged from slots S1 and S2. The clamp remains operated while the bonding head is moved to take up position over the next device contact area, to pull wire from the reels as the head moves.
The contact area 2 may be a delineated area of the surface of the semiconductor body or a silicon metal alloy area or a metallised area. For power device production, aluminium may be used for the metallisation. The wires W1 and W2 may be of pure aluminium or aluminium-silicon alloy. For power device production aluminium-1% silicon alloy wire may be used. The associated conductor may be aluminium, copper or nickel plated copper.
The static force and period of ultrasonic motion required for successful bonding depends on the materials to be bonded and the diameter of the wire.
For example twin 250 micron diameter wires of 1% silicon in aluminium may be bonded with a static load in the range 11.75 to 14.75N, dependent on the hardness of the wire and an ultrasonic motion period of 150 msec, the total bond time being 180 msec. The time required to complete the twin wire connections is 400 msec this time including the time required to part the wires at the end of the bonding process. For comparison a single wire bonder would take 400 msec to complete a single wire connection. Thus the twin-wire bonder can halve the time for bonding two connecting wires between an associated conductor and a contact area, and provide a fixed spacing between the bonded wires.
Figure 3 shows a step in the manufacture of a triac at which a gate connecting wire 30 and twin cathode connecting wires 31,32 have been provided. The gate connecting wire 30 has been bonded at the gate header 33 and the gate metallisation 34 by a single wire ultrasonic bonder. The cathode connecting wires 31, 32 have been bonded by an ultrasonic twin-wire bonder in accordance with a first aspect of the invention to the cathode metallisation 35 and to the cathode header 36. The cathode and gate headers and heatsink 37 are formed as part of a lead frame (not shown) which, after encapsulation of the triac, will be cropped to provide separate connecting leads to the headers.
The semiconductor body 38 which forms the triac is divided by virtue of the layers of different conductivity type into sectors A and B either side of dashed line 40. The metallisation 35 is common to both quadrants. Connecting wire 31 is bonded at 41 to the metallisation to make contact with sector A and wire 32 is bonded at 42 to the metallisation to make contact with sector B. The sectors A and B form a conducting path through the triac for each half of an A.C. cycle. It is of advantage to the operation of the triac that a connecting wire is associated with each sector to ensure correct current spreading to the metallisation at each half of the A.C. cycle. With a single wire bonder this has not been possible without the intervention of a skilled bonder operator to align the bonds with the metallisation and with each other. With a simultanoues bonding of two connecting wires only one alignment of the bonding head is required, representing a considerable saving in bonder operator time and allowing a relatively unskilled operator to be used.
The bonding process may proceed automatically with devices carried beneath the bonding head on a transfer mechanism; the transfer mechanism is required to hold the devices so that the positions of bonds 41 and 42 are less than 15 microns out of horizontal when bonding twin 250 micron diameter connecting wires.
Bonders may incorporate both a twin bonding head for the connection of high current carrying leads of 250 micron diameter to, for example transistor emitter contacts, GTO, thyristor and triac cathode contacts, and a single bonding head for the connection of leads to, for example transistor base contacts and GTO, thyristor and triac gate contacts. Such bonders may also include pattern recognition apparatus to permit the accurate alignment of the bonding heads without operator intervention.

Claims (15)

1. An ultrasonic bonder for use in semiconductor device manufacture, the bonder including a bonding head, means for providing a static bonding force and ultrasonic motion to the bonding head, means for storing wire and means for guiding said wire to the bonding head characterised in that the bonder includes means for storing two wires, and said bonding head includes a first and a second guide means to guide a wire to each of a first bonding wedge and a second bonding wedge provided on said bonding head.
2. An ultrasonic bonder as claimed in Claim 1, in which the means for providing a static bonding force is able to provide a force in the range 11.75 to 14.75N.
3. An ultrasonic bonder as claimed in Claim 1 or Claim 2, in which a groove is provided in the first anvil and the second anvil and the grooves are at a separation in the range 0.4 to 2.0mm.
4. An ultrasonic bonder as claimed in Claim 1, Claim 2 or Claim 3, in which the first and second guide means each include a hole through a tongue on the bonding head.
5. An ultrasonic bonder as claimed in Claims 2,3 or 4, in which the wire to be bonded is 250 microns in diameter and the groove radius is 200 microns.
6. A method of making a semiconductor device including the steps of ultrasonically bonding a first and a second wire to a contact area and an associated conductor to provide two connecting wires between the contact area and the associated conductor, characterised in that the steps of ultrasonically bonding the connecting wires include the simultaneous ultrasonic bonding of the first and second wires to the contact area and the simultaneous bonding of the first and second wires to the conductor associated with said contact area by means of an ultrasonic bonder having a bonding head adapted for the simultaneous bonding of two wires.
7. A method as claimed in Claim 5, in which the wires are bonded at a separation in the range 0.4 to 2.0mm.
8. A method as claimed in Claims 5 or 6, in which the first and second wires are of the same diameter.
9. A method as claimed in Claims 5, 6 or 7, in which the wires are of pure aluminium or an aluminium silicon alloy.
10. A method as claimed in Claim 8, in which the wires are an alloy of 1% silicon in aluminium.
11. A method as claimed in Claims 5,6,7,8 or 9, in which the bonding step includes the application of a static force in the range 11.75 to 14.75N to the wires by the bonding head.
12. A method as claimed in claims 5,6,7,8,9 or 10, in which the semiconductor device is a bidirectionally conducting device and the contact area is common to a first and a second sector of the device, and the first connecting wire is bonded to the contact area overlying the first sector and the second connecting wire being bonded to the contact area overlying the second sector.
13. A semiconductor device manufactured by a method as claimed in Claim 3.
14. An ultrasonic bonder substantially as hereinbefore described with reference to Figures 1 and 2.
15. A method of making semiconductor device substantially as hereinbefore described with reference to Figures 1 and 2 or to Figure 3.
GB08517231A 1985-07-08 1985-07-08 Ultrasonic wire bonder and method of manufacturing a semiconductor device therewith Expired GB2177639B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08517231A GB2177639B (en) 1985-07-08 1985-07-08 Ultrasonic wire bonder and method of manufacturing a semiconductor device therewith

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08517231A GB2177639B (en) 1985-07-08 1985-07-08 Ultrasonic wire bonder and method of manufacturing a semiconductor device therewith

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GB8517231D0 GB8517231D0 (en) 1985-08-14
GB2177639A true GB2177639A (en) 1987-01-28
GB2177639B GB2177639B (en) 1988-12-29

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EP0632484A1 (en) * 1993-06-30 1995-01-04 STMicroelectronics S.r.l. Method and apparatus for connecting wires between a semiconductor chip and corresponding pins
GB2361888A (en) * 2000-03-17 2001-11-07 Murata Manufacturing Co Wire bonding method, surface acoustic wave apparatus and method for producing surface acoustic wave apparatus
US7245026B2 (en) 1999-12-16 2007-07-17 Infineon Technologies Ag Configuration and method for contacting circuit structure
EP1904264A1 (en) * 2005-06-09 2008-04-02 Texas Instruments Incorporated Wire bonding capillary apparatus and method
US8008183B2 (en) * 2007-10-04 2011-08-30 Texas Instruments Incorporated Dual capillary IC wirebonding
US20160031036A1 (en) * 2013-03-11 2016-02-04 Thompson Friction Welding Linear friction welding

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Publication number Priority date Publication date Assignee Title
CN114566456B (en) * 2022-04-29 2022-08-23 深圳市铨天科技有限公司 Packaging equipment for multilayer stacked storage chips

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GB1236061A (en) * 1967-06-15 1971-06-16 Western Electric Co Methods of and apparatus for effecting bonds between workpieces
GB1264271A (en) * 1969-05-07 1972-02-16
GB1363042A (en) * 1971-08-19 1974-08-14 Gen Motors Corp Tailless wedge bonding of gold wire to palladium-silver cermets
GB1541274A (en) * 1975-06-26 1979-02-28 Kollmorgen Corp Method and apparatus for joining continuous conductive filaments to predetermined terminal areas of an element

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GB1096486A (en) * 1965-12-22 1967-12-29 Tetra Pak Ab A method of producing a thermo-couple
GB1236061A (en) * 1967-06-15 1971-06-16 Western Electric Co Methods of and apparatus for effecting bonds between workpieces
GB1264271A (en) * 1969-05-07 1972-02-16
GB1363042A (en) * 1971-08-19 1974-08-14 Gen Motors Corp Tailless wedge bonding of gold wire to palladium-silver cermets
GB1541274A (en) * 1975-06-26 1979-02-28 Kollmorgen Corp Method and apparatus for joining continuous conductive filaments to predetermined terminal areas of an element

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0632484A1 (en) * 1993-06-30 1995-01-04 STMicroelectronics S.r.l. Method and apparatus for connecting wires between a semiconductor chip and corresponding pins
US5516029A (en) * 1993-06-30 1996-05-14 Sgs-Thomson Microelectronics S.R.L. Method and apparatus for bonding a semiconductor device
US7245026B2 (en) 1999-12-16 2007-07-17 Infineon Technologies Ag Configuration and method for contacting circuit structure
GB2361888A (en) * 2000-03-17 2001-11-07 Murata Manufacturing Co Wire bonding method, surface acoustic wave apparatus and method for producing surface acoustic wave apparatus
GB2361888B (en) * 2000-03-17 2002-04-24 Murata Manufacturing Co Wire bonding method, surface acoustic wave apparatus and method for producing surface acoustic wave apparatus
US6757946B2 (en) 2000-03-17 2004-07-06 Murata Manufacturing Co., Ltd. Wire bonding method
EP1904264A1 (en) * 2005-06-09 2008-04-02 Texas Instruments Incorporated Wire bonding capillary apparatus and method
EP1904264A4 (en) * 2005-06-09 2009-05-13 Texas Instruments Inc Wire bonding capillary apparatus and method
US7578422B2 (en) 2005-06-09 2009-08-25 Texas Instruments Incorporated Bond capillary design for ribbon wire bonding
US8008183B2 (en) * 2007-10-04 2011-08-30 Texas Instruments Incorporated Dual capillary IC wirebonding
US20160031036A1 (en) * 2013-03-11 2016-02-04 Thompson Friction Welding Linear friction welding

Also Published As

Publication number Publication date
GB2177639B (en) 1988-12-29
GB8517231D0 (en) 1985-08-14

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