GB2131611B - Dielectric materials - Google Patents

Dielectric materials

Info

Publication number
GB2131611B
GB2131611B GB08328229A GB8328229A GB2131611B GB 2131611 B GB2131611 B GB 2131611B GB 08328229 A GB08328229 A GB 08328229A GB 8328229 A GB8328229 A GB 8328229A GB 2131611 B GB2131611 B GB 2131611B
Authority
GB
United Kingdom
Prior art keywords
dielectric materials
dielectric
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08328229A
Other versions
GB2131611A (en
GB8328229D0 (en
Inventor
John Henry Alexander
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB08328229A priority Critical patent/GB2131611B/en
Priority to FR8318311A priority patent/FR2536203A1/en
Publication of GB8328229D0 publication Critical patent/GB8328229D0/en
Publication of GB2131611A publication Critical patent/GB2131611A/en
Application granted granted Critical
Publication of GB2131611B publication Critical patent/GB2131611B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/085—Vapour deposited
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
    • C04B35/497—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates based on solid solutions with lead oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
GB08328229A 1982-11-17 1983-10-21 Dielectric materials Expired GB2131611B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB08328229A GB2131611B (en) 1982-11-17 1983-10-21 Dielectric materials
FR8318311A FR2536203A1 (en) 1982-11-17 1983-11-17 DIELECTRIC MATERIAL

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8232779 1982-11-17
GB08328229A GB2131611B (en) 1982-11-17 1983-10-21 Dielectric materials

Publications (3)

Publication Number Publication Date
GB8328229D0 GB8328229D0 (en) 1983-11-23
GB2131611A GB2131611A (en) 1984-06-20
GB2131611B true GB2131611B (en) 1986-11-12

Family

ID=26284423

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08328229A Expired GB2131611B (en) 1982-11-17 1983-10-21 Dielectric materials

Country Status (2)

Country Link
FR (1) FR2536203A1 (en)
GB (1) GB2131611B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2222822B (en) * 1988-04-27 1991-07-10 Plessey Co Plc A method of manufacturing perovskite lead scandium tantalate
IT1224878B (en) * 1988-09-06 1990-10-24 Siv Soc Italiana Vetro GLASS HAVING IMPROVED ELECTRIC CONDUCTIVITY AND OPALESCENCE VALUES, PARTICULARLY SUITABLE FOR USE IN THE FIELD OF PHOTOVOLTAICS AND LIQUID CRYSTALS
GB8825948D0 (en) * 1988-11-05 1988-12-14 Plessey Co Plc Method for production of thin film perovskite phase lead scandium tantalate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052604A (en) * 1964-09-05 1900-01-01
US3706597A (en) * 1970-11-23 1972-12-19 Ibm Glass vapor deposition on surfaces of semiconductor elements
GB1563513A (en) * 1975-12-09 1980-03-26 Matsushita Electric Ind Co Ltd Optical information storage material
JPS53118799A (en) * 1977-03-25 1978-10-17 Sharp Corp Stabilizing method of pzt system thin film
US4199383A (en) * 1977-04-29 1980-04-22 University Of Southern California Method of making a photovoltaic cell employing a PbO-SnO heterojunction
CA1136399A (en) * 1978-08-01 1982-11-30 Osamu Iizawa High dielectric constant type ceramic composition
CA1108842A (en) * 1978-10-30 1981-09-15 Kiyoshi Furukawa High dielectric constant type ceramic composition
US4332880A (en) * 1979-09-04 1982-06-01 Energy Conversion Devices, Inc. Imaging film with improved passivating layers
DE3066027D1 (en) * 1979-12-17 1984-02-02 Hughes Aircraft Co Low temperature process for depositing oxide layers by photochemical vapor deposition

Also Published As

Publication number Publication date
FR2536203A1 (en) 1984-05-18
GB2131611A (en) 1984-06-20
GB8328229D0 (en) 1983-11-23

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee