GB2125215B - Gated drode - Google Patents

Gated drode

Info

Publication number
GB2125215B
GB2125215B GB08302987A GB8302987A GB2125215B GB 2125215 B GB2125215 B GB 2125215B GB 08302987 A GB08302987 A GB 08302987A GB 8302987 A GB8302987 A GB 8302987A GB 2125215 B GB2125215 B GB 2125215B
Authority
GB
United Kingdom
Prior art keywords
drode
gated
gated drode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08302987A
Other versions
GB2125215A (en
GB8302987D0 (en
Inventor
William Henry Owen
Richard Thomas Simko
Wallace Edward Tchon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xicor LLC
Original Assignee
Xicor LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/071,499 external-priority patent/US4263664A/en
Priority claimed from US06/071,498 external-priority patent/US4326134A/en
Application filed by Xicor LLC filed Critical Xicor LLC
Publication of GB8302987D0 publication Critical patent/GB8302987D0/en
Publication of GB2125215A publication Critical patent/GB2125215A/en
Application granted granted Critical
Publication of GB2125215B publication Critical patent/GB2125215B/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391Gated diode structures
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K4/00Generating pulses having essentially a finite slope or stepped portions
    • H03K4/02Generating pulses having essentially a finite slope or stepped portions having stepped portions, e.g. staircase waveform

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
GB08302987A 1979-08-31 1983-02-03 Gated drode Expired GB2125215B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/071,499 US4263664A (en) 1979-08-31 1979-08-31 Nonvolatile static random access memory system
US06/071,498 US4326134A (en) 1979-08-31 1979-08-31 Integrated rise-time regulated voltage generator systems

Publications (3)

Publication Number Publication Date
GB8302987D0 GB8302987D0 (en) 1983-03-09
GB2125215A GB2125215A (en) 1984-02-29
GB2125215B true GB2125215B (en) 1984-08-22

Family

ID=26752295

Family Applications (3)

Application Number Title Priority Date Filing Date
GB8027789A Expired GB2058502B (en) 1979-08-31 1980-08-28 Integrated rise time regulated voltage generator systems
GB8027809A Expired GB2061045B (en) 1979-08-31 1980-08-28 Nonvolatile static random access memory system
GB08302987A Expired GB2125215B (en) 1979-08-31 1983-02-03 Gated drode

Family Applications Before (2)

Application Number Title Priority Date Filing Date
GB8027789A Expired GB2058502B (en) 1979-08-31 1980-08-28 Integrated rise time regulated voltage generator systems
GB8027809A Expired GB2061045B (en) 1979-08-31 1980-08-28 Nonvolatile static random access memory system

Country Status (3)

Country Link
GB (3) GB2058502B (en)
IT (2) IT1143098B (en)
NL (2) NL8004857A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4488060A (en) * 1979-01-24 1984-12-11 Xicor, Inc. High voltage ramp rate control systems
JPS57192067A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Erasable and programmable read only memory unit
US4481566A (en) * 1983-04-04 1984-11-06 International Business Machines Corporation On chip charge trap compensated high voltage converter
IT1215224B (en) * 1983-08-04 1990-01-31 Ates Componenti Elettron INTEGRATED STRUCTURE MICROCALCULATOR WITH NON VOLATILE RAM MEMORY.
JPS61117915A (en) * 1984-11-13 1986-06-05 Fujitsu Ltd Delay circuit
JPS63290159A (en) * 1987-05-20 1988-11-28 Matsushita Electric Ind Co Ltd Booster circuit
JP2645417B2 (en) * 1987-09-19 1997-08-25 富士通株式会社 Non-volatile memory device
NL8800287A (en) * 1988-02-08 1989-09-01 Philips Nv MEMORY CIRCUIT WITH AN ERASABLE PROGRAMMABLE MEMORY, GENERATOR FOR GENERATING A PROGRAMMING VOLTAGE FOR MEMORY, VOLTAGE REGULATOR AND FLANK REGULATOR, BOTH SUITABLE FOR APPLICATION IN THE GENERATOR.
FR2776838B1 (en) * 1998-03-26 2003-06-13 Sgs Thomson Microelectronics METHOD FOR MANUFACTURING A ZENER TYPE DIODE WITH VARIABLE THRESHOLD

Also Published As

Publication number Publication date
NL8004852A (en) 1981-03-03
NL8004857A (en) 1981-03-03
GB2125215A (en) 1984-02-29
GB2061045B (en) 1984-06-20
IT1143098B (en) 1986-10-22
GB2058502B (en) 1984-02-08
IT8049574A0 (en) 1980-08-29
IT8049575A1 (en) 1982-03-01
IT8049575A0 (en) 1980-08-29
GB8302987D0 (en) 1983-03-09
GB2058502A (en) 1981-04-08
IT1188950B (en) 1988-01-28
GB2061045A (en) 1981-05-07

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20000827