GB2125215B - Gated drode - Google Patents
Gated drodeInfo
- Publication number
- GB2125215B GB2125215B GB08302987A GB8302987A GB2125215B GB 2125215 B GB2125215 B GB 2125215B GB 08302987 A GB08302987 A GB 08302987A GB 8302987 A GB8302987 A GB 8302987A GB 2125215 B GB2125215 B GB 2125215B
- Authority
- GB
- United Kingdom
- Prior art keywords
- drode
- gated
- gated drode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/02—Generating pulses having essentially a finite slope or stepped portions having stepped portions, e.g. staircase waveform
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/071,499 US4263664A (en) | 1979-08-31 | 1979-08-31 | Nonvolatile static random access memory system |
US06/071,498 US4326134A (en) | 1979-08-31 | 1979-08-31 | Integrated rise-time regulated voltage generator systems |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8302987D0 GB8302987D0 (en) | 1983-03-09 |
GB2125215A GB2125215A (en) | 1984-02-29 |
GB2125215B true GB2125215B (en) | 1984-08-22 |
Family
ID=26752295
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8027789A Expired GB2058502B (en) | 1979-08-31 | 1980-08-28 | Integrated rise time regulated voltage generator systems |
GB8027809A Expired GB2061045B (en) | 1979-08-31 | 1980-08-28 | Nonvolatile static random access memory system |
GB08302987A Expired GB2125215B (en) | 1979-08-31 | 1983-02-03 | Gated drode |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8027789A Expired GB2058502B (en) | 1979-08-31 | 1980-08-28 | Integrated rise time regulated voltage generator systems |
GB8027809A Expired GB2061045B (en) | 1979-08-31 | 1980-08-28 | Nonvolatile static random access memory system |
Country Status (3)
Country | Link |
---|---|
GB (3) | GB2058502B (en) |
IT (2) | IT1143098B (en) |
NL (2) | NL8004857A (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4488060A (en) * | 1979-01-24 | 1984-12-11 | Xicor, Inc. | High voltage ramp rate control systems |
JPS57192067A (en) * | 1981-05-22 | 1982-11-26 | Hitachi Ltd | Erasable and programmable read only memory unit |
US4481566A (en) * | 1983-04-04 | 1984-11-06 | International Business Machines Corporation | On chip charge trap compensated high voltage converter |
IT1215224B (en) * | 1983-08-04 | 1990-01-31 | Ates Componenti Elettron | INTEGRATED STRUCTURE MICROCALCULATOR WITH NON VOLATILE RAM MEMORY. |
JPS61117915A (en) * | 1984-11-13 | 1986-06-05 | Fujitsu Ltd | Delay circuit |
JPS63290159A (en) * | 1987-05-20 | 1988-11-28 | Matsushita Electric Ind Co Ltd | Booster circuit |
JP2645417B2 (en) * | 1987-09-19 | 1997-08-25 | 富士通株式会社 | Non-volatile memory device |
NL8800287A (en) * | 1988-02-08 | 1989-09-01 | Philips Nv | MEMORY CIRCUIT WITH AN ERASABLE PROGRAMMABLE MEMORY, GENERATOR FOR GENERATING A PROGRAMMING VOLTAGE FOR MEMORY, VOLTAGE REGULATOR AND FLANK REGULATOR, BOTH SUITABLE FOR APPLICATION IN THE GENERATOR. |
FR2776838B1 (en) * | 1998-03-26 | 2003-06-13 | Sgs Thomson Microelectronics | METHOD FOR MANUFACTURING A ZENER TYPE DIODE WITH VARIABLE THRESHOLD |
-
1980
- 1980-08-27 NL NL8004857A patent/NL8004857A/en not_active Application Discontinuation
- 1980-08-27 NL NL8004852A patent/NL8004852A/en not_active Application Discontinuation
- 1980-08-28 GB GB8027789A patent/GB2058502B/en not_active Expired
- 1980-08-28 GB GB8027809A patent/GB2061045B/en not_active Expired
- 1980-08-29 IT IT49574/80A patent/IT1143098B/en active
- 1980-08-29 IT IT49575/80A patent/IT1188950B/en active
-
1983
- 1983-02-03 GB GB08302987A patent/GB2125215B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL8004852A (en) | 1981-03-03 |
NL8004857A (en) | 1981-03-03 |
GB2125215A (en) | 1984-02-29 |
GB2061045B (en) | 1984-06-20 |
IT1143098B (en) | 1986-10-22 |
GB2058502B (en) | 1984-02-08 |
IT8049574A0 (en) | 1980-08-29 |
IT8049575A1 (en) | 1982-03-01 |
IT8049575A0 (en) | 1980-08-29 |
GB8302987D0 (en) | 1983-03-09 |
GB2058502A (en) | 1981-04-08 |
IT1188950B (en) | 1988-01-28 |
GB2061045A (en) | 1981-05-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PE20 | Patent expired after termination of 20 years |
Effective date: 20000827 |