GB2100751A - Electrolytically etching aluminium - Google Patents
Electrolytically etching aluminium Download PDFInfo
- Publication number
- GB2100751A GB2100751A GB08118823A GB8118823A GB2100751A GB 2100751 A GB2100751 A GB 2100751A GB 08118823 A GB08118823 A GB 08118823A GB 8118823 A GB8118823 A GB 8118823A GB 2100751 A GB2100751 A GB 2100751A
- Authority
- GB
- United Kingdom
- Prior art keywords
- stage
- current
- aluminum
- wave
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 238000005530 etching Methods 0.000 title claims abstract description 22
- 239000004411 aluminium Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000007423 decrease Effects 0.000 claims abstract description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000003792 electrolyte Substances 0.000 claims abstract description 7
- 239000011888 foil Substances 0.000 claims description 17
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 description 10
- 238000000866 electrolytic etching Methods 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- -1 nitric Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- 235000011149 sulphuric acid Nutrition 0.000 description 2
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010349 cathodic reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 235000015220 hamburgers Nutrition 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/055—Etched foil electrodes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/04—Etching of light metals
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
A method of etching aluminium by applying an alternating electric current to aluminium which is in contact with an electrolyte containing hydrochloric acid, in which the alternating current has a symmetrical waveform wherein the current rises rapidly from zero to a maximum, then subsequently decreases rapidly in a first stage (t1) to an intermediate value which is about one-third to about one- half of the maximum, and thereafter decreases more slowly to zero in a second stage (t2). Thereafter the current rises and falls in the opposite direction with the same waveform. The ratio of time of the second stage to time of the first stage of the waveform is in the range from 1 to 6. By this procedure higher capacitance values of the etched aluminium are obtained in comparison to prior procedures. <IMAGE>
Description
SPECIFICATION
A method of etching aluminum
This invention relates to the electrolytic etching of aluminum, particularly aluminum foil. More particularly this invention relates to a procedure for electrolytic etching of aluminum with an alternating current of special wave shape.
BACKGROUND OF THE INVENTION
It is common practice to electrochemically etch aluminum foil to increase the surface area thereof for capacitor electrodes. In the United States and Europe this is usually done with direct current while in
Japan it is commonly done with alternating current. A modified type of direct current called pulsating or ripple direct current has also been used. With this type of current particular wave shape is superimposed on a steady direct current.
Most of the prior art patents on alternating current electrochemical etching of aluminum do not specify wave shape or frequency of the current, giving rise to the implication that the use of ordinary line current at 50 or 60 hz is suitable, although recently a Japanese process has been reported with low frequency alternating current or 3 to 30 hz.
THE PRIOR ART
Patent 4,087,341 to Takahaski et al shows an asymmetrical, sinusoidal voltage wave form wherein the voltage is applied with a higher anodic voltage than the cathodic voltage. The ratio of cathodic coulombic input to anodic coulombic input is in the range of 0.3-0.8.
Patent 3,193,485 to Vincent shows a voltage wave form having a positive going portion separated by a short negative going portion of considerably less amplitude than the positive going portion.
Patent 3,294,523 to Post et al describes a direct current etching procedure with a pulsating degree of below 50%, but at least 5%.
Patent 3,520,788 to Paehr relates to an etching procedure DC voltage pulse to effectively interrupt the etching current for a short period between the major pulses.
Three patents to Inoue (3,616,343; 3,616,346; 3,654,116) show many wave forms for electrochemical machining. The general method of these patents is to apply steep wave front pulses of one polarity spaced by intervals during which opposite polarity pulses are applied. The opposite polarity pulses are of short duration but of duration and amplitude sufficient to electrochemically destroy a passivation film formed furing the first polarity pulse. The specific position of the negative going pulse in the interval between the positive going pulse is a matter of design. Figures 5 of 3,616,346 show a variety of ramps superimposed on square waves to compensate for the passivation effect illustrated in
Figures 4.
Patent 3,294,666 to Wiersma shows in Figure 3 a wave form e which has alternating DC pulses with a zero portion between the alternation. Patent 2,901,412 to Mostovych et al and patent 3,892,636 to Kaneda et al show specific wave forms directed to the anodizing or coloration of aluminum surfaces. Patent 2,930,741 to Burger et al describes electrolytic etching with pulsating direct current of appropriate degree of pulsation.
An article entitled "Revealing Dislocation Structure by Electrolytic Etching with a Periodic
Current", Industrial Laboratory, Vol. 41, No. 7, pp. 1054-1056, July 1975, shows a generator in
Figure 1 for electrolytic etching using a pulsing single polarity half-cycle wave form in Figure 1 B, a portion of the wave form of Figure 1 C and a periodic wave form in Figure 1 D wherein the reverse pulse which is considered in the disclosure, the anodic portion of the cycle, has less area under the curve than the positive or cathodic portion of the curve.
According to the present invention there is provided a method of etching aluminum by applying an alternating electric current to aluminum which is in contact with an electrolyte containing hydrochloric acid, in which method the alternating current has a wave form wherein the current rises rapidly from zero to a maximum, then subsequently decreases rapidly in a first stage to an intermediate value which is about one-third to about one-half of the maximum, and thereafter decreases more slowly to zero in a second stage, the ratio of time of the second stage to time of the first stage being in the range of from 1:1 to 6:1.
The present invention concerns the electrolytic etching of aluminum foil by use of alternating current of special, unusual wave shape. The capacitance of the aluminum foil so etched is much greater than that of the aluminum foil prior to the etching and is superior to that of aluminum foil etched by prior procedure. The particular wave shapes of the alternating current in the electrolytic etching operation have been found to give higher capacitance than sine, square or triangular wave shapes used in the prior art in an acid chloride-containing electrolyte.
The invention is further disclosed by the attached drawings wherein each of the seven figures represents, by way of Example only, a wave form of the type used in this invention. The wave above the zero line represents anodic current and the wave below the zero line represents cathodic current, both plotted against time.
A representative alternating current wave shape used in this invention is illustrated in Figure 1 of the drawings. The complete wave consists of two half cycles of equal time and peak height with equal areas under each curve. In this wave each anodic or cathodic half cycle can be regarded as subdivided into two stages. Stage 1 consists of an increasing then decreasing current extending over the time period represented by t1 and is followed by stage 2 in which the current decreases at a slower rate than in stage 1, extending over the time period represented by t2. Figures 3, 5, 6 and 7 illustrate similar wave forms based on square and sine waves.
By use of the alternating current of the aforementioned wave shape the capacitance of the aluminum foil is higher than the capacitance obtained with any square, sine or saw-tooth wave current used in the same electrolyte for the same total anodic, coulombic charge. In this specification saw-tooth means a wave-shape with only two-slopes or gradients of changes of current in each half cycle.
Prior to this invention no one had conducted electrolytic etching with special wave forms of the type described herein. The waves utilized in the present invention have symmetrical shapes and equal anodic and cathodic charges. They have a distinctive shape wherein the first part of the wave is characterized by a rapid rise and then a rapid decrease in current and then an abrupt change in the decreasing current which is evidenced by a tail of slowly decreasing current to zero, followed by the same wave pattern of current in the opposite direction.
A preferred form of the wave shape is illustrated in Figure 1 which shows an anodic current rapidly rising from zero to a maximum then falling rapidly to point t1 on the time scale at which the current shows a substantial and significant decrease in rate so that the current decreases to zero over a prolonged period of time which is represented by t2 on the time scale. The decrease in current in the first stage (within the time period represented by t1) from the maximum to the value at t is to approximately one-quarter to one-half the peak value. In the second stage (beginning at t1) with the more slowly decreasing current, the time required for the current to decrease to zero is represented by t2. The ratio of time of stage 2 to the time of stage 1, that is the ratio of t2/t1, is between 1 and 6, and preferably from 1 to 3.
The other figures of the drawing represent other suitable wave shapes. Figure 2 shows a wave in which the current in the first stage rises rapidly to a peak then declines less rapidly to time t1. Thereafter the second stage of more slowly declining current occurs.
Figure 3 illustrates a square wave in the first stage, followed by a second stage of regularly decreasing current to zero.
Figure 4 shows a wave form similar to that of Figure 2, the main difference being that the time required for the second stage is much longer in Figure 4 than in Figure 2; in addition the rate of current decrease in the first stage of Figure 4 is lower than that of Figure 2.
Figure 5 illustrates a sine wave form in the first stage, with regularly decreasing current in the second stage.
Figure 6 shows a square wave form in the first stage and a second stage with current declining at a nonuniform rate commencing at t1 and reaching zero, represented by a curve.
Figure 7 illustrates a sine wave form in the first stage and a second stage with current declining at a nonuniform rate over the time period between t1 and t2.
The particular wave form with two rates of decreasing current provides an alternating current system for etching or electrograining aluminum which may be at least 10% more efficient than other alternating current wave forms used with the same aluminum and the same etchant at the same temperature and time conditions.
The time required for the wave to reach a maximum can vary from nearly zero to about 60% oft1, depending upon the design of the power supply and the wave shape. For an initial square wave pulse the time required to reach a maximum is essentially zero (see Figures 3 and 5), while with a triangular wave the time may be increased to 20%60% oft1 (see Figures 1, 2 and 4). With triangular waves the time for the current to reach a maximum is usually 2550% of t,.
The decreasing current of stage 2 may be represented linearly as in Figure 1 or curved as in Figure 7, again depending on power supply design. The important feature is that the decreasing wave be in two stages. the first relatively fast and the second relatively slow, decreasing to zero.
The etchant in which the electrolysis is conducted is a hydrochloric acid solution, preferably containing other acids such as nitric, oxalic, phosphoric and sulfuric. The preferred etchant contains hydrochloric acid of normality 0.5 to 2.5, nitric acid of 0.05 to 0.25, normality phosphoric acid 0.05 to 0.25 N and sulfuric acid 1-3 x 10-3 N. As the etching operation proceeds, aluminum quickly becomes dissolved in the acid etchant thus providing aluminum ions. The aluminum chloride concentration in the etchant is preferably at a normality of about 0.5 to 1.0, with a maximum of about 3N. The practical operating parameters for the etching operation are a temperature in the range of 380 to 50"C, a frequency of 1 5-25 hertz and a current density of 100--300 milliamperes (r.m.s.) per square centimeter.
GENERAL LABORATORY PROCEDURE FOR ETCHING
An aluminum foil specimen is mounted in a suitable holder. The area exposed for etching may be 1, 5 or 10 cm2. A small carbon rod or platinum foil is used as the counterelectrode. Electrical connections are made to the foil specimen and the counterelectrode. The etchant is prepared by mixing suitable volumes of concentrated reagent grade acids, aluminum chloride and distilled water. In typical operations, the etchant contained 1.0 N HCI, 0.10 N HNO3, N H3PO4 and 0.0015 N H2SO4 and 0.8 N AICI3 in distilled water. Etchant temperature control and circulation are provided by pumping the etchant through a temperature-controlled oil bath or by use of a magnetic stirrer and regulated immersion heater; the temperature in this run is maintained in the range of 4050C C.
The electrical current is from a potentiostat wired as a bi-directional current source. An external input signal to the potentiostat from a digital wave form generator shapes the current output with the desired waveshape. Before a run is started the connections to the etch cell are shorted and the required cell current is set by adjusting the voltage level of the waveform generator. This operation is monitored with an oscilloscope. The current is then shut off, connections made to the cell, the specimen immersed in the etchant, and the current turned on for a time calculated to give the desired etch charge. The specimen is removed from the holder, thoroughly rinsed in water, and then the oxide dielectric film is formed in any one of several electrolytic baths known in the art.This is conveniently carried out by making the etched aluminum foil the anode in a nonreactive electrolyte containing borate or phosphate ions and applying direct current. This produces a dense aluminum oxide film on the foil with high dielectric constant.
In some commercial AC etching operations and in some small-scale etching procedures there is no direct electrical connection to the aluminum foil to be etched. Instead, the foil serves as a separator between two electrode compartments and the electrical connections are made to carbon electrodes in these compartments. As the electricity passes through the foil between compartments it causes alternating anodic and cathodic reactions on each side of the aluminum. This contactless etching procedure and the contact etching operation described above used are electrically equivalent, and both can be used in the present invention.
EXAMPLE 1
An aluminum foil (99.99% Al, 0-temper, 10 cm2, 1 00um thick) was etched by the general procedure described above in an electrolyte of the following composition:
Component Normality
HCI 0.87
HNO3 0.12
H2PO4 0.22
H2SO4 0.0015
AICI3 0.90
The charge density was 54 C/cm2. The capacitances were measured at 1 20 Hz after forming anodic barrier oxide films at 20 V and 64 V.After optimizing temperature, current density and frequency, the highest capacitances obtained with sine and square waves were as follows:
Capacitance (,u/cm2) Shape T (OC) F (Hz) cd (mA/cm2) 20 V 64 V
Sine 41 19 175 18.6 4.4
Square 39 22 169 18.3 4.0
EXAMPLE 2
This example describes etching procedures with waveshapes corresponding to Figures 1 and 3 of the drawing, with the same materials described in Example 1. The waveshape of Figure 1 , in which t2/t1 = 2.0, tested at 400C, with a charge of 54 C/cm2, at 1 6.7 to 1 6.8 Hz, and a peak current density of 500 mA/cm2 on a foil of 1 sq. cm gave a capacitance of 21.5 MF/cm2 at 20 V and 4.7,uF/cm2 at 64 V.
This waveshape gave 15% higher capacitance at 20 V than a sine wave and 7% higher at 64 V, all other conditions being the same.
The waveshape of Figure 3, in which t2/t1 = 2.0, at 1 6.8 Hz and 400C gave capacitance values of 20.5,uF/cm2 at 20 V and 5.3 F/cm2 at 64 V. At 64 V this waveshape results in a capacitance 20% higher than that for a sine wave under the same conditions.
EXAMPLE 3
In this example, the waveshape of Figure 3 was used with the same etchant, temperature total charge, frequency, as in Example 2, second paragraph. Current density during t1 was varied to keep the charge during t1 constant and equal to the charge during t1 in Example 2, first paragraph. The following
results were obtained: Cap (yF/cm2) cd (t1)
(mA/cm2) t2/t1 20 V 64 V
309 2.0 20.5 5.3
515 4.0 20.2 4.5
EXAMPLE 4
The waveshape of Figure 1 was used with the same etchant, temperature and total charge of
Example 2, second paragraph, but with varied t2/t1, frequency, peak cd.
Cap (uF/cm2) t2/t1 Freq. pk cd 20 V 64 V
1.0 20.0 500 19.3 4.3
1.4 16.8 500 19.8 4.2
3.8 16.8 500 17.6 4.7
3.8 16.8 600 19.0 3.8
At each condition there was an improvement over sine wave results at either 20 V or 64 V.
Claims (13)
1. A method of etching aluminum by applying an alternating electric current to aluminum which is in contact with an electrolyte containing hydrochloric acid, in which method the alternating current has a wave form wherein the current rises rapidly from zero to a maximum, then subsequently decreases rapidly in a first stage to an intermediate value which is about one-third to about one-half of the maximum, and thereafter decreases more slowly to zero in a second stage, the ratio of time of the second stage to time of the first stage being in the range of from 1:1 to 6:1.
2. The method of claim 1, wherein the ratio of the second stage to the first stage is in the range from 1:1 to 3:1.
3. The method of claim 1 or 2, wherein the waveform of the first stage of current is a triangular wave.
4. The method of claims 1 or 2, wherein the waveform of the first stage of the current is a sine wave.
5. The method of claims 1 or 2, wherein the waveform of the first stage of current is a square wave.
6. The method of any one of the preceding claims, wherein the current density is from 100 to 300 milliamperes (rms) per square centimeter of aluminum.
7. The method of any one of the preceding claims, wherein the frequency of the alternating current is from 15 to 25 hertz.
8. A method of etching or electrograining aluminum, wherein the waveform of the alternating current is substantially as shown in any one of the individual figures of the accompanying drawings.
9. A method of etching or electrograinins aluminum, substantially as hereinbefore described or with reference to any one of the foregoing individual Examples 1 to 4.
10. Aluminum, when etched (or electrograined) by a method as claimed in any one of the preceding claims.
11. Aluminum, according to claim 10 and in the form of a foil.
12. Aluminum according to claim 10 or 11 and upon which an aluminum oxide film has been formed.
13. The features hereinbefore disclosed, or their equivalents, in any novel selection.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08118823A GB2100751B (en) | 1981-06-18 | 1981-06-18 | Electrolytically etching aluminium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08118823A GB2100751B (en) | 1981-06-18 | 1981-06-18 | Electrolytically etching aluminium |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2100751A true GB2100751A (en) | 1983-01-06 |
GB2100751B GB2100751B (en) | 1984-08-15 |
Family
ID=10522614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08118823A Expired GB2100751B (en) | 1981-06-18 | 1981-06-18 | Electrolytically etching aluminium |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2100751B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0292801A2 (en) * | 1987-05-26 | 1988-11-30 | Hoechst Aktiengesellschaft | Process for the electrochemical graining of aluminium for supports for printing plates |
EP0502507A1 (en) * | 1991-03-07 | 1992-09-09 | Fuji Photo Film Co., Ltd. | Method and apparatus for electrolytic treatment |
EP0887203A1 (en) * | 1997-06-23 | 1998-12-30 | Konica Corporation | Manufacturing method of planographic printing plate support and presensitized planographic printing plate |
-
1981
- 1981-06-18 GB GB08118823A patent/GB2100751B/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0292801A2 (en) * | 1987-05-26 | 1988-11-30 | Hoechst Aktiengesellschaft | Process for the electrochemical graining of aluminium for supports for printing plates |
EP0292801A3 (en) * | 1987-05-26 | 1989-07-05 | Hoechst Aktiengesellschaft | Process for the electrochemical graining of aluminium for supports for printing plates |
EP0502507A1 (en) * | 1991-03-07 | 1992-09-09 | Fuji Photo Film Co., Ltd. | Method and apparatus for electrolytic treatment |
US5221442A (en) * | 1991-03-07 | 1993-06-22 | Fuji Photo Film Co., Ltd. | Method and apparatus for electrolytic treatment |
EP0887203A1 (en) * | 1997-06-23 | 1998-12-30 | Konica Corporation | Manufacturing method of planographic printing plate support and presensitized planographic printing plate |
US6045681A (en) * | 1997-06-23 | 2000-04-04 | Konica Corporation | Manufacturing method of planographic printing plate support and presensitized planographic printing plate |
Also Published As
Publication number | Publication date |
---|---|
GB2100751B (en) | 1984-08-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PE20 | Patent expired after termination of 20 years |
Effective date: 20010617 |