GB2088412A - Method of Fabricating a Metallic Pattern on a Substrate - Google Patents
Method of Fabricating a Metallic Pattern on a Substrate Download PDFInfo
- Publication number
- GB2088412A GB2088412A GB8136402A GB8136402A GB2088412A GB 2088412 A GB2088412 A GB 2088412A GB 8136402 A GB8136402 A GB 8136402A GB 8136402 A GB8136402 A GB 8136402A GB 2088412 A GB2088412 A GB 2088412A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photoresist
- metal
- border
- pattern
- anodic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0597—Resist applied over the edges or sides of conductors, e.g. for protection during etching or plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Magnetic Heads (AREA)
- ing And Chemical Polishing (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
A method for fabricating a metallic pattern (6) eg of Ni-Fe alloy on a substrate (1) eg of SiO2 or glass consists of depositing an adhesive metal layer (2) and/or, plateable metal layer (3) which become(s) cathodic during etching, on a substrate. A narrow self-supporting border of photoresist (15, 16) is then applied. An anodic layer (4, 5 and 6) is then deposited and the photoresist removed. The adhesive and plateable metal material is etched in those areas (11, 12) previously covered by the photoresist and fresh photoresist (8) applied to encapsulate those areas (6) of the anodic layer which form the final pattern of interest. The unwanted anodic material (4 and 5) is then etched and the photoresist removed. The adhesive metal (2) may be Cr, Ti, Ta, W, Nb, V or Zr; and the plateable metal (3) may be Au, Pt, Pd, Cu, Ni or Ni-Fe. The invention overcomes the problem of severe undercutting of the cathodic layers (2 and 3). <IMAGE>
Description
SPECIFICATION
Method for Fabricating a Metallic Pattern on a
Substrate
This invention relates of a method of
fabricating a metallic pattern on a substrate.
When fabricating metallic patterns to form, for
example the pole pieces of thin film magnetic
recording heads or other high tolerance elements,
new techniques have developed in electroplating
and etching sheet materials whose composition
and structure must be accurately controlled in
order to achieve uniformity of performance. As
taught in U.S. Patent No. 3,853,715 conventional
masking techniques are quite ineffective in
producing these elements.
What has been done in the prior art, in dealing
with the plating of an alloy, such as Permalloy, a
mixture of nickel and iron, was to plate the alloy in
sheet form and then etch the sheet into desired
patterns. However, when depositing films by
electroplating, it is necessary to employ an
adhesive layer between the alloy and the
substrate that will support the alloy pattern. Since
on certain adhesive layers it is not possible to
electroplate, it is at times necessary to deposit a
thin layer of fairly noble metal, such as Au, Pt, Pd,
Cu, Ni, etc. on the adhesion layer.
Unfortunately, many adhesive and plating base
layers that are compatible with the magnetic alloy
in the substrate become cathodic to the alloy
during etching, producing severe undercutting.
For example, nickel-iron alloy is made adhesive to
glass or silicon by interposing a thin layer of
chromium or titanium between the nickel iron
alloy and is associated substrate. As taught in
U.S. Patent No. 3,853,715, when such plural
layers are etched, a severe undercut is observed
in the etched material. Such undercutting is due
to several separate effects taking place during etching and is neither reproducible nor controllable. The undercutting is due to the fact that the chemical etching is an accelerated form of corrosion. The corrosion is isotropic in principle; it should take place at equal rates both normal to the thickness of the etched metal and parallel to the thickness. This results in uniform undercutting of the metal. But due to the extremely small film thicknesses and pattern dimensions, the dimensions of the metal crystallites and grains cannot be ignored.The grain boundaries and grains etch at different rates, resulting in ragged edges.
During the terminal stages of etching, when the adhesive and/or the plating base metal layers are exposed, the dissimilar metals form a galvanic cell which results in extremely rapid etching of the anodic metal. In case of titanium and chromium, each of these metals passivate extremely quickly and becomes cathodic to nickel, nickei-iron and to the metals of the iron group. When the metals such as platinum, palladium, gold or copper are present in the sandwich with the iron group metals, they act cathodically and the etching of
the nickel, nickel-iron alloy, etc. is impossible to
control.
Such undercutting is detrimental to the making
of batch-fabricated arrays, such as the pole pieces
of thin film magnetic heads.
U.S. Patent No. 3,853,715 recognizes the
above-described difficulties and teaches a
solution. In order to achieve uniform etching of
multi-layered electroplated metals without
undercutting, the patent teaches placement of a
very narrow border of photoresist on top of the
cathodic adhesive metal layer prior to
electroplating the anodic metal. The narrow
border closes upon itself to serve as a frame,
while a second photoresist layer is deposited and
developed so as to be present only over the
anodic material to be retained after etching. The
second photoresist overlaps the first photoresist
to completely encapsulate the anodic layer.It is
taught that subsequent etching of the surplus
anodic material not needed in the ultimate pattern
leaves the desired portions of the pattern free
from attack, avoiding the undercutting that occurs
when two or more dissimilar metals are subject to
a common etchant.
It has now been found that the prior art
solution to the problem of undercutting is not
entirely adequate. More specifically, it has been
determined that after the electroplated anodic
material, such as Ni-Fe alloy, has been etched
away, the etchant then has access to the cathodic
metal/adhesive layers and lateral etching occurs
below the border photoresist. Once this begins to
occur, the adhesive maintaining the photoresist in
place loses its structural integrity and the
photoresist begins to remove from the substrate
further compounding the undercutting problem.
In order to substantially eliminate the problem
of undercutting, the present invention places a
very narrow border of photoresist to define the
later formed electrodeposited anodic material,
such as Permalloy. Although the prior art, namely,
U.S. Patent No. 3,853,715, also uses a border of
photoresist, the present invention differs
therefrom in completely encapsulating the anodic
material by photoresist which extends all the way
to the inert substrate. Like the prior art, the
present invention places the narrow border of
photoresist on the cathodic metal/adhesive layer
in a very narrow border region of width and
dimension intended to define the final metal
product being produced.After the photoresist is
formed, the anodic material is deposited on the
cathodic metal/adhesive underlayer and the
photo resist then removed to expose said cathodic
metal/adhesive underlayer only in those regions
previously covered by the narrow self-supporting
border of photoresist. The cathodic
metal/adhesive underlayer is then removed in
these exposed regions and photoresist is then re
applied extending all the way to the inert support
and covering and thus encapsulating the anodic
material intended as the final product.
By practicing the present invention, the photoresist acts as a substantially impermeable barrier to lateral etching, thus substantially eliminating the problem of undercutting. The corrosive etching is allowed to travel along the cathodic metal/adhesive underlayer, but when the etchant confronts the photo resist, a barrier is encountered terminating the etching process.
In the accompanying drawings:- Fig. 1 and 2 show prior art processing steps as taught in U.S. Patent No. 3,853,715.
Figs. 3-7 show the sequential processing steps for the elimination of undercutting during the fabrication of a metallic pattern on a substrate by chemical etching according to the present invention.
Fig. 1 shows an electroplated sheet being processed whereby substrate 1 of silicon dioxide, glass or other similar self-supporting insulating material is caused to support a thin layer of adhesion metal 2, such as chromium, titanium, tantalum, tungsten, niobium, vanadium or zirconium. Such adhesive metal 2 is used primarily to make the main metal of interest such as Ni-Fe alloy, referred to as the anodic metal, adherant to the substrate. Since one cannot readily electroplate or electrolessly plate on such adhesion layer, it is desirable to sequentially metallize the adhesion layer 2 with readily plateable metal 3,such as Au, Pt, Pd, Cu, Ni, Ni
Fe or with a metal alloy. Such adhesion layer 2 and conductive layer 3 can be applied by sputtering, evaporating, or in any other manner.
According to the prior art, at this stage of the processing sequence, photoresist 7 and 17 is deposited by conventional lithographic techniques and the anodic material 6 such as
Permalloy is deposited.
After the plating of the Permalloy layer 6, another photoresist layer 8 is applied by conventional photolithographic techniques to the top of anodic metal 6. The excess anodic material shown as areas 4 and 5 of Fig. 1 is then etched away, FeCI3 being a suitable etchant for Ni-Fe, the photoresist borders 7, 17 and 8 encapsulating the anodic material.
The prior art teaches that the photoresist prevents the active metal such as Ni-Fe from being etched, while in the presence of cathodic metal, such as chromium, titanium, gold, etc.
After the more active metal 6 was etched with
FeCI3, it is taught that the plating base metal 3 and adhesion layer 2 are etched with suitable chemical etchants. As stated previously, however, it has been discovered that etchants used to remove non-wanted anodic areas 4 and 5 together with plating base metal 3 and adhesion layer 2 laterally etch layers 2 and 3 below photoresist boundary areas 7 and 1 7 causing serious undercutting and loss of sharp edge etching as shown in Fig. 2 at 9 and 10. Once
lateral etching begins, photoresist areas 7 and 1 7 lose their adhesion to supporting layers 2 and 3, which further aggravates the problem.
Furthermore, because of the difference in electrochemical potentials between the adhesion metal layer 2, such as titanium, and the anodic metal, such as Ni-Fe, a battery is formed as soon as the adhesive metal layer is exposed to the etchant, and the etch rate of the Ni-Fe is increased to such an extent that it makes control of the etching process very difficult if not impossible.
In order to overcome these difficulties, reference is made to Figs. 3-7. Fig. 3 shows the processing which would be substantially equivalent to the prior art at an equivalent point in its processing cycle. More specifically, upon adhesive metal layer 2 and plateable metal layer 3 has been applied a very narrow border of photoresist shown as elements 1 5, 1 6. The anodic layer is then deposited upon metal layer 3 as a uniform coating shown as regions 4, 5 and 6.
It is region 6 which is intended to be the pattern of interest as the final product and its configuration is defined by the very narrow selfsupporting border of photoresist 15, 16.
Unlike the prior art, the border of photoresist 15, 16 is now removed by any well known technique, thus exposing adhesive metal layer 2 and plateable metal layer 3 selectively in those areas which were defined by the very narrow selfsupporting border of photoresist. As shown in Fig.
4, adhesive metal layer 2 and plateable metal layer 3 are selectively removed by any well known technique, such as by sputter etching or ion milling, resulting in voids 11 and 12 extending all the way to base 1 at 13, 14. These voids, preferably approximately 0.1 to 0.2 mils wide, define the final pattern or patterns of anodic material, which will become, for example, the pole pieces of thin film magnetic heads.
The voids 11, 12 are filled with photoresist 8 which is caused to completely encapsulate anodic material 6 on three sides with the fourth side of this region being encapsulated by inert base 1.
As shown in Fig. 5, photoresist 8 can extend slightly beyond filled voids 11, 12. The excess anodic material 4, 5, such as electrodeposited
Permalloy, is then etched away, FeCI3 being a suitable etchant for Fe-Ni alloy. Plating base metal 3 and adhesive layer 2 can be etched with suitable chemical etchants. Because photoresist 8 is in physical contact with support base 1, the etching of areas 4 and 5, as well as layers 2 and 3, does not in any way adversely effect the sharp edge integrity of the anodic metal or support layers 2 and 3 located within the boundaries defined by photoresist 8 (Fig. 6). The photoresist material 8 is lastly removed by any well known technique resulting in the final sharp-edged pattern, unattainable in the prior art (Fig. 7).
The teachings of U.S. Patent No. 3,853,715 including preferred photoresist material as well as etchants are hereby incorporated by reference herein.
Claims (14)
1. A method for fabricating a metallic pattern on a substrate comprising the steps of:
a. depositing a first thin metallic layer on an inert substrate;
b. depositing a very narrow self-supporting border of a given height of photoresist material on such metallic layer, said border outlining the configuration of a pattern of interest of a subsequent second metal to be deposited on said thin metallic layer, said subsequent second metal becoming anodic with said first metallic layer during its etching;
c. depositing said second metal on said first metal,
d. removing said self-supporting border of photoresist exposing said first thin metallic layer;
e. removing said first thin metallic layer in those areas exposed in step d;;
f. depositing photoresist to substantially cover the pattern of interest and to substantially fill the regions previously occupied by the selfsupporting border of photoresist to thus substantially encapsulate the second metal within the pattern of interest; and
g. etching away all the anodic material not encapsulated.
2. A method for fabricating a metallic pattern on a substrate comprising the steps of:
a. depositing an adhesive and/or plating base material which becomes cathodic during a subsequent etching process on an inert substrate;
b. placing a very narrow self-supporting border of a given height of photoresist material on such cathodic material, said border outlining the configuration of a pattern of interest of subsequent anodic material to be deposited on said cathodic material;
c. depositing anodic material on said cathodic material;
d. removing said self-supporting border of photoresist exposing said cathodic material;
e. removing the cathodic material in those areas exposed in step d;;
f. depositing photoresist to substantially cover the pattern of interest and to substantially fill the regions previously occupied by the selfsupporting border of photoresist to thus substantially encapsulate the anodic material within the pattern of interest; and
g. etching away all the anodic material not encapsulated.
3. The method of claims 1 or 2 wherein the anodic material not encapsulated is removed by chemical etching.
4. The method of claim 1 wherein the first thin metallic layer is removed by back-sputter etching in those areas exposed by removal of the selfsupporting border of photoresist.
5. The method of claim 1 wherein the first thin metallic layer is removed by ion milling in those areas exposed by removal of the self-supporting border of photoresist.
6. The method of claim 2 wherein substantially all adhesive and plating base material is removed
by back-sputter etching in those areas exposed by removal of the self-supporting border of photoresist.
7. The method of claim 2 wherein substantially all adhesive and plating base material is removed by ion milling in those areas exposed by removal of the self-supporting border of photoresist.
8. The methods of claims 1 or 2 wherein the anodic material comprises an alloy of nickel and iron.
9. A pole piece for a thin film head made by the method of claim 1 or 2.
1 0. The method of claim 1 wherein said second metal is electroplated on said first metal.
11. The method of claim 2 wherein said anodic material is electroplated on said adhesive and/or plating base material.
12. The method of claim 1 wherein said second metal is deposited upon said first metal to a height that is substantially no greater than the height of the self-supporting border of photoresist.
13. The method of claim 2 wherein said anodic
material is deposited upon said cathodic material to a height that is substantially no greater than the height of the self-supporting border of photo resist.
14. The method of claims 1 or 2 wherein said narrow area is approximately 0.1 to 0.2 mils wide.
1 5. A metallic pattern formed on a substrate produced according to any one of the preceding claims.
1 6. A method of fabricating a metallic pattern on a substrate substantially as described herein with reference to the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21235980A | 1980-12-03 | 1980-12-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2088412A true GB2088412A (en) | 1982-06-09 |
| GB2088412B GB2088412B (en) | 1983-09-21 |
Family
ID=22790676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8136402A Expired GB2088412B (en) | 1980-12-03 | 1981-12-02 | Method of fabricating a metallic pattern on a substrate |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS57120675A (en) |
| DE (1) | DE3147401A1 (en) |
| FR (1) | FR2495192B1 (en) |
| GB (1) | GB2088412B (en) |
| IE (1) | IE51854B1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2533039A1 (en) * | 1982-09-15 | 1984-03-16 | Magnetic Peripherals Inc | DEPOSITION METHOD FOR PRODUCING A PARTICULARITY DESIRED ON A SUBSTRATE, IN PARTICULAR FOR FORMING MAGNETIC RECORDING HEADS IN THIN FILMS |
| EP0137923A1 (en) * | 1983-09-07 | 1985-04-24 | Sierracin Corporation | Electroconductive film system for aircraft windows |
| US4874930A (en) * | 1983-09-07 | 1989-10-17 | Sierracin Corporation | Electroconductive film system for aircraft windows |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS621552A (en) * | 1985-06-28 | 1987-01-07 | Toshiba Corp | Preparation of recording head |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2209216B1 (en) * | 1972-11-30 | 1977-09-30 | Ibm | |
| US3853715A (en) * | 1973-12-20 | 1974-12-10 | Ibm | Elimination of undercut in an anodically active metal during chemical etching |
| DE2512115C3 (en) * | 1975-03-19 | 1979-06-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Process for the production of microscopic metal and metal alloy structures for a cylindrical domain memory |
-
1981
- 1981-11-17 IE IE269181A patent/IE51854B1/en not_active IP Right Cessation
- 1981-11-30 DE DE19813147401 patent/DE3147401A1/en active Granted
- 1981-12-02 FR FR8122581A patent/FR2495192B1/en not_active Expired
- 1981-12-02 JP JP19434981A patent/JPS57120675A/en active Granted
- 1981-12-02 GB GB8136402A patent/GB2088412B/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4707586A (en) * | 1981-05-11 | 1987-11-17 | Sierracin Corporation | Electro conductive film system for aircraft windows |
| FR2533039A1 (en) * | 1982-09-15 | 1984-03-16 | Magnetic Peripherals Inc | DEPOSITION METHOD FOR PRODUCING A PARTICULARITY DESIRED ON A SUBSTRATE, IN PARTICULAR FOR FORMING MAGNETIC RECORDING HEADS IN THIN FILMS |
| EP0137923A1 (en) * | 1983-09-07 | 1985-04-24 | Sierracin Corporation | Electroconductive film system for aircraft windows |
| US4874930A (en) * | 1983-09-07 | 1989-10-17 | Sierracin Corporation | Electroconductive film system for aircraft windows |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH037756B2 (en) | 1991-02-04 |
| DE3147401A1 (en) | 1982-07-08 |
| DE3147401C2 (en) | 1990-09-06 |
| IE812691L (en) | 1982-06-03 |
| FR2495192A1 (en) | 1982-06-04 |
| FR2495192B1 (en) | 1985-11-08 |
| GB2088412B (en) | 1983-09-21 |
| JPS57120675A (en) | 1982-07-27 |
| IE51854B1 (en) | 1987-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19951202 |