GB2082763A - Infrared-sensitive Multiple Photon Detector - Google Patents
Infrared-sensitive Multiple Photon Detector Download PDFInfo
- Publication number
- GB2082763A GB2082763A GB8025091A GB8025091A GB2082763A GB 2082763 A GB2082763 A GB 2082763A GB 8025091 A GB8025091 A GB 8025091A GB 8025091 A GB8025091 A GB 8025091A GB 2082763 A GB2082763 A GB 2082763A
- Authority
- GB
- United Kingdom
- Prior art keywords
- detector
- detectors
- infrared
- radiation
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005855 radiation Effects 0.000 claims abstract description 21
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 238000004616 Pyrometry Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/28—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using photoemissive or photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/043—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
An infrared-sensitive multiple photon detector has at least two detectors 1 and 10 in vacuum and cooled by finger 14. The detectors are arranged one behind the other, without touching, in the path of a beam to be investigated. Detector 1 is a small gold-doped germanium rod having a substantially rectangular surface and layer 4 for reducing the reflection of incident radiation. Beam exit surface 2 has a convex shape, so that the radiation not absorbed by the germanium detector is focused onto substantially smaller CdHgTe detector 10. The germanium detector absorbs short-wave radiation and the CdHgTe detector absorbs long-wave radiation. <IMAGE>
Description
SPECIFICATION
Infrared-sensitive Multiple Photon Detector
This invention relates to an infrared-sensitive multiple photon detector, preferably a double detector, for contactless temperature measurement, for infrared spectroscopy and for relative pyrometry.
A variety of multiple photon detectors have been described. The journal Infrared Physics, Vol.
16, No. 5, pages 509-514, German
Offenlegungsschrift 2,119,945, British Patent 1,290,637 and German Auslegeschrift 1,439,306 describe detectors which consist of a compact piece of material. This piece of material has been treated, by diffusion or other known processes, in such a way that either diodes of differing spectral sensitivity are produced or that the material has a sensitivity depending on the thickness of the crystal. These detectors can no longer be separated without destroying them.
German Offenlegungsschrift 2,042,309 (see also British Patent 1,322,359) describes the preparation of CdHgTe multiple detectors. The individual very thin CdHgTe layers possess different spectral sensitivities over their area.
Several such layers are superposed in staggered arrangement, so that the upper layer serves as a filter for the lower layer. The journals Applied
Optics Viol. 11, No. 10, T49-T53 and Infrared
Physics, Vol. 16, pages 531-534 describe the preparation of multiple detectors which consist of
CdHgT#e layers. The very thin, homogeneous layers obtain their different spectral sensitivity as a result of a different ratio of the concentration of
Cd to Hg in the CdHgTe. As a result of the use of filters or epoxide resin adhesive layers, the infrared rays suffer a disadvantageous attenuation.
The journal Infrared Physics, Viol. 1 7, pages 419~421 describes a double detector of InSb and PbSnTe. It consists of two separate parts, and the upper InSb detector must be very thin (0.125 mm) so as still to transmit sufficiently long-wave infrared rays onto the PbSnTe detector. Because of its dimensions the InSb detector can easily be destroyed when stressed mechanically, for example through impacts or shocks.
It is an object of the invention to improve the usefulness of infrared-sensitive multiple photon detectors.
The invention solves the problem of producing mechanically stable infrared-sensitive multiple photon detectors possessing high sensitivity.
Accordingly, the present invention consists in an infrared-sensitive multiple photon detector, of which the detectors are in a vacuum and are cooled, wherein at least two detectors are arranged one behind the other, without touching, in the beam path, and at least one of the preceding detectors is of lens-shaped construction. Preferably the surfaces of the detectors which face the entering beam, and the last detector layer, are provided with an antireflection coating and the detector surfaces between these are provided with a beam-splitting coating. In particular, in the embodiment as a double photon detector, a CdHgTe detector which absorbs long-wave radiation is preceded by a rodshaped doped germanium detector which absorbs short-wave radiation, the germanium detector being in the shape of a plano-convex lens.It is possible to filter out the long-wave radiation by means of an oblique surface at the end of one germanium detector.
The multiple photon detector works on the conventional principle: each preceding detector absorbs the short-wave portion of the radiation and transmit the remaining radiation.
The device of the invention has high sensitivity and is therefore particularly suitable for measuring infrared radiation of low intensity, such as emanates, for example, from bodies at a low temperature. The preceding detectors focus the transmitted part of the infrared radiation and thereby substantially increase the efficiency of the measuring device. The sensitivity is further increased by the fact that a specific particularly advantageous material can be employed for each detector. Moreover, the anti-reflection coatings and beam-splitting coatings further improve the sensitivity. The beam-splitting coating reflects the short-wave part but transmits the long-wave part virtually unimpeded.
The germanium detectors transmit the longwave part of the radiation well. These detectors can be kept sufficiently thick so that mechanically stable lenses can be ground. The separate arrangement of the detectors assists the replacement of defective detectors.
In order that the invention may be more readily understood, reference is made to the accompanying drawings which illustrate diagrammatically and by way of example an embodiment thereof, and in which:~
Figure 1 shows a detector arrangement according to the invention, with two detectors, and
Figure 2 shows an overall representation of the device according to the invention.
The detector arrangement consists of a small gold-doped germanium rod 1 having a substantially rectangular surface of about 4 mm2 and a length of about 3 mm. At a temperature of 770K the germanium detector has its maximum sensitivity in the wavelength range of 3... 7 Hm.
Its beam exit surface 2 has a convex shape, so that the radiation not absorbed by the germanium detector is focused onto the substantially smaller
CdHgTe detector 10. The layer 4 reduces the reflection of the incident radiation up to A=l 2 um. The layer 3 reflects radiation of A < 7,um and transmits radiation of A > 7 #m. The detector is attached by means of a conductive adhesive 5 to a holder 6, which at the same time constitutes an electrical contact. The cooling finger 14 is at a temperature T=770K. The other electrical contact 8 is fastened to the detector 1 by means of solder 7.
The second detector 10, which consists of
CdHgTe, and has an active surface of (0.1 x0.1) mm2, is glued onto a carrier 9. The cooling finger 14 cools the carrier 9 to T=770K. Contacts 12 are soldered onto the detector 10 by means of indium solder 11. A layer 13 reduces the reflection of the incident infrared radiation. The detector 10 has its maximum sensitivity in the wavelength range ...... 12 Mm, and because of the complete focusing of the radiation leaving the germanium detector this sensitivity is about 400 times as great as when such focusing does not take place.
Figure 2 shows the detector arrangement, with two detectors, assembled in a Dewar vessel. The cooling finger 14 contains liquid nitrogen. The external jacket 1 5 protects the cooling finger from excessive temperature rise and maintains the vacuum 16.
The infrared radiation reaches the detector arrangement through the window 17.
Claims (5)
1. An infrared-sensitive multiple photon detector, of which the detectors are in a vacuum and are cooled, wherein at least two detectors are arranged one behind the other, without touching, in the beam path, and at least one of the preceding detectors is of lens-shaped construction.
2. A detector according to Claim 1, wherein the surfaces of the detectors which face the entering beam, and the last detector layer, are coated with an anti-reflection coating and the intermediate detector surfaces are coated with a beamsplitting coating.
3. A detector according to Claim 1, wherein a
CdHgTe detector which absorbs long-wave radiation is preceded by a rod-shaped doped germanium detector which absorbs short-wave radiation.
4. A detector according to Claim 3, wherein the germanium detector is in the shape of a planoconvex lens.
5. An infrared-sensitive multiple photon detector, substantially as herein described with reference to and as shown in the accompanying drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8025091A GB2082763A (en) | 1980-07-31 | 1980-07-31 | Infrared-sensitive Multiple Photon Detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8025091A GB2082763A (en) | 1980-07-31 | 1980-07-31 | Infrared-sensitive Multiple Photon Detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2082763A true GB2082763A (en) | 1982-03-10 |
Family
ID=10515176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8025091A Withdrawn GB2082763A (en) | 1980-07-31 | 1980-07-31 | Infrared-sensitive Multiple Photon Detector |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2082763A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2183028A (en) * | 1985-11-14 | 1987-05-28 | United Technologies Corp | Photodetector module for a dual spectra optical pyrometer |
| US4833898A (en) * | 1987-01-07 | 1989-05-30 | Ford Aerospace & Communications Corporation | Multi-detector dewar |
| US4918929A (en) * | 1987-07-01 | 1990-04-24 | Ford Aerospace Corporation | Multi-detector dewar |
| GB2228824A (en) * | 1989-03-01 | 1990-09-05 | Gen Electric Co Plc | Radiation detectors |
-
1980
- 1980-07-31 GB GB8025091A patent/GB2082763A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2183028A (en) * | 1985-11-14 | 1987-05-28 | United Technologies Corp | Photodetector module for a dual spectra optical pyrometer |
| GB2183028B (en) * | 1985-11-14 | 1989-11-29 | United Technologies Corp | A dual spectra optical pyrometer having a serial array of photodetectors |
| US4833898A (en) * | 1987-01-07 | 1989-05-30 | Ford Aerospace & Communications Corporation | Multi-detector dewar |
| US4918929A (en) * | 1987-07-01 | 1990-04-24 | Ford Aerospace Corporation | Multi-detector dewar |
| GB2228824A (en) * | 1989-03-01 | 1990-09-05 | Gen Electric Co Plc | Radiation detectors |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |