GB2073519B - Complementary metal oxide semiconductor integrated circuit including a voltage regulator for a section operated at low voltage - Google Patents
Complementary metal oxide semiconductor integrated circuit including a voltage regulator for a section operated at low voltageInfo
- Publication number
- GB2073519B GB2073519B GB8011323A GB8011323A GB2073519B GB 2073519 B GB2073519 B GB 2073519B GB 8011323 A GB8011323 A GB 8011323A GB 8011323 A GB8011323 A GB 8011323A GB 2073519 B GB2073519 B GB 2073519B
- Authority
- GB
- United Kingdom
- Prior art keywords
- integrated circuit
- metal oxide
- oxide semiconductor
- semiconductor integrated
- circuit including
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000295 complement effect Effects 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8011323A GB2073519B (en) | 1980-04-03 | 1980-04-03 | Complementary metal oxide semiconductor integrated circuit including a voltage regulator for a section operated at low voltage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8011323A GB2073519B (en) | 1980-04-03 | 1980-04-03 | Complementary metal oxide semiconductor integrated circuit including a voltage regulator for a section operated at low voltage |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2073519A GB2073519A (en) | 1981-10-14 |
GB2073519B true GB2073519B (en) | 1984-04-18 |
Family
ID=10512600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8011323A Expired GB2073519B (en) | 1980-04-03 | 1980-04-03 | Complementary metal oxide semiconductor integrated circuit including a voltage regulator for a section operated at low voltage |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2073519B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2207315B (en) * | 1987-06-08 | 1991-08-07 | Philips Electronic Associated | High voltage semiconductor with integrated low voltage circuitry |
JPH0673092B2 (en) * | 1988-04-12 | 1994-09-14 | 日本電気株式会社 | Constant voltage generator |
WO1995019046A1 (en) * | 1994-01-10 | 1995-07-13 | Carnegie Mellon University | Four rail circuit architecture for ultra-low power and voltage cmos circuit design |
US5814845A (en) * | 1995-01-10 | 1998-09-29 | Carnegie Mellon University | Four rail circuit architecture for ultra-low power and voltage CMOS circuit design |
US6366061B1 (en) | 1999-01-13 | 2002-04-02 | Carnegie Mellon University | Multiple power supply circuit architecture |
-
1980
- 1980-04-03 GB GB8011323A patent/GB2073519B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2073519A (en) | 1981-10-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |