GB2070331B - Vertical mosfet with a shield electrode - Google Patents

Vertical mosfet with a shield electrode

Info

Publication number
GB2070331B
GB2070331B GB8104365A GB8104365A GB2070331B GB 2070331 B GB2070331 B GB 2070331B GB 8104365 A GB8104365 A GB 8104365A GB 8104365 A GB8104365 A GB 8104365A GB 2070331 B GB2070331 B GB 2070331B
Authority
GB
United Kingdom
Prior art keywords
shield electrode
vertical mosfet
mosfet
vertical
shield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8104365A
Other versions
GB2070331A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB2070331A publication Critical patent/GB2070331A/en
Application granted granted Critical
Publication of GB2070331B publication Critical patent/GB2070331B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
GB8104365A 1980-02-22 1981-02-12 Vertical mosfet with a shield electrode Expired GB2070331B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12371580A 1980-02-22 1980-02-22

Publications (2)

Publication Number Publication Date
GB2070331A GB2070331A (en) 1981-09-03
GB2070331B true GB2070331B (en) 1984-05-23

Family

ID=22410424

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8104365A Expired GB2070331B (en) 1980-02-22 1981-02-12 Vertical mosfet with a shield electrode

Country Status (8)

Country Link
JP (1) JPS56131961A (en)
DE (1) DE3105693A1 (en)
FR (1) FR2476914B1 (en)
GB (1) GB2070331B (en)
IT (1) IT1135091B (en)
PL (1) PL136606B1 (en)
SE (1) SE456291B (en)
YU (1) YU41520B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141964A (en) * 1981-02-26 1982-09-02 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
DE3210353A1 (en) * 1982-03-20 1983-09-22 Robert Bosch Gmbh, 7000 Stuttgart MONOLITHICALLY INTEGRATED DARLINGTON CIRCUIT
EP0207178A1 (en) * 1985-06-25 1987-01-07 Eaton Corporation Bidirectional power fet with field shaping
EP0205639A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Bidirectional power fet with substrate referenced shield
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
DE3465225D1 (en) * 1983-02-17 1987-09-10 Nissan Motor A vertical-type mosfet and method of fabricating the same
EP0205640A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Lateral bidirectional shielded notch fet
SG165138A1 (en) * 2000-07-12 2010-10-28 Inst Of Microelectronics A semiconductor device
JP5362955B2 (en) * 2003-01-21 2013-12-11 ノース−ウエスト ユニヴァーシティ High-speed switching insulated gate power semiconductor device
US7276747B2 (en) * 2005-04-25 2007-10-02 Semiconductor Components Industries, L.L.C. Semiconductor device having screening electrode and method
CN102569385B (en) * 2010-12-17 2015-04-08 上海华虹宏力半导体制造有限公司 VDMOS (vertical double-diffused metal oxide semiconductor) structure provided with shielding grid and preparation method thereof
CN102569386B (en) * 2010-12-17 2015-02-04 上海华虹宏力半导体制造有限公司 VDMOS (vertical double-diffused metal oxide semiconductor) device with shield grid and preparation method of VDMOS device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1132810A (en) * 1966-03-30 1968-11-06 Matsushita Electronics Corp Field-effect transistor having insulated gates
GB1316555A (en) * 1969-08-12 1973-05-09
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
GB1423449A (en) * 1973-07-27 1976-02-04 Standard Telephones Cables Ltd Semiconductor device
JPS52106688A (en) * 1976-03-05 1977-09-07 Nec Corp Field-effect transistor

Also Published As

Publication number Publication date
DE3105693A1 (en) 1981-11-26
IT8119216A0 (en) 1981-01-20
JPH0213830B2 (en) 1990-04-05
YU41520B (en) 1987-08-31
DE3105693C2 (en) 1992-12-10
YU42481A (en) 1983-06-30
PL229786A1 (en) 1981-09-18
IT1135091B (en) 1986-08-20
JPS56131961A (en) 1981-10-15
PL136606B1 (en) 1986-03-31
SE8100148L (en) 1981-08-23
FR2476914B1 (en) 1985-10-18
SE456291B (en) 1988-09-19
GB2070331A (en) 1981-09-03
FR2476914A1 (en) 1981-08-28

Similar Documents

Publication Publication Date Title
GB2067411B (en) Electrode lead
DE3166638D1 (en) Implantable electrode
DE3377017D1 (en) Modified electrode
DE3377528D1 (en) Reference electrode
GB2068813B (en) Welding electrode
DE3169671D1 (en) Electrode
ZA817441B (en) Anode
JPS5717926A (en) Electrolytic device
GB2070331B (en) Vertical mosfet with a shield electrode
GB8330133D0 (en) Electrode structure
GB2084860B (en) Face shield
DE3176510D1 (en) Reference electrode
GB2074190B (en) Electrode
GB8319710D0 (en) Counter electrode
GB2128397B (en) Electrode
JPS57141889A (en) Electrode
GB2075380B (en) Rectangular electrode
ZM2181A1 (en) Anode
GB2066965B (en) Reference electrode
GB8330134D0 (en) Electrode structure
GB8407234D0 (en) Electrode structure
JPS5749177A (en) Grounding electrode
DE3271945D1 (en) High tension shielding electrode
GB2115471B (en) Shield construction cap
JPS56167099A (en) Shield excavator

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19970212