GB2069236B - Junction gate field effect transistor - Google Patents

Junction gate field effect transistor

Info

Publication number
GB2069236B
GB2069236B GB8100182A GB8100182A GB2069236B GB 2069236 B GB2069236 B GB 2069236B GB 8100182 A GB8100182 A GB 8100182A GB 8100182 A GB8100182 A GB 8100182A GB 2069236 B GB2069236 B GB 2069236B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
gate field
junction gate
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8100182A
Other versions
GB2069236A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB2069236A publication Critical patent/GB2069236A/en
Application granted granted Critical
Publication of GB2069236B publication Critical patent/GB2069236B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
GB8100182A 1980-01-09 1981-01-06 Junction gate field effect transistor Expired GB2069236B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53780A JPS5698876A (en) 1980-01-09 1980-01-09 Junction type fet

Publications (2)

Publication Number Publication Date
GB2069236A GB2069236A (en) 1981-08-19
GB2069236B true GB2069236B (en) 1984-05-23

Family

ID=11476495

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8100182A Expired GB2069236B (en) 1980-01-09 1981-01-06 Junction gate field effect transistor

Country Status (2)

Country Link
JP (1) JPS5698876A (en)
GB (1) GB2069236B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE502004006649D1 (en) * 2003-11-14 2008-05-08 Rieter Ag Maschf Round comb with clothing elements
US9202934B2 (en) * 2013-10-16 2015-12-01 Analog Devices Global Junction field effect transistor, and method of manufacture thereof

Also Published As

Publication number Publication date
JPS5698876A (en) 1981-08-08
GB2069236A (en) 1981-08-19

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19990106