GB2054957A - Avalanche photodiode - Google Patents
Avalanche photodiode Download PDFInfo
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- GB2054957A GB2054957A GB8021861A GB8021861A GB2054957A GB 2054957 A GB2054957 A GB 2054957A GB 8021861 A GB8021861 A GB 8021861A GB 8021861 A GB8021861 A GB 8021861A GB 2054957 A GB2054957 A GB 2054957A
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- Prior art keywords
- avalanche photodiode
- absorbing layer
- region
- amplifying region
- semiconductor
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- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 38
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 18
- 230000015556 catabolic process Effects 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910005542 GaSb Inorganic materials 0.000 claims 1
- 229910008310 Si—Ge Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000011358 absorbing material Substances 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
An avalanche photodiode in which an amplifying region is formed by a pn junction in a first semiconductor material (1) which is directly or indirectly bounded on one side by a layer (2) of a second semiconductor material in which the light is absorbed whose ratio of ionization coefficients of electrons and holes is nearer unity than the corresponding ratio for the material of the amplifying region. Typically, the s.c. material of the amplifying region is Si, and that of the absorbing layer is Ge, Ga In As P, Ga In As, or Cn In Se2. <IMAGE>
Description
SPECIFICATION
Avalanche photodiode
The present invention relates to avalanche
photodiodes as can be used, for example, as
receivers in optical communication systems.
Known avalanche photodiodes are fabricated
from elemental semiconductors, chiefly silicon,
from compound semiconductors or from
semiconductor alloys.
Basic designs of silicon avalanche photodiodes
are described, for example, in an article by M.L.J.
Bollen et al, "Die Avalanche-Fotodiode", Philips
techn. Rdsch. 36, 1976/77, No. 7, pp. 220-226.
The region in which the amplification of the
minority carriers, i.e., the avalanche effect, takes
place is formed by an n±type and a p-type silicon
layer. Instead of a pn junction, a metal
semiconductor junction with reverse-bias
characteristics may be used, of course. Since the
silicon (amplifying region) does not absorb
radiation strongly, particularly at the usual
transmitter wave-lengths around 1 ,item, a
relatively thick 7t-type silicon layer absorbing a
major part of the incident radiation (absorbing
layer) is added to the amplifying region. In an
embodiment described in an article by A. Atamann
and J. Miller, "Double-mesa reach-through
avalanche photodiodes with a large gain
bandwidth product made from thin silicon films",
J. Appl.Phys. 49 (10), Oct. 1978, pp. 5324 to
5331, thicknesses of 0.2 to 0.3 ym are given for
the p- and n-type layers in the amplifying region,
while thicknesses ranging from 5 to 20 Mm are
given for the absorbing layer.
A major factor determining the gain
characteristics of the avalanche photodiode is the
electron-hole ionization coefficient in the
semiconductor material used, as is shown in the
aforementioned article in "Philips
techn.Rundschau". The more this ratio differs from
unity, the lower the noise level will be. In the
literature the following ratios are given, for example: for Si :45, for Ge :0.5 (H. Melchior, J.
Lumines, "Sensitive High Speed Photodetectors for the Demodulation of Visible and Near Infrared
Light", Journal of Luminescence 7 (1973), pp.
390~414), and for GaO In0,53 As : 5 (T.P.
Pearsall and N. Papuchon, "The Gay 47 In0,53 As
Homojunction Photodiode - A New Avalanche
Photodetector in the Near Infrared between 1.0 and 1.6 tom", Appl. Phys. Lett. 33 (7), 1 Oct.
1978, pp. 640~642).
As is apparent from the references cited, silicon has the best gain characteristics of the semiconductor materials known so far. Since silicon does not absorb wave-lengths of, e.g., 1.2 or 1.6 ,tom, at which the glass fibres used in optical communication systems have attenuation minima, many teams have tried to develop avalanche diodes based on compound semiconductors and semiconductor alloys, which should have good absorption and gain characteristics.
The paper by Pearsall et al in "Appl. Phys, Lett." has already been mentioned. In that paper and in others, such as one by T.P. Lee et al, "lnGaAsP/lnP Photodiodes: Microplasma-Limited
Avalanche Multiplication at 1-1.3-#m Wavelength", IEEE J. Qu. El., Vol. QE-15, No. 1, Jan. 1979, pp. 30 to 35, the difficulties encounted with these new avalanche photodiodes in respect to dark currents and microplasma breakdowns are discussed.
An object of the invention is to design an avalanche photodiode with an amplifying region, consisting of a pn junction or a metalsemiconductor junction with reverse-bias characteristics, and with a semiconductor layer which is deposited as an absorbing layer on the semiconductor of the amplifying region and absorbs most of the total radiation absorbed by the diode in such a way that optimum absorption characteristics and high gain are achieved whilst minimising problems arising with respect to microplasma discharges.
According to the present invention there is provided an avalanche photodiode having an amplifying region containing a pn junction, or a metal-semiconductor junction with reverse bias characteristics, which amplifying region is directly or indirectly bounded on one side by an absorbing layer of semiconductor material, wherein the ratio of the ionization co-efficients of electrons and holes in the semiconductive region is further removed from unity than the corresponding ratio for the semi-conductor material of the absorbing layer, and wherein the absorbing layer has the same conductivity type as that as the adjacent semiconductor material of the amplifying region.
As mentioned earlier, silicon is one of the materials having excellent gain characteristics. It permits a high gain at low excess noise. A layer of a strongly absorbing semiconductor is deposited on a layer of a semiconductor having good gain characteristics. Which semiconductor materials are suitable for which wavelength to be absorbed is readily apparent from tables of the extensive literature.
In one embodiment, leakage currents due to carrier re-combination at lattice defects or microplasma breakdowns can be reduced or excluded by matching the lattice constants of the different semiconductor layers.
Another embodiment permits operation at high field strengths in the amplifying region while keeping the field strength in the absorbing layer low. As a result, the absorbing layer can be polycrystalline or amorphous.
If the amplifying region is made of a semiconductor material having very few crystalline defects, the photodiode can be operated at especially high field strengths without any microplasma breakdowns occurring.
Embodiments of the invention will now be explained in more detail with reference to the accompanying drawings, in which:
Fig. 1 shows an avalanche photodiode with a structure according to the invention;
Fig. 2 shows the field distribution in the diode of Fig. 1; Fig. 3 shows the field distribution in an improved form of such an avalanche photodiode;
Fig. 4 shows the structure of an avalanche photodiode having the field distribution of Fig. 3, and
Fig. 5 shows a cross section of an avalanche photodiode according to the invention.
Fig. 1 shows the structure of an avalanche photodiode according to the invention. The diode consists of an amplifying region 1 made up of two semiconductor layers of different conductivity type, an absorbing layer 2 formed by a semiconductor layer, and contacts 3. In the embodiment shown, the radiation S preferably enters the diode from the side of the amplifying region. This is indicated in the figure by an arrow.
The amplifying region is made of a semiconductor material having particularly good gain characteristics. In the example of Fig. 1, silicon was chosen for this region. In silicon, the ionization coefficient for electrons is up to 40 times as high as that for holes. This ratio, which differs widely from unity, ensures high gain at minimum noise, as is apparent from the article in "Philips Techn. Rundschau". The relatively large bandwidth in silicon results in small thermal dark currents, which has an advantageous effect on the amplifier's noise characteristics. In addition, silicon is the semiconductor material which can so far be produced in the best single-crystal quality, i.e., with the smallest number of crystalline defects.As a result, fields of relatively high strength can be set up in silicon without any local breakdowns (microplasma breakdowns) occurring
In semiconductor materials which are more difficult to produce, such as in most ternary and quaternary semiconductors, local breakdowns frequently set in before the onset of the avalanche effect within the bulk of the semiconductor material (see, for example, the above-cited article by Lee et al).
An n+p junction in silicon as shown in the example of Fig. 1 is widely used in practice.
Instead of the semiconductor junction, it is, of course, possible to use a semiconductor-metal junction with reverse-bias characteristics, e.g. a psilicon-gold junction.
The absorbing layer 2 in Fig. 1 is made of Ga0#7In0,53As, which has an absorption maximum at about 1.62 #m and, consequently, is very well suited for use as an absorbing material for the 1.6 arm transmitter wavelength used in optical communication systems. In general, a semiconductor whose band gap is equal to or slightly smaller than the quantum energy of the radiation to be received will be chosen for the absorbing layer. This follows directly from the absorption mechanism of semi-conductors.
In the embodiment, the Ga0,47ln0,53As is very lightly p-doped, with an acceptor density of about 1016 Zn/cm3 (#-semiconductor). This light doping is part of the conventional avalanche-photodiode technology (see, for example, Bollen et al in "Philips Techn. Rundschau").
The ohmic contacts 3 are, respectively, Au-Ti evaporated on silicon and Au-ln-Ti evaporated on GaO 471nO.53As; they are produced by conventional techniques.
Toward shorter wavelengths from the band gap, semiconductors absorb radiation over a wide bandwidth. For wavelengths suitable for optical.
communication, in the range from about 1 to 1.6 ,tom, germanium is a very good absorbing material, too. Like silicon, it can be produced in the highest crystal quality; in addition, the difference between its lattice constant and that of Si can be accommodated by means of Ge-Si intermediate layers. In this manner, lattice defects, which always result in leakage currents due to carrier recombination and, at high field strengths, in local breakdowns, are also avoided at the junction between Ge and Si. The lattice constant of Si is 5.34 A, and that of Ge is 5.66 A. Such a Ge-Si alloy-semiconductor layer can also be used as an absorbing layer.
Fig. 2 shows schematically the field distribution in the diode structure of Fig. 1. The highest field strength is at the pn junction. The y-axis' represents different field strengths, namely Ev, EM, ED The desired amplification takes place in that area of the diode where the field strength is approximately Ev and greater than Ev. EM is an average field strength, at which microplasma breakdowns occur due to local increases in field strength at crystal imperfections. A semiconductor material is suitable for the amplifying region only if it can be produced in such a good quality that no local breakdowns occur before amplification sets in at the field strength EV. ED is the field strength at which free charge carriers have saturation drift velocity.The field strengths in the absorbing layer 1 and in the amplifying region 2 are different; in
Figs. 2 and 3, they are designated by the indices 1 and 2.
It is a prerequisite to low-noise operation of the avalanche photodiode that.no microplasma breakdowns at a field strength EM < EV prevent the attainment of the field strength EV. For the amplifying region, this is easy to achieve if Si is used, which is of high crystal quality.
As is also apparent from Fig. 2, the fielddistribution curve in the amplifying region is very steep. As a result, crystal imperfections acting from the absorbing-layer/amplifying-region interface into the latter region may easily cause additional increases in field strength, which result in the field strength for microplasma breakdowns being reached locally in the amplifying region.
Another disadvantage of the field strength distribution of Fig. 2 resides in the fact that in parts of the absorbing layer, the field strength remains below the field strength EDT which is required to reach saturation drift velocity, in one part of the layer, and considerably exceeds it in another. It would be ideal if the field strength ED could be approximately maintained over the entire layer.
Both disadvantages are overcome by a field distribution as shown in Fig. 3. A lightly doped region 4 made of the semiconductor material of the amplifying region 1 but being of the conductivity type of the absorbing layer 2 is inserted between the amplifying region and the absorbing layer. This region ensures that crystal imperfections at the interfaces due to lattice mismatch between the semiconductor materials can no longer affect the amplifying region.
Therefore, even polycrystalline or amorphous material can be used for the absorbing layer.
The provision of an absorbing layer 2 is followed by that of a heavily doped region 5 of the same conductivity type as the absorbing layer.
This region 5 permits the field strength through the absorbing layer to be maintained higher than or equal to the field strength ED, required to reach saturation drift velocity; only in the region 5 is the field strength reduced to zero. This measure is described, for example, in the article by Bollen et al in "Philips Techn. Rdsch.". If this heavily doped region 5 is made of a semiconductor material which does not absorb the incident radiation, the absorbing layer can be illuminated through this region. In a Ga1~xincAs photodiode, an absorbing semiconductor material suitable for this purpose is inP, for example. The succession of layers of Fig. 1 could thus be modified as follows: n+Si, pSi, 7rSi, 'rGa 1##In#As, p+lnP.
An embodiment is shown in Fig. 4. The amplifying region 1 is made of n+Si and pSi, and it is followed by a field-strength-reducing 7rSi region 4. Deposited on the absorbing layer 2, made of sTGe, is a heavily doped p+Ge region 5. The contacts 3 are produced by evaporating Au-Ti.
Fig. 5 shows a section of an avalanche photodiode according to the invention, which is fabricated as follows. The supporting material is a 7rS; substrate, into which a p layer and an n+ layer are diffused by the method described in the above-cited paper by Ataman et al in "J. Appl.
Phys.". The p and n+Si layers are 0.2-0.4 #m thick. Following the diffusion, an Au-Ti layer is evaporated to provide ohmic contact, but a "window" 6 is left open, i.e., an Au-Ti-free region above the pn junction, through which the finished diode is illuminated. The substrate so treated is soldered on to a gold base having a hole 7, through which the radiation S can penetrate into the diode. So far, the manufacturing process corresponds to that described in the paper mentioned above. In the next step, the 7rSi substrate is etched down to a thickness of about 3 ,tom.
Then the absorbing layer is deposited. This is done, for example, by gas-phase epitaxy or by melting on r-germanium. The layer thickness of the germanium depends on the wavelength to be absorbed. At 1.2 #im wavelength, the germaniumlayer thickness is about 1.5--2 #rm; at 1.5 #m wavelength it is about 10 ,tom. In the Ir-germanium layer, the p+Ge top layer is produced by ion implantation. Finally, the diode is mesa-etched to the usual, advantageous shape. Ohmic contact is again provided by evaporating Au-Ti.
This diode is intended to be illuminated through the amplifying region. This is possible virtually without losses because the amplifying region, because of its higher band gap, transmits wavelengths longer than 1.1 film.
Illumination of the absorbing layer from the side is particularly advantageous if very long wavelengths are to be received, at which only very weak absorption takes place such as in certain semiconductors involving indirect transitions.
Through the lateral illumination, the effective absorption length is equal to the lateral extension of the absorbing layer, and not equal to the layer thickness; therefore, it can be made very large without increasing the carrier drift transit time, as would be the case if the layer thickness were increased.
In structures other than those described here, it may turn out to be necessary to provide the junction in the amplifying region with a known guard-ring structure in order to avoid microplasma breakdowns and edge-area currents in the edge areas of the junction.
The semiconductor layers are either elemental semiconductors, such as Ge or Si, compound semiconductors, such as GaAs, InP or Culn Se2, or alloy semiconductors, such as Ga 1-x In, As or Gat~x In,~, As1~v Pv. The layers are preferably single crystals and, especially in the amplifying region, of highest crystal quality. The absorbing layer can also be polycrystalline or amorphous if a field-strength-reducing region is used between the amplifying region and the absorbing layer.
In connection with Fig. 3 and when explaining the operation of the heavily doped region 5 it has already been stated that the field caused by the reverse voltage reaches through the entire absorbing layer 2. This is particularly necessary if diodes with high switching speeds are to be fabricated. In the entire absorbing layer the field strength should be so high that saturation drift velocity is reached throughout the layer.
Analogously with what has been described so far, it is, of course, possible, instead of using only one semiconductor material for the absorbing layer, to dispose several semiconductor materials which absorb different wavelengths side by side.
Although the foregoing examples of photodiodes have all been separate components, the diodes according to the invention can also form part of integrated circuits based on Si, GaAs or InP, for example. By depositing an absorbing layer of different semiconductor materials on different areas of amplifying regions of the integrated circuit, the latter can be made sensitive to different wavelengths to be received.
Claims (20)
1. An avalanche photodiode having an amplifying region containing a pn junction, or a metal-semiconductor junction with reverse bias characteristics, which amplifying region is directly or indirectly bounded on one side by an absorbing layer of semiconductor material, wherein the ratio of the ionization co-efficients of electrons and holes in the semiconductive region is further removed from unity than the corresponding ratio for the semiconductor material of the absorbing layer, and wherein the absorbing layer has the same conductivity type as that as the adjacent semiconductor material of the amplifying region.
2. An avalanche photodiode as claimed in claim 1, wherein the semiconductor material of the amplifying region is silicon.
3. An avalanche photodiode as claimed in claim 1 , wherein the semiconductor material of the amplifying region is GaAs, InP, GaSb or an alloy of these materials.
4. An avalanche photodiode as claimed in any preceding claim wherein the band-gap of the semiconductor material of the amplifying region is equal to or greater than that of this absorbing layer.
5. An avalanche photodiode as claimed in any preceding claim, wherein the semiconductor material of the absorbing layer is germanium, Ga1-xlnxAs1-yPyf Ga,~,ln,As, Ga,~xAIxAsl~ySby, GaAs1~xSbx or CulnSe2.
6. An avalanche photodiode as claimed in any preceding claim, wherein the lattice constants of the semiconductor materials of the absorbing layer and of the amplifying region are substantially matched.
7. An avalanche photodiode as claimed in claim 5, wherein the semiconductor materials of the amplifying region and the absorbing layer are respectively Si and Ge, and wherein the mismatch of lattice constants are accommodated by means of Si-Ge intermediate layers.
8. An avalanche photodiode as claimed in any preceding claim, wherein a region made of the semiconductor material of the amplifying region and being of the same conductivity type as, but having a lower doping level (or or v semiconductor| than, the absorbing layer lies between the amplifying region and the absorbing layer.
9. An avalanche photodiode as claimed in any preceding claim, wherein the semiconductor of the absorbing layer is lightly doped, and a heavily doped region of the same conductivity type as the absorbing layer is deposited on that side of the absorbing layer facing away from the amplifying region.
10. An avalanche photodiode as claimed in claim 9, wherein the heavily doped region does not absorb radiation at wavelengths at which the absorbing layer absorbs radiations.
11. An avalanche photodiode as claimed in any preceding claim wherein the diode is illuminated through the amplifying region.
12. An avalanche photodiode as claimed in any one of claims 1 to 10, wherein the diode is illuminated from the side.
13. An avalanche photodiode as claimed in claim 10, wherein the diode is illuminated through the heavily doped region.
14. An avalanche photodiode as claimed in any preceding claim, wherein the semiconducturs are single crystals.
15. An avalanche photodiode as claimed in any one of claims 1 to 13, wherein the absorbing layer is polycrystalline or amorphous.
16. An avalanche photodiode as claimed in any one of claims 1 to 1 5, wherein the amplifying region is provided with a guard-ring structure.
17. An avalanche photodiode as claimed in any preceding claim, wherein the absorbing layer is doped so that, when a reverse voltage is applied, the field produced reaches through the entire absorbing layer without producing avalanche breakdown in the dark.
18. An avalanche photodiode as claimed in any preceding claim, wherein several different semiconductor materials are deposited side by side as absorbing layers directly or indirectly on the amplifying region.
19. An avalanche photodiode substantially as hereinbefore described with reference to the accompanying drawings.
20. An avalanche photodiode as claimed in any preceding claim, wherein the diode forms part of an integrated circuit.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19792927183 DE2927183A1 (en) | 1979-07-05 | 1979-07-05 | AVALANCHE PHOTODIOD |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2054957A true GB2054957A (en) | 1981-02-18 |
Family
ID=6074982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8021861A Withdrawn GB2054957A (en) | 1979-07-05 | 1980-07-03 | Avalanche photodiode |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2927183A1 (en) |
| GB (1) | GB2054957A (en) |
| NZ (1) | NZ194140A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006119198A1 (en) * | 2005-05-03 | 2006-11-09 | Intel Corporation | Semiconductor waveguide-based avalanche photodetector with separate absorption and multiplication regions |
| US7683397B2 (en) | 2006-07-20 | 2010-03-23 | Intel Corporation | Semi-planar avalanche photodiode |
| US7741657B2 (en) | 2006-07-17 | 2010-06-22 | Intel Corporation | Inverted planar avalanche photodiode |
| US8338857B2 (en) | 2005-06-28 | 2012-12-25 | Intel Corporation | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
-
1979
- 1979-07-05 DE DE19792927183 patent/DE2927183A1/en not_active Ceased
-
1980
- 1980-06-25 NZ NZ19414080A patent/NZ194140A/en unknown
- 1980-07-03 GB GB8021861A patent/GB2054957A/en not_active Withdrawn
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006119198A1 (en) * | 2005-05-03 | 2006-11-09 | Intel Corporation | Semiconductor waveguide-based avalanche photodetector with separate absorption and multiplication regions |
| US7209623B2 (en) | 2005-05-03 | 2007-04-24 | Intel Corporation | Semiconductor waveguide-based avalanche photodetector with separate absorption and multiplication regions |
| US8338857B2 (en) | 2005-06-28 | 2012-12-25 | Intel Corporation | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
| US8829566B2 (en) | 2005-06-28 | 2014-09-09 | Intel Corporation | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
| US7741657B2 (en) | 2006-07-17 | 2010-06-22 | Intel Corporation | Inverted planar avalanche photodiode |
| DE112007001622B4 (en) * | 2006-07-17 | 2013-02-21 | Intel Corp. | Arrangement of an inverted planar avalanche photodiode, method for its operation and system with said arrangement |
| US7683397B2 (en) | 2006-07-20 | 2010-03-23 | Intel Corporation | Semi-planar avalanche photodiode |
| DE112007001636B4 (en) * | 2006-07-20 | 2013-04-04 | Intel Corporation | Arrangement and system with a semi-planar avalanche photodiode and method of operation thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2927183A1 (en) | 1981-01-08 |
| NZ194140A (en) | 1983-09-30 |
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