GB2049282A - High voltage junction solid-state switch - Google Patents
High voltage junction solid-state switchInfo
- Publication number
- GB2049282A GB2049282A GB8025969A GB8025969A GB2049282A GB 2049282 A GB2049282 A GB 2049282A GB 8025969 A GB8025969 A GB 8025969A GB 8025969 A GB8025969 A GB 8025969A GB 2049282 A GB2049282 A GB 2049282A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- type
- semiconductor body
- high voltage
- state switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 2
- 230000002457 bidirectional effect Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G25/00—Watering gardens, fields, sports grounds or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0817—Thyristors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Environmental Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Water Supply & Treatment (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
A high voltage solid-state switch, which allows alternating or direct current operation and provides bidirectional blocking, consists of a first p type semiconductor body (16, 16a) on an n type semiconductor wafer substrate (12). A p+ type anode region (18, 18a) and an n+ type cathode region (24, 24a) exist in portions of the semiconductor body (16, 16a). A second p type region (22, 22a) of higher impurity concentration than the semiconductor body (16, 16a) encircles the cathode region (24, 24a). The anode region (18, 18a) and second p type region (22, 22a) are separated from each other by a portion of the semiconductor body (16, 16a). The semiconductor wafer substrate (12), which acts as a gate, is adapted to allow low resistance contact thereto. Separated low resistance contacts are made to the anode region (18, 18a) and to the cathode region (24, 24a).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US97188678A | 1978-12-20 | 1978-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2049282A true GB2049282A (en) | 1980-12-17 |
GB2049282B GB2049282B (en) | 1983-05-18 |
Family
ID=25518914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8025969A Expired GB2049282B (en) | 1978-12-20 | 1979-12-06 | High voltage junction solid-state switch |
Country Status (22)
Country | Link |
---|---|
JP (1) | JPS55501041A (en) |
KR (1) | KR830000497B1 (en) |
AU (1) | AU529486B2 (en) |
BE (1) | BE880727A (en) |
CA (1) | CA1131800A (en) |
CH (1) | CH659152A5 (en) |
DD (1) | DD147898A5 (en) |
ES (1) | ES487065A1 (en) |
FR (1) | FR2445028B1 (en) |
GB (1) | GB2049282B (en) |
HK (1) | HK69284A (en) |
HU (1) | HU181028B (en) |
IE (1) | IE48719B1 (en) |
IL (1) | IL58973A (en) |
IN (1) | IN152898B (en) |
IT (1) | IT1126602B (en) |
NL (1) | NL7920185A (en) |
PL (1) | PL220496A1 (en) |
SE (1) | SE438577B (en) |
SG (1) | SG34884G (en) |
TR (1) | TR21213A (en) |
WO (1) | WO1980001338A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3017313A1 (en) * | 1980-05-06 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | THYRISTOR WITH HIGH BLOCKING VOLTAGE AND METHOD FOR THE PRODUCTION THEREOF |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4933432B1 (en) * | 1968-12-20 | 1974-09-06 | ||
DE2102103A1 (en) * | 1970-01-22 | 1971-07-29 | Rca Corp | Field effect controlled diode |
US3722079A (en) * | 1970-06-05 | 1973-03-27 | Radiation Inc | Process for forming buried layers to reduce collector resistance in top contact transistors |
DE2241600A1 (en) * | 1971-08-26 | 1973-03-01 | Dionics Inc | HIGH VOLTAGE P-N TRANSITION AND ITS APPLICATION IN SEMICONDUCTOR SWITCHING ELEMENTS, AND THE PROCESS FOR ITS MANUFACTURING |
JPS5011389A (en) * | 1973-05-30 | 1975-02-05 | ||
US3911463A (en) * | 1974-01-07 | 1975-10-07 | Gen Electric | Planar unijunction transistor |
US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
JPS5168777A (en) * | 1974-12-11 | 1976-06-14 | Fujitsu Ltd | FUSEITEIKOHANDOTAISOCHI |
JPS5250176A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Electrostatic induction type thyristor |
GB1587540A (en) * | 1977-12-20 | 1981-04-08 | Philips Electronic Associated | Gate turn-off diodes and arrangements including such diodes |
-
1979
- 1979-11-28 CA CA340,799A patent/CA1131800A/en not_active Expired
- 1979-12-06 WO PCT/US1979/001044 patent/WO1980001338A1/en unknown
- 1979-12-06 GB GB8025969A patent/GB2049282B/en not_active Expired
- 1979-12-06 CH CH6267/80A patent/CH659152A5/en not_active IP Right Cessation
- 1979-12-06 JP JP50020880A patent/JPS55501041A/ja active Pending
- 1979-12-06 NL NL7920185A patent/NL7920185A/en not_active Application Discontinuation
- 1979-12-10 HU HU79WE612A patent/HU181028B/en unknown
- 1979-12-14 AU AU53868/79A patent/AU529486B2/en not_active Ceased
- 1979-12-14 DD DD79217695A patent/DD147898A5/en unknown
- 1979-12-17 IL IL58973A patent/IL58973A/en unknown
- 1979-12-18 TR TR21213A patent/TR21213A/en unknown
- 1979-12-18 FR FR7930941A patent/FR2445028B1/en not_active Expired
- 1979-12-18 PL PL22049679A patent/PL220496A1/xx unknown
- 1979-12-19 BE BE0/198640A patent/BE880727A/en not_active IP Right Cessation
- 1979-12-19 IE IE2473/79A patent/IE48719B1/en unknown
- 1979-12-19 ES ES487065A patent/ES487065A1/en not_active Expired
- 1979-12-19 IT IT28205/79A patent/IT1126602B/en active
- 1979-12-20 KR KR7904541A patent/KR830000497B1/en active
-
1980
- 1980-08-14 SE SE8005746A patent/SE438577B/en not_active IP Right Cessation
- 1980-11-28 IN IN1327/CAL/80A patent/IN152898B/en unknown
-
1984
- 1984-05-04 SG SG348/84A patent/SG34884G/en unknown
- 1984-09-06 HK HK692/84A patent/HK69284A/en unknown
Also Published As
Publication number | Publication date |
---|---|
IN152898B (en) | 1984-04-28 |
HK69284A (en) | 1984-09-14 |
SG34884G (en) | 1985-11-15 |
JPS55501041A (en) | 1980-11-27 |
IT1126602B (en) | 1986-05-21 |
TR21213A (en) | 1984-01-02 |
SE438577B (en) | 1985-04-22 |
BE880727A (en) | 1980-04-16 |
GB2049282B (en) | 1983-05-18 |
CH659152A5 (en) | 1986-12-31 |
IT7928205A0 (en) | 1979-12-19 |
NL7920185A (en) | 1980-10-31 |
AU529486B2 (en) | 1983-06-09 |
IE792473L (en) | 1980-06-20 |
IL58973A (en) | 1982-07-30 |
ES487065A1 (en) | 1980-09-16 |
DD147898A5 (en) | 1981-04-22 |
IE48719B1 (en) | 1985-05-01 |
CA1131800A (en) | 1982-09-14 |
IL58973A0 (en) | 1980-03-31 |
SE8005746L (en) | 1980-08-14 |
FR2445028A1 (en) | 1980-07-18 |
AU5386879A (en) | 1980-06-26 |
WO1980001338A1 (en) | 1980-06-26 |
FR2445028B1 (en) | 1985-10-11 |
KR830000497B1 (en) | 1983-03-10 |
PL220496A1 (en) | 1980-09-08 |
HU181028B (en) | 1983-05-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |