GB2041983A - Metallising semiconductor devices - Google Patents

Metallising semiconductor devices Download PDF

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Publication number
GB2041983A
GB2041983A GB7843914A GB7843914A GB2041983A GB 2041983 A GB2041983 A GB 2041983A GB 7843914 A GB7843914 A GB 7843914A GB 7843914 A GB7843914 A GB 7843914A GB 2041983 A GB2041983 A GB 2041983A
Authority
GB
United Kingdom
Prior art keywords
aluminium
alkyl
silane
vapour
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7843914A
Other versions
GB2041983B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB7843914A priority Critical patent/GB2041983B/en
Priority to DE19792944500 priority patent/DE2944500A1/en
Priority to GB7938793A priority patent/GB2038883B/en
Priority to IT27119/79A priority patent/IT1193328B/en
Priority to FR7927649A priority patent/FR2441271A1/en
Priority to JP14455379A priority patent/JPS5567135A/en
Publication of GB2041983A publication Critical patent/GB2041983A/en
Priority to US06/199,799 priority patent/US4328261A/en
Application granted granted Critical
Publication of GB2041983B publication Critical patent/GB2041983B/en
Expired legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers

Abstract

Silicon semiconductor devices, e.g. integrated circuits, are metallised with a silicon/aluminium alloy by exposure to a mixture of silane and a aluminium alkyl vapour at an elevated temperature and a reduced pressure. Wafers 11 to be metallised are mounted on a carrier 12 and placed in a vacuum chamber 13 where they are exposed at a reduced pressure to an atmosphere of silane and tri-isobutyl aluminium at a temperature between 250 and 500 DEG C. Thermal decomposition of the two gases produces an alloy coating on each wafer 11. The device may be cleaned with HCI vapour prior to deposition. <IMAGE>

Description

SPECIFICATION Metallizing semiconductor devices This invention relates to metallization of semiconductor devices and in particular to a method of and an apparatus for the deposition of aluminium on silicon devices included integrated circuits.
Conventional metallization processes for integrated semiconductor circuit manufacture require expensive high vacuum equipment in which evaporated or sputtered electrically conductive material, usually aluminium, is transported along a straight trajectory from a localised source. This "line of sight" technique has the disadvantage of a limited process wafer throughput in that the wafers have to be distributed usually by loading them in to an array of dishes carried on a planetary motion mechanism. During a deposition run the front surface of each wafer "sees" the vapour source and is coated with the conductive material.
Another disadvantage of the "line of sight" coating process is the inadequate coating, due to shadowing effects, of steps and irregularities in the process wafers. Furthermore, the high energy required in conventional vacuum processing for rapid atomisation of the conductive material by electron beam evaporation and sputtering techniques produces considerable interface damage to metal-oxide-silicon (MOS) devices. This damage must subsequently be annealed out by heating the devices to a relatively high temperature, e.g.
470 C. At such temperatures the solubility and diffusion rate of silicon in aluminium are high enough to cause the formation of etch pits in the contact window areas of the devices thus degrading the underlying junctions.
This effect is particularly deleterious in the case of very large scale integration (VLSI) where shallow junctions are employed.
To remedy this situation the semiconductor industry has generally adopted the technique of depositing 1% silicon in aluminium alloys to maintain the metallization saturated with silicon when heated to the annealing temperature. This technique however introduces further problems. For example, due to difficulties in film composition control, films with silicon concentrations far in excess of the solubility limit are deposited. Such films present etching difficulties and, due to the considerable reduction of the solubility of silicon in aluminium with decreasing temperature, p-type silicon is precipitated particularly in the contact window areas. This precipitatd silicon increases the effective Schottky barrier height to n-type material and consequently increases the contact resistance.
The object of the invention is to minimise or to overcome these disadvantages.
Our co-pending application No. 22633/78 (R.A.H. Heinecke-R.C. Stern 22-7) describes a process for providing an aluminium coating on a work piece by the thermal decomposition of tri-isobutyl aluminium (TIBA) supplied in vapour form to a reaction chamber maintained at a temperature in the range 250 -270 C, and in which the TIBA, prior to entry into the reaction chamber, is maintained at a temperature below 90 C.
For certain applications this process requires prior hydrogen plasma treatment of the process wafers.
According to the present invention there is provided a process for metallizing a semiconductor device with a silicon/aluminium alloy coating, including exposing the device to an atmosphere of an aluminium alkyl vapour containing silane at a temperature between 250 and 500 C and at a reduced pressure.
No special pretreatment of the semiconductor device is required. The process consists of a single one step deposition/annealing operation wherein aluminium films, saturated at the deposition temperature with silicon, are deposited from a mixture of an aluminium alkyl and silane at low pressure. The deposition temperature is chosen between 250 and 500 C and preferably between 300 and 400 C, to provide optimum annealing and alloying characteristics of the particular semiconductor device being treated. The hydrogen liberated in the decomposition of the aluminium alkyl and silane enhances the annealing efficiency of the process.
The temperatures employed are comparable with subsequent processing to provide scratch protection layers and chip mounting. The process provides silicon/aluminium alloys which are saturated with silicon at such temperatures and which are thus not degraded by such subsequent processing.
An embodiment of the invention will now be described with reference to the accompanying drawings in which the single figure is a schematic diagram of a semiconductor metallization plant.
Referring to the drawing, silicon process wafers 11 to be metallized are disposed on an inert, e.g. silica, boat or carrier 12 and placed in a furnace chamber 13 sealed by a door 14 and gasket 15. The furnace 13 is evacuated via a side entry tube 16, heated to the required deposition temperature and purged with an inert gas, e.g. argon, supplied via a valve 17 and flowmeter 18 from a gas supply manifold 19 feeding a tube 20 communicating with the furnace 13. After purging the gas supply is turned off and the furnace is again evacuated. The process wafers 11 may in some applications be cleaned by admitting e.g. hydrogen chloride vapour via the manifold 19 into the furnace 13 following which the furnace is again evacuated, although in many cases this cleaning step may be omitted.
Deposition of a silicon/aluminium alloy on the wafers is effected by admitting an alumin ium alkyl vapour for example TIBA, or mixtures of aluminium alkyls, from a temperature controlled reservoir 21 containing the liquid alkyls via a valve 22 into the furnace 13 and simultaneously admitting silane via the mani fold 19 into the furnace 13. The alloy depos its spontaneously on the process wafers 11 by a a thermal decomposition process. The process of incorporation of silicon in the deposited alloy film appears to be self limiting according to the solubility limit of the silicon in alumin ium at the deposition temperature.Thus the concentration of silane is not critical although, of course, if the silane concentration is far in excess of that required to saturate the alumin ium the film deposition rate is drastically reduced and poor quality films are obtained.
When the deposition is complete the silane and aluminium alkyl supplies are switched off, and the furnace is brought up to atmospheric pressure with the inert purge gas. The coated process wafers are then ready for patterning and no further annealing or alloying is re quires.
Various alkyls may be employed in the process. Thus, for example, tri-methyl, tri ethyl, tri-isoproyl aluminium, tri-isobytyl alu minium (TIBA) and di-isobutyl aluminium hy dride (DIBAH) or mixtures thereof may be employed. For high quality films TIBA, DIBAH or mixtures thereof should be employed. The temperature at which the alkyl reservoir is maintained is dependent on the evaporation rate of the alkyl or mixture of alkyls. Further, the alkyl/silane mixture may in some applica tions be diluted e.g. with argon and/or hydro gen, the latter enhancing the annealing effici ency of the process.
A typical process sequence for metallizing .silicon process wafers using the apparatus shown in the accompanying drawings is as follows: 1. Load process wafers 11 on to carrier 12 and insert into heated furnace 13.
2. Evacuate furnace to below 0.01 torr.
3. Optionally clean process wafers 11 with e.g. hydrogen chloride and re-evacuate.
(Generally this step will be omitted).
4. Effect deposition by supplying silane and aluminium alkyl to furnace 13.
5. Finish deposition and re-evacuate fur nace.
6. Bring furnace up to atmospheric pressure with argon.
7. Unload treated wafers.
In such a deposition process in which the furnace was maintained at 350 C and deposition was effected from silane and TIBA both supplied at a rate of 200 ml/min. (NPT) at a pressure of 4 torr it was found that a 4 minute deposition period produced an alloy film 1 micron in thickness.
In a modification of the process described herein, an inert gas, e.g. argon or nitrogen is admitted via reservoir 24 and valve 23 into the furnace 13 at regular intervals during the deposition process. The pressure in the furnace 13 is temporarily raised above the vapour pressure of TIBA or TlBA/DlBAH mixture contained in the evaporator thus temporarily resisting the alkyl supply. This permits periodic removal of the reaction products from the furnace 13, which are swept away together with inert gas into the pump. In further embodiments of the invention the aluminium alkyl or mixture of alkyl may be injected into the furnace'13 via an atomising device. Alternatively the liquid alkyl or mixture of alkyl may be admitted via a metering device to a flash evaporation or a continuous evaporation arrangement.
The term semiconductor device as employed herein is understood to refer both to discrete devices and integrated circuits.

Claims (14)

1. A process for metallizing one or more semiconductor devices with a silicon/aluminium alloy coating, including exposing the device to an atmosphere of an aluminium alkyl vapour containing silane at a temperature between 250 and 500 C and at a reduced pressure.
2. A process as claimed in claim 1 and wherein the allow coating is deposited on the semiconductor device at a temperature within the range 300 to 400 C.
3. A process as claimed in claim 1 or 2, and in which the aluminium alkyl comprises tri-isobutyl aluminium, di-isobutyl aluminium hydride or mixtures thereof.
4. A process as claimed in claim 1, 2 or 3, and in which the aluminium alkyl/silane vapour mixture is diluted with an inert gas.
5. A process as claimed in any one of claims 1 to 4, and wherein an inert gas is periodically supplied to the region surrounding the device or devices so as to disperse the vapour phase reaction products, the gas pressure exceeding the vapour pressure of alkyl.
6. A process as claimed in any one of claims 1 to 5, and in which the aluminium alkyl vapour is provided by evaporation from a quantity of the liquid alkyl.
7. A process as claimed in any one of claims 1 to 6, and in which the aluminium alkyl/silane mixture includes hydrogen.
8. A process as claimed in any one of claims 1 to 7, and in which the silicon device is cleaned by exposure to an active vapour prior to metallization.
9. A process as claimed in any one of claims 1 to 8, and wherein the aluminium alkyl is dispersed from an evaporator.
10. A process as claimed in any one of claims 1 to 8, and wherein the aluminium alkyl is dispersed in liquid form from an atomising device.
11. A process for metallizing a silicon semiconductor device with a silicon/aluminium alloy, the method including exposing the device at a temperature of 350 C and a pressure of 4 torr to a mixture of silane and tri-isobutyl aluminium (TIBA), the silane and TIBA being admitted to the atmosphere surrounding the device at substantially equal flow rates.
12. A process for metallizing a semiconductor device substantially as described herein with reference to the accompanying drawing.
13. A semiconductor device when metallized by a process as claimed in any one of the claims 1 to 12.
14. An apparatus for semiconductor device metallization substantially as described herein with reference to the accompanying drawing.
GB7843914A 1978-11-09 1978-11-09 Metallising semiconductor devices Expired GB2041983B (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB7843914A GB2041983B (en) 1978-11-09 1978-11-09 Metallising semiconductor devices
DE19792944500 DE2944500A1 (en) 1978-11-09 1979-11-03 METHOD FOR METALIZING SEMICONDUCTOR COMPONENTS
GB7938793A GB2038883B (en) 1978-11-09 1979-11-08 Metallizing semiconductor devices
IT27119/79A IT1193328B (en) 1978-11-09 1979-11-08 PROCESS AND RELATED APPARATUS FOR THE METALLIZATION OF SEMICONDUCTIVE DEVICES
FR7927649A FR2441271A1 (en) 1978-11-09 1979-11-09 METHOD OF METALLIZING SEMICONDUCTOR DEVICES
JP14455379A JPS5567135A (en) 1978-11-09 1979-11-09 Method of forming metallic film of semiconductor device
US06/199,799 US4328261A (en) 1978-11-09 1980-10-23 Metallizing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7843914A GB2041983B (en) 1978-11-09 1978-11-09 Metallising semiconductor devices

Publications (2)

Publication Number Publication Date
GB2041983A true GB2041983A (en) 1980-09-17
GB2041983B GB2041983B (en) 1982-12-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
GB7843914A Expired GB2041983B (en) 1978-11-09 1978-11-09 Metallising semiconductor devices

Country Status (5)

Country Link
JP (1) JPS5567135A (en)
DE (1) DE2944500A1 (en)
FR (1) FR2441271A1 (en)
GB (1) GB2041983B (en)
IT (1) IT1193328B (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0064805A2 (en) * 1981-03-23 1982-11-17 Fujitsu Limited Method of producing a metallic thin film on a semiconductor body
EP0068738A1 (en) * 1981-06-18 1983-01-05 Itt Industries, Inc. Metallisation plant
US4716050A (en) * 1985-05-03 1987-12-29 American Telephone And Telegraph Company, At&T Bell Laboratories Chemical vapor deposition of aluminum on an activated surface
GB2193228A (en) * 1986-06-20 1988-02-03 Raytheon Co Low temperature metalorganic chemical vapor deposition growth of group ii-vi semiconductor materials
EP0256557A2 (en) * 1986-08-19 1988-02-24 Fujitsu Limited Semiconductor device having thin film wiring layer and method of forming thin wiring layer
GB2213836A (en) * 1987-12-18 1989-08-23 Gen Electric Co Plc Vacuum deposition process
EP0498580A1 (en) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Method for depositing a metal film containing aluminium by use of alkylaluminium halide

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3040693A1 (en) * 1979-11-08 1981-05-27 Deutsche Itt Industries Gmbh, 7800 Freiburg METHOD FOR METALIZING SEMICONDUCTOR COMPONENTS
JPS61245523A (en) * 1985-04-23 1986-10-31 Fujitsu Ltd Method for growth of aluminum film
JPS6324070A (en) * 1987-04-24 1988-02-01 Semiconductor Energy Lab Co Ltd Production of aluminum film
JPH01198475A (en) * 1988-02-02 1989-08-10 Anelva Corp Formation of thin film
JP2544185B2 (en) * 1988-08-09 1996-10-16 アネルバ株式会社 Thin film forming apparatus and method
JP2781220B2 (en) * 1989-09-09 1998-07-30 キヤノン株式会社 Deposition film formation method
JP2781219B2 (en) * 1989-09-09 1998-07-30 キヤノン株式会社 Deposition film formation method
JP2801285B2 (en) * 1989-09-26 1998-09-21 キヤノン株式会社 Deposition film formation method
JP2721020B2 (en) * 1989-09-26 1998-03-04 キヤノン株式会社 Deposition film formation method
JP2721023B2 (en) * 1989-09-26 1998-03-04 キヤノン株式会社 Deposition film formation method
JP2721021B2 (en) * 1989-09-26 1998-03-04 キヤノン株式会社 Deposition film formation method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1122171B (en) * 1955-11-10 1962-01-18 Robert Mueller Process for the production of electrical capacitors, which consist of an insulation material with thin aluminum layers adhering to it
GB1070396A (en) * 1964-08-05 1967-06-01 Union Carbide Corp Linde Divis Method of depositing metal coatings in holes, tubes, cracks, fissures and the like
US3449150A (en) * 1965-03-31 1969-06-10 Continental Oil Co Coating surfaces with aluminum
US3620837A (en) * 1968-09-16 1971-11-16 Ibm Reliability of aluminum and aluminum alloy lands
DE2151052A1 (en) * 1970-10-14 1972-06-08 Motorola Inc Aluminium silicide contacts - deposited on silicon substrates using vapour phase mixture of aluminium and silicon
US3974003A (en) * 1975-08-25 1976-08-10 Ibm Chemical vapor deposition of dielectric films containing Al, N, and Si

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0064805A2 (en) * 1981-03-23 1982-11-17 Fujitsu Limited Method of producing a metallic thin film on a semiconductor body
EP0064805A3 (en) * 1981-03-23 1984-10-10 Fujitsu Limited Method of producing a metallic thin film on a semiconductor body
EP0068738A1 (en) * 1981-06-18 1983-01-05 Itt Industries, Inc. Metallisation plant
US4716050A (en) * 1985-05-03 1987-12-29 American Telephone And Telegraph Company, At&T Bell Laboratories Chemical vapor deposition of aluminum on an activated surface
GB2193228A (en) * 1986-06-20 1988-02-03 Raytheon Co Low temperature metalorganic chemical vapor deposition growth of group ii-vi semiconductor materials
GB2193228B (en) * 1986-06-20 1991-02-20 Raytheon Co Low temperature metalorganic chemical vapor deposition growth of group ii-vi semiconductor materials
EP0256557A3 (en) * 1986-08-19 1989-02-01 Fujitsu Limited Semiconductor device having thin film wiring layer and method of forming thin wiring layer
EP0256557A2 (en) * 1986-08-19 1988-02-24 Fujitsu Limited Semiconductor device having thin film wiring layer and method of forming thin wiring layer
GB2213836A (en) * 1987-12-18 1989-08-23 Gen Electric Co Plc Vacuum deposition process
US5063086A (en) * 1987-12-18 1991-11-05 The General Electric Company P.L.C. Vacuum deposition process and apparatus for producing films having high uniformity
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
EP0498580A1 (en) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Method for depositing a metal film containing aluminium by use of alkylaluminium halide
US5492734A (en) * 1991-02-04 1996-02-20 Canon Kabushiki Kaisha Method of forming deposition film

Also Published As

Publication number Publication date
FR2441271B1 (en) 1983-06-17
IT7927119A0 (en) 1979-11-08
DE2944500A1 (en) 1980-05-29
GB2041983B (en) 1982-12-01
FR2441271A1 (en) 1980-06-06
JPS5567135A (en) 1980-05-21
IT1193328B (en) 1988-06-15

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19941109