GB2019644B - Producing epitaxial layers - Google Patents
Producing epitaxial layersInfo
- Publication number
- GB2019644B GB2019644B GB7913398A GB7913398A GB2019644B GB 2019644 B GB2019644 B GB 2019644B GB 7913398 A GB7913398 A GB 7913398A GB 7913398 A GB7913398 A GB 7913398A GB 2019644 B GB2019644 B GB 2019644B
- Authority
- GB
- United Kingdom
- Prior art keywords
- epitaxial layers
- producing epitaxial
- producing
- layers
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE7804268,A NL187414C (en) | 1978-04-21 | 1978-04-21 | METHOD FOR APPLYING AN EPITAXIAL LAYER |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2019644A GB2019644A (en) | 1979-10-31 |
GB2019644B true GB2019644B (en) | 1982-09-29 |
Family
ID=19830695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7913398A Expired GB2019644B (en) | 1978-04-21 | 1979-04-18 | Producing epitaxial layers |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS54141560A (en) |
AU (1) | AU523988B2 (en) |
CA (1) | CA1134059A (en) |
DE (1) | DE2915883C2 (en) |
FR (1) | FR2423865A1 (en) |
GB (1) | GB2019644B (en) |
IT (1) | IT1112317B (en) |
NL (1) | NL187414C (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0671770B1 (en) * | 1993-02-09 | 2000-08-02 | GENERAL SEMICONDUCTOR, Inc. | Multilayer epitaxy for a silicon diode |
JP6477210B2 (en) * | 2015-04-30 | 2019-03-06 | 株式会社Sumco | Method of manufacturing epitaxial silicon wafer |
JP6358472B2 (en) * | 2015-06-08 | 2018-07-18 | 信越半導体株式会社 | Epitaxial wafer manufacturing method |
JP6447960B2 (en) * | 2016-04-01 | 2019-01-09 | 信越半導体株式会社 | Manufacturing method of silicon epitaxial wafer |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL288409A (en) * | 1962-02-02 | |||
DE2547692C3 (en) * | 1975-10-24 | 1979-10-31 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Method for manufacturing a semiconductor device |
-
1978
- 1978-04-21 NL NLAANVRAGE7804268,A patent/NL187414C/en not_active IP Right Cessation
-
1979
- 1979-04-12 CA CA325,479A patent/CA1134059A/en not_active Expired
- 1979-04-12 AU AU46046/79A patent/AU523988B2/en not_active Ceased
- 1979-04-18 JP JP4850279A patent/JPS54141560A/en active Granted
- 1979-04-18 IT IT21949/79A patent/IT1112317B/en active
- 1979-04-18 GB GB7913398A patent/GB2019644B/en not_active Expired
- 1979-04-19 DE DE2915883A patent/DE2915883C2/en not_active Expired
- 1979-04-20 FR FR7910090A patent/FR2423865A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS54141560A (en) | 1979-11-02 |
FR2423865A1 (en) | 1979-11-16 |
NL187414C (en) | 1991-09-16 |
CA1134059A (en) | 1982-10-19 |
NL7804268A (en) | 1979-10-23 |
AU523988B2 (en) | 1982-08-26 |
JPS5538819B2 (en) | 1980-10-07 |
IT1112317B (en) | 1986-01-13 |
AU4604679A (en) | 1979-10-25 |
GB2019644A (en) | 1979-10-31 |
IT7921949A0 (en) | 1979-04-18 |
DE2915883A1 (en) | 1979-10-31 |
DE2915883C2 (en) | 1987-01-22 |
NL187414B (en) | 1991-04-16 |
FR2423865B1 (en) | 1984-07-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19930418 |