GB201603411D0 - Memory unit - Google Patents
Memory unitInfo
- Publication number
- GB201603411D0 GB201603411D0 GBGB1603411.8A GB201603411A GB201603411D0 GB 201603411 D0 GB201603411 D0 GB 201603411D0 GB 201603411 A GB201603411 A GB 201603411A GB 201603411 D0 GB201603411 D0 GB 201603411D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- memory unit
- memory
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB1603411.8A GB201603411D0 (en) | 2016-02-26 | 2016-02-26 | Memory unit |
PCT/GB2017/050475 WO2017144887A1 (en) | 2016-02-26 | 2017-02-23 | Sram memory unit |
TW106106423A TW201737255A (en) | 2016-02-26 | 2017-02-24 | Memory unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB1603411.8A GB201603411D0 (en) | 2016-02-26 | 2016-02-26 | Memory unit |
Publications (1)
Publication Number | Publication Date |
---|---|
GB201603411D0 true GB201603411D0 (en) | 2016-04-13 |
Family
ID=55807010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB1603411.8A Ceased GB201603411D0 (en) | 2016-02-26 | 2016-02-26 | Memory unit |
Country Status (3)
Country | Link |
---|---|
GB (1) | GB201603411D0 (en) |
TW (1) | TW201737255A (en) |
WO (1) | WO2017144887A1 (en) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5100035B2 (en) * | 2005-08-02 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | Semiconductor memory device |
US8339838B2 (en) * | 2011-01-31 | 2012-12-25 | Freescale Semiconductor, Inc. | In-line register file bitcell |
US9542992B2 (en) * | 2013-04-18 | 2017-01-10 | Nvidia Corporation | SRAM core cell design with write assist |
US8971096B2 (en) * | 2013-07-29 | 2015-03-03 | Qualcomm Incorporated | Wide range multiport bitcell |
US9263122B2 (en) * | 2013-10-21 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company Ltd. | Data-controlled auxiliary branches for SRAM cell |
-
2016
- 2016-02-26 GB GBGB1603411.8A patent/GB201603411D0/en not_active Ceased
-
2017
- 2017-02-23 WO PCT/GB2017/050475 patent/WO2017144887A1/en active Application Filing
- 2017-02-24 TW TW106106423A patent/TW201737255A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2017144887A1 (en) | 2017-08-31 |
TW201737255A (en) | 2017-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ZA201807662B (en) | Aquaponic unit | |
GB201718125D0 (en) | Object memory management unit | |
GB2525904B (en) | Memory unit | |
IL265507B (en) | Breastshield unit | |
GB2536200B (en) | Memory management | |
SG11202006092XA (en) | Memory device | |
GB201603590D0 (en) | Memory unit | |
GB2565499B (en) | Memory unit | |
GB2536880B (en) | Memory management | |
GB201510596D0 (en) | Memory watch unit | |
GB2546245B (en) | Cache memory | |
GB201620954D0 (en) | Memory management | |
GB2537960B (en) | Memory management | |
IL267292B1 (en) | Non-volatile memory | |
EP3675696C0 (en) | Deep-fryer unit | |
IL258594B (en) | Memory access instructions | |
GB2565257B (en) | A memory unit | |
SG11201803277XA (en) | Electroentropic memory device | |
GB201702268D0 (en) | No details available | |
TWI562160B (en) | Memory circuit | |
GB2529298B (en) | Memory address translation | |
TWI563670B (en) | Non-volatile memory | |
GB201603589D0 (en) | Memory unit | |
GB2543528B (en) | Memory circuit | |
GB2536199B (en) | Memory management |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AT | Applications terminated before publication under section 16(1) |