GB2010335A - Improvements Relating to Vacuum Deposition Chamber - Google Patents

Improvements Relating to Vacuum Deposition Chamber

Info

Publication number
GB2010335A
GB2010335A GB7845856A GB7845856A GB2010335A GB 2010335 A GB2010335 A GB 2010335A GB 7845856 A GB7845856 A GB 7845856A GB 7845856 A GB7845856 A GB 7845856A GB 2010335 A GB2010335 A GB 2010335A
Authority
GB
United Kingdom
Prior art keywords
columns
vacuum chamber
wafers
vacuum deposition
deposition chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB7845856A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB7845856A priority Critical patent/GB2010335A/en
Publication of GB2010335A publication Critical patent/GB2010335A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A movable support for work pieces such as silicon wafers includes a circular metal table with a series of upstanding cylindrical support columns 12. Each column 12, has a diameter somewhat smaller than the designed diameter of each wafer 13 to be supported by the columns 12. The table 10 is mounted on a rotary shaft 14, which passes through a rotary air tight seal 15 in the bottom of a vacuum chamber. The wafers 13 overhang the edges of the columns 12 and so prevent deposition of vapour in the vacuum chamber occurring on the support surfaces of the columns 12. The vacuum chamber is attached to a vacuum lock through which wafers 13 can be introduced on to the table 10. <IMAGE>
GB7845856A 1977-11-29 1978-11-23 Improvements Relating to Vacuum Deposition Chamber Withdrawn GB2010335A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7845856A GB2010335A (en) 1977-11-29 1978-11-23 Improvements Relating to Vacuum Deposition Chamber

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4951277 1977-11-29
GB7845856A GB2010335A (en) 1977-11-29 1978-11-23 Improvements Relating to Vacuum Deposition Chamber

Publications (1)

Publication Number Publication Date
GB2010335A true GB2010335A (en) 1979-06-27

Family

ID=26266501

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7845856A Withdrawn GB2010335A (en) 1977-11-29 1978-11-23 Improvements Relating to Vacuum Deposition Chamber

Country Status (1)

Country Link
GB (1) GB2010335A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0335267A2 (en) * 1988-03-30 1989-10-04 Rohm Co., Ltd. Molecular beam epitaxy apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0335267A2 (en) * 1988-03-30 1989-10-04 Rohm Co., Ltd. Molecular beam epitaxy apparatus
EP0335267A3 (en) * 1988-03-30 1990-10-31 Rohm Co., Ltd. Molecular beam epitaxy apparatus

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)
746 Register noted 'licences of right' (sect. 46/1977)