GB201007665D0 - Device analysis - Google Patents

Device analysis

Info

Publication number
GB201007665D0
GB201007665D0 GBGB1007665.1A GB201007665A GB201007665D0 GB 201007665 D0 GB201007665 D0 GB 201007665D0 GB 201007665 A GB201007665 A GB 201007665A GB 201007665 D0 GB201007665 D0 GB 201007665D0
Authority
GB
United Kingdom
Prior art keywords
device analysis
analysis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB1007665.1A
Other versions
GB2480104A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plastic Logic Ltd
Original Assignee
Plastic Logic Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plastic Logic Ltd filed Critical Plastic Logic Ltd
Priority to GB1007665A priority Critical patent/GB2480104A/en
Publication of GB201007665D0 publication Critical patent/GB201007665D0/en
Priority to PCT/EP2011/057354 priority patent/WO2011138451A1/en
Priority to RU2012150160/28A priority patent/RU2570093C2/en
Priority to US13/696,157 priority patent/US20130110421A1/en
Priority to EP11721012A priority patent/EP2558835A1/en
Publication of GB2480104A publication Critical patent/GB2480104A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/30Staining; Impregnating ; Fixation; Dehydration; Multistep processes for preparing samples of tissue, cell or nucleic acid material and the like for analysis
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/201Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials by measuring small-angle scattering
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302Contactless testing
    • G01R31/305Contactless testing using electron beams
    • G01R31/307Contactless testing using electron beams of integrated circuits
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F15/00Digital computers in general; Data processing equipment in general
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3174Etching microareas
    • H01J2237/31745Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/31749Focused ion beam
GB1007665A 2010-05-07 2010-05-07 Device analysis Withdrawn GB2480104A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB1007665A GB2480104A (en) 2010-05-07 2010-05-07 Device analysis
PCT/EP2011/057354 WO2011138451A1 (en) 2010-05-07 2011-05-06 Device analysis
RU2012150160/28A RU2570093C2 (en) 2010-05-07 2011-05-06 Method of device analysis
US13/696,157 US20130110421A1 (en) 2010-05-07 2011-05-06 Device analysis
EP11721012A EP2558835A1 (en) 2010-05-07 2011-05-06 Device analysis

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1007665A GB2480104A (en) 2010-05-07 2010-05-07 Device analysis

Publications (2)

Publication Number Publication Date
GB201007665D0 true GB201007665D0 (en) 2010-06-23
GB2480104A GB2480104A (en) 2011-11-09

Family

ID=42314987

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1007665A Withdrawn GB2480104A (en) 2010-05-07 2010-05-07 Device analysis

Country Status (5)

Country Link
US (1) US20130110421A1 (en)
EP (1) EP2558835A1 (en)
GB (1) GB2480104A (en)
RU (1) RU2570093C2 (en)
WO (1) WO2011138451A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6641745B2 (en) * 2014-07-08 2020-02-05 宇部興産株式会社 Phase structure analysis method, polymer material, polymer material manufacturing method
EP3336918B1 (en) 2016-12-13 2020-09-02 Novaled GmbH Flash light illumination method and organic electronic device elements obtainable this way
CN107727663A (en) * 2017-11-17 2018-02-23 广东金鉴检测科技有限公司 It is a kind of that the method for carrying out failure detection is characterized to LED chip

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970007379A (en) * 1995-07-19 1997-02-21 김주용 Defect die inspection method of wafer with pattern layer
SG54130A1 (en) * 1996-02-15 1998-11-16 Inst Of Microelectronics Staining technique for semiconductor device for sem exposure
US6162735A (en) * 1999-03-26 2000-12-19 Infineon Technologies North America Corp. In-situ method for preparing and highlighting of defects for failure analysis
US6379870B1 (en) * 2000-07-12 2002-04-30 Honeywell International Inc. Method for determining side wall oxidation of low-k materials
EP1209737B2 (en) * 2000-11-06 2014-04-30 Hitachi, Ltd. Method for specimen fabrication
US6506615B2 (en) * 2001-05-04 2003-01-14 Mosel Vitelic, Inc. Method for measuring the depth of well
US7244669B2 (en) * 2001-05-23 2007-07-17 Plastic Logic Limited Patterning of devices
US7112288B2 (en) * 2002-08-13 2006-09-26 Texas Instruments Incorporated Methods for inspection sample preparation
US6958476B2 (en) * 2003-10-10 2005-10-25 Asml Netherlands B.V. Methods to improve resolution of cross sectioned features created using an ion beam
US7094616B2 (en) * 2004-03-04 2006-08-22 International Business Machines Corporation High resolution cross-sectioning of polysilicon features with a dual beam tool
US7262409B2 (en) * 2005-01-04 2007-08-28 Texas Instruments Incorporated Chemical etch solution and technique for imaging a device's shallow junction profile
US7355173B2 (en) * 2005-01-06 2008-04-08 Systems On Silicon Manufacturing Co., Pte. Ltd. Delineation of wafers
US7791055B2 (en) * 2006-07-10 2010-09-07 Micron Technology, Inc. Electron induced chemical etching/deposition for enhanced detection of surface defects
CN101625302B (en) * 2008-07-08 2011-05-11 中芯国际集成电路制造(上海)有限公司 Method for preparing transmission electron microscope sample
TWI368963B (en) * 2008-07-18 2012-07-21 Inotera Memories Inc An analysis method of wafer's ion implant

Also Published As

Publication number Publication date
US20130110421A1 (en) 2013-05-02
GB2480104A (en) 2011-11-09
RU2570093C2 (en) 2015-12-10
RU2012150160A (en) 2014-06-20
EP2558835A1 (en) 2013-02-20
WO2011138451A1 (en) 2011-11-10

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Legal Events

Date Code Title Description
S30Z Assignments for licence or security reasons

Free format text: APPLICANT STATE CORPORATION: RUSSIAN CORPORATION OF NANOTECHNOLOGIES

WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)