GB2005470A - Improvements in or relating to dynamic semiconductor storage elements - Google Patents
Improvements in or relating to dynamic semiconductor storage elementsInfo
- Publication number
- GB2005470A GB2005470A GB7837082A GB7837082A GB2005470A GB 2005470 A GB2005470 A GB 2005470A GB 7837082 A GB7837082 A GB 7837082A GB 7837082 A GB7837082 A GB 7837082A GB 2005470 A GB2005470 A GB 2005470A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor layer
- storage
- storage elements
- relating
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000003990 capacitor Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Abstract
A dynamic semiconductor storage element comprises an MOS-storage capacitor (1,3,4) arranged on a semiconductor layer (4) of one conductivity type. This capacitor is fed with the charge to be stored via a bit line (5) constituted by a strip-shaped buried layer of the opposite conductivity type. A portion of the word line (1) forms a conductor path which is arranged above and insulated from the semiconductor layer (4) and serves as the outer electrode of the storage capacitor. In storage elements of this type, the drive voltage range on the word line is kept low by increasing the doping of the semiconductor layer (4) from its surface with the insulating layer (3) to a depth of a few 100 nm. The invention is particularly suitable for highly integrated storage components. <IMAGE>
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772743948 DE2743948A1 (en) | 1977-09-29 | 1977-09-29 | DYNAMIC SEMICONDUCTOR STORAGE ELEMENT |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2005470A true GB2005470A (en) | 1979-04-19 |
GB2005470B GB2005470B (en) | 1982-05-26 |
Family
ID=6020261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7837082A Expired GB2005470B (en) | 1977-09-29 | 1978-09-15 | Dynamic semiconductor storage elements |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5458384A (en) |
BE (1) | BE870894A (en) |
DE (1) | DE2743948A1 (en) |
FR (1) | FR2404891A1 (en) |
GB (1) | GB2005470B (en) |
IT (1) | IT1098965B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0160951B2 (en) * | 1978-01-03 | 1989-12-26 | Advanced Micro Devices Inc | |
JPH04348068A (en) * | 1991-03-18 | 1992-12-03 | Toshiba Corp | Semiconductor memory device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3685739A (en) * | 1970-08-07 | 1972-08-22 | Afa Corp | Liquid dispensing apparatus |
JPS472778U (en) * | 1971-01-27 | 1972-08-31 | ||
JPS4834939U (en) * | 1971-08-26 | 1973-04-26 | ||
JPS5137664Y2 (en) * | 1972-07-04 | 1976-09-14 |
-
1977
- 1977-09-29 DE DE19772743948 patent/DE2743948A1/en not_active Withdrawn
-
1978
- 1978-09-15 FR FR7826540A patent/FR2404891A1/en active Granted
- 1978-09-15 GB GB7837082A patent/GB2005470B/en not_active Expired
- 1978-09-28 JP JP11986678A patent/JPS5458384A/en active Pending
- 1978-09-28 IT IT28175/78A patent/IT1098965B/en active
- 1978-09-29 BE BE190812A patent/BE870894A/en unknown
Also Published As
Publication number | Publication date |
---|---|
JPS5458384A (en) | 1979-05-11 |
BE870894A (en) | 1979-01-15 |
IT1098965B (en) | 1985-09-18 |
DE2743948A1 (en) | 1979-04-12 |
FR2404891A1 (en) | 1979-04-27 |
IT7828175A0 (en) | 1978-09-28 |
FR2404891B1 (en) | 1983-12-02 |
GB2005470B (en) | 1982-05-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |