GB2000631A - Semi-conductor lasers - Google Patents

Semi-conductor lasers

Info

Publication number
GB2000631A
GB2000631A GB7827574A GB7827574A GB2000631A GB 2000631 A GB2000631 A GB 2000631A GB 7827574 A GB7827574 A GB 7827574A GB 7827574 A GB7827574 A GB 7827574A GB 2000631 A GB2000631 A GB 2000631A
Authority
GB
United Kingdom
Prior art keywords
laser
semi
optical
conductor
conductor lasers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7827574A
Other versions
GB2000631B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Post Office
Original Assignee
Post Office
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Post Office filed Critical Post Office
Priority to GB7827574A priority Critical patent/GB2000631B/en
Publication of GB2000631A publication Critical patent/GB2000631A/en
Application granted granted Critical
Publication of GB2000631B publication Critical patent/GB2000631B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Lasers (AREA)

Abstract

A double heterostructure semi-conductor laser has the configuration of its optical cavity arranged to impose a constraint on the lasing filament as the spatial distribution of the lasing filament changes from that occuring at the threshold level so that the optical flux emitted by the laser has self-saturating properties. This protects the laser from catastrophic facet erosion and enables a simpler control circuit to be used to drive this laser when it is used as a light source for an optical communications system.
GB7827574A 1977-07-01 1978-06-22 Improvements relating to semiconductor lasers Expired GB2000631B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7827574A GB2000631B (en) 1977-07-01 1978-06-22 Improvements relating to semiconductor lasers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2766677 1977-07-01
GB7827574A GB2000631B (en) 1977-07-01 1978-06-22 Improvements relating to semiconductor lasers

Publications (2)

Publication Number Publication Date
GB2000631A true GB2000631A (en) 1979-01-10
GB2000631B GB2000631B (en) 1982-01-20

Family

ID=26258936

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7827574A Expired GB2000631B (en) 1977-07-01 1978-06-22 Improvements relating to semiconductor lasers

Country Status (1)

Country Link
GB (1) GB2000631B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2156585A (en) * 1984-03-16 1985-10-09 Hitachi Ltd Light-emitting device electrode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2156585A (en) * 1984-03-16 1985-10-09 Hitachi Ltd Light-emitting device electrode
US4692927A (en) * 1984-03-16 1987-09-08 Hitachi, Ltd. Light emitting device with improved electrode structure to minimize short circuiting

Also Published As

Publication number Publication date
GB2000631B (en) 1982-01-20

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19980621