GB1532146A - Semiconductor junction - Google Patents

Semiconductor junction

Info

Publication number
GB1532146A
GB1532146A GB20469/77A GB2046977A GB1532146A GB 1532146 A GB1532146 A GB 1532146A GB 20469/77 A GB20469/77 A GB 20469/77A GB 2046977 A GB2046977 A GB 2046977A GB 1532146 A GB1532146 A GB 1532146A
Authority
GB
United Kingdom
Prior art keywords
region
layer
regions
semiconductor junction
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20469/77A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
California Linear Circuits Inc
Original Assignee
California Linear Circuits Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Linear Circuits Inc filed Critical California Linear Circuits Inc
Priority to GB20469/77A priority Critical patent/GB1532146A/en
Publication of GB1532146A publication Critical patent/GB1532146A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Bipolar Transistors (AREA)

Abstract

1532146 Semiconductor devices CALIFORNIA LINEAR CIRCUITS Inc 16 May 1977 20469/77 Heading H1K A PN junction, e.g. for a clamping diode, having improved forward and reverse recovery times achieved without degrading the steady state reverse current characteristics is formed between a highly doped P<SP>+</SP> (or N<SP>+</SP>) region 32 and a lightly doped N(P) region 30 by the provision between regions 30, 32 of a thin P(N) layer 34 having a doping level intermediate between those of the regions 30 and 32. The thickness of the layer 34 (preferably 50-200Š) is of the same order as that of the depletion region under forward bias. The layer 34 and the region 32 are preferably formed by ion implantation.
GB20469/77A 1977-05-16 1977-05-16 Semiconductor junction Expired GB1532146A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB20469/77A GB1532146A (en) 1977-05-16 1977-05-16 Semiconductor junction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB20469/77A GB1532146A (en) 1977-05-16 1977-05-16 Semiconductor junction

Publications (1)

Publication Number Publication Date
GB1532146A true GB1532146A (en) 1978-11-15

Family

ID=10146451

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20469/77A Expired GB1532146A (en) 1977-05-16 1977-05-16 Semiconductor junction

Country Status (1)

Country Link
GB (1) GB1532146A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1787318A2 (en) * 2004-08-10 2007-05-23 Wafermasters, Incorporated Method of forming ultra shallow junctions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1787318A2 (en) * 2004-08-10 2007-05-23 Wafermasters, Incorporated Method of forming ultra shallow junctions
EP1787318A4 (en) * 2004-08-10 2008-10-01 Wafermasters Inc Method of forming ultra shallow junctions

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee